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WO2010038593A1 - Dispositif et procédé servant à déposer une pile de polarisation dure, et dispositif et procédé servant à fabriquer une pile de capteurs magnétiques - Google Patents

Dispositif et procédé servant à déposer une pile de polarisation dure, et dispositif et procédé servant à fabriquer une pile de capteurs magnétiques Download PDF

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WO2010038593A1
WO2010038593A1 PCT/JP2009/065790 JP2009065790W WO2010038593A1 WO 2010038593 A1 WO2010038593 A1 WO 2010038593A1 JP 2009065790 W JP2009065790 W JP 2009065790W WO 2010038593 A1 WO2010038593 A1 WO 2010038593A1
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Prior art keywords
hard bias
chamber
target
substrate
layer
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English (en)
Japanese (ja)
Inventor
アインシタイン ノエル アバラ
基将 長井
啓介 上田
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Canon Anelva Corp
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Canon Anelva Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices

Definitions

  • the present invention forms a hard bias laminate for a magnetic sensor laminate, in which a thin film of a magnetic alloy and a nonmagnetic alloy is sputtered in a field region on the side of two opposing joint walls of a magnetoresistive element disposed on a substrate.
  • the present invention relates to an apparatus and a film forming method, and a manufacturing apparatus and a manufacturing method of a magnetic sensor laminate.
  • the MR head includes a magnetoresistive element (MR element) surrounded on two sides by a magnetic layer that applies a bias magnetic field.
  • MR element magnetoresistive element
  • the simplest structure of an MR element includes at least two ferromagnetic layers with an insulator or non-magnetic material separated. One layer is pinned by an antiferromagnetic layer (pinned layer), and the magnetization of the other layer (free layer) rotates freely according to the applied magnetic field. The relative magnetization rotation in these ferromagnetic layers defines the resistance.
  • the magnetic field is generated from hard ferromagnetic films (hard bias films) formed on both sides of the patterned magnetoresistive element.
  • the hard bias laminate including the hard bias film needs to have good coverage around the magnetoresistive element in order to direct the magnetic field to the free layer. Therefore, the hard bias stack must be uniformly formed on a large wafer and have the same thickness on both sides of the magnetoresistive element, in addition to having a high coercive force and appropriate remanent magnetization.
  • FIG. 19 is a schematic diagram showing a general magnetron sputtering apparatus for forming a film on a conventional large wafer.
  • the film forming apparatus 201 mainly includes a vacuum chamber 203 provided with a magnetron / cathode 202 and a holder 205 on which a wafer 204 is placed.
  • the chamber 203 is usually provided with a gas inlet 206 for Ar.
  • the target size is typically very large, corresponding to approximately twice the size of the wafer.
  • Some of these types of chambers can be connected to the collective unit type unit, and the wafer 204 moves between adjacent chambers 203 to form multiple layers.
  • the emission angle distribution of sputtered particles in this design is usually cos n ⁇ , and is not suitable for film formation on a wafer having a patterned structure such as a trench or a columnar photoresist.
  • a sputtering apparatus and a sputtering method for forming a film by magnetron sputtering have been proposed (see Patent Document 1).
  • this apparatus after the inside of the vacuum chamber is brought into a high vacuum state, He gas is introduced from the sputtering gas introduction means, Ar diluted F 2 gas is introduced from the reactive gas introduction means, and DC power is applied.
  • a magnetic field parallel to the sputtering surface and an electric field perpendicular to the sputtering surface are generated on the sputtering surface of the cylindrical target, and a thin film is formed on the substrate by magnetron sputtering.
  • FIG. 20 is a schematic diagram showing the main elements of an IBD apparatus used for multilayer film formation on a wafer having a conventional patterned structure.
  • the film forming apparatus 301 includes an ion beam source 302 having a grid 303 electrically biased to extract an ion beam, a plurality of targets 304 on a rotary holder 307, and a rotatable substrate holder 305. Composed.
  • Process gas is ionized and accelerated by the grid of the ion beam source.
  • the target is irradiated with ions, and particles are sputtered onto the wafer 306.
  • the incident angle of particles reaching the wafer 306 can be changed by rotating the substrate holder 305 along an axis (perpendicular) perpendicular to the incident surface.
  • the general processing pressure is lower than the sputtering method of FIG. Since a plurality of different targets can be placed on the rotating holder, multilayer film formation is possible. Due to the need for an ion beam source 302, a target holder 307, and a substrate holder 305 having various rotational capabilities, ion beam deposition (IBD) apparatuses have become very large.
  • IBD ion beam deposition
  • a typical chamber capacity is 10 times or more that of the conventional sputtering apparatus 201 in which the target and the wafer of FIG. 19 are arranged in parallel.
  • the chamber capacity of the IBD device has become the industry standard for film formation of hard bias stacks for magnetic sensor stacks.
  • an ionized physical vapor deposition apparatus having a multi-cathode on the upper wall of a reaction vessel (chamber)
  • the apparatus comprises a reaction vessel with an upper wall provided with at least two inclined cathodes for a wafer placed on a rotatable wafer holder.
  • RF power is supplied to each cathode, and a gas introduction unit and a gas discharge unit are provided.
  • the internal pressure of the reaction vessel is controlled so as to be a relatively high pressure by a pressure control mechanism. According to this apparatus, a good coverage can be formed on the patterned structure on the wafer surface by using neutral atoms sputtered by each of the inclined multi-cathodes.
  • IBD ion beam deposition
  • the incident angle of sputtered particles on the substrate is not uniform even for wafers of 6 inches or less.
  • it becomes more difficult to obtain uniform coverage on both sides of the magnetoresistive element resulting in a so-called inboard / outboard problem in which the film thickness differs between the center and the edge of the wafer. .
  • the present invention relates to a method for forming a hard bias laminate, which can form a good hard bias laminate having a high coercive force in a field region on the side of two opposing junction walls of a magnetoresistive element using ionized PVD.
  • An object is to provide a film forming apparatus.
  • a base layer having a body-centered cubic structure (bcc) is formed in a field region on the side of two opposing junction walls of a magnetoresistive element arranged on a substrate.
  • the hard bias laminate film forming apparatus of the present invention has a base layer having a body-centered cubic structure (bcc) in a field region on the side of two opposing wall surfaces of a magnetoresistive element disposed on a substrate.
  • a substrate holder that supports a substrate to be processed rotatably around its central axis at the bottom of the processing space, and supports the substrate so as to move up and down stepwise.
  • a plurality of magnetron / cathode units capable of supporting a target on the side, An exhaust system capable of exhausting the interior of the chamber; A gas introduction system for introducing a processing gas into the chamber; A gas pressure adjusting mechanism capable of finely adjusting the gas pressure inside the chamber; A power source for supplying power to the magnetron / cathode unit; A power supply for applying a substrate bias by supplying power to the substrate holder;
  • At least one has a distance adjusting mechanism capable of controlling the distance between the magnetron and the cathode stepwise.
  • the simplest structure of the MR element includes at least two ferromagnetic layers with an insulator therebetween.
  • One layer (pinned layer) is fixed by an antiferromagnetic layer, and the magnetization of the other layer (free layer) is freely rotated according to the applied magnetic field.
  • the relative magnetization rotation between these ferromagnetic layers defines a resistance to current. Since the magnetoresistive element is small, the formation of magnetic domains and domain walls is promoted by static magnetic fields from both ends, and when an external magnetic field is applied, the magnetic domains grow and the domain walls expand.
  • Barkhausen noise is generated.
  • a bias magnetic field is applied, and this magnetic field is usually produced by forming a hard bias stack next to the magnetoresistive element.
  • the free layer is forced to have a single domain structure by the hard bias laminate, and the rotation of magnetization becomes smooth when an external magnetic field is applied.
  • an ion beam deposition (IBD) method is generally used. This irradiates the target with an ion beam, and sputtered particles emitted from the target reach the device substrate with high directivity.
  • the gas pressure can be controlled to somewhat control the direction.
  • the structure of the hard bias laminate is usually composed of an underlayer that is Cr or an alloy thereof, and a magnetic layer such as a CoCrPt alloy or a CoPt alloy that can generate high coercive force and residual magnetization.
  • a high coercive force exceeding 159.16 kA / m (2000 Oe) is required, and a higher bias magnetic field is obtained when the residual magnetization is high.
  • the crystal orientation of the Cr underlayer is usually (110), and (10.0) for the magnetic layer. Although the direction of the C axis of the Co alloy is set at random, in most cases, it exists in parallel to the substrate surface.
  • a magnetoresistive element is first deposited and patterned.
  • TMR current tunneling magnetoresistive
  • the elements are first deposited and then patterned using common lithographic techniques.
  • An insulating layer such as Al 2 O 3 or Si—N is deposited on the junction walls and exposed field regions. Due to the photoresist structure, no film is formed on the element itself. Insulating layers are typically formed on patterned elements by atomic layer deposition (ALD) or chemical vapor deposition (CVD).
  • a hard bias laminate is formed in contact with the vicinity of the bonding wall and the insulating layer.
  • IBD the Cr underlayer and the magnetic layer are formed at different incident angles, and a desired hard bias laminate shape is realized.
  • the target size used in IBD technology tends to be very large in order to obtain sufficient uniformity across the wafer. Optimization is complicated because the deposition rate is low and the angle of incidence (of the magnetic layer) affects important magnetic properties such as coercivity. Changing the angle also affects the shape of the hard bias stack and junction walls at different locations on the wafer, so-called outboard (devices on the wafer that are far from the target) and inboard (near the target). There is a problem with a certain device. For example, H.M. Hedge et al., In US Pat. No. 6,716,322, describe a combined method for improving the shape of such outboard and inboard using a mask.
  • the target must be large.
  • the conventional sputtering method is not used for forming a hard bias laminate because of the surface shape of the wafer. Since the emission angle distribution of sputtered particles is widened, the coverage is reduced.
  • ionized physical vapor deposition is commonly used in the semiconductor industry (see Hopwood, e.g. J, Vac, Sci, Technol, B, Vol. 12, No. 1, January / February 1994 issue).
  • a high-density plasma is generated in the chamber that ionizes the sputtered particles.
  • a high density plasma is typically formed by using an RF induction coil or microwave radiation (ECR).
  • ECR microwave radiation
  • Another method is to apply high frequency power to the target itself. This method is described by Sasaki and Funato (see US Pat. No. 6,444,099) and shown in this document as reference material.
  • Examples of the target include an annular ring type (see US Pat. No. 6,197,165; J. Drewery TEL), a conical type (see US Pat. No. 5,919,345; Tepman), and a partial conical type (see US Pat. No. 6,042,706).
  • IPVD has been used to form pure metals such as Cu and Al in most cases. Alloys such as CuMg are also deposited, and recently phase change alloys such as GeSbTe have been formed. iPVD is also effective when a thin layer of nitride such as TaN or TiN is formed.
  • nitride such as TaN or TiN
  • This method can not be used for all materials, as it usually requires very high power output. Since a large cathode power is required, it is not easy to obtain a relatively thin film with a controlled film thickness. In order to further improve the directionality, a long throw structure is generally used.
  • IPVD is suitable for vapor deposition on a patterned large substrate because it does not cause the inboard / outboard problems of IBD, the industry standard technology.
  • T / S distance the distance between the target and the substrate
  • the target material is sufficiently ionized, it is not necessary to use collimating components that can cause contamination.
  • incident angle control is more difficult than IBD.
  • the angular distribution (incident ion energy and incident angle dependency) of the sputtered particles to the substrate is mainly composed of high-energy normal incident particles and low-energy neutral particles. Normal incidence is achieved by ionized sputtered particles being accelerated by a plasma sheath on the wafer surface.
  • the substrate bias increases the energy of the ionized particles when irradiated onto the wafer.
  • neutral particles are present in a wide angle range due to scattering, and conversely, thermal motion and thus ionization are reduced.
  • the velocity distribution of neutral particles depends on the structure of the target and the substrate that are normally fixed unlike the IBD apparatus.
  • the mean free path is much smaller than the chamber dimensions.
  • Non-ionized particles that are low energy due to collision with the sputtering gas are not directly affected by the sheath electric field.
  • this particle is irradiated to a portion parallel to the substrate surface, an impact is given by the high-energy vertically incident particles and the ionized sputtering gas. Thereby, a high-density compressed film is easily formed.
  • a porous film having a tensile stress is formed on the bonding wall.
  • incident ions are irradiated at an acute angle with respect to the wall, thereby forming a porous film.
  • the film on the joining wall can be denser, but almost vertical (60 degrees or more) walls and combinations (almost perpendicular in the free layer, taper below that) In this case, a porous film is formed. This creates voids and seams at the corners, as is commonly seen in trenching and hole filling in the semiconductor industry. In the case of an interconnect, this seam reduces the final dielectric constant of the plug or line, but this seam is acceptable. However, in the case of a hard bias stack, seam formation is fatal to the device because it prevents a stable magnetic field bias from being applied to the free layer.
  • the hard bias laminate is composed of an underlayer such as Cr, a magnetic layer mainly composed of Co, and a capping layer such as Ta.
  • the magnetic layer needs to have a high coercive force even at high temperatures in order to provide a stable magnetic field bias to the free layer of the magnetoresistive element. Therefore, most commonly added to Co is Pt, and is generally added at a rate exceeding 20 at%.
  • the plasma density can be increased by confining the plasma with a magnetic field. This can be achieved, for example, by increasing the magnetron magnetic field confining the plasma near the target surface.
  • the RF source in order to promote ionization, is irradiated with sputtered particles from a short distance.
  • our research shows that the opposite phenomenon occurs, and the ionization rate decreases as the magnetron magnetic field increases.
  • US Pat. No. 5,750,012 discloses a combined processing gas method in which a low ion mass gas such as Ne is used in combination with a high ion mass gas such as Ar, Kr or Xe.
  • the ratio of the low ion mass to the high ion mass is 1: 1 or more. Even better perpendicularity is obtained with respect to sputtered particles, which is advantageous for targets parallel to the substrate.
  • US Pat. No. 6,200,433 describes a method for improving coverage characteristics at a low gas pressure by using a heavy processing gas such as Kr or Xe for vapor deposition of materials such as Ta, W, TaN and Cu. Yes.
  • a heavy processing gas such as Kr or Xe for vapor deposition of materials such as Ta, W, TaN and Cu.
  • the heavier gas is easily ionized, resulting in an overcosine velocity distribution. For this reason, sputtered particles are directed perpendicular to the target surface rather than Ar or He gas.
  • a stage movable along this axis provides sufficient flexibility.
  • the height of the stage relative to the position of that layer can be raised or lowered. This is better than inserting / excluding spacers to raise and lower the cathode assembly. This is particularly effective for research and development purposes where a quick turnaround time (processing time) is essential, and when making slight adjustments during continuous film formation (production).
  • the magnetoresistive element is etched, surface-stabilized, and the hard bias stack is installed without breaking the vacuum or touching the work material with air.
  • the apparatus can be used to produce a hard bias stack of magnetic sensor stacks.
  • the influence of the seam caused by normal incidence sputtering is minimized, and the non-uniformity of outboard and inboard on a large wafer is small. Therefore, by using an ionized PVD apparatus smaller than the ion beam film forming apparatus (IBD), an excellent hard bias laminate having a high coercive force is formed on the inclined or vertical junction wall surface of the magnetoresistive element having the patterned structure. Can do.
  • IBD ionized PVD apparatus smaller than the ion beam film forming apparatus
  • RIE reactive ion etching
  • IBE ion beam etching
  • FIG. It is explanatory drawing which shows the coverage at the time of using various gas. It is an explanatory view showing a Makuho force (Hc) of the Co-25pt on SiO 2 substrate (25nm) / CrTi (5nm) . It is the schematic which shows the hard bias laminated body formed with the film-forming method of the comparative example. It is the schematic which shows the observation state of embedding
  • FIG. 1 It is a schematic diagram showing a general magnetron sputtering apparatus for forming a film on a conventional large wafer. It is the schematic which shows the main elements of the IBD apparatus used when carrying out multilayer vapor deposition on the wafer provided with the conventional patterning structure. It is a schematic diagram which shows the controller with which the apparatus of FIG. 1 is provided. It is the schematic which shows typically the magnetic sensor laminated body manufactured by this invention. It is the schematic which has arrange
  • FIG. 1 is a schematic view showing a film forming apparatus for a hard bias laminate according to the first embodiment.
  • the film forming apparatus for the hard bias laminate according to the first embodiment is constituted by a single ionized physical vapor deposition apparatus (iPVD apparatus).
  • the iPVD apparatus 1 includes three magnetron / cathode units 31, 32, and 33 for depositing three different target materials in the same chamber (reaction vessel) 10.
  • the iPVD apparatus 1 of the present embodiment includes a chamber 10 that forms a processing space.
  • a main exhaust pump (TMP) 13 such as a turbo molecular pump is connected to the chamber 10 through a main valve 11 such as a gate valve as an exhaust system capable of evacuating the interior to a desired degree of vacuum. .
  • a gas inlet 14 is opened in the chamber 10, and a gas introduction system (not shown) for introducing a processing gas into the chamber 10 is connected to the gas inlet 14.
  • a gas cylinder (not shown) is connected to the gas introduction system via an automatic flow controller (not shown) such as a mass flow controller, and the processing gas is introduced from the gas inlet 14 at a predetermined flow rate.
  • an automatic flow controller such as a mass flow controller
  • a gas containing neon (Ne), argon (Ar), or Ne is used as the processing gas.
  • the exhaust system is provided with a gas pressure adjusting mechanism capable of finely adjusting the gas pressure inside the chamber 10.
  • This gas pressure adjusting mechanism includes a bypass passage (bypass manifold) 16 formed so as to bypass the main exhaust passage 15 that directly communicates with the TMP 13, and a butterfly valve 17 that opens and closes the inside of the bypass manifold 16. ing.
  • the butterfly valve 15 provided in the bypass manifold 16 the gas pressure during deposition can be controlled more accurately. That is, when the processing gas (Ne) is introduced into the chamber 10, the main valve 11 is closed, and the opening of the butterfly valve 17 of the bypass manifold 16 is adjusted to finely adjust the gas pressure.
  • a substrate holder 22 that supports the substrate 21 is provided on the upper surface below the processing space in the chamber 10.
  • the substrate 21 to be processed is usually carried onto the substrate holder 22 through a horizontal slot (not shown) by a handling robot (not shown).
  • the substrate holder 22 is, for example, a disk-shaped mounting table (stage), and supports the substrate 21 on the upper surface thereof by electrostatic adsorption.
  • the substrate holder 22 is connected to a rotation drive mechanism (not shown) and is configured to be rotatable around its central axis.
  • the substrate holder 22 includes a mechanism that can move up and down in stages, such as a cylinder device, for example, and is configured to be adjustable to, for example, three levels.
  • the substrate holder 22 is rotated, and the height position of the substrate holder 22 is controlled to rise to the initial height, the second height, and the third height in three stages.
  • the height position of the substrate holder 22 is an initial height when a first target described later is formed, a second height when a second target is formed, and a third target is formed. When doing so, it is controlled to be the third height. Therefore, the film formation uniformity of most target materials can be controlled by adjusting the height of the substrate holder 22 and rotating the substrate holder 22.
  • the substrate (wafer) 21 for example, a silicon substrate (SiO 2 substrate) is used, but is not limited thereto. In this embodiment, an 8-inch large wafer is assumed in order to improve productivity. However, the present invention is not limited to this, and a wafer of 6 inches or less can also be used.
  • a plurality of magnetron / cathode units are arranged obliquely above the substrate holder 22 in the processing space.
  • three magnetron / cathode units 31, 32, and 33 are provided on the upper wall portion of the chamber 10.
  • the cathode units 31, 32, and 33 are inclined with respect to the processing surface of the substrate 21 on the substrate holder 22 and are offset from the central axis of the substrate 21 at equal intervals in the surface direction.
  • Each cathode unit 31, 32, 33 has a target attached to the surface side of the cathode casing.
  • a magnetron having a magnet assembly in which a plurality of permanent magnets are arranged vertically and horizontally is provided on the back side of the cathode, and a cusp magnetic field is formed on the surface side of the target.
  • a different target material is attached to the cathode surface side of each cathode unit 31, 32, 33.
  • the first to third different targets are attached.
  • the first target for example, a metal having a body-centered cubic structure (bcc) is used.
  • bcc body-centered cubic structure
  • the second target for example, a Co—Pt or Co—Cr—Pt hexagonal crystal structure (hcp) magnetic alloy (wherein the Pt content is at least an atomic weight ratio of 20%) is used.
  • the third target for example, a material selected from Cr, Mo, Nb, Ru, Ta, Ti, V and W, or an alloy system thereof is used.
  • the first target is a Cr alloy
  • the second target is Co—Pt with a Pt content of at least 20%
  • the third target is Ta.
  • the first target is attached to the first cathode unit 31
  • the second target is attached to the second cathode unit 32
  • the third target is attached to the third cathode unit 32.
  • each target has a disk shape, is formed in the same size, and is inclined with respect to the substrate mounting surface of the substrate holder 22 in a range of 10 degrees to 30 degrees.
  • each target is inclined at 10 to 20 degrees with respect to the substrate mounting surface.
  • the deviation of the cathode center in the mounting surface direction with respect to the central axis of the substrate holder 22 is set to be at least 100 mm, and the cathode center is set 50 to 250 mm away from the substrate processing surface along the central axis direction. Can be mentioned.
  • the three cathode units 31, 32, 33 at least one is provided with a distance adjusting mechanism 38 that can control the distance (T / M distance) between the magnetron and the target.
  • this distance adjustment mechanism is provided in the second cathode unit 32 to which the second target is attached, and for example, an automatic controller that moves the plate to which the magnetron is attached along the axial direction of the unit is mounted.
  • the advance / retreat mechanism include a cylinder device, a rack and pinion, and a ball screw.
  • the second cathode unit 32 is provided with the distance adjusting mechanism, but the present invention is not limited to this, and all the cathode units may be provided.
  • the T / M distance is controlled because it is necessary to maintain a relatively low magnetic field on the target surface, particularly when the target material is a magnetic material.
  • the leakage magnetic field greatly increases as the end of life approaches, but this must be avoided in order to maintain a good ionization rate.
  • the distance from the magnetron to the target can be determined in advance by investigating the increase in magnetic field due to the erosion progress of the target or by feedback from the voltage generated by the ions irradiated on the target.
  • the cathode units 31, 32, 33 are electrically connected to a high frequency power source (RF power source) (not shown) that supplies RF power to the cathode.
  • RF power source RF power source
  • the RF power source is common to the three cathode units 31, 32, and 33, and a switching mechanism such as a switch that selectively supplies power to each of the cathode units 31, 32, and 33 (see FIG. Not shown).
  • the first cathode unit 31 is supplied with RF1 power of 0.5 to 3 kW.
  • the second cathode unit 32 is supplied with 1 to 5 kW of RF2 power.
  • the third cathode unit 33 is supplied with 1 to 5 kW of RF3 power.
  • the optimum impedance may differ depending on the height of the holder, gas pressure, or target material, a matching circuit is required separately. Further, the height of the substrate holder 22 varies depending on the target material to be formed and the gas pressure used.
  • the substrate holder 22 is also provided with a high-frequency power source (RF power source) (not shown) that applies the RF bias 23.
  • the substrate bias RF power source has a frequency of 13.56 MHz or 50 to 70 MHz when the frequency of the cathode side RF power source is 60 MHz and the output density is 4 W / cm 2 or more, but is different from the power frequency on the cathode side.
  • An RF bias 23 is applied.
  • the substrate bias is supplied with power less than 50W.
  • a shutter 35 that can open and close the front surface of each target is attached in front of each target. By disposing the shutter 35 in front of each target, contamination from other sputtered targets can be prevented.
  • a controller for performing a series of processes is provided for each of the magnetron / cathode units 31, 32, 33. That is, the process controllers 31A, 32A, and 33A can receive an input signal from the film forming apparatus, run a program programmed to operate the process according to a flowchart, and output an operation instruction to the apparatus.
  • Each of the process controllers 31A, 32A, and 33A basically has the configuration of the computer 31A1 shown in FIG. 21, and includes an input unit 31A2, a storage medium 31A3 having a program and data, a processor 31A4, and an output unit 31A5. Is controlling.
  • the input unit 31A2 enables input of commands from the outside.
  • the program has a base layer having a body-centered cubic structure (bcc), a magnetic layer, and a capping layer in a field region on the side of two opposing bonding wall surfaces of the magnetoresistive elements arranged on the substrate.
  • a program for forming a hard bias laminate for applying a bias magnetic field to the film includes a program for executing the following procedures (a) to (c).
  • Any of the underlayer, magnetic layer, and capping layer For depositing layers by sputtering
  • the step (b) of introducing the processing gas is a step of introducing the processing gas and adjusting the gas pressure to 20 Pa or less, Further, (d) a program for executing a procedure for applying a magnetic field of 30 mT (300 G) or less to the surface of the target.
  • a more preferable program is as follows: (c) The procedure for forming any one of the underlayer, the magnetic layer, and the capping layer is as follows: The substrate holder on which the substrate is placed is set to an initial height, and while rotating the substrate holder, high frequency power having a frequency of 60 MHz or more is supplied to the first magnetron / cathode unit, and the body-centered cubic structure (bcc) is obtained.
  • the substrate holder is set to a third height, and while rotating the substrate holder, high frequency power having a frequency of 60 MHz or more is supplied to the third magnetron / cathode unit, and Cr, Mo, Nb, Ru, Ta, Ti, V And sputtering a third target material composed of W or an alloy thereof onto a substrate to form a capping layer;
  • FIG. 22 is a schematic view schematically showing a magnetic sensor laminate according to the present invention.
  • FIG. 23 is a schematic view showing a magnetic sensor laminate in which a photoresist mask is arranged on a magnetoresistive element.
  • the magnetic sensor laminate 102 manufactured according to the present invention is composed of a plurality of laminated films having different compositions at a substantially central portion of a bottom shield layer 131 as a substrate, and a magnetic field is applied.
  • a magnetoresistive element (reader stack) 110 having a magnetoresistive effect in which an electric resistance value changes is provided.
  • the magnetic sensor stack 102 has a hard bias stack 120 that can apply a bias magnetic field to the reader stack 110 in the field region 124 on the side of the two bonding wall surfaces 110a and 110b facing each other. It has.
  • This magnetic sensor laminate 102 is an intermediate product before separating a sensor for a magnetic read head such as a hard disk drive.
  • the leader stack 110 illustrated in FIG. 22 is a magnetic tunnel junction (MTJ) including an oxide barrier layer (MgO) immediately below the free layer 116.
  • MgO oxide barrier layer
  • the leader stack 110 may be a giant magnetoresistive junction (GMR) made of mostly metal having a very low resistance.
  • GMR giant magnetoresistive junction
  • the leader stack 110 is laminated on a bottom shield layer 131 made of a soft magnetic material such as NiFe, for example, and mainly includes an antiferromagnetic pinning layer (AFM layer) 113 and a synthetic antiferro layer (SAF layer). 114, a spacer layer 115, and a ferromagnetic free layer 116.
  • AFM layer antiferromagnetic pinning layer
  • SAF layer synthetic antiferro layer
  • the AFM layer 113 is made of an antiferromagnetic material such as IrMn, for example.
  • the AFM layer 113 is formed on the bottom shield layer 131 via a pre-seed layer (111 in FIG. 23) made of Ta or the like (not shown) and a seed layer (112 in FIG. 23) made of Ru or the like as necessary. Laminated.
  • the SAF layer 114 is composed of two ferromagnetic layers 114a and 114c coupled in opposite directions through a thin coupling layer (nonmagnetic layer or tunnel insulator layer) 114b.
  • the ferromagnetic layer of the SAF layer 114 includes a pinned layer 114a that is in contact with the AFM layer 113 and a reference layer 114c that is in contact with the coupling layer 114b.
  • the spacer layer 115 is made of a nonmagnetic layer or a tunnel insulator layer, and is formed of, for example, an oxide layer such as MgO.
  • the free layer 116 is formed of, for example, a ferromagnetic material such as CoFeB, and may be a layer in which a Ta layer and a NiFe layer are stacked on a ferromagnetic material layer such as CoFeB.
  • the free layer 116 is subjected to a bias magnetic field and oriented so as to be perpendicular to the reference layer 114c. This arrangement can increase sensor sensitivity and provide a linear response to an external magnetic field from the storage medium.
  • the bias magnetic field also referred to as “hard bias” is expected to remain constant throughout the life of the disk drive.
  • the hard bias prevents magnetic domains from being formed in the free layer 116.
  • the magnetoresistance change through the reader stack 110 is determined by the relative direction of magnetization between the reference layer 114 c and the free layer 116.
  • the free layer 116 is covered with a cap layer (117a, 117b in FIG. 23) (not shown) selected from, for example, Cr, Ru, Ta, Ti, an alloy group thereof, and C as necessary.
  • a cap layer (117a, 117b in FIG. 23) (not shown) selected from, for example, Cr, Ru, Ta, Ti, an alloy group thereof, and C as necessary.
  • the hard bias laminate 120 is formed in the field region 124 on the bottom shield layer 131.
  • the magnetic layer 122 is formed of, for example, an alloy (permanent magnet) having a hexagonal structure (hcp) selected from an alloy group containing Co and Pt, such as Co—Pt and Co—Cr—Pt.
  • an alloy permanent magnet
  • hcp hexagonal structure
  • the magnetic layer 122 is laminated on the bottom shield layer 131 with the base layer 121 interposed therebetween.
  • the underlayer 121 is made of, for example, an alloy having a body-centered cubic structure (bcc) selected from Cr, Cr—Mo, Cr—Ti, Nb, Ta, W and an alloy group thereof.
  • the underlayer 121 has a thickness of, for example, 3 to 7 nm in the field region 124 and less than 3 nm in the bonding wall surfaces 110a and 110b.
  • a seed layer (not shown) may be further provided on the foundation layer 121, so that the foundation layer may be doubled. That is, the bonding wall surfaces 110a and 110b of the field region 124 and the leader stack 110 may further include, for example, a seed layer selected from CrB, CrTiB, MgO, Ru, Ta, Ti, and an alloy group thereof.
  • the seed layer has a thickness of less than 1 nm in the field region 124 and a thickness of 0.5 to 2 nm in the bonding wall surfaces 110a and 110b.
  • the magnetic layer 122 is covered with a capping layer 123 selected from, for example, Cr, Mo, Nb, Ru, Ta, Ti, V and W or an alloy thereof.
  • an insulating layer 119 made of, for example, Al 2 O 3 , SiO 2 , Si—N, HfO 2 or a combination thereof is disposed below the magnetic layer 122 and on the bonding wall surfaces 110 a and 110 b of the leader stack 110.
  • the insulating layer 119 has a thickness of 2 to 10 nm in the field region 124 and a thickness of 2 to 5 nm in the bonding wall surfaces 110a and 110b.
  • the magnetic sensor laminate 102 includes a bottom shield layer 131 below the insulating layer 119 and a top shield layer 132 above the capping layer 123.
  • These shield layers 131 and 132 are made of a soft magnetic material such as NiFe, for example. That is, the leader stack 110 and the field region 122 are sandwiched between two thick soft magnetic shield layers 131 and 132.
  • the magnetic sensor laminate 102 is formed by first forming the leader stack 110 on the bottom shield layer 131 and then applying, patterning, and developing a photoresist (PR) mask 141.
  • a bottom shield layer 131 for example, a bottom shield layer made of a soft magnetic material such as NiFe is employed.
  • the photoresist mask 141 is for masking a part of the leader stack 110 during the etching process.
  • etching process for example, ion beam etching (IBE) or reactive ion etching (RIE) is employed.
  • IBE ion beam etching
  • RIE reactive ion etching
  • a hard mask may be formed on the leader stack 110.
  • the photoresist mask 141 is first used to form a hard mask and is removed by an oxygen ashing process before etching the leader stack 110.
  • an insulating layer 119 is coated on the magnetic sensor stack (the side of the leader stack 110 including the photoresist mask 141 and its bonding wall surfaces 110a and 110b).
  • an oxide insulator 3 to 5 nm
  • an oxide insulator such as Al 2 O 3 or SiO 2 is preferable.
  • PVD physical vapor deposition
  • IBD ion beam deposition
  • CVD chemical vapor deposition
  • the ALD method and the CVD method have an advantage that conformal film formation is possible.
  • a hard bias laminate 120 is formed on the insulating layer 119.
  • the base layer 121 is formed on the insulating layer 119, and then the magnetic layer 122 and the capping layer 123 are formed.
  • FIG. 2 is a schematic view showing a manufacturing stage of a magnetoresistive element using a photoresist having a recess.
  • a photoresist 141 is formed thereon, and is developed and patterned.
  • the illustrated photoresist 141 has a recess 152 in the lower portion, and may be one layer or two layers. In the case of a two-layer photoresist, the lower layer is usually thinner and overetched to form the recess 152. This facilitates the photoresist lift-off process.
  • the portion of the magnetoresistive element laminate 151 that is not covered with the resist is etched by an ion beam.
  • the shape of the bonding wall of the magnetoresistive element 110 can be controlled.
  • the joint wall is narrower and becomes wider as it approaches the lower layer, like a skirt.
  • the joining wall can be made more vertical and the spread of the lower part can be reduced, and a substantially vertical joining wall can be obtained.
  • reference numeral 116 denotes a free layer.
  • the magnetoresistive element 110 is patterned by ion beam milling (IBM) at various angles, and a desired bonding wall surface can be formed. Milling causes redeposition on the photoresist 141 and the bonding wall surface, so that the bonding wall surface is usually cleaned so that an electrical short circuit does not occur on the bonding wall surface.
  • IBM ion beam milling
  • an insulating layer 119 selected from Al 2 O 3 , SiO 2 , Si—N, HfO 2, or a combination thereof is formed to electrically connect the bonding wall surfaces. Insulate.
  • the insulating layer 119 can be formed by physical vapor deposition (PVD).
  • PVD physical vapor deposition
  • IBD ion beam film formation
  • ALD atomic layer film formation
  • Atomic layer deposition has a very low deposition rate, but can provide conformal coverage. In ion beam deposition at an intermediate incident angle (45 degrees or less), the coverage of the bonding wall surface is increased. Because this coverage is thin, the inboarding and outboarding issues are less important.
  • FIG. 3 is a schematic view showing a method of forming a magnetoresistive element by reactive ion etching (RIE) or a combination of ion beam etching (IBE) and RIE.
  • RIE reactive ion etching
  • IBE ion beam etching
  • a metal hard mask 153 such as Ta is formed on the magnetoresistive element laminate 151, and a thin film (stop layer 154) having a function of stopping etching is formed below. .
  • the photoresist is used to fix the metal hard mask 153 and is removed by an oxygen process.
  • RIE reactive ion etching
  • an insulating layer 119 such as Ox or Nit is formed to electrically insulate the bonding wall surfaces.
  • the insulating layer 119 can be formed by, for example, ion beam deposition (IBD), atomic layer deposition (ALD), or chemical vapor deposition (CVD).
  • PCM refers to a point cusp magnetic field (see Japanese Patent Application Laid-Open Nos. 2003-318165 and 2002-363740).
  • the simplest structure of the hard bias laminate is composed of an underlayer such as Cr, a magnetic layer usually made of a Co—Pt alloy, and a capping layer such as Ta.
  • the magnetic layer (hexagonal structure; hcp) is epitaxially grown on the underlayer (body-centered cubic structure; bcc), and as a result, a magnetic layer having an in-plane random C-axis distribution is formed.
  • a substrate (wafer) 21 to be processed is placed on a substrate holder 22.
  • the substrate 21 is carried onto the substrate holder 22 through a horizontal slot (not shown) using a handling robot.
  • An RF bias 23 is applied to the substrate holder 22 from an RF power source (not shown).
  • the substrate bias RF bias 23 has a frequency of 13.56 MHz or 50 to 70 MHz when the frequency of the cathode side RF power supply is 60 MHz and the output density is 4 W / cm 2 or more. Set to a different bias.
  • the substrate bias is supplied with power less than 50W.
  • the inside of the chamber 10 is exhausted to a predetermined degree of vacuum by an exhaust system. Further, a processing gas containing Ne, Ar, or Ne is introduced into the chamber 10 from the gas introduction system. In this embodiment, Ne is used as the processing gas.
  • the main valve 11 When introducing Ne into the chamber 10, the main valve 11 is closed and the opening of the butterfly valve 17 of the bypass manifold 16 is adjusted to finely adjust the gas pressure.
  • the gas pressure during film formation is adjusted to 20 Pa or less.
  • the film formation is performed at a gas pressure of 3 to 15 Pa.
  • the first to third different targets are attached to the three magnetron cathodes 31, 32, and 33, respectively.
  • a metal such as Cr, Nb, or W is used.
  • a hexagonal (hcp) magnetic alloy such as Co and Pt is used.
  • the third target for example, Ta, Cr, Ti, W or an alloy thereof is used.
  • each target has a disk shape and is formed in the same size.
  • Each target is installed with an inclination in the range of 10 degrees to 30 degrees with respect to the substrate placement surface of the substrate holder 22.
  • each target is installed so as to be inclined at 10 to 20 degrees with respect to the substrate mounting surface.
  • the displacement of the cathode center in the mounting surface direction with respect to the central axis of the substrate holder 22 is at least 100 mm, and the cathode center is 50 to 250 mm away from the substrate processing surface along the central axis direction.
  • RF1 power of 0.5 to 3 kW is supplied to the first magnetron / cathode unit 31 from the RF power source at a frequency of 60 MHz or more.
  • a magnetic field of 30 mT (300 G) or less is generated on the surface of the target, and the first target is sputtered on the substrate to form an underlayer having a body-centered cubic structure (bcc).
  • the thickness of the underlayer to be formed is 3 to 7 nm and the crystal orientation is (110).
  • the substrate holder 22 is maintained at the initial height.
  • the RF power supply is switched, and 1 to 5 kW of RF2 power is supplied to the second magnetron / cathode unit 32 from the RF power supply at a frequency of 60 MHz or more.
  • a magnetic field of 30 mT (300 G) or less is generated on the target surface, and the second target is sputtered on the substrate to form a hexagonal crystal structure (hcp) magnetic layer.
  • the thickness of the magnetic layer to be deposited is 10 to 40 nm, and the crystal orientation is (10.0) so that the C axis is dominant in the plane.
  • the substrate holder 22 is maintained at the second height.
  • the distance adjusting mechanism 38 of the second magnetron / cathode unit 32 is controlled to widen the distance (T / M distance) between the magnetron and the target and reduce the magnetic field.
  • the magnetic field on the target surface is preferably set to 10 to 20 mT (100 to 200 G).
  • the RF power source is switched, and 1 to 5 kW RF power is supplied to the third magnetron / cathode unit 33 from the RF power source at a frequency of 60 MHz or more. Then, a magnetic field of 30 mT (300 G) or less is generated on the target surface, a third target is sputtered on the substrate, and a capping layer is formed. During the formation of the capping layer, the substrate holder 22 is maintained at the third height.
  • the constituent material of the third target may be made from the constituent material of the first target.
  • FIG. 4 is a schematic view schematically showing the film formation state of the hard bias laminate by the film forming method of the present embodiment.
  • 120 is a hard bias laminate
  • 141 is a photoresist
  • 119 is an insulating layer
  • 116 is a free layer
  • 155 is redeposition after IBE patterning of the junction wall of the magnetoresistive element
  • 131 is a bottom shield layer.
  • the effect of seams caused by normal incidence sputtering can be minimized.
  • the hard bias laminate 120 can be uniformly formed, and the non-uniformity between the outboard and the inboard is small.
  • the photoresist 141 is finally removed by a lift-off process or a chemical milling process (CMP). Then, as shown in FIG. 5, thick NiFe shield layers 131 and 132 are formed above and below the structure including the magnetoresistive element and the hard bias stack 120. In the hard bias laminate 120, a magnetic field having a sufficient magnitude (horizontal) is applied to the magnetic layer in order to adjust the particle moment, whereby a bias magnetic field is generated in the free layer 116 of the magnetoresistive element.
  • CMP chemical milling process
  • the film forming apparatus 1 includes a chamber 10 having a rotating substrate holder 22 and an RF power source for applying a substrate bias.
  • a chamber 10 having a rotating substrate holder 22 and an RF power source for applying a substrate bias.
  • three magnetron / cathode units 31, 32, and 33 that are inclined and shifted with respect to the central axis of the substrate holder 22 and a very high-frequency RF power source connected thereto are provided.
  • Ne gas is used as the processing gas, and the magnetic field on the target surface is reduced so that the plasma diffuses. Sputtered particles originating from the target reach the wafer with nearly normal incidence across the substrate, resulting in good thickness and stoichiometric uniformity.
  • the hard bias laminate film forming method and film forming apparatus 1 of the first embodiment it is possible to minimize the influence of seams caused by normal incidence sputtering. Further, even when a large wafer is used, a hard bias laminate having a low non-uniformity between the outboard and the inboard and a high coercive force of 238.74 kA / m (3000 Oe) can be formed.
  • a favorable hard bias laminate can be formed on the inclined or vertical junction wall surface of the magnetoresistive element having the patterned structure.
  • FIG. 6 is a schematic diagram showing a film forming apparatus for a hard bias laminate according to the second embodiment.
  • the film forming apparatus 41 of this embodiment includes the iPVD apparatus (3PCM chamber) 1 of FIG. 1, and a wafer processing unit 42 and a robot chamber 43 are connected to this to form a collective apparatus. ing.
  • the iPVD apparatus 1 of FIG. 1 has three targets arranged in the chamber 10, it is referred to as “3PCM chamber” for convenience of description.
  • the wafer processing unit 42 includes a front open hangar (FOUP) 44 and accommodates a cassette on which a substrate (wafer) is placed.
  • FOUP front open hangar
  • the robot chamber 43 is formed in, for example, a hollow hexagonal column shape, includes a handling robot (not shown), and is connected between the 3PCM chamber 1 and the wafer processing unit 42. This robot delivers a wafer between the 3PCM chamber 1 and the wafer processing unit 42.
  • planar shapes of the robot chamber 43 and other chambers are schematically shown and are not limited thereto. The same applies to the following embodiments.
  • the handling robot of the robot chamber 43 takes out the wafer on which the magnetoresistive element is formed and the insulating layer is formed from the cassette of the hangar 43, and transfers it to the 3 PCM chamber 1. Moving.
  • a hard bias laminate (underlayer / magnetic layer / capping layer) is formed using each of the three magnetron / cathode units 31, 32, 3 targets (Cr, Co—Pt, Ta, etc.). Do the membrane.
  • the procedure for forming the hard bias stack in the 3PCM chamber 1 is as described in the first embodiment, and the description thereof is omitted.
  • the completed wafer is returned to the hangar 44. Since the hangar 44 includes two units, one unit can be dedicated to a wafer before processing, and the other unit can be used for a processed wafer.
  • the film forming apparatus 41 and the film forming method of the second embodiment basically have the same functions and effects as those of the first embodiment.
  • the wafer processing unit 42 including the wafer storage 44 is connected via the robot chamber 43, it is easy to handle the unprocessed wafer and the processed wafer. is there. Further, since the 3PCM chamber 1 and the wafer processing unit 42 are connected via the robot chamber 43, the wafer is not exposed to the outside air.
  • FIG. 7 is a schematic view showing a hard bias laminate film forming apparatus according to the third embodiment.
  • the film forming apparatus 51 of the present embodiment includes the film forming apparatus 41 of FIG. 6 having the iPVD apparatus 1 of FIG. 1 as a main body.
  • the film forming apparatus 51 of this embodiment includes an ion beam etching (IBE) chamber 52 and an insulating layer film forming chamber 53 in addition to the film forming apparatus 41 of FIG. That is, in the film forming apparatus 51 of this embodiment, the IBE chamber 52 and the insulating layer film forming chamber 53 are connected to the robot chamber 43 disposed in the center. Therefore, the wafers are transferred to the wafer processing unit 42, the 3PCM chamber 1, the IBE chamber 52, and the insulating layer film forming chamber 53 by operating a handling robot in the robot chamber 43.
  • IBE ion beam etching
  • the wafer processing unit 42 including the front open hangar (FOUP) 44 and the robot chamber 43 are configured in the same manner as in the second embodiment.
  • the handling robot in the robot chamber 43 takes out the wafer from the cassette of the storage 44 and moves it to the IBE chamber 52 which is the original processing apparatus.
  • a magnetoresistive element laminate 151 and a patterned photoresist 141 are formed on this wafer (see FIG. 2A).
  • the magnetoresistive element stack 151 is etched to form the magnetoresistive element 110 (see FIG. 2B). After the magnetoresistive element 110 is formed, the wafer is moved to the insulating layer deposition chamber 53 by a robot.
  • a thin non-reactive layer having electrical insulation is deposited and surface stabilization is performed (see FIG. 2C).
  • the magnetoresistive element subjected to the surface stabilization treatment is moved to the 3PCM chamber 1 by a robot in order to form a three-layer hard bias laminate (underlayer / magnetic layer / capping layer). .
  • a hard bias stack (underlayer / magnetic layer / capping layer) is formed using the targets (Cr, Co—Pt, Ta, etc.) of the three magnetron / cathode units 31, 32, 3. Be filmed.
  • the procedure for forming the hard bias stack in the 3PCM chamber 1 is as described in the first embodiment, and the description thereof is omitted.
  • the completed wafer is returned to the hangar 44.
  • the film forming apparatus 51 and the film forming method of the third embodiment basically have the same functions and effects as those of the first embodiment.
  • the IBE chamber 52 and the insulating layer film forming chamber 53 are connected to the robot chamber 43, the magnetoresistive element, the insulating layer, and the hard bias stack A series of film forming steps can be performed continuously.
  • CVD chemical vapor deposition
  • FIG. 8 is a schematic view showing a hard bias laminate film forming apparatus according to the fourth embodiment.
  • the film forming apparatus 61 of this embodiment includes the film forming apparatus 41 of FIG. 6 having the iPVD apparatus 1 of FIG. 1 as a main body.
  • the robot chamber 43 constituting the film forming apparatus 41 in FIG. 6 is referred to as a first robot chamber (RC1 chamber).
  • an ion beam etching (IBE) chamber 52 is connected to the RC1 chamber 43 in the same manner as the film forming apparatus 51 of FIG.
  • the film forming apparatus 61 of this embodiment has a second robot chamber (RC2 chamber) 63 connected to the RC1 chamber 43 via a connection module 62.
  • An insulating layer deposition chamber 53, a first reactive ion etching (RIE1) chamber 64, and a second reactive ion etching (RIE2) chamber 65 are connected to the RC2 chamber 63.
  • the film forming apparatus 61 of this embodiment constitutes an apparatus capable of performing patterning and insulation of the TMR stack in the original apparatus by IBE or RIE.
  • the 3PCM chamber 1 and the IBE chamber 52 are in a high vacuum, and form a two-block aggregate structure in which the low vacuum RIE chambers 64 and 65 are isolated via the connection module 62 and the RC2 chamber 63.
  • the handling robot in the robot chamber 43 takes out the wafer from the cassette of the storage 44 and moves it to the IBE chamber 52 which is the original processing apparatus.
  • the magnetoresistive element stack 151 is etched to form the magnetoresistive element 110 (see FIG. 2B).
  • the wafer is moved to the RIE 1 chamber 64 via the RC 1 chamber 43 and RC 2 chamber 63 robots.
  • the hard mask is etched by ion beam etching (IBE) or reactive ion etching (RIE) such as by CF 4 chemical processing. Thereafter, an oxygen plasma process is performed for ashing the photoresist.
  • IBE ion beam etching
  • RIE reactive ion etching
  • the wafer is moved to the RIE2 chamber 65 by the robot in the RC2 chamber 63, and a methanol etching process is performed. Further, in the RIE2 chamber 65, an Ar ion etching process is performed in order to remove oxide from the bonding wall surface of the magnetoresistive element 110.
  • the present invention is not limited to this, and the oxide may be removed by performing IBE treatment with low ion energy in the IBE chamber 52.
  • the wafer is moved to the insulating layer deposition chamber 53 by the robot in the RC2 chamber 63.
  • alumina Al 2 O 3
  • Si—N is deposited by chemical vapor deposition (CVD) to perform surface stabilization processing.
  • the wafer After the formation of the insulating layer, the wafer is moved to the 3PCM chamber 1 via the RC2 chamber 63 and RC1 chamber 43 robots.
  • a hard bias stack (underlayer / magnetic layer / capping layer) is formed using the targets (Cr, Co—Pt, Ta, etc.) of the three magnetron / cathode units 31, 32, 3. Be filmed.
  • the procedure for forming the hard bias stack in the 3PCM chamber 1 is as described in the first embodiment, and the description thereof is omitted.
  • the completed wafer is transferred to the cassette in the hangar 44.
  • the IBE process in which the photoresist is milled by the redevaporation material and the hard bias material, the IBE process can be further performed at an acute angle after the capping layer is formed. This allows the next wet etch process to be performed on the photoresist sidewall.
  • the film forming apparatus 61 and the film forming method of the fourth embodiment basically have the same functions and effects as those of the first embodiment.
  • a two-block assembly structure in which a high vacuum chamber such as the 3PCM chamber 1 and a low vacuum chamber such as the RIE chambers 64 and 65 are separated from each other via the connection module 62 and the RC2 chamber 63.
  • a high vacuum chamber such as the 3PCM chamber 1
  • a low vacuum chamber such as the RIE chambers 64 and 65
  • RIE chambers 64 and 65 are separated from each other via the connection module 62 and the RC2 chamber 63.
  • These chambers are connected to the integrated RC1 chamber 43 and RC2 chamber 63 via the connection module 62, and the robot handles the wafer so that the wafer is not exposed to the outside air.
  • another 3PCM chamber or 2PCM chamber can be connected to the RC1 chamber 63.
  • a more complicated hard bias laminate can be manufactured.
  • the underlayer is divided into two layers having different compositions for controlling crystal orientation, and two layers for optimizing Ms and coercive force. And a single capping layer.
  • a thin hard bias stack is important. For this reason, the crystal orientation control and the optimization of the magnetic layer, which have been performed for the development of the longitudinal recording medium, are effective.
  • FIG. 9 is a schematic view showing a film forming apparatus for a hard bias laminate according to the fifth embodiment.
  • a film forming apparatus 71 of this embodiment includes an iPVD apparatus 81 in which two targets are arranged, and a wafer processing unit 42, a robot chamber 43, and physical vapor deposition (PVD).
  • a chamber 72 is connected to form a collecting apparatus.
  • the iPVD apparatus 81 since the iPVD apparatus 81 has two targets arranged in the chamber 10, it is referred to as “2PCM chamber” for convenience of description.
  • the wafer processing unit 42 includes a front open hangar (FOUP) 44 and accommodates a cassette on which a substrate (wafer) is placed.
  • FOUP front open hangar
  • the robot chamber 43 includes a handling robot (not shown), and is connected between the 2PCM chamber 81 and the wafer processing unit 42. Therefore, the delivery of the wafer to the respective apparatuses of the 2PCM chamber 81, the PVD chamber 72, and the wafer processing unit 42 is performed by operation of a handling robot in the robot chamber 43.
  • FIG. 10 is a schematic diagram showing an iPVD apparatus used in the fifth embodiment.
  • symbol is attached
  • the iPVD apparatus (2PCM chamber) 81 of the present embodiment is different from the iPVD apparatus (3PCM chamber) 1 of FIG. is doing.
  • the third magnetron / cathode unit 33 for attaching the third target is not provided. Therefore, the substrate holder 22 is controlled in two steps, the initial height and the second height.
  • the film formation of the third target is performed in the PVD chamber 72 connected to the robot chamber 43.
  • at least one DC power function for performing conventional sputtering is mounted on a capping layer such as Ta.
  • the handling robot in the robot chamber 43 takes out the wafer from the cassette of the hangar 44 and moves it to the 2PCM chamber 81.
  • RF1 power of 0.5 to 3 kW is supplied to the first magnetron / cathode unit 31 from an RF power source at a frequency of 60 MHz or more. Then, a magnetic field of 30 mT (300 G) or less is generated on the surface of the target, and the first target is sputtered on the substrate to form an underlayer such as a Cr alloy. During the formation of the underlayer, the substrate holder 22 is maintained at the initial height.
  • the RF power supply is switched, and 1 to 5 kW of RF2 power is supplied to the second magnetron / cathode unit 32 from the RF power supply at a frequency of 60 MHz or more.
  • a magnetic field of 30 mT (300 G) or less is generated on the surface of the target, and the second target is sputtered on the substrate to form a magnetic layer such as Co—Pt.
  • the substrate holder 22 is maintained at a second height.
  • the distance adjusting mechanism of the second magnetron / cathode unit 32 is controlled to widen the distance (T / M distance) between the magnetron and the target and weaken the magnetic field.
  • the wafer after the formation of the underlayer / magnetic layer is moved to the PVD chamber 72 by the robot, and the capping layer is formed.
  • the capping layer can be deposited by DC or preferably RF (ionization) sputtering.
  • the substrate holder 22 in the PVD chamber 72 is set to the third height.
  • the completed wafer is returned into the hangar 44 by the robot.
  • the film forming apparatus 71 and the film forming method of the fifth embodiment basically have the same functions and effects as those of the first embodiment.
  • the wafer processing unit 42 and the PVD chamber 72 are connected via the robot chamber 43, it is easy to handle the wafer before processing and the processed wafer.
  • the 3PCM chamber 1, the PVD chamber 72, and the wafer processing unit 42 are connected via the robot chamber 43, the wafer is not exposed to the outside air.
  • FIG. 11 is a schematic view showing a film forming apparatus for a hard bias laminate according to the sixth embodiment.
  • a film forming apparatus 91 includes a film forming apparatus 71 shown in FIG. 10 mainly composed of an iPVD apparatus 81 shown in FIG.
  • the film forming apparatus 91 of the present embodiment includes an ion beam etching (IBE) chamber, an insulating layer film forming chamber 53, a PVD chamber 72, and a reactive ion etching (RIE) chamber 92. It has.
  • IBE ion beam etching
  • RIE reactive ion etching
  • the IBE chamber 52, the insulating layer film forming chamber 53, the PVD chamber 72, and the RIE chamber 92 are connected to the central robot chamber 43. Therefore, the wafers are transferred to the wafer processing unit 42, 3 PCM chamber 1, IBE chamber 52, insulating layer deposition chamber 53, PVD chamber 72, and RIE chamber 92 by operating the robot in the robot chamber 43. Is called.
  • the RIE chamber 92 includes methanol chemical treatment.
  • the insulating layer deposition chamber 53 is configured by any one of atomic layer deposition (ALD), chemical vapor deposition (CVD), or ionized PVD chambers.
  • ALD atomic layer deposition
  • CVD chemical vapor deposition
  • ionized PVD chambers ionized PVD chambers.
  • a CVD or ALD chamber that can provide a conformal insulating coating is preferred.
  • a single target iPVD chamber or 2PCM chamber may be placed to provide more flexibility in hard bias stack structure and coverage.
  • wafer processing unit 42 including the front open hangar (FOUP) 44 and the robot chamber 43 are configured in the same manner as in the fifth embodiment.
  • the handling robot in the robot chamber 43 takes out the wafer from the cassette of the hangar 44 and moves it to the IBE chamber 52 which is the original processing apparatus.
  • the IBE chamber 52 which is the original processing apparatus.
  • a magnetoresistive element laminate and a patterned photoresist are formed.
  • the magnetoresistive element stack is etched to form a magnetoresistive element.
  • the wafer After the formation of the magnetoresistive element, the wafer is moved to the insulating layer film forming chamber 53 by a robot, and a thin non-reactive layer having electrical insulation is formed and surface stabilization processing is performed.
  • the magnetoresistive element subjected to the surface stabilization process is moved to the 2PCM chamber 81 by a robot in order to form a three-layer hard bias laminate (underlayer / magnetic layer / capping layer).
  • RF1 power of 0.5 to 3 kW is supplied to the first magnetron / cathode unit 31 from an RF power source at a frequency of 60 MHz or more. Then, a magnetic field of 30 mT (300 G) or less is generated on the surface of the target, and the first target is sputtered on the substrate to form an underlayer such as a Cr alloy. During the formation of the underlayer, the substrate holder 22 is maintained at the initial height.
  • the RF power supply is switched, and 1 to 5 kW of RF2 power is supplied to the second magnetron / cathode unit 32 from the RF power supply at a frequency of 60 MHz or more.
  • a magnetic field of 30 mT (300 G) or less is generated on the surface of the target, and the second target is sputtered on the substrate to form a magnetic layer such as Co—Pt.
  • the substrate holder 22 is maintained at the second height.
  • the distance adjusting mechanism of the second magnetron / cathode unit 32 is controlled to widen the distance (T / M distance) between the magnetron and the target and weaken the magnetic field.
  • the wafer after the formation of the underlayer / magnetic layer is moved to the PVD chamber 72 by the robot, and the capping layer is formed.
  • the capping layer can be deposited by DC or preferably RF (ionization) sputtering.
  • the substrate holder 22 in the PVD chamber 72 is set to the third height.
  • the completed wafer is returned into the hangar 44 by the robot.
  • the film forming apparatus 91 and the film forming method of the sixth embodiment basically have the same functions and effects as those of the first embodiment.
  • the IBE chamber 52 and the insulating layer film forming chamber 53 are connected to the robot chamber 43, the magnetoresistive element, the insulating layer, and the hard bias stack A series of film forming steps can be performed continuously. Further, since these processing chambers are connected via the robot chamber 43, the wafer is not exposed to the outside air.
  • CVD chemical vapor deposition
  • FIG. 12 is a schematic view showing a hard bias laminate film forming apparatus according to the seventh embodiment.
  • the film forming apparatus 101 of this embodiment includes a film forming apparatus 61 in FIG. 8 mainly composed of the iPVD apparatus 1 in FIG. That is, in the film forming apparatus 101 of this embodiment, the iPVD apparatus (2PCM) 81 shown in FIG. 10 is connected to the first robot chamber (RC1 chamber) 43 in addition to the film forming apparatus 61 shown in FIG. That is, the film forming apparatus 101 of this embodiment includes an iPVD apparatus (3PCM) 1 and an iPVD apparatus (2PCM) 81, and continuously forms a hard bias stack in these chambers 1 and 81.
  • 3PCM iPVD apparatus
  • 2PCM iPVD apparatus
  • the film forming apparatus 101 of this embodiment performs patterning and insulation of the magnetoresistive element in the original apparatus by ion beam etching (IBE) or reactive ion etching (RIE). Configures an executable device.
  • the 3PCM chamber 1, 2PCM chamber 81 and IBE chamber 52 are in high vacuum, and constitute a two-block aggregate structure in which the low vacuum RIE chambers 64 and 65 are isolated via the connection module 62 and the RC2 chamber 63. ing.
  • the handling robot in the robot chamber 43 takes out the wafer from the cassette of the storage 44 and moves it to the IBE chamber 52 which is the original processing apparatus.
  • the magnetoresistive element stack 151 is etched to form the magnetoresistive element 110 (see FIG. 2B).
  • the IBE chamber 52 can be used when fixing a Ta metal hard mask prior to reactive ion etching (RIE), or when etching the magnetoresistive element completely prior to hard bias stack deposition.
  • RIE reactive ion etching
  • the wafer is moved to the RIE 1 chamber 64 via the robots of the RC 1 chamber 43 and the RC 2 chamber 63.
  • the hard mask is etched by ion beam etching (IBE) or reactive ion etching (RIE) such as by CF 4 chemical processing.
  • IBE ion beam etching
  • RIE reactive ion etching
  • the wafer is moved to the RIE2 chamber 65 by the robot in the RC2 chamber 63, and photoresist ashing by O 2 process and methanol etching of the magnetoresistive element are performed. Thereafter, low-pressure ion beam milling can be performed to remove the oxidized portions of the junction wall and the field region.
  • the wafer is moved to the insulating layer deposition chamber 53 by the robot in the RC2 chamber 63.
  • alumina Al 2 O 3
  • Si—N is deposited by chemical vapor deposition (CVD) to perform surface stabilization processing.
  • the wafer After the formation of the insulating layer, the wafer is moved to the 3PCM chamber 1 via the RC2 chamber 63 and RC1 chamber 43 robots. In the 3PCM chamber 1, a three-layer hard bias stack (underlayer / magnetic layer / capping layer) is formed.
  • the 2PCM chamber 81 by moving to the 2PCM chamber 81, more layers can be manufactured using the 2PCM chamber 81. For example, it is possible to optimize the Ms and the coercive force by forming an underlayer having two layers having different configurations in order to control the crystal orientation and dividing the magnetic layer into two layers.
  • IBE processing in which the photoresist is milled with a redeposition material and a hard bias material, further IBE processing can be performed at an acute angle after the capping layer is deposited. This allows the next wet etch to be performed on the photoresist sidewall.
  • the film forming apparatus 101 and the film forming method of the seventh embodiment basically have the same functions and effects as those of the first embodiment.
  • the seventh embodiment since the 3PCM chamber 1 and the 2PCM chamber 81 are combined, a hard bias laminate having a more complicated structure can be formed.
  • a two-block aggregate structure in which a high vacuum chamber such as the 3PCM chamber 1 and a low vacuum chamber such as the RIE chambers 64 and 65 are isolated via the connection module 62 and the RC2 chamber 63 can be configured. These chambers are connected to the integrated RC1 chamber 43 and RC2 chamber 63 via the connection module 62, and the robot handles the wafer so that the wafer is not exposed to the outside air.
  • a hard bias laminate was formed in the field region using photoresist using the hard bias laminate deposition apparatus (3PCM chamber) 1 and the deposition method shown in FIG.
  • the vapor deposition was performed on a silicon substrate (SiO 2 substrate) with 6 Pa Ne gas and 10 W substrate bias.
  • the magnetron 1 generates an average magnetic field of 200 mT (2 kG) at the maximum on the CoPt target surface, whereas the magnetron 2 generates a magnetic field of 100 mT (1 kG) at the maximum.
  • the magnetic field is measured parallel to the target surface between the magnetron pole pieces. Coverage decreases slightly as the magnetic field increases, but is not critical.
  • the ratio close to 100% proves the good vertical directionality of the sputtered particles.
  • FIG. 14 is an explanatory diagram showing a situation where ionization is further improved by reducing the magnetic field on the target surface with the magnetron 2.
  • the magnetic field was reduced by increasing the thickness of the target or the distance between the target and the magnetron (T / M distance).
  • a and B in FIG. 14 are the data of FIG. 13 as a comparative example, and the maximum magnetic field is 100 mT (1 kG).
  • the magnetic field was reduced to 30 mT (300 G).
  • the magnetic field was further reduced to 15 mT (150 G).
  • the magnetic field from B to D is systematically reduced by increasing the thickness of the target or the distance between the target and the magnetron (T / M distance). Especially in D, the best coverage performance is obtained.
  • FIG. 15 is an explanatory diagram showing coverage when various gases are used.
  • Ne shows the best coverage, and the best coverage is obtained particularly when the pressure is higher than 3 Pa.
  • Ne is better than Ar.
  • the cross section and ion mass are small. These factors increase the mean free path and the straightness of the sputtered particles, particularly in the plasma sheath.
  • Ne gas is used at a low pressure, the sputtering rate is reduced, but at a relative pressure (3 Pa or higher), it is about twice that of Ar gas.
  • Ar most of the sputtered particles diffuse and return to the target and chamber walls.
  • Ne treatment gas With the 6 Pa Ne treatment gas, good joint coverage was obtained, but signs of void formation were observed in some TEM images. By applying a low power bias, no fatal voids were formed. At a high pressure of 10 Pa, no substrate bias was required to eliminate voids.
  • the present inventor has found that the maximum effect can be obtained from the reduction of the magnetic field, thereby reducing the density of the plasma and that the plasma is diffused in a wide region between the target and the substrate.
  • FIG. 16 is an explanatory diagram showing the film coercivity (Hc) of Co-25Pt (25 nm) / CrTi (5 nm) on the SiO 2 substrate.
  • Hc film coercivity
  • the coercivity of Co-25Pt / CrTi was compared using Ar and Ne.
  • the substrate bias was compared between 0 W and 10 W. It can be seen that the film coercivity is improved by using Ne gas and setting a relatively weak substrate bias.
  • a hard bias laminate was formed in a field region using a photoresist by a conventional general film formation method.
  • the film forming conditions were set so as to deviate from the film forming method of the present invention.
  • FIG. 17 is a schematic view showing a hard bias laminate formed by a film forming method of a comparative example.
  • a film having a high-density film H in a region parallel to the substrate surface and a porous film P on the bonding wall surface was formed.
  • a hard bias laminate with improved collimation was formed. Although the shadowing effect is reduced, the presence of low energy neutral particles results in the formation of a porous membrane near the junction wall and on the steep junction wall.
  • FIG. 18 is a schematic view showing an observation state of trench embedding.
  • CMP chemical milling process

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Abstract

La présente invention concerne un procédé et un dispositif servant à former une bonne pile de polarisation dure présentant un champ coercitif élevé sur la surface d'une paroi de jonction graduée ou verticale d'un élément magnétorésistif à motifs en utilisant un PVD d'ionisation. Un film de polarisation dur est formé en appliquant un champ magnétique de 30 mT (300 G) ou moins à la surface d'une cible sous une pression de gaz de 20 Pa ou moins, créée en introduisant du Ne dans un espace de traitement, en déposant une couche de fondation bcc en fournissant une puissance électrique de 60 MHz ou plus à une première unité cathodique (31) et en pulvérisant un premier matériau cible tout en faisant tourner un support de substrat (22) à une hauteur initiale ; en déposant une couche magnétique en fournissant une puissance électrique de 60 MHz ou plus à une deuxième unité cathodique (32) et en pulvérisant un deuxième matériau cible composé d'un alliage hcp tout en faisant tourner le support de substrat (22) à une deuxième hauteur ; et en déposant une couche de recouvrement en fournissant une puissance électrique de 60 MHz ou plus à une troisième unité cathodique (33) et en pulvérisant un troisième matériau cible tout en faisant tourner le support de substrat (22) à une troisième hauteur.
PCT/JP2009/065790 2008-09-30 2009-09-10 Dispositif et procédé servant à déposer une pile de polarisation dure, et dispositif et procédé servant à fabriquer une pile de capteurs magnétiques Ceased WO2010038593A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111058005A (zh) * 2019-08-09 2020-04-24 河源市众拓光电科技有限公司 一种氮化物和金属薄膜沉积与修整设备及其应用
CN116092953A (zh) * 2023-03-07 2023-05-09 天津中科晶禾电子科技有限责任公司 一种晶圆键合装置、方法及复合衬底组件
CN119710595A (zh) * 2024-12-27 2025-03-28 合肥致真精密设备有限公司 一种集成x荧光光谱仪的磁控溅射镀膜设备及其工作方法

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JPH02294476A (ja) * 1989-05-02 1990-12-05 Nippon Telegr & Teleph Corp <Ntt> マグネトロンスパッタリング用カソード
JPH11229135A (ja) * 1998-02-18 1999-08-24 Canon Inc スパッタ装置および成膜方法
JP2000285419A (ja) * 1999-01-27 2000-10-13 Alps Electric Co Ltd スピンバルブ型薄膜素子およびその製造方法とそのスピンバルブ型薄膜素子を備えた薄膜磁気ヘッド
JP2005042143A (ja) * 2003-07-24 2005-02-17 Anelva Corp 磁性材料のドライエッチング方法
JP2005097672A (ja) * 2003-09-25 2005-04-14 Anelva Corp マルチカソードイオン化物理的気相成膜装置

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JPH02294476A (ja) * 1989-05-02 1990-12-05 Nippon Telegr & Teleph Corp <Ntt> マグネトロンスパッタリング用カソード
JPH11229135A (ja) * 1998-02-18 1999-08-24 Canon Inc スパッタ装置および成膜方法
JP2000285419A (ja) * 1999-01-27 2000-10-13 Alps Electric Co Ltd スピンバルブ型薄膜素子およびその製造方法とそのスピンバルブ型薄膜素子を備えた薄膜磁気ヘッド
JP2005042143A (ja) * 2003-07-24 2005-02-17 Anelva Corp 磁性材料のドライエッチング方法
JP2005097672A (ja) * 2003-09-25 2005-04-14 Anelva Corp マルチカソードイオン化物理的気相成膜装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111058005A (zh) * 2019-08-09 2020-04-24 河源市众拓光电科技有限公司 一种氮化物和金属薄膜沉积与修整设备及其应用
CN116092953A (zh) * 2023-03-07 2023-05-09 天津中科晶禾电子科技有限责任公司 一种晶圆键合装置、方法及复合衬底组件
CN119710595A (zh) * 2024-12-27 2025-03-28 合肥致真精密设备有限公司 一种集成x荧光光谱仪的磁控溅射镀膜设备及其工作方法

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