[go: up one dir, main page]

WO2010030050A1 - Procédé de fabrication d’un semi-conducteur organique à couche mince utilisant une séparation de phase d’un mélange de semi-conducteur organique/polymère isolant et transistor organique à couche mince - Google Patents

Procédé de fabrication d’un semi-conducteur organique à couche mince utilisant une séparation de phase d’un mélange de semi-conducteur organique/polymère isolant et transistor organique à couche mince Download PDF

Info

Publication number
WO2010030050A1
WO2010030050A1 PCT/KR2008/005427 KR2008005427W WO2010030050A1 WO 2010030050 A1 WO2010030050 A1 WO 2010030050A1 KR 2008005427 W KR2008005427 W KR 2008005427W WO 2010030050 A1 WO2010030050 A1 WO 2010030050A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
organic
organic semiconductor
substrate
insulating polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2008/005427
Other languages
English (en)
Inventor
Kil Won Cho
Wi Hyoung Lee
Long Zhen Qiu
Jung Ah Lim
Xiao Hong Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
POSTECH Academy Industry Foundation
Original Assignee
POSTECH Academy Industry Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by POSTECH Academy Industry Foundation filed Critical POSTECH Academy Industry Foundation
Publication of WO2010030050A1 publication Critical patent/WO2010030050A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Definitions

  • the present invention relates to a method of forming an organic semiconductor thin film used to manufacture an organic thin film transistor, and, more particularly, to a method of simultaneously forming an organic semiconductor thin layer and a dielectric thin layer using vertical phase separation, and a high-performance organic thin film transistor manufactured using the method.
  • Organic thin film transistors which are drive elements of next-generation displays, have been actively researched.
  • Organic thin film transistors use an organic film as a semiconductor layer instead of a silicon film, and are classified into low-molecular organic thin film transistors, such as oligothiophene, pentacene and the like, and high-molecular organic thin film transistors, such as polythiophene and the like, according to the raw materials of the organic film.
  • Organic thin film transistors are chiefly manufactured using a solution process in which a thin film is formed by dissolving an organic semiconductor in a solvent and then applying the organic semiconductor solution onto a substrate.
  • a solution process in which a thin film is formed by dissolving an organic semiconductor in a solvent and then applying the organic semiconductor solution onto a substrate.
  • a multilayered thin film including a dielectric layer, an organic semiconductor layer and a protective layer is formed using a solution process, there is a problem in that a solvent used in subsequent processes damages the previously-formed lower layer. Therefore, in order to realize a more effective solution process, attempts to form a multilayered thin film in one coating process are being made. Further, in order to decrease the manufacturing cost thereof, methods of manufacturing an organic thin film transistor using a small amount of expensive organic semiconductor is being required.
  • this device can be manufactured only when a crystalline polymer, for example, isotactic PS or high-density PE, is used as the insulating polymer.
  • a crystalline polymer for example, isotactic PS or high-density PE
  • P3HT is crystallized on a substrate, and then an insulating polymer is applied thereon to be vertically separated into a P3HT layer and an insulating polymer layer on the substrate, thereby making a charge transfer channel between source and drain electrodes using a small amount of P3HT.
  • this method is difficult to be commercially used because a complicated process of crystallizing P3HT and solidifying an insulating polymer is required. Further, this method is problematic in that it is difficult to make a device by applying a uniform film onto a substrate of a large area because a drop casting process is used in this method.
  • the present invention relates to a method of preparing a multilayered thin film having a structure of substrate/insulating polymer layer/organic semiconductor layer, and a method of manufacturing an organic thin film transistor using the prepared multilayered thin film.
  • an aspect of the present invention provides a method of forming a multilayered thin film, including: applying a mixed solution of an organic semiconductor and an insulating polymer having different surface energies onto a substrate.
  • the multilayered thin film is formed through vertical phase separation while applying the mixed solution.
  • a material having the smallest difference in surface energy between the material and the substrate is applied right on the substrate.
  • an insulating polymer layer having relatively strong hydrophilicity and high surface energy is formed on the lower end of the multilayered thin film, which is located near the hydrophilic substrate, and an organic semiconductor layer having relatively low hydrophilicity is formed on the upper end of the multilayered thin film.
  • the hydrophilic substrate is a substrate having a hydrophilic group, such as -OH or the like, formed on the surface thereof, and, preferably, is a substrate having higher surface energy than an insulating polymer.
  • the hydrophilic substrate may be a commonly-used silicon (Si) substrate used as a gate electrode.
  • the hydrophilic substrate may be a silicon (Si) substrate coated on the surface thereof with thermally-grown silicon dioxide (SiO 2 ) functioning as a dielectric layer.
  • the organic semiconductor is an organic semiconductor having lower surface energy than the insulating polymer.
  • organic semiconductors which can be solution-processed may be used as the organic semiconductor.
  • the organic semiconductor may be polyalkylthiophene, poly (3, 3-didodecyl-quarterthiophene) (PQT-12) or the like, preferably, P3HT.
  • the insulating polymer is an insulating polymer having higher surface energy than the organic semiconductor.
  • Various kinds of polymers such as polymethylmethacrylate (PMMA) , polystyrene, polymethylstryrene and the like, which can be dissolved in an organic solvent, may be used as the insulating polymer.
  • the difference in surface energy between the organic semiconductor and the insulating polymer is not limited as long as vertical layer separation occurs therebetween. It is preferred that the difference in surface energy therebetween be 2.0 mJ/m 2 or more in order to decrease processing time.
  • the difference in surface energy between the organic semiconductor and the insulating polymer be large in order to allow the vertical layer separation to occur easily.
  • an insulating polymer having a hydrophilic group for example, polymethylmethacrylate (PMMA) , may be used as the insulating polymer.
  • the weight ratio of P3HT and PMMA be 1:99 ⁇ 40:60.
  • P3HT content is less than 3 wt%, it is difficult to interconnect the layer- separated P3HT is difficult. Therefore, it is preferred that the P3HT content be 3 wt% or more in order to allow the layer-separated P3HT to form a plane.
  • Another aspect of the present invention provides a method of manufacturing an organic thin film transistor, including the steps of: providing a substrate; providing a gate electrode on the substrate; coating the substrate with a mixed solution of an organic semiconductor and an insulating polymer having higher surface energy then the organic semiconductor to form an organic semiconductor thin film on an insulating polymer thin film; and forming drain and source electrodes connected with the organic semiconductor thin film.
  • the difference in surface energy between the organic semiconductor and the insulating polymer be large in order to allow the vertical layer separation to rapidly occur during a coating process.
  • the mixed solution may be applied on the substrate using spin-coating or ink-jet printing, preferably, spin coating which can be easily used in a substrate of a large area.
  • a commonly-used silicon (Si) substrate having a dielectric layer or having no dielectric layer or a hydrophilic flexible substrate may be used as the substrate. It is preferred that the substrate have higher surface energy than the insulating polymer.
  • the insulating polymer is PMMA which is a hydrophilic polymer
  • the organic semiconductor is P3HT having lower surface energy than the PMMA.
  • the source and drain electrodes may be formed on the organic semiconductor layer after the formation of the organic semiconductor layer, and may be formed using an ink-jet printer.
  • Still another aspect of the present invention provides a method of manufacturing an organic thin film transistor, including the steps of: providing a substrate; providing a gate electrode on the substrate; forming a dielectric layer on the substrate; coating the dielectric layer with a mixed solution of an organic semiconductor and an insulating polymer having higher surface energy then the organic semiconductor to form an organic semiconductor thin film on an insulating polymer thin film; and forming drain and source electrodes connected with the organic semiconductor thin film.
  • the insulating polymer layer is located between the organic semiconductor layer and the dielectric layer because of the difference in surface energy therebetween.
  • the insulating polymer layer has hydrophobicity compared to the dielectric layer coated with thermally-grown silicon oxide, thus improving the electrical characteristics of the manufactured organic thin film transistor.
  • Still another aspect of the present invention provides an organic thin film transistor, including: a substrate connected with a gate electrode; a first dielectric layer formed on the substrate; a second dielectric layer formed on the first dielectric layer; an organic semiconductor thin film formed on the second dielectric layer; and source and drain electrodes connected with the organic semiconductor thin film.
  • the organic thin film transistor of the present invention since the insulating polymer layer is formed on the dielectric layer coated with silicon oxide, the organic thin film transistor can exhibit excellent electrical characteristics .
  • the weight ratio of the insulating polymer and the organic semiconductor be 20:80 ⁇ 3:97 in order to improve the charge mobility of the organic thin film transistor.
  • the amount of the organic semiconductor is less than 3 wt%, the charge mobility of the organic thin film transistor is decreased.
  • the amount of the organic semiconductor is more than 50 wt%, the charge mobility of the organic thin film transistor is also decreased.
  • the first dielectric layer such as silicon oxide thermally grown on a silicon (Si) substrate
  • the second dielectric layer may have higher surface energy than the first dielectric layer formed thereon, and may be an insulating polymer layer formed by polymerizing polar monomers, for example, hydrophilic monomers, such as methyl methacrylate .
  • the organic semiconductor thin film may be made of an organic semiconductor having lower surface energy than the second dielectric layer, and, preferably, may be made of P3HT.
  • an insulating polymer and an organic semiconductor can be sequentially vertically applied on a substrate through one solution process.
  • an organic thin film transistor according to the present invention in which an insulating polymer thin film and an organic semiconductor thin film are vertically phase-separated, can realize excellent electrical characteristics even when a small amount of organic semiconductor is used. Further, according to the organic thin film transistor of the present invention, since an insulating polymer thin film and an organic semiconductor thin film can be vertically disposed on a substrate using phase separation, the insulation polymer thin film functions as a dielectric layer even when a substrate on which a dielectric layer is not formed is used, and thus the organic thin film transistor can be driven by low voltage and can realize excellent electrical characteristics.
  • an organic thin film transistor of the present invention various solution processes, such as spin coating, ink-jet printing and the like, can be applied, and an insulating polymer thin film and an organic semiconductor thin film can be simultaneously formed, thereby efficiently manufacturing the organic thin film transistor.
  • FIG. 1 is a schematic view showing a process of forming a multilayered thin film which is vertically separated into a substrate, a PMMA layer and a P3HT layer by spin-casting a blend of P3HT and PMMA on a substrate having an SiO 2 insulator layer or a substrate having no SiO 2 insulator layer;
  • FIG. 2 is a graph showing the water contact angle of the multilayered thin film formed using the blend of P3HT and PMMA depending on P3HT content
  • FIG. 3A is a graph showing the change in S2p peak of a multilayered thin film having a composition ratio of P3HT:PMMA (20:80) depending on Ar + sputtering time, which was measured using X-ray photoelectron spectroscopy (XPS)
  • XPS X-ray photoelectron spectroscopy
  • 3B is a graph showing the change in sulfur content of a thin film made of only P3HT (100%) or a multilayered thin film having a composition ratio of P3HT:PMMA (20:80) depending on Ar + sputtering time, which was measured using X-ray photoelectron spectroscopy (XPS) ;
  • XPS X-ray photoelectron spectroscopy
  • FIG. 4 shows atomic force microscope images of P3HT- PMMA thin films which have different composition ratios of P3HT and PMMA and were formed on a silicon substrate, wherein the composition ratios of P3HT and PMMA are 100:0, 8:92, 5:95, 3:97, 2:98 and 1:99, and the scale bar is 200 nm;
  • FIG. 5A is a schematic sectional view showing an organic thin film transistor manufactured using a P3HT-PMMA blend thin film and formed on a substrate having an SiO 2 insulator layer, FIG.
  • FIG. 5B is a graph showing the migration characteristics of transistors manufactured using a thin film made of only P3HT (100%) and a P3HT-PMMA blend (5:95) thin film at a V G of -80 V, wherein I D is a drain-source current, V D is a drain-source voltage and V G is a gate voltage,
  • FIG. 5C is a graph showing the output characteristics of a transistor manufactured using a thin film made of only P3HT (100%)
  • FIG. 5D is a graph showing the output characteristics of a transistor manufactured using a P3HT-PMMA blend (5:95) thin film;
  • FIG. 6 is a graph showing the average charge mobility of an organic thin film transistor manufactured using a P3HT-PMMA blend thin film depending on P3HT content, wherein the average charge mobility thereof was measured in a saturated region;
  • FIG. 7 shows the performances of an organic thin film transistor which was manufactured using a P3HT-PMMA blend thin film on a substrate having no SiO 2 insulator layer and is used in low-current drive apparatuses
  • FIG. 7A is a graph showing the output characteristics of a transistor manufactured using a P3HT-PMMA blend (5:95) thin film, in which the transistor has a channel length of 30 [M and a channel width of 1 mm
  • FIG. 7B is a graph showing the migration characteristics and gate leakage current (Igs) of a transistor manufactured using a P3HT-PMMA blend (5:95) thin film.
  • a heavily-doped n-type silicon substrate including thermally-grown silicon dioxide (SiO 2 ) and a heavily-doped n-type silicon substrate including no thermally-grown silicon dioxide (SiO 2 ) were washed with a Piranha solution, washed with distilled water, and then left in a vacuum oven.
  • a solution (1 wt%) in which P3HT and PMMA were dissolved in chlorobenzene at a predetermined weight ratio was spin-coated on a substrate to form a film.
  • the spin- coating of the solution was conducted at a spin rate of 1500 rpm at room temperature.
  • the formed film was dried in a vacuum oven at 60 ° C to remove solvent residue therefrom.
  • PEDOT/PSS droplets were deposited in line on the dried film using an ink-jet printer .
  • TFT The electrical characteristics of TFT were measured in an accumulation mode at room temperature using Keithley 2400 and 236 source measuring apparatuses.
  • the water contact angle of a film was measured using a FACE contact angle measuring apparatus (Kyowa Kaimenka gabu Co., Inc.).
  • the thickness of a film was measured using an Ellipsometer
  • composition of a film in a thickness direction was analyzed by etching the film using an Ar + gun (3.0 KeV) .
  • a transistor was manufactured by spin-coating a heavily-doped n-type silicon substrate including thermally- grown silicon dioxide (SiO 2 ) with a mixed solution of P3HT and PMMA. The performance of the transistor was measured while decreasing P3HT content from 100% to about 1%, and the results thereof are shown in FIGS. 5 and 6.
  • the charge mobility between source and drain electrodes of a transistor is not greatly different from that of a transistor including pure P3HT.
  • the P3HT content thereof is 20 ⁇ 3 wt%, the charge mobility therebetween is greatly increased, and, when the P3HT content thereof is less than 3 wt%, the charge mobility therebetween is greatly decreased.
  • a transistor was manufactured by spin-coating a heavily-doped n-type silicon substrate including no silicon dioxide (SiO 2 ) with a mixed solution of P3HT and PMMA. The electrical characteristics of the transistor were measured, and the results thereof are shown in FIG 7.
  • a PMMA layer acts as a dielectric layer of an organic thin film transistor, thus manufacturing an organic thin film transistor driven by low power.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

La présente invention concerne un procédé de formation d’une pellicule mince multicouche utilisée pour fabriquer un transistor organique à couche mince et, plus particulièrement, un procédé de formation simultanée d’une couche mince semi-conductrice organique et d’une couche mince diélectrique utilisant une séparation de phase verticale, et un transistor organique à couche mince performant fabriqué par ce procédé. La pellicule mince multicouche de la présente invention est formée par revêtement d’un substrat avec une solution mélangée d’un semi-conducteur organique et d’un polymère isolant présentant des énergies de surface différentes puis en séparant verticalement les phases de la solution mélangée appliquée. La pellicule mince multicouche comprend une couche mince semi-conductrice organique formée sur une couche mince polymère isolante. Le transistor à couche mince organique comprenant la pellicule mince multicouche selon la présente invention peut présenter d’excellentes performances même si une petite quantité de semi-conducteur organique est utilisée. En outre, puisque la pellicule mince de polymère isolant peut être utilisée comme une couche diélectrique du transistor à couche mince organique, un processus de formation de la couche diélectrique n’est pas nécessaire, et les dommages à la couche inférieure de la pellicule mince multicouche, qui se produisent lorsque la pellicule mince multicouche est formée via un processus en solution, peuvent être évités.
PCT/KR2008/005427 2008-09-11 2008-09-12 Procédé de fabrication d’un semi-conducteur organique à couche mince utilisant une séparation de phase d’un mélange de semi-conducteur organique/polymère isolant et transistor organique à couche mince Ceased WO2010030050A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080090070A KR20100031036A (ko) 2008-09-11 2008-09-11 유기반도체/절연성 고분자 블렌드의 상분리를 이용한 유기 반도체 박막 제조방법 및 이를 이용하여 제조되는 유기박막트랜지스터
KR10-2008-0090070 2008-09-11

Publications (1)

Publication Number Publication Date
WO2010030050A1 true WO2010030050A1 (fr) 2010-03-18

Family

ID=42005290

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/005427 Ceased WO2010030050A1 (fr) 2008-09-11 2008-09-12 Procédé de fabrication d’un semi-conducteur organique à couche mince utilisant une séparation de phase d’un mélange de semi-conducteur organique/polymère isolant et transistor organique à couche mince

Country Status (2)

Country Link
KR (1) KR20100031036A (fr)
WO (1) WO2010030050A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102623639A (zh) * 2012-04-10 2012-08-01 合肥工业大学 一步实现图案化和自修饰界面的有机薄膜晶体管制备方法
CN104993053A (zh) * 2015-05-26 2015-10-21 南京邮电大学 一种改善有机薄膜晶体管性能的方法
JP2017098491A (ja) * 2015-11-27 2017-06-01 東ソー株式会社 有機半導体層形成用溶液、有機半導体層、および有機薄膜トランジスタ
US20180175299A1 (en) * 2015-09-02 2018-06-21 Fujifilm Corporation Organic thin film transistor, method of manufacturing organic thin film transistor, organic semiconductor composition, organic semiconductor film, and method of manufacturing organic semiconductor film
US11283023B2 (en) 2017-06-08 2022-03-22 Corning Incorporated Doping of other polymers into organic semi-conducting polymers

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101474601B1 (ko) * 2012-04-24 2014-12-24 주식회사 엘지화학 고분자막 및 이의 제조방법
KR101687491B1 (ko) * 2015-07-16 2016-12-16 한국과학기술원 자발 확산 효과를 이용한 유기 또는 무기 박막 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7173378B2 (en) * 2004-06-23 2007-02-06 Samsung Sdi Co., Ltd. Active matrix organic electroluminescent display device having organic thin-film transistor and method for manufacturing the display device
US7176040B2 (en) * 1999-12-21 2007-02-13 Plastic Logic Limited Inkjet-fabricated integrated circuits
US7300861B2 (en) * 2004-06-24 2007-11-27 Palo Alto Research Center Incorporated Method for interconnecting electronic components using a blend solution to form a conducting layer and an insulating layer
US7351606B2 (en) * 2004-06-24 2008-04-01 Palo Alto Research Center Incorporated Method for forming a bottom gate thin film transistor using a blend solution to form a semiconducting layer and an insulating layer
US7390694B2 (en) * 2005-03-16 2008-06-24 Seiko Epson Corporation Method for manufacturing an organic semiconductor device, as well as organic semiconductor device, electronic device, and electronic apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7176040B2 (en) * 1999-12-21 2007-02-13 Plastic Logic Limited Inkjet-fabricated integrated circuits
US7173378B2 (en) * 2004-06-23 2007-02-06 Samsung Sdi Co., Ltd. Active matrix organic electroluminescent display device having organic thin-film transistor and method for manufacturing the display device
US7300861B2 (en) * 2004-06-24 2007-11-27 Palo Alto Research Center Incorporated Method for interconnecting electronic components using a blend solution to form a conducting layer and an insulating layer
US7351606B2 (en) * 2004-06-24 2008-04-01 Palo Alto Research Center Incorporated Method for forming a bottom gate thin film transistor using a blend solution to form a semiconducting layer and an insulating layer
US7390694B2 (en) * 2005-03-16 2008-06-24 Seiko Epson Corporation Method for manufacturing an organic semiconductor device, as well as organic semiconductor device, electronic device, and electronic apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102623639A (zh) * 2012-04-10 2012-08-01 合肥工业大学 一步实现图案化和自修饰界面的有机薄膜晶体管制备方法
CN104993053A (zh) * 2015-05-26 2015-10-21 南京邮电大学 一种改善有机薄膜晶体管性能的方法
US20180175299A1 (en) * 2015-09-02 2018-06-21 Fujifilm Corporation Organic thin film transistor, method of manufacturing organic thin film transistor, organic semiconductor composition, organic semiconductor film, and method of manufacturing organic semiconductor film
JP2017098491A (ja) * 2015-11-27 2017-06-01 東ソー株式会社 有機半導体層形成用溶液、有機半導体層、および有機薄膜トランジスタ
US11283023B2 (en) 2017-06-08 2022-03-22 Corning Incorporated Doping of other polymers into organic semi-conducting polymers

Also Published As

Publication number Publication date
KR20100031036A (ko) 2010-03-19

Similar Documents

Publication Publication Date Title
Pandey et al. Recent advances in the orientation of conjugated polymers for organic field-effect transistors
US8828793B2 (en) Method of manufacturing multilayered thin film through phase separation of blend of organic semiconductor/insulating polymer and organic thin film transistor using the same
US7994495B2 (en) Organic thin film transistors
WO2010030050A1 (fr) Procédé de fabrication d’un semi-conducteur organique à couche mince utilisant une séparation de phase d’un mélange de semi-conducteur organique/polymère isolant et transistor organique à couche mince
EP2377178B1 (fr) Procede de fabrication de reseau nanofibrillaire a semi-conducteur disperse dans un polymere isolant utilisant un melange de semi-conducteur organique/polymere isolant et transistor a film mince organique l'utilisant
US20060273303A1 (en) Organic thin film transistors with multilayer electrodes
WO2014039847A2 (fr) Transistors à effet de champ à base de polymères à orientation macroscopique
KR20120029387A (ko) 유기 박막 트랜지스터의 제조 방법
Xu et al. Newly synthesized high‐k polymeric dielectrics with cyclic carbonate functionality for highly stability organic field‐effect transistor applications
Pandey et al. Unidirectionally Aligned Donor–Acceptor Semiconducting Polymers in Floating Films for High‐Performance Unipolar n‐Channel Organic Transistors
Wang et al. Nanofiber growth and alignment in solution processed n-type naphthalene-diimide-based polymeric field-effect transistors
CN101904011B (zh) 薄膜半导体装置和场效应晶体管
US9263686B2 (en) Method of manufacturing organic thin film transistor having organic polymer insulating layer
Yamamoto et al. Evaluation of molecular orientation and alignment of poly (3-hexylthiophene) on Au (111) and on poly (4-vinylphenol) surfaces
US7863694B2 (en) Organic thin film transistors
US9058981B2 (en) Dielectric composition for thin-film transistors
US20130099215A1 (en) Organic semiconductor film, production method thereof, and contact printing stamp
KR101114955B1 (ko) 폴리(3-헥실티오펜) 기반 블록공중합체의 자기조립 구조 제어방법
KR20120045328A (ko) 고분자 브러쉬를 이용한 고성능 및 안정한 용액공정용 트랜지스터 제조방법
US7573063B1 (en) Organic thin film transistors
US8134144B2 (en) Thin-film transistor
Choi Electrical characteristics of organic thin‐film transistors with polyvinylpyrrolidone as a gate insulator
KR20170098776A (ko) 존 캐스팅 방법을 이용한 유기 박막의 제조방법 및 이에 의해 제조된 유기 박막을 포함하는 유기 박막 트랜지스터
US7586119B2 (en) Low temperature-cured polymer gate insulation layer and organic thin film transistor using the same
CN102227813A (zh) 薄膜晶体管用栅极绝缘膜形成剂

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08811920

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08811920

Country of ref document: EP

Kind code of ref document: A1