WO2010027178A2

WO2010027178A2 - Deposition apparatus and deposition method using the same

Info

Publication number: WO2010027178A2
Application number: PCT/KR2009/004906
Authority: WO
Inventors: Chang Ho Kang; Hyun Goo Kwon; Sung Tae Namgoong; Sung Kwan Son
Original assignee: SNU Precision Co Ltd
Current assignee: SNU Precision Co Ltd
Priority date: 2008-09-05
Filing date: 2009-09-01
Publication date: 2010-03-11
Anticipated expiration: 2011-03-05
Also published as: JP2012502177A; CN102217038A; TWI410604B; TW201024656A; CN102217038B; KR101018644B1; JP5280542B2; KR20100028836A; WO2010027178A3

Abstract

A transmission chamber connected to the processing chamber, a substrate seating part located in the processing chamber to seat a substrate, a deposition source facing the substrate seating part and storing a source material, and a thickness measuring part installed in the transmission chamber to directly measure a practical thickness of a deposition layer formed on the substrate. It is possible to directly measure and monitor the practical thickness of the deposition layer using the deposition apparatus employing the thickness measuring part. Thus, a thickness of the deposition layer can be exactly controlled by monitoring the practical thickness of the deposition layer in real time and correcting the deposition control thickness used to control the practical thickness of the deposition layer, so that the reliability and the yield rate of a device fabricated on the substrate can be improved.

Description

DEPOSITION APPARATUS AND DEPOSITION METHOD USING THE SAME

The present disclosure relates to a deposition apparatus and a deposition method using the same, and more particularly, to a deposition apparatus and method capable of monitoring a practical thickness of a layer deposited on a substrate in real time.

An organic light emitting device (OLED) is an emerging next generation display following displays such as a liquid crystal display (LCD) and a plasma display panel (PDP).

The OLED uses a scheme of sequentially forming a positive electrode, an organic material layer and a negative electrode on a substrate, supplying a voltage between the positive electrode and the negative electrode to thereby move electrons and holes to the organic material layer, and then recombining the electrons and the holes to emit light. Herein, the organic material layer is typically formed by using a thermal deposition method. A conventional deposition apparatus for forming the typical organic material layer employs a sensor for monitoring a thickness of a layer deposited on the substrate. This sensor is disposed to be exposed to a deposition source that heats and evaporates an organic material. Thus, the sensor detects an amount of the organic material attached thereto and converts the amount of the organic material into the thickness of the layer deposited on the substrate. That is, the thickness of the layer deposited on the substrate is indirectly detected using the sensor. However, since this scheme is an indirect scheme not a scheme of practically measuring the thickness of the layer deposited on the substrate, the accuracy of the thickness measurement is deteriorated and it is difficult to monitor a practical thickness of the layer deposited on the substrate in real time. Moreover, since there is no method of verifying the practical thickness of the layer deposited on the substrate, the defect on the thickness may be discovered when evaluating features of the device after the deposition process is terminated and thus it may reduce a yield rate of the device.

The present disclosure provides a deposition apparatus employing a thickness measuring part capable of measuring a practical thickness of a layer deposited on a substrate, and a deposition method using the same.

In accordance with an exemplary embodiment, a deposition apparatus includes: a processing chamber having a reaction space therein; a transmission chamber connected to the processing chamber; a substrate seating part located in the processing chamber to seat a substrate thereon; a deposition source facing the substrate seating part and storing a source material; and a thickness measuring part installed in the transmission chamber to directly measure a practical thickness of a deposition layer formed on the substrate.

The thickness measuring part may use an ellipsometer.

A light penetrating plate may be installed at one side of the transmission chamber where the ellipsometer is disposed.

The deposition apparatus may further include a sensor installed at one side within the processing chamber to sense an amount of the source material evaporated from the deposition source and calculate a conversion thickness of the deposition layer.

A plurality of processing chambers and a plurality of transmission chambers may be prepared and connected to each other in one direction, each of the processing chambers including a deposition source installed therein and each of the transmission chambers including a thickness measuring part installed therein.

The deposition apparatus may further include a monitoring unit connected to the sensor to adjust a thickness of the deposition layer formed on the substrate.

The monitoring unit may be connected to a control unit that is connected to the deposition source to control power supplied to the deposition source and a deposition processing time.

The deposition apparatus may further include a mask holder connected to a lower portion of the substrate seating part, wherein a shadow mask may be installed in the mask holder.

The deposition apparatus may further include an auxiliary mask including at least one mask pattern and facing an inactive region of the substrate among opening regions of the shadow mask.

Driving units may be disposed at both ends of the auxiliary mask to change the location of the mask pattern by moving the auxiliary mask, the driving units being connected to the mask holder.

In accordance with another exemplary embodiment, a deposition method includes: preparing a substrate in a chamber; forming a first deposition layer over the substrate by depositing a source material; moving the substrate into a transmission chamber and directly measuring a practical thickness of the first deposition layer; comparing the practical thickness of the first deposition layer with a target thickness; and adjusting processing conditions based on the comparison result.

After adjusting the processing conditions, a second deposition layer may be formed under the adjusted processing conditions.

Before forming the first deposition layer, the deposition method may further include establishing the target thickness and a deposition control thickness.

A conversion thickness of the first deposition layer may be calculated by sensing an amount of the source material at a sensor during forming the first deposition layer.

The deposition process may be stopped when the conversion thickness of the first deposition layer reaches the deposition control thickness.

The deposition control thickness may be changed when adjusting the processing conditions based on the comparison result.

The substrate may include an active region and an inactive region and the practical thickness of the first deposition layer formed in the inactive region may be measured.

An average value of the practical thickness of the second deposition layer formed under the adjusted processing conditions and the practical thickness of the first deposition layer may be compared with the target thickness.

After adjusting the processing conditions by comparing the practical thickness of the first deposition layer with the target thickness, the deposition method may further include continuously depositing different source materials on the substrate.

The different source materials may be continuously deposited on the substrate by moving a substrate seating part where the substrate is seated into at least one of processing chambers that are connected to each other in one direction.

Before depositing the different source materials, the deposition method may further include changing the location of a mask pattern of an auxiliary mask to change the location of the inactive region of the substrate exposed by the mask pattern.

As describe above, it is possible to directly measure and monitor the practical thickness of the deposition layer using the deposition apparatus employing the thickness measuring part. Thus, a thickness of the deposition layer can be exactly controlled by monitoring the practical thickness of the deposition layer in real time and correcting the deposition control thickness used to control the practical thickness of the deposition layer, so that the reliability and the yield rate of a device fabricated on the substrate can be improved.

Exemplary embodiments can be understood in more detail from the following description taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a view of a deposition apparatus in accordance with an embodiment of the present invention;

FIG. 2 is a flowchart for explaining a procedure of controlling a thickness of a deposition layer using the deposition apparatus described in FIG. 1;

FIG. 3 is a schematic view of a major part of a deposition apparatus in accordance with a modification of the embodiment described in FIG. 1;

FIG. 4 is a plan view of an A region of the deposition apparatus described in FIG. 3;

FIG. 5 is a cross-sectional view taken along a B-B’ line described in FIG. 4;

FIG. 6 is a conceptual view of an auxiliary mask in accordance with the modification described in FIG. 3; and

FIG. 7 is a view of an organic light emitting device fabricated by using the deposition apparatus described in FIG. 3.

Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. The present invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. Furthermore, the same or like reference numerals represent the same or like constituent elements, although they appear in different embodiments or drawings of the present invention.

FIG. 1 is a view of a deposition apparatus in accordance with an embodiment of the present invention.

Referring to FIG. 1, the deposition apparatus includes a processing chamber 100, a transmission chamber 110 connected to an upper side portion of the processing chamber 100, a substrate seating part 300 connected to an inner wall of an upper portion of the processing chamber 100 and in which a substrate 200 is seated, a mask holder 320 connected to a lower portion of the substrate seating part 300, a shadow mask 330 installed in the mask holder 320, a deposition source 400 disposed to face the substrate seating part 300, a thickness measuring part 500 installed on an outer wall of a lower portion of the transmission chamber 110, and a robot arm 150 installed within the transmission chamber 100 to move the substrate 200 in the processing chamber 100 into the transmission chamber 110. Moreover, the deposition apparatus includes a sensor 600 disposed at one inner side of the processing chamber 100 to sense an amount of a source material 401 evaporated from the deposition source 400, and a shutter (not shown) disposed in a space between the substrate seating part 300 and the deposition source 400. The deposition apparatus in accordance with the embodiment of the present invention further includes a vacuum controlling part 700 disposed at one side of the processing chamber 100, a first substrate gate 801 disposed on one outer sidewall of the processing chamber 100, a door (not shown) disposed between the processing chamber 100 and the transmission chamber 110, and a second substrate gate 802 disposed in a sidewall of the transmission chamber 110.

The processing chamber 100 is generally formed in a cylindrical shape or a rectangular box shape and includes a predetermined reaction space for processing the substrate 200. Although the processing chamber 100 is formed in the cylindrical shape or the rectangular box shape in this embodiment, the present invention is not limited to this embodiment. For example, the processing chamber 100 may be shaped to correspond to a shape of the substrate 200. The first substrate gate 801 through which the substrate 200 comes in and out of the processing chamber 100 is formed on one outer sidewall of the processing chamber 100. The substrate gate 801 may be formed on the other outer sidewall of the processing chamber 100. The vacuum controlling part 700 installed at the processing chamber 100 includes a gate 710 combined with one side of the processing chamber 100, a pipe 720 connected to the gate 710, and a vacuum pump 730 connected to the pipe 720. The gate 710 plays a role of shielding or opening the inside of the processing chamber 100, and the pipe 720 and the vacuum pump 730 are connected to the gate 710. Therefore, the processing chamber 100 can be vacuumed by opening the gate 710 and using the vacuum pump 730

The substrate seating part 300 is installed to be connected to the inner wall of the upper portion of the processing chamber 100 to support the substrate 200 coming in the processing chamber 100. The substrate seating part 300 includes a support 301 for supporting the substrate 200 and a driving axle 302 connected to an upper portion of the support 301 to rotate the support 301. Herein, the driving axle 302 is connected to a power unit (not shown) rotating the driving axle 302.

The mask holder 320 is connected to the lower portion of the substrate seating part 300 and the shadow mask 330 is seated on the mask holder 320. The shadow mask 330 is used to make the source material 401 being patterned and deposed on the substrate 200.

The deposition source 400 is disposed to face the substrate seating part 300 and plays a role of evaporating the source material 401 contained in an inner space thereof and providing the evaporated source material onto one side of the substrate 200. Herein, the deposition source 400 in this embodiment is a spot deposition source but is not limited thereto. That is, the deposition source 400 may be a line type deposition source. The deposition source 400 includes a furnace 411 and a heater 412 for heating the furnace 411. The furnace 411 is formed to have a shape whose upper portion is opened and inner space stores the source material 401. The heater 412 is disposed at a side, a lower portion, or both of the furnace 411. It is possible to heat and evaporate the source material 401, e.g., an organic material, stored in the inner space of the furnace 411 by heating the furnace 411 through the use of the heater 412. The heater 412 is connected to a temperature adjusting unit 130 that supplies power to the heater 412. At this point, the temperature of the inner space of the furnace 411 is changed depending on the power supplied to the heater 412 from the temperature adjusting unit 130. The temperature adjusting unit 130 is connected to a control unit 120. The control unit 120 adjusts the power supplied to the heater 412 from the temperature adjusting unit 130 according to a practical thickness of a layer deposited on the substrate 200.

A shutter (not shown) may be further disposed between the substrate seating part 300 and the deposition source 400. The shutter plays a role of controlling a transmission path of the evaporated source material. Herein, the shutter may have various shapes.

The sensor 600 is disposed at one inner side of the processing chamber 100 to sense the amount of the source material evaporated from the deposition source 400. If the source material 401 is evaporated, the sensor 600 senses it and converts the amount of the source material into a deposition thickness. That is, the amount of the source material sensed by the sensor 600 is calculated as a conversion thickness of a layer deposited on the sensor 600. Therefore, the thickness of the layer deposited on the substrate 200 is indirectly detected based on the conversion thickness of the layer deposited on the sensor 600 in real time while the deposition process is performed. However, since the thickness of the layer deposited on the substrate 200 detected by the sensor 600 is an indirect thickness detected from the amount of the source material sensed by the sensor 600, it may be different from the practical thickness of the layer deposited on the substrate 200. The sensor 600 may be any sensor capable of sensing the amount of the source material evaporated and spread from the deposition source 400. For instance, the sensor 600 may include a crystal oscillator.

The sensor 600 is connected to a monitoring unit 140. The monitoring unit 140 displays in real time the thickness of the layer deposited on the sensor 600 obtained while the deposition process is performed, and controls the thickness of the layer deposited on the sensor 600.

The monitoring unit 140 is given a target thickness of the layer to be deposited on the substrate 200 and a deposition control thickness used to control the thickness of the layer deposited on the sensor 600. The monitoring unit 140 is connected to the control unit 120 that controls the power supplied to the deposition source 400. The sensor 600 converts the amount of the source material sensed by itself into the deposition thickness of the layer deposited on the sensor 600 during heating the deposition source 400 and thus depositing the source material 401 on the substrate 200, and, if the deposition thickness reaches the deposition control thickness, the deposition process is stopped. That is, if the monitoring unit 140 sends a signal to the control unit 120, the control unit 120 controls the temperature adjusting unit 130 to stop the supply of the power into the heater 412 so that the deposition process is stopped.

The transmission chamber 110 is connected to one side of the processing chamber 100 where the deposition process is performed. The transmission chamber 110 is formed in a cylindrical shape or a rectangular box shape. Although the transmission chamber 110 is formed in the cylindrical shape or the rectangular box shape in this embodiment, the present invention is not limited to this embodiment. For example, the transmission chamber 110 may be shaped to correspond to the shape of the substrate 200. The second substrate gate 802 through which the substrate 200 comes out of the transmission chamber 110 is formed in one sidewall of the transmission chamber 110. Moreover, although it is not shown, a vacuum control unit (not shown) is connected to the transmission chamber 110. The vacuum control unit changes the pressure within the transmission chamber 110 to vacuum or atmospheric pressure.

The robot arm 150 is disposed in the processing chamber 100 to move the substrate 200 where the source material 401 is deposited into the transmission chamber 110. Herein, the robot arm 150 may be any means capable of moving the substrate 200 in the processing chamber 100 into the transmission chamber 110. In this embodiment, the robot arm 150 uses an antenna that can be extended and shrunk. The substrate 200 disposed in the processing chamber 100 is moved to face the thickness measuring part 500 disposed on the outer wall of the lower portion of the transmission chamber 110, using the robot arm 150. After then, the thickness measuring part 500 measures the practical thickness of the layer deposited on the substrate 200 in a state the substrate 200 is seated on the robot arm 150. The substrate 200 is discharged to the outside through the second substrate gate 802 installed in one sidewall of the transmission chamber 110, using the robot arm 150.

The deposition apparatus in accordance with the embodiment of the present invention includes the thickness measuring part 500 capable of measuring the practical thickness of the layer deposited on the substrate 200. Referring to FIG. 1, the thickness measuring part 500 is installed on the outer wall of the lower portion of the transmission chamber 110. The thickness measuring part 500 directly measures the thickness of the layer deposited on the substrate 200 and thus calculates the practical thickness of the deposition layer. The thickness measuring part 500 in accordance with this embodiment is an ellipsometer measuring the practical thickness of the deposition layer using light. The ellipsometer irradiates light such as laser onto a measurement target layer and analyses the variation of the polarization of light reflected from a surface of the measurement target layer, thereby measuring the thickness of the deposition layer. Therefore, the thickness measuring part 500 includes a light irradiating element 511 for irradiating the light such as the laser and a detecting element 512 for detecting the light reflected from the deposition layer. A first plate 521 and a second plate 522 are disposed in the lower portion of the transmission chamber 110 where the thickness measuring part 500 is disposed. The first plate 521 penetrates the light emitted from the light irradiating element 511 and the second plate 522 penetrates the light reflected from the deposition layer towards the location where the detecting element 512 is disposed. The first and

second plates

521 and 522 are formed with a light penetrating material. A measuring point where the light is emitted to measure the thickness of the layer deposited on the substrate 200 may be in an inactive region of the substrate 200. For the measurement of the thickness, the robot arm 150 moves the substrate 200 so that the inactive region of the substrate 200 disposed on the robot arm 150 is located to correspond to the thickness measuring part 500. Thus, a practical thickness of a layer deposited in an active region of the substrate 200 may be calculated by measuring a practical thickness of a layer deposited in the inactive region of the substrate 200. The thickness measuring part 500 is connected to the monitoring unit 140.

FIG. 2 is a flowchart for explaining a procedure of controlling a thickness of a deposition layer using the deposition apparatus described in FIG. 1.

Hereinafter, the procedure of controlling the thickness of the deposition layer using the deposition apparatus in accordance with the embodiment of the present invention will be described with reference to FIGs. 1 and 2.

First of all, in step S100, the target thickness of the layer to be deposited and the deposition control thickness are established at the monitoring unit 140. An initial value of the deposition control thickness is equal to the target thickness. Then, in step S200, the power is supplied to the heater 412 through the temperature adjusting unit 130 and the deposition layer is formed on the substrate 200 by heating the furnace 411 where the source material 401 is stored. While forming the deposition layer, the sensor 600 senses the amount of the evaporated source material in real time and calculates the sensed amount of the source material as a conversion thickness of the deposition layer in step S300. The monitoring unit 140 displays the conversion thickness of the deposition layer in real time. The conversion thickness of the deposition layer calculated by the sensor 600 is continuously compared with the deposition control thickness established at the monitoring unit 140 in step S400 and, if the conversion thickness reaches the deposition control thickness, the deposition process is stopped. After the deposition process is stopped, the thickness measuring part 500 measures the practical thickness of the deposition layer formed on the substrate 200 in step S500. At this time, after opening a door (not shown) disposed between the processing chamber 100 and the transmission chamber 110 and moving the substrate 200 into the transmission chamber 110 using the robot arm 150, the practical thickness of the deposition layer is measured using the thickness measuring part 500 disposed on the outer wall of the lower portion of the transmission chamber 110.

Subsequently, the practical thickness of the deposition layer is compared with the target thickness or an average value of practical thicknesses is compared with the target thickness in step S600. For instance, in case a first substrate where a deposition layer is formed after the first substrate comes in the processing chamber 100, a practical thickness of the deposition layer formed on the first substrate is compared with the target thickness. Then, if a deposition layer is formed on a second substrate, an average value of the practical thicknesses of the deposition layers formed on the first and second substrates is compared with the target thickness. Subsequently, if deposition layers are continuously formed on third to tenth substrates, average values of practical thicknesses of the deposition layers formed on the first to tenth substrates are compared with the target thickness for each deposition process. In this embodiment, average values of practical thicknesses of deposition layers formed on 10 numbers of substrates are calculated and compared with the target thickness. For example, if a deposition layer is formed on an eleventh substrate following the tenth substrate, an average value of the practical thicknesses of the deposition layers formed the second to eleventh substrates is compared with the target thickness. The present invention is not limited to this embodiment. Therefore, an average value of practical thicknesses of deposition layers formed on various numbers of substrates may be calculated and compared with the target thickness. As described above, in this embodiment, for each deposition process, after comparing the practical thickness of the deposition layer formed on the substrate 200 with the target thickness or comparing an average value of the practical thicknesses of the deposition layers with the target thickness in step S600, the deposition control thickness is corrected in step S700. Then, a thickness of a deposition layer formed in the next deposition process is adjusted by the corrected deposition control thickness in step S800. Therefore, it is possible to form a deposition layer having a reliable thickness on the substrate 200 by measuring a practical thickness of the deposition layer formed on the substrate 200 for each deposition process, comparing the measured practical thickness with the deposition control thickness and correcting the deposition control thickness.

In this embodiment, although the thickness of the deposition layer formed on the substrate 200 is adjusted by using the conversion thickness of the deposition layer calculated at the sensor 600, the present invention is not limited to this embodiment and the thickness of the deposition layer formed on the substrate 200 may be controlled without using the conversion thickness of the deposition layer. That is, the target thickness is established at the monitoring unit 140. Then, the deposition layer is formed on the substrate 200 by supplying the power to the heater 412 and heating the furnace 411. After the deposition process is terminated, the practical thickness of the deposition layer formed on the substrate 200 is measured using the thickness measuring part 500 and the measured practical thickness is compared with the target thickness. In case the practical thickness is not equal to the target thickness, processing conditions such as a deposition speed and the power supplied to the heater 412 are modified. Then, in the next process, the deposition layer is formed under the modified processing conditions.

FIG. 3 is a schematic view of a major part of a deposition apparatus in accordance with a modification of the embodiment described in FIG. 1.

Hereinafter, the deposition apparatus in accordance with the modification will be described with reference to FIG. 3.

Referring to FIG. 3, the deposition apparatus in accordance with the modification is an in-line deposition apparatus and thus formed to have a shape where a plurality of

processing chambers

100a, 100b and 100c and a plurality of

transmission chambers

110a, 110b and 110c are arranged in one direction. For example, in this embodiment, the processing chamber 100 and the transmission chamber 110 described in FIG. 1 may be prepared as plural numbers of chambers that are connected to each other in one direction. Thus, deposition layers may be continuously formed on the single substrate 200 using the deposition apparatus in accordance with the modification. In this modification, the in-line deposition apparatus is fabricated to include 3 numbers of

processing chambers

100a, 100b and 100c and 3 numbers of

transmission chambers

110a, 110b and 110c but the present invention is not limited thereto. That is, the in-line deposition apparatus may include various numbers of processing chambers and transmission chambers.

Referring to FIG. 3, the

processing chambers

100a, 100b and 100c include

deposition sources

400a, 400b and 400c, respectively. The

deposition sources

400a, 400b and 400c may store different source materials from each other. Moreover, each of the

transmission chambers

110a, 110b and 110c is disposed between two adjacent processing chambers, e.g., the

processing chambers

100a, 100b and 100c.

Thickness measuring parts

500a, 500b and 500c are disposed on outer walls of lower portions of the

transmission chambers

110a, 110b and 110c, respectively. The deposition apparatus in accordance with the modification further includes a guide member 310 disposed to face the

deposition sources

400a, 400b and 400c and the

thickness measuring parts

500a, 500b and 500c, a substrate seating part 300 connected to the guide member 310, a mask holder 320 connected to a lower portion of the substrate seating part 300, a shadow mask 330 installed within the mask holder 320, and an auxiliary mask 340 connected to the mask holder 320 and disposed to correspond to an inactive region 200b of the substrate 200 among opening regions of the shadow mask 330. A door (not shown) is installed in a space between each of the

processing chambers

100a, 100b and 100c and a corresponding one of the

transmission chambers

110a, 110b and 110c. When the door is opened, the substrate seating part 300 is moved to face a corresponding one of the

transmission chambers

110a, 110b and 110c or a corresponding one of the

processing chambers

100a, 100b and 100c.

The guide member 310 plays a role of making the substrate seating part 300 where the substrate 200 is seated move to face each of the

processing chambers

100a, 100b and 100c and each of the

transmission chambers

110a, 110b and 110c. Herein, the guide member 310 is formed to have a shape corresponding to a direction where the

deposition sources

400a, 400b and 400c and the

thickness measuring parts

500a, 500b and 500c are arranged. Thus, the substrate seating part 300 connected to the guide member 310 can move to face each of the

processing chambers

100a, 100b and 100c and each of the

transmission chambers

110a, 110b and 110c along the guide member 310.

FIG. 4 is a plan view of an A region of the deposition apparatus described in FIG. 3. FIG. 5 is a cross-sectional view taken along a B-B’ line described in FIG. 4. FIG. 6 is a conceptual view of the auxiliary mask 340 in accordance with the modification of the present invention.

As described in FIGs. 4 and 5, the auxiliary mask 340 is disposed to correspond to the inactive region 200b of the substrate 200 among the opening regions of the shadow mask 330. The auxiliary mask 340 includes a mask pattern 341. The mask pattern 341 may include various numbers of patterns. Referring to FIG. 5, the mask pattern 341 of the auxiliary mask 340 exposes a certain region of the opening regions of the shadow mask 330. Therefore, in the inactive region 200b of the substrate 200, the source material is deposited in a region exposed by the mask pattern 341 of the auxiliary mask 340. As shown in FIG. 4, the location of the mask pattern 341 of the auxiliary mask 340 may be changed. Thus, in the inactive region 200b of the substrate 200, the location of the region exposed by the mask pattern 341 is changed. Referring to FIG. 6, gear members 342 are connected to both ends of the auxiliary mask 340 in a longer direction and a driving motor 343 is connected to the gear member 342. The gear member 342 is connected to the mask holder 320 as described in FIGs. 3 and 4. The driving motor 343 may include one of a stamping motor and a micro moving motor that can precisely control the movement of the auxiliary mask 340. Holes (not shown) are disposed in a lower portion of the auxiliary mask 340, wherein the holes are combined with a precise gear of the gear member 342 to move the auxiliary mask 340. In this embodiment, the auxiliary mask 340 is moved using the gear member 342 and the driving motor 343 but the present invention is not limited thereto. That is, any means capable of changing the location of the mask pattern 341 of the auxiliary mask 340 may be used.

When continuously depositing

source materials

401, 402 and 403 respectively stored in the

deposition sources

400a, 400b and 400c on the single substrate 200, after depositing the source material 401 using the first deposition source 400a, the mask pattern 341 of the auxiliary mask 340 is moved. Then, the source material 402 is deposited using the second deposition source 400b. As a result, a first deposition layer formed using the first deposition source 400a and a second deposition layer formed using the second deposition source 400b are separately disposed from each other in the inactive region 200b of the substrate 200.

Hereinafter, an operation of the deposition apparatus in accordance with the modification will be described with reference to FIGs. 3 and 7.

First of all, the target thickness and the deposition control thickness are established at

monitoring units

140a, 140b and 140c. Then, the substrate 200 is moved into the first chamber 100a through the first substrate gate 801 and the substrate 200 is seated on the support 301 of the substrate seating part 300. At this point, the first deposition source 400a, the second deposition source 400b and the third deposition source 400c store different powder type organic materials as source materials. The shadow mask 330 is installed in the mask holder 320 connected to the lower portion of the substrate seating part 300 and the auxiliary mask 340 is disposed in the location corresponding to the inactive region 200b of the substrate 200 among the opening regions of the shadow mask 330. The driving axle 302 of the substrate seating part 300 moves along the guide member 310 and thus the support 301 connected to the driving axle 302 is located just above the first deposition source 400a. Then, the deposition layer is formed on the substrate 200 by heating and evaporating the first organic material 401 stored in a first furnace 411a. During forming the deposition layer, a first sensor 600a disposed on an inner wall of one side of the first chamber 100a senses an amount of the first organic material 401 that is evaporated in real time and calculates a thickness of a first organic material layer 401a. If the calculated thickness of the first organic material layer 401a obtained by the first sensor 600a reaches the deposition control thickness, the deposition process is stopped. Through these processes, as shown in FIG. 7, the first organic material layer 401a is formed in an active region 200a and the inactive region 200b of the substrate 200. After then, the substrate 200 where the first organic material layer 401a is formed is moved to face the first transmission chamber 110a and a practical thickness of the first organic material layer 401a deposited in the inactive region 200b of the substrate 200 is measured using the first thickness measuring part 500a installed on the outer wall of the lower portion of the first transmission chamber 110a. Subsequently, the practical thickness of the first organic material layer 401a is compared with the target thickness or an average value of practical thicknesses of the first organic material layer 401a is compared with the target thickness. That is, in case of the first substrate that comes in the processing chamber 100a and where the first organic material layer 401a is formed, the practical thickness of the first organic material layer 401a formed on the first substrate is compared with the target thickness. Furthermore, in case an Mth substrate among a plurality of substrates that continuously comes in the processing chamber 100a, M being an integer, wherein the first organic material layer 401a is formed on the Mth substrate, an average value of practical thicknesses of the first organic material layer 401a formed on the plurality of substrates and that of the first organic material layer 401a formed on the Mth substrate is compared with the target thickness. Then, after correcting the deposition control thickness established at the monitoring unit 140, a thickness of the first organic material layer 401a to be formed in the next deposition process is adjusted by the corrected deposition control thickness.

Subsequently, after moving the substrate 200 where the first organic material layer 401a is formed into the second processing chamber 100b and the second transmission chamber 110b, and then the third processing chamber 100c and the third transmission chamber 110c, the processes performed in the first processing chamber 100a and the first transmission chamber 110a are repeated. But, before depositing the second organic material 402 and the third organic material 403, the location of the mask pattern 341 of the auxiliary mask 340 is changed by rotating the gear member 342 connected to the auxiliary mask 340. Namely, as illustrated in FIG. 7, the location of the auxiliary mask 340 is changed so that the first organic material layer 401a, a second organic material layer 402a and a third organic material layer 403a are separately formed from each other in the inactive region 200b of the substrate 200. Then, the substrate 200 where the first organic material layer 401a, the second organic material layer 402a and the third organic material layer 403a are formed is carried out through the second substrate gate 802.

The

deposition sources

400a, 400b and 400c in accordance with this modification use a spot deposition source but the present invention is not limited thereto. That is, the

deposition sources

400a, 400b and 400c may use a line type deposition source. The thickness measuring part 500 measures the thickness of the organic material layer several times by changing the location of the measuring point of the organic material layer. Through this, the thicknesses of the organic material layer that are measured at different locations of the measuring point are compared with each other. As a result, it is possible to verify the uniformity of the deposition layer formed on the substrate 200, whether each opening constructing the line type deposition source is closed or not and a deposition rate.

In this embodiment, although the organic material is used as the source material, the present invention is not limited thereto. Various materials such as an inorganic material and metal may be used as the source material.

As described above, in accordance with the embodiments of the present invention, it is possible to directly measure and monitor the practical thickness of the deposition layer formed on the substrate where a thin film is deposited using the deposition apparatus employing the thickness measuring part. Thus, the thickness of the deposition layer can be exactly controlled by monitoring the practical thickness of the deposition layer formed on the substrate in real time and correcting the deposition control thickness that is used to control the practical thickness of the deposition layer. As a result, the reliability and the yield rate of devices fabricated on the substrate can be improved.

Although the deposition apparatus has been described with reference to the specific embodiments, it is not limited thereto. Therefore, it will be readily understood by those skilled in the art that various modifications and changes can be made thereto without departing from the spirit and scope of the present invention defined by the appended claims.

Claims

A deposition apparatus, comprising:

a processing chamber having a reaction space therein;

a transmission chamber connected to the processing chamber;

a substrate seating part located in the processing chamber to seat a substrate thereon;

a deposition source facing the substrate seating part and storing a source material; and

a thickness measuring part installed in the transmission chamber to directly measure a practical thickness of a deposition layer formed on the substrate.
The deposition apparatus of claim 1, wherein the thickness measuring part uses an ellipsometer.
The deposition apparatus of claim 2, wherein a light penetrating plate is installed at one side of the transmission chamber where the ellipsometer is disposed.
The deposition apparatus of claim 1, further comprising a sensor installed at one side within the processing chamber to sense an amount of the source material evaporated from the deposition source and calculate a conversion thickness of the deposition layer.
The deposition apparatus of claim 1, wherein a plurality of processing chambers and a plurality of transmission chambers are prepared and connected to each other in one direction, each of the processing chambers including a deposition source installed therein and each of the transmission chambers including a thickness measuring part installed therein.
The deposition apparatus of claim 4, further comprising a monitoring unit connected to the sensor to adjust a thickness of the deposition layer formed on the substrate.
The deposition apparatus of claim 6, wherein the monitoring unit is connected to the thickness measuring part and a control unit that is connected to the deposition source to control power supplied to the deposition source and a deposition processing time.
The deposition apparatus of claim 1, further comprising a mask holder connected to a lower portion of the substrate seating part, wherein a shadow mask is installed in the mask holder.
The deposition apparatus of claim 8, further comprising an auxiliary mask including at least one mask pattern and facing an inactive region of the substrate among opening regions of the shadow mask.
The deposition apparatus of claim 9, wherein driving units are disposed at both ends of the auxiliary mask to change the location of the mask pattern by moving the auxiliary mask, the driving units being connected to the mask holder.
A deposition method, comprising:

preparing a substrate in a chamber;

forming a first deposition layer over the substrate by depositing a source material;

moving the substrate into a transmission chamber and directly measuring a practical thickness of the first deposition layer;

comparing the practical thickness of the first deposition layer with a target thickness; and

adjusting processing conditions based on the comparison result.
The deposition method of claim 11, wherein, after adjusting the processing conditions, a second deposition layer is formed under the adjusted processing conditions.
The deposition method of claim 11, before forming the first deposition layer, further comprising establishing the target thickness and a deposition control thickness.
The deposition method of claim 11, wherein a conversion thickness of the first deposition layer is calculated by sensing an amount of the source material at a sensor during forming the first deposition layer.
The deposition method of claim 14, wherein the deposition process is stopped when the conversion thickness of the first deposition layer reaches a deposition control thickness
The deposition method of any one of claims 16, wherein the deposition control thickness is changed when adjusting the processing conditions based on the comparison result.
The deposition method of claim 11, wherein the substrate includes an active region and an inactive region and the practical thickness of the first deposition layer formed in the inactive region is measured.
The deposition method of claim 12, wherein an average value of the practical thickness of the second deposition layer formed under the adjusted processing conditions and the practical thickness of the first deposition layer is compared with the target thickness.
The deposition method of claim 11, after adjusting the processing conditions by comparing the practical thickness of the first deposition layer with the target thickness, further comprising continuously depositing different source materials on the substrate.
The deposition method of claim 19, wherein the different source materials are continuously deposited on the substrate by moving a substrate seating part where the substrate is seated into at least one of processing chambers that are connected to each other in one direction.
The deposition method of claim 20, before depositing the different source materials, further comprising changing the location of a mask pattern of an auxiliary mask to change the location of an inactive region of the substrate exposed by the mask pattern.