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WO2010032432A1 - Corps fritté contenant de l’oxyde d’yttrium, et cible de pulvérisation - Google Patents

Corps fritté contenant de l’oxyde d’yttrium, et cible de pulvérisation Download PDF

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Publication number
WO2010032432A1
WO2010032432A1 PCT/JP2009/004593 JP2009004593W WO2010032432A1 WO 2010032432 A1 WO2010032432 A1 WO 2010032432A1 JP 2009004593 W JP2009004593 W JP 2009004593W WO 2010032432 A1 WO2010032432 A1 WO 2010032432A1
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Prior art keywords
oxide
sintered body
indium
yttrium
body according
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English (en)
Japanese (ja)
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井上一吉
宇都野太
川嶋浩和
矢野公規
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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Definitions

  • FIG. 2 is a chart showing X-ray diffraction results of the sintered body obtained in Example 1.
  • FIG. 3 is a chart showing X-ray diffraction results of the sintered body obtained in Example 2.
  • FIG. 6 is a chart showing X-ray diffraction results of the sintered body obtained in Example 3.
  • FIG. 6 is a chart showing X-ray diffraction results of the sintered body obtained in Example 4.
  • 6 is a chart showing X-ray diffraction results of a sintered body obtained in Example 5.
  • FIG. 7 is a chart showing X-ray diffraction results of a sintered body obtained in Example 6.
  • FIG. 7 is a chart showing X-ray diffraction results of the sintered body obtained in Example 7.
  • yttrium oxide is completely dissolved in indium oxide. Since yttrium oxide is completely dissolved in indium oxide, there is no single yttrium oxide, and the sputtering target obtained from this sintered body can perform stable sputtering and has surface smoothness. Can provide an excellent oxide semiconductor.
  • “completely dissolved” means that yttrium oxide is randomly substituted in the crystal lattice of indium oxide, and the diffraction peak from the Y 2 O 3 crystal is observed by X-ray diffraction. Means not observed.
  • the solid solution state can be obtained as a solid solution ratio when the lattice constant obtained from the obtained X-ray diffraction corresponds to the composition ratio of each metal element.
  • the amount of yttrium oxide dissolved in indium oxide is preferably larger than the amount of yttrium oxide not dissolved.
  • the atomic ratio Y / (In + Y) of indium element and yttrium element is preferably more than 0.0 and less than 0.5.
  • the content ratio Y / (In + Y) of yttrium oxide is expressed by the ratio of the number of moles of metal yttrium to the total number of moles of metal atoms constituting the metal oxide as a raw material. The same applies hereinafter.
  • Y / (In + Y) is 0.5 or more, Y 2 O 3 is detected in addition to InYO 3 , and an oxide semiconductor film excellent in surface smoothness is obtained by abnormal discharge during sputtering. There is a risk of being lost.
  • Y / (In + Y) is 0.005 or more and 0.45 or less, more preferably 0.01 or more and 0.35 or less, and particularly preferably 0.02 or more and 0.3 or less.
  • the content ratio of the metal oxide of positive tetravalent or higher (metal of positive tetravalent or higher) / [In + Y + (metal of positive tetravalent or higher)] is preferably 0.0001 or more and less than 0.005.
  • (positive tetravalent or higher metal) / [In + Y + (positive tetravalent or higher metal)] is less than 0.0001, the amount of positive tetravalent or higher metal oxide is too small, and the effect of reducing bulk resistance is obtained. There is a risk of not being able to.
  • the second sintered body of the present invention contains an oxide of two or more metals selected from the group consisting of indium, tin and zinc and yttrium oxide, and is selected from the group consisting of indium, tin and zinc of yttrium.
  • the atomic ratio [Y / (total of two or more metals) ⁇ 100] with respect to two or more metals is more than 0.0 and 50 atom% or less.
  • the atomic ratio is preferably 0.001 to 40 atomic%, more preferably 2.0 to 15 atomic%.
  • yttrium oxide may be dissolved in indium oxide, may exist as an InYO 3 compound, or both It may exist in the form of With such a configuration, yttrium oxide does not exist alone, and a high-performance oxide semiconductor film excellent in surface smoothness can be obtained without trouble such as abnormal discharge.
  • the sintered body of the third embodiment may further contain a Zn 2 SnO 4 compound.
  • a Zn 2 SnO 4 compound By including the Zn 2 SnO 4 compound, the bulk resistance of the target itself is reduced, and the effect of more stable sputtering can be obtained.
  • any of the above sintered bodies of the present invention preferably contains a positive tetravalent or higher metal element.
  • the content is preferably 100 to 1000 ppm.
  • the bulk resistance can be further reduced by containing a positive tetravalent or higher metal element. When it exceeds 1000 ppm, the obtained oxide semiconductor film may not exhibit normally-off semiconductor characteristics.
  • the positive tetravalent or higher metal element examples include Ti, Zr, Hf, Nb, Ta, W, Ge, Sn, and Ce. Among these, Ce is particularly preferable.
  • the cerium element has an effect of lowering the bulk resistance of the sintered body by being slightly (1000 atomic ppm or less) incorporated into the indium oxide crystal at a sintering temperature of 1200 ° C. or higher.
  • a temperature at which the thin film is crystallized for example, about 250 ° C. to 450 ° C.
  • the amount of cerium incorporated into indium oxide is reduced, and the effect of reducing resistance (the effect of generating carriers) is reduced.
  • the carrier of the obtained crystalline indium oxide film can be controlled, a normally-off oxide semiconductor can be easily obtained.
  • the molded body is sintered at a temperature of 1200 ° C. to 1600 ° C. for 2 to 200 hours to obtain a sintered body.
  • a high-density sintered body may not be obtained.
  • indium oxide or the like may be thermally decomposed.
  • the temperature is preferably 1300 ° C to 1600 ° C, more preferably 1300 ° C to 1550 ° C.
  • the sintering time is preferably 2 to 200 hours. If it is less than 2 hours, the sintering may not be completed, and a high-density sintered body may not be obtained.
  • the heating is too long, which may be disadvantageous economically.
  • it is 5 to 150 hours, more preferably 10 to 100 hours.
  • the metal oxide thin film of the present invention is formed using the above sputtering target. If necessary, an annealing process is performed after film formation.
  • This metal oxide thin film is a semiconductor thin film, and can be used for a channel etch type, etch stopper type, etc. thin film transistor.
  • the lattice constant of the obtained sintered body was determined by the X-ray diffraction method, the density was measured by the Archimedes method, and the conductivity (resistance) of the sintered body was measured by Mitsubishi Oil Chemical Loresta. Is shown in Table 1. Furthermore, charts showing the X-ray diffraction results of this sintered body are shown in FIGS. 1 to 4, respectively.
  • Example 8 Each metal oxide was weighed so as to have the ratio shown in Table 4, and operations were performed in the same manner as in Example 1 except that the sintering conditions shown in Table 4 were used to obtain a sintered body. Furthermore, the chart which shows the X-ray-diffraction result of these sintered compacts is shown in FIG. In the sintered body of Example 8, a peak of In 2 O 3 was observed, and it was found that yttrium oxide was dissolved in indium oxide. In the sintered body of Example 9, peaks of In 2 O 3 and Y 2 Sn 2 O 7 were observed.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Corps fritté composé d'oxyde d'indium et d'oxyde d'yttrium, possédant un paramètre de réseau entre celui de InYO3 et celui de In2O3. Ledit corps fritté contient l'oxyde de deux types de métal ou plus pris dans un groupe composé d'indium,, d'étain et de zinc et d'oxyde d'yttrium, le rapport atomique de l'yttrium aux deux types de métaux ou plus pris dans le groupe composé d'indium,, d'étain et de zinc dépasse 0,0, mais pas 50 atm%. Le corps fritté est composé de l'oxyde d'étain et de l'oxyde d'yttrium et contient un composé Y2Sn2O7.
PCT/JP2009/004593 2008-09-19 2009-09-15 Corps fritté contenant de l’oxyde d’yttrium, et cible de pulvérisation Ceased WO2010032432A1 (fr)

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JP2010529623A JPWO2010032432A1 (ja) 2008-09-19 2009-09-15 酸化イットリウムを含有する焼結体及びスパッタリングターゲット

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JP2008-241643 2008-09-19
JP2008241643 2008-09-19

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012029407A1 (fr) * 2010-08-31 2012-03-08 Jx日鉱日石金属株式会社 Oxyde fritté et film mince semi-conducteur en oxyde
JP2012051747A (ja) * 2010-08-31 2012-03-15 Jx Nippon Mining & Metals Corp 酸化物焼結体及び酸化物半導体薄膜
WO2012153522A1 (fr) * 2011-05-10 2012-11-15 出光興産株式会社 Cible de pulvérisation à in2o3-zno
WO2013084795A1 (fr) * 2011-12-07 2013-06-13 東ソー株式会社 Corps fritté en oxyde complexe, cible de pulvérisation, film conducteur transparent d'oxyde et procédé pour leur production.
WO2017217529A1 (fr) * 2016-06-17 2017-12-21 出光興産株式会社 Corps fritté à base d'oxyde et cible de pulvérisation
US11078120B2 (en) 2016-04-26 2021-08-03 Idemitsu Kosan Co., Ltd. Oxide sintered body, sputtering target and oxide semiconductor film
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JP2012051747A (ja) * 2010-08-31 2012-03-15 Jx Nippon Mining & Metals Corp 酸化物焼結体及び酸化物半導体薄膜
JP2012051745A (ja) * 2010-08-31 2012-03-15 Jx Nippon Mining & Metals Corp 酸化物焼結体及び酸化物半導体薄膜
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US9418771B2 (en) 2011-12-07 2016-08-16 Tosoh Corporation Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same
WO2013084795A1 (fr) * 2011-12-07 2013-06-13 東ソー株式会社 Corps fritté en oxyde complexe, cible de pulvérisation, film conducteur transparent d'oxyde et procédé pour leur production.
US11078120B2 (en) 2016-04-26 2021-08-03 Idemitsu Kosan Co., Ltd. Oxide sintered body, sputtering target and oxide semiconductor film
WO2017217529A1 (fr) * 2016-06-17 2017-12-21 出光興産株式会社 Corps fritté à base d'oxyde et cible de pulvérisation
KR20190019137A (ko) * 2016-06-17 2019-02-26 이데미쓰 고산 가부시키가이샤 산화물 소결체 및 스퍼터링 타깃
JPWO2017217529A1 (ja) * 2016-06-17 2019-04-04 出光興産株式会社 酸化物焼結体及びスパッタリングターゲット
KR102353398B1 (ko) 2016-06-17 2022-01-19 이데미쓰 고산 가부시키가이샤 산화물 소결체 및 스퍼터링 타깃
US11328911B2 (en) 2016-06-17 2022-05-10 Idemitsu Kosan Co., Ltd. Oxide sintered body and sputtering target
CN114163217A (zh) * 2021-12-15 2022-03-11 先导薄膜材料（广东）有限公司 一种氧化铟钽钇粉体及其制备方法

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