WO2010023992A1 - Light-emitting device and method for manufacturing same - Google Patents
Light-emitting device and method for manufacturing same Download PDFInfo
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- WO2010023992A1 WO2010023992A1 PCT/JP2009/058090 JP2009058090W WO2010023992A1 WO 2010023992 A1 WO2010023992 A1 WO 2010023992A1 JP 2009058090 W JP2009058090 W JP 2009058090W WO 2010023992 A1 WO2010023992 A1 WO 2010023992A1
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- light
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- emitting device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Definitions
- the present invention relates to a light emitting device in which a semiconductor light emitting element is covered with a resinous frame-like structure containing a phosphor, and a method for manufacturing the same.
- Many conventional light emitting devices have a structure in which a light emitting element is arranged on a substrate and the periphery of the light emitting element is covered with a sealing resin containing a phosphor.
- a technique is adopted in which a phosphor is excited by light emitted from a light emitting element to generate light having a different wavelength by generating light having a different wavelength.
- the phosphor is mixed with a translucent resin, and is hardened after filling, coating, or coating around the light emitting element.
- Various manufacturing methods such as the potting method of Patent Document 1, the dipping method of Patent Document 2, the screen printing method of Patent Document 3, the method of Patent Document 4, and the mold forming method of Patent Document 5 have been proposed.
- FIG. 4A is a schematic cross-sectional view showing a conventional resin-sealed formation method disclosed in Patent Document 1 below.
- a light emitting element 102 is mounted on an electrode 109 on a substrate 101, and is further covered with a covering material including a phosphor 103.
- the covering material 104 including the phosphor 103 is discharged through the thin tube 107 of the dropping device 108 and dropped into the cavity 106, and then the covering material 104 is cured. It is covered with the covering material 104 containing.
- the method of dropping the potting material in which the phosphor 103 is mixed in advance with the coating material 104 is shaped by the surface tension and viscosity of the coating material when the coating material is solidified. Due to the deformation, not only the dimensional accuracy is not good, but also the shape instability on the wall surface or the liquid level as shown in FIG. 4B, or the manufacturing process may be inclined as shown in FIG. 4C. In either case, the thickness of the covering material 104 covering the light emitting element changes, which leads directly to a product defect.
- the phosphors in the coating material have different specific gravities. Therefore, the phosphors are precipitated at the beginning in the syringe, resulting in an imbalance in the phosphor concentration in the potting material composition.
- the phosphor 103 contained in the coating material 104 in the syringe 108 settles with time and is present in the vicinity of the narrow tube 107. On the other hand, it becomes lean above the syringe.
- the phosphor concentration in the coating material is as set at the beginning of the discharge operation, it gradually changes as the production time elapses, and on the contrary, it becomes further dilute after a certain stage.
- Sedimentation of the phosphor also occurs in the cavity 106 after dripping and before curing. Therefore, not only the phosphor is not uniformly coated around the light emitter, but also the light emission variation of each final product becomes very large. The light-emitting device thus produced is particularly problematic when the light distribution chromaticity is not uniform due to the unevenness of the phosphor amount.
- a screen printing method as shown in FIGS. 5A and 5B is known as means for suppressing variations in coating thickness of a coating material containing a phosphor (Patent Document 3).
- the periphery of the light emitting element 201 mounted on the light emitting device 200 is covered with a coating layer 207 containing a phosphor 202.
- the covering material 203 containing the phosphor 202 is supplied to the upper surface of the screen metal mask 204 having the cavity 206 opened in a predetermined shape, and is further filled in the cavity 206 while being extended by the squeegee 205.
- the covering material thus filled is cured, and the covering layer 207 can be formed around the light emitting element 201 with a predetermined thickness.
- the mold molding method can increase the accuracy of thickness, position, dimensions, concentration, etc., compared to other means.
- 6A to 6C are schematic views showing a coating method by transfer molding (Patent Document 5).
- the transfer molding die 300 has a three-sheet structure.
- the lower mold 301 is provided with a cavity 302 into which a substrate is inserted.
- a cavity 304 for molding a coating layer is provided below the middle mold 303.
- a pot 306 for charging material is provided on the upper side of the middle mold, and the upper mold 305 has a structure in which the material charged in the pot 306 is injected under pressure.
- the substrate 311 on which the light emitting element 310 is mounted is stored in the cavity 302 of the lower mold 301.
- the covering material 313 including the phosphor 312 is charged in an appropriate amount in the pot 306 on the upper side of the middle mold 303.
- the coating material 313 is injected from the injection port 314 through the runner 315 and into the cavity 304 through the gate 316. The pressure is maintained at an appropriate time and temperature to cure the coating material and then remove from the mold.
- this method generates a lot of scrap material in parts other than the product such as the inlet, runner, and pot. Since the phosphor is extremely expensive, there is a big problem from an economical point of view. Further, this method has a problem that there is a limit to molding a large amount in a short time.
- the present invention provides a light-emitting device with high uniformity of a phosphor layer and high productivity, and a method for manufacturing the same.
- the light-emitting device of the present invention is a light-emitting device in which a semiconductor light-emitting element is mounted on a substrate, and the light-emitting element is covered with a resin frame-like structure containing a phosphor, and the light-emitting element and the frame-like structure The space with the body is filled with a translucent resin material.
- a method for manufacturing a light emitting device is a method for manufacturing a light emitting device in which a semiconductor light emitting element is mounted on a substrate, and after the light emitting element is mounted on a substrate, a resin frame-like structure containing a phosphor The light emitting element is covered, and a space between the light emitting element and the frame structure is filled with a translucent resin material.
- a phosphor containing a phosphor formed in a predetermined size and concentration in advance is disposed on a semiconductor light emitting device on a substrate, so that a phosphor layer with high uniformity and a mass-productive device can be obtained.
- a high light-emitting element can be obtained.
- the phosphor composition is a frame-like structure that is already molded into a predetermined shape, the light emission that realizes the desired light emission characteristics without changing the size and concentration during processing. An element can be provided.
- the light distribution chromaticity for each product becomes uniform, there is no need for selection and selection in the final product as in the conventional method, so that the reduction in man-hours and the yield can be satisfactorily suppressed.
- the translucent resin in which the phosphor is blended is formed in the structure in advance, it is possible to obtain much improved dimensional accuracy compared to other manufacturing methods formed on the substrate. As a result, not only the quality of the product but also the function is improved, so that an optical design with a high degree of difficulty can be achieved.
- the space filled with the translucent resin is formed by a structure, the manufacturing cost can be suppressed and the design can be easily changed as compared with the conventional method.
- FIG. 1A is a cross-sectional view schematically showing the light emitting device in the first embodiment of the present invention
- FIG. 1B is a plan view thereof.
- 2A to 2C are cross-sectional views illustrating steps for manufacturing the light emitting device according to the first embodiment of the present invention.
- 3A to 3I are cross-sectional views showing steps of manufacturing a light emitting device according to the second embodiment of the present invention.
- 4A to 4C are cross-sectional views illustrating a conventional method of coating a light emitting element by potting.
- 5A and 5B are cross-sectional views illustrating a conventional method for coating a light emitting element by screen printing.
- 6A to 6C are cross-sectional views showing a conventional method of coating a light emitting element by mold molding.
- the light-emitting device of the present invention includes a semiconductor light-emitting element mounted on a substrate, covered with a resin-made frame-like structure containing a phosphor on the outside thereof, and light-transmitting in the space between the light-emitting element and the frame-like structure. Filled with resin material.
- the resin-like frame-like structure containing the phosphor preferably contains an organic and / or inorganic phosphor and a light scattering agent.
- the resin and / or the translucent resin material constituting the frame-like structure is silicone rubber or gel.
- Silicone rubber or gel has the advantage of high heat resistance. Furthermore, the strain at the time of curing of the translucent resin material is absorbed by the frame structure of silicone rubber or gel, so that a uniform filling layer can be formed.
- a lens is further arranged outside the frame-like structure. Thereby, the directivity of light can be controlled.
- silicone rubber or resin is preferable.
- the frame-like structure is formed in advance so as to cover the light emitting element.
- a frame-like structure that contains a phosphor in a predetermined concentration and is molded into a predetermined shape is disposed in the vicinity of the light-emitting element on the substrate. And filling the space formed by the structure with a translucent resin and then curing it.
- the phosphor may be blended with a translucent resin that fills the space of the frame-like structure containing the phosphor.
- FIG. 1A is a sectional view schematically showing a semiconductor light emitting device according to the present embodiment
- FIG. 1B is a plan view thereof
- FIGS. 2A to 2C are sectional views showing manufacturing steps of the embodiment.
- a lead electrode 402 having a predetermined conductive circuit is formed on the substrate 401 of the light emitting device 400.
- a light emitting element 403 is disposed on the substrate 401 or the lead electrode 402, and the surface of the light emitting element 403 and the lead electrode 402 are electrically connected by a thin metal wire 404.
- a frame-shaped structure 405 containing a phosphor 408 is disposed around the light-emitting element 403, and a space formed by the frame-shaped structure 405, the light-emitting element 403, and the substrate 401 is filled with a light-transmitting resin 406.
- a lens-shaped structure 407 is attached to the exterior.
- the light emitting element 403 is mounted on the substrate 401 using, for example, a die bonder machine, and the lead electrode 402 on the substrate is connected by wire bonding with a fine metal wire 404.
- the material of the substrate 401 is not limited, but a printed substrate such as glass epoxy, polyimide, epoxy resin-impregnated aramid nonwoven fabric, or ceramic can be used favorably. Since recent light emitting devices generate more heat and require more effective heat dissipation, ceramic substrates using ceramic substrates, metal substrates typified by aluminum substrates, substrates using metal oxides such as alumina, etc. It is desirable to use it, but it is not limited to this.
- the type of the light emitting element 403 is not particularly limited.
- a semiconductor layer made of a group III nitride compound that is, a GaN-based, AlGaN-based, InGaN-based, InAlGa-based, or the like is stacked on an element substrate formed of sapphire.
- SiC, GaP, or the like can be used for the element substrate, but the element substrate is not limited thereto.
- the wavelength emitted by the light emitting element 403 varies from the ultraviolet region to the visible region, but is arbitrarily selected according to the purpose. For example, a desired emission color such as blue, red, or green is selected. A plurality of similar light emitting elements can be used. In addition, various light emission colors can be obtained by combining light-emitting elements having different light emission colors.
- the dimensions of the substrate and the light emitting element are not particularly limited. Further, the dimensions of the frame-like structure are also set by the dimensions and quantity of the light emitting elements mounted on the substrate.
- the space formed by the periphery of the inner surface of the frame-like structure and the inner surface of the top plate (the portion of the filler 406 in FIG. 1) is less than the light emitting element to the extent that it does not interfere with the thin metal wires 404 coupled to the light emitting element. It needs to be bigger. Preferably, it is about 0.2 to 1.0 mm larger than the outer periphery of the light emitting element.
- the thickness of the frame-like structure is preferably 0.2 to 2.0 mm as adjusted by the blending amount of phosphor and the emission color. When the thickness is less than 0.2 mm, it is difficult to maintain the shape, and when the thickness exceeds 2.0 mm, the light emission efficiency tends to deteriorate.
- the height is preferably 0.5 to 3 mm.
- the shape of the frame-shaped structure is preferably a bowl to uniformly cover the periphery of a single light emitting element, but when simultaneously covering a plurality of light emitting elements, an appropriate shape is selected depending on the arrangement of the light emitting elements, A circle, a polygon, an ellipse, etc. may be sufficient. Further, depending on the optical design, a hemispherical or aspherical lens shape may be used.
- the shape of the lenticular structure is adjusted by the directivity of light emitted from the desired light emitting device. Depending on the purpose of light collection, diffusion, etc., any shape such as concave, convex, Fresnel, spherical, aspherical surface is used.
- a plurality of lenses having a diameter substantially equal to that of the light emitting elements may be provided for each individual light emitting element, or the plurality of light emitting elements may be simultaneously covered with a single lens.
- an electrode 402 for mounting and connecting a light emitting element 403 and a thin metal wire 404 for connecting a light emitting device are formed on a substrate 401.
- a good electrical conductor such as copper, phosphor bronze, iron or nickel is used, and the surface can be plated with a noble metal such as gold, silver, platinum or palladium.
- the light emitting element 403 needs to be covered with a phosphor.
- a frame-like structure 405 in which a covering material 410 containing a phosphor 408 is molded in advance is disposed in the vicinity of the light emitting element 403.
- a filler 406 is filled into the space 411 formed by the frame-shaped structure 405, the light emitting element 403, and the substrate 401 from the injection port 409.
- the phosphor 408 is selected according to the emission color emitted from the light emitting element 403 and the desired emission color of the light emitting device.
- white light can be obtained by mixing light emitted from a phosphor that emits light having a peak wavelength of about 0.57 ⁇ m and a blue light-emitting element having a peak wavelength of about 0.45 ⁇ m.
- the kind and amount of the phosphor 408 are not particularly limited, and a particulate phosphor can be used regardless of whether it is organic or inorganic.
- a particulate phosphor can be used regardless of whether it is organic or inorganic.
- Red, blue, yellow, and green light are selected from a combination of one or more.
- the amount of the phosphor blended in the coating material is adjusted according to the desired emission color. As an example, the phosphor is added in the range of 5 to 20% by mass with respect to 100% by mass of the coating material.
- an appropriate amount of light scattering material can be blended with the frame structure 405 for the purpose of adjusting directivity.
- the light scattering material include titanium oxide, aluminum oxide, and silicon oxide.
- the covering material 410 constituting the frame-like structure 405, the filler 406 filled in the space 411 formed by the frame-like structure 405 and the light emitting element 403, and the substrate 401, and a resinous composition having translucency are selected.
- the translucent resin material refers to a resin having a transmittance of 90% or more when light having a wavelength of 580 nm is transmitted through a sheet or plate having a thickness of 2 mm.
- This resinous composition can be selected from thermoplastic and thermosetting, and acrylic, polycarbonate, urethane, methacrylic acid, methacrylic acid ester, silicone and the like can be used. Moreover, not only resin but rubber
- a silicone type is desirable because of its excellent light transmittance and heat resistance as well as resistance to ultraviolet rays. Moreover, from the point of relieving stress due to temperature change, it is desirable that the property after curing is rubber or gel. Further, the covering material 410 constituting the frame-like structure 405 and the filler 406 filling the space 411 formed by the frame-like structure 405, the light emitting element 403, and the substrate 401 are not necessarily the same.
- the frame structure 405 is formed by compression molding. Compression molding produces less molding scrap than transfer molding and injection molding, and many molded products can be obtained at one time. In addition, it may be a method obtained by rolling into a sheet and punching or cutting, or a method obtained by slicing an extruded product. Moreover, you may shape
- the frame-like structure 405 is preferably fixed to the substrate 401 with a silicone pressure adhesive.
- a silicone pressure adhesive may be affixed with another adhesive or the like, or the tackiness of the original frame structure material may be used.
- it may be integrally molded directly on the substrate.
- the filling material 406 is filled by a syringe as an example, but a known conventional technique such as potting, screen printing, knife coating, etc. may be used depending on the shape of the frame structure.
- a lens-like structure 407 can be installed in order to further control the directivity.
- the lenticular structure 407 is preferably molded from silicone rubber or silicone resin.
- the lenticular structure 407 can be directly molded on the substrate 401.
- a lens-like structure obtained in advance by conventional mold molding such as compression, transfer, and injection may be pasted on the substrate with an adhesive, adhesive, etc., or a mechanical fitting structure, etc. It may be fixed with.
- the property of the lens-like structure 407 may be glass, resin, or rubber, but it is desirable that the lens-like structure 407 be made of a silicone material in view of excellent light transmittance, heat resistance, and resistance to ultraviolet rays.
- the frame-like structure is obtained by extruding the covering material 602 containing the phosphor 601 by the extrusion molding machine 600.
- the covering material 602 is filled in a cylinder of the extrusion molding machine 600, and is further pressurized by rotating a screw.
- the pressurized covering material 602 is extruded from the base 603 (FIG. 3A), and then heated and cured to obtain a tubular molded product 607 (FIG. 3B).
- Extrusion molding can not only be completed in a short time, but also the coating material 602 is constantly stirred by the rotation of the screw, so that a tube-shaped molded product 607 containing a phosphor is uniformly obtained continuously.
- the base 603 by changing the base 603, it can be made into an arbitrary shape such as a ring shape, a polygonal shape, an elliptical shape.
- the tubular molded product 607 is continuously cut by the slicing blade 604 at equal intervals from the end face (FIG. 3C-E).
- a frame-like structure 501 having an arbitrary shape can be obtained (FIG. 3F).
- the top plate is not formed.
- a space 502 can be formed by the frame-like structure 501, the light-emitting element 503, and the substrate 504 (FIG. 3G).
- the filler 505 is filled while being extended by a squeegee 507 through a screen plate 506 having a predetermined shape.
- the filler contains a phosphor 508 for adjusting the function and characteristics of the light emitting device (FIG. 3H). In this way, the light emitting device 509 of this embodiment is obtained (FIG. 3I).
- Example 1 A product name “YR450” (yellow phosphor) manufactured by Intermatix was uniformly mixed with 10% by mass of silicone rubber “FSG3161K2C” manufactured by Fuji Polymer Industries Co., Ltd. This blend was compression-molded at 150 ° C. for 5 minutes using a compression mold to obtain a rectangular parallelepiped frame-like structure having one surface (bottom surface) opened.
- the inner dimensions were 4 mm in length, 4 mm in width, 1 mm in height, and the outer dimensions were 4.75 mm in length, 4.75 mm in width, and 1.75 mm in height.
- the thickness (coating thickness) of the frame-shaped structure was 0.75 mm.
- a through hole having a diameter of 0.3 mm was provided on one of the four sides of the outer periphery.
- the frame-like structure is arranged in the center.
- thermosetting silicone, OE-6351 product name, manufactured by Toray Dow Corning Co., Ltd.
- a hemispherical lens-like structure having a sphere radius of R8 mm was directly molded on the substrate using a transfer mold.
- the material was thermosetting silicone, FSG3161K2C (manufactured by Fuji Polymer Industries Co., Ltd.), and the molding condition was 150 ° C. for 5 minutes.
- the obtained light-emitting device was as shown in FIG. 1, and a light-emitting element with high uniformity of the phosphor layer and a light-emitting element with high mass productivity could be obtained. Further, the light emitting element that achieves desired light emission characteristics can be obtained without the size and concentration being changed during processing.
- Example 2 A light emitting device was produced in the same manner as in Example 1 except that the phosphor concentration and the coating thickness of the frame-like structure were changed to Table 1 below. The obtained light emitting device was caused to emit light in the same manner as in Example 1, and the color temperature was measured. These conditions and results are shown in Table 1.
- the phosphor concentration of the frame-like structure is preferably 5 to 20% by mass.
- Comparative Example 1 As a comparative example, a rectangular parallelepiped frame-like structure not blended with a phosphor was molded as in the prior art, and a filler blended with a phosphor was injected and cured after an arbitrary time after blending. . The obtained light emitting device was caused to emit light in the same manner as in Example 1, and the color temperature was measured. These conditions and results are shown in Table 2 together with the results of Example 1.
- the light emitting device of Example 1 had a substantially uniform color temperature regardless of the elapsed time, but the color temperature of the light emitting device of Comparative Example 1 fluctuated with the elapsed time. This is because the phosphor blended in the filler settles and the concentration of the phosphor contained in the filler to be injected increases.
- the method for manufacturing a light emitting device and the light emitting device of the present invention can be used for a light source such as an illumination, a display and a backlight.
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Abstract
Description
本発明は半導体発光素子が蛍光体を含有する樹脂性の枠状構造体で覆われた発光装置とその製造方法に関する。 The present invention relates to a light emitting device in which a semiconductor light emitting element is covered with a resinous frame-like structure containing a phosphor, and a method for manufacturing the same.
従来の発光装置は、発光素子を基板に配置しその発光素子の周囲を蛍光体を含む封止樹脂で覆われている構造のものが多くある。発光素子から発する光により蛍光体が励起し異なる波長の光を発生させることにより目的の波長の光を得る技術が採用されている。 Many conventional light emitting devices have a structure in which a light emitting element is arranged on a substrate and the periphery of the light emitting element is covered with a sealing resin containing a phosphor. A technique is adopted in which a phosphor is excited by light emitted from a light emitting element to generate light having a different wavelength by generating light having a different wavelength.
多くの場合、蛍光体は透光性樹脂に混合され、発光素子の周辺に充填又は塗布或いは被覆後に硬化させている。特許文献1のポッティング方法、特許文献2のディッピング方法、特許文献3のスクリーン印刷方法、特許文献4の方法、特許文献5の金型成型方法など様々な製造方法が提案されている。
In many cases, the phosphor is mixed with a translucent resin, and is hardened after filling, coating, or coating around the light emitting element. Various manufacturing methods such as the potting method of
図4Aは下記特許文献1に開示されている従来の樹脂封止式の形成方法を示す概略断面図である。発光装置100は基板101上の電極109に発光素子102が実装され、さらに蛍光体103を含む被覆材で覆われている。その発光素子の実装方法の一例としては蛍光体103を含む被覆材104を滴下装置108の細管107を通して吐出しキャビティ106内に滴下した後、被覆材104を硬化させ、発光素子102は蛍光体103を含む被覆材104で覆われる。
FIG. 4A is a schematic cross-sectional view showing a conventional resin-sealed formation method disclosed in
しかし、前記の樹脂封止式の形成方法によれば被覆材104に蛍光体103をあらかじめ混合したポッティング材を滴下する方法は、被覆材が固化する際、被覆材の表面張力や粘度により形状が変形するため、寸法精度がよくないばかりか、図4Bに示すように壁面や液面での形状不安定や、図4Cのように製造工程で傾きが生じることもある。いずれの場合でも、発光素子上を覆った被覆材104の厚さが変化してしまい、製品不良に直結することになる。
However, according to the resin-sealed formation method, the method of dropping the potting material in which the
ポッティング加工を開始すると同時に、被覆材中の蛍光体はそれぞれの比重差が有るので、シリンジ内で序所に沈殿しポッティング材配合物中の蛍光体濃度の不均衡を生じる。図4Aを例にすると、シリンジ108内の被覆材104に含まれる蛍光体103は時間とともに沈降し細管107付近に多く存在するようになる。反面シリンジ上方では希薄となる。こうして、被覆材中の蛍光体濃度は吐出作業開始当初は設定通りであっても、生産時間の経過で徐々に変化し、ある段階を越すと逆にさらに希薄になる。蛍光体の沈降は滴下後、硬化前のキャビィティ106に於いても起こる。従って、発光体の周囲に蛍光体が均一に被覆されないばかりでなく、最終的な製品毎の発光ばらつきにおいて大変大きなものとなる。こうしてできた発光装置は、蛍光体量のムラにより配光色度が一様でないため場合、特に不具合となる。
At the same time when the potting process is started, the phosphors in the coating material have different specific gravities. Therefore, the phosphors are precipitated at the beginning in the syringe, resulting in an imbalance in the phosphor concentration in the potting material composition. Taking FIG. 4A as an example, the
蛍光体を含む被覆材の被覆厚さのバラツキを抑制する手段として図5A-Bに示すようなスクリーン印刷方法が知られている(特許文献3)。発光装置200に実装された発光素子201の周囲は蛍光体202を含有した被覆層207で覆われている。蛍光体202を含有した被覆材203は所定の形状に開口したキャビティ206をもつスクリーンメタルマスク204の上面に供給され、さらにスキージ205で延ばしながらキャビティ206に充填される。こうして充填された被覆材を硬化させて、発光素子201の周囲に被覆層207を所定の厚さで形成することができるとされる。
A screen printing method as shown in FIGS. 5A and 5B is known as means for suppressing variations in coating thickness of a coating material containing a phosphor (Patent Document 3). The periphery of the
しかし、スクリーン印刷方法では依然加工中に蛍光体が配合された被覆材に蛍光体濃度の不均衡が生じることは避けられない。また、スクリーンメタルマスクを発光素子の位置に対して精度よく設置することは難しく、厚さ精度の上昇の反面、位置精度の低下を招く。また、多数の発光素子に一度に塗布することも困難であるという問題がある。 However, in the screen printing method, it is inevitable that an imbalance of the phosphor concentration occurs in the coating material containing the phosphor during processing. In addition, it is difficult to place the screen metal mask accurately with respect to the position of the light-emitting element, which causes an increase in thickness accuracy but a decrease in position accuracy. In addition, there is a problem that it is difficult to apply a large number of light emitting elements at once.
金型成型方法は、他の手段より厚さ、位置、寸法、濃度などの精度を高くすることができる。図6A-Cはトランスファー成型による被覆方法を示す概略図である(特許文献5)。トランスファー成型金型300は3枚の構造からなっている。下型301には基板を挿入するキャビティ302が設けられている。中型303の下側には被覆層を成型する為のキャビティ304がある。又中型の上側には材料を仕込むためのポット306があり、上型305はポット306に仕込んだ材料を加圧注入する構造となっている。発光素子310を実装した基板311は下型301のキャビティ302に収められる。発光素子310と基板311と電極307ならびに中型303の下側にあるキャビティ304で形成された空間が蛍光体層の形状となる。蛍光体312を含んだ被覆材313は中型303の上側にあるポット306に適量仕込まれる。上型305で加圧することにより、被覆材313は注入口314からランナー315を通りゲート316を介してキャビティ304へと注入される。適切な時間と温度で加圧を保持し被覆材を硬化させた後金型から取り出す。
The mold molding method can increase the accuracy of thickness, position, dimensions, concentration, etc., compared to other means. 6A to 6C are schematic views showing a coating method by transfer molding (Patent Document 5). The transfer molding die 300 has a three-sheet structure. The
しかしこの方法は、注入口、ランナー、ポットなどの製品以外の部分で多くのスクラップ材料が発生する。蛍光体は極めて高価であるため経済的な視点から大きな問題がある、さらにこの方法は大量に短時間で成型するには限界があるという問題がある。 However, this method generates a lot of scrap material in parts other than the product such as the inlet, runner, and pot. Since the phosphor is extremely expensive, there is a big problem from an economical point of view. Further, this method has a problem that there is a limit to molding a large amount in a short time.
本発明は、前記従来の問題を解決するため、蛍光体層の均一性が高く量産性の高い発光装置及びその製造方法を提供する。 In order to solve the above-described conventional problems, the present invention provides a light-emitting device with high uniformity of a phosphor layer and high productivity, and a method for manufacturing the same.
本発明の発光装置は、基板に半導体発光素子が搭載された発光装置であって、前記発光素子は蛍光体を含有する樹脂製の枠状構造体で覆われ、前記発光素子と前記枠状構造体との空間に透光性樹脂材料が充填されていることを特徴とする。 The light-emitting device of the present invention is a light-emitting device in which a semiconductor light-emitting element is mounted on a substrate, and the light-emitting element is covered with a resin frame-like structure containing a phosphor, and the light-emitting element and the frame-like structure The space with the body is filled with a translucent resin material.
本発明の発光装置の製造方法は、基板に半導体発光素子が搭載された発光装置の製造方法であって、前記発光素子を基板に搭載した後、蛍光体を含有する樹脂製の枠状構造体で前記発光体素子を覆い、前記発光素子と前記枠状構造体との空間に透光性樹脂材料を充填したことを特徴とする。 A method for manufacturing a light emitting device according to the present invention is a method for manufacturing a light emitting device in which a semiconductor light emitting element is mounted on a substrate, and after the light emitting element is mounted on a substrate, a resin frame-like structure containing a phosphor The light emitting element is covered, and a space between the light emitting element and the frame structure is filled with a translucent resin material.
本発明は、あらかじめ所定の寸法、濃度で形成された蛍光体が含有された枠体を基板上の半導体発光素子の上に配置することで、蛍光体層の均一が高い発光素子及び量産性の高い発光素子とすることができる。また本発明は、蛍光体組成物はすでに所定の形状に成型された枠状の構造体となっているため、寸法及び濃度が加工中に変動することはなく所望の光放射特性を実現する発光素子を提供することができる。さらに、製品毎の配光色度が一様となるので、従来方法に付きまとう、最終製品での選定、選別の要がなくなるので工数の低下、歩留まりの低下を良好に抑制することができる。加えて、蛍光体が配合された透光性樹脂をあらかじめ構造体に形成させているので、基板上で形成させる他の製造方法と比べ、格段に向上された寸法精度を得ることができる。その結果、製品の品質だけではなく機能も上昇するので、難易度の高い光学設計を成し得る。また、透光性樹脂を充填する空間は構造体により形成されるので、従来方法と比較すると製造コストが抑えられ且つ設計変更にも対応しやすい。 In the present invention, a phosphor containing a phosphor formed in a predetermined size and concentration in advance is disposed on a semiconductor light emitting device on a substrate, so that a phosphor layer with high uniformity and a mass-productive device can be obtained. A high light-emitting element can be obtained. Further, according to the present invention, since the phosphor composition is a frame-like structure that is already molded into a predetermined shape, the light emission that realizes the desired light emission characteristics without changing the size and concentration during processing. An element can be provided. Furthermore, since the light distribution chromaticity for each product becomes uniform, there is no need for selection and selection in the final product as in the conventional method, so that the reduction in man-hours and the yield can be satisfactorily suppressed. In addition, since the translucent resin in which the phosphor is blended is formed in the structure in advance, it is possible to obtain much improved dimensional accuracy compared to other manufacturing methods formed on the substrate. As a result, not only the quality of the product but also the function is improved, so that an optical design with a high degree of difficulty can be achieved. In addition, since the space filled with the translucent resin is formed by a structure, the manufacturing cost can be suppressed and the design can be easily changed as compared with the conventional method.
本発明の発光装置は、基板に半導体発光素子を搭載し、その外側に蛍光体を含有する樹脂製の枠状構造体で覆い、前記発光素子と前記枠状構造体との空間に透光性樹脂材料を充填している。 The light-emitting device of the present invention includes a semiconductor light-emitting element mounted on a substrate, covered with a resin-made frame-like structure containing a phosphor on the outside thereof, and light-transmitting in the space between the light-emitting element and the frame-like structure. Filled with resin material.
前記蛍光体を含有する樹脂製の枠状構造体は、有機系及び/又は無機系の蛍光体、及び光散乱剤を含むことが好ましい。 The resin-like frame-like structure containing the phosphor preferably contains an organic and / or inorganic phosphor and a light scattering agent.
また、前記枠状構造体を構成する樹脂及び/又は前記透光性樹脂材料は、シリコーン系ゴム又はゲルであることが好ましい。シリコーン系ゴム又はゲルは耐熱性が高い利点がある。さらに透光性樹脂材料の硬化時の歪はシリコーン系ゴム又はゲルの枠状構造体により吸収され、均一な充填層が形成できる。 Moreover, it is preferable that the resin and / or the translucent resin material constituting the frame-like structure is silicone rubber or gel. Silicone rubber or gel has the advantage of high heat resistance. Furthermore, the strain at the time of curing of the translucent resin material is absorbed by the frame structure of silicone rubber or gel, so that a uniform filling layer can be formed.
前記枠状構造体の外側には、さらにレンズを配置するのが好ましい。これにより、光の指向性を制御できる。 It is preferable that a lens is further arranged outside the frame-like structure. Thereby, the directivity of light can be controlled.
このレンズも耐熱性が高いことからシリコーン系ゴム又はレジンであることが好ましい。 Since this lens also has high heat resistance, silicone rubber or resin is preferable.
前記枠状構造体は、前記発光体素子を覆う形状に予め成形しておくのが好ましい。 It is preferable that the frame-like structure is formed in advance so as to cover the light emitting element.
本発明の好ましい一例は、あらかじめ所定の濃度に蛍光体を含有し、かつ所定の形状に成型された枠状の構造体を、基板上の発光素子の近傍に配置し、発光素子と基板ならびに枠状構造体で形成された空間に透光性樹脂を充填した後これを硬化させることである。 In a preferred example of the present invention, a frame-like structure that contains a phosphor in a predetermined concentration and is molded into a predetermined shape is disposed in the vicinity of the light-emitting element on the substrate. And filling the space formed by the structure with a translucent resin and then curing it.
また、蛍光体を含有する枠状構造体の空間に充填する透光性樹脂に蛍光体を配合させてもよい。 Alternatively, the phosphor may be blended with a translucent resin that fills the space of the frame-like structure containing the phosphor.
(実施形態1)
本発明の第一の実施形態について図1A-B~図2A-Cに基づいて説明する。
(Embodiment 1)
A first embodiment of the present invention will be described with reference to FIGS. 1A-B to 2A-C.
図1Aは本実施形態に係わる半導体発光装置を模式的に示す断面図、図1Bは同平面図、図2A-Cは同実施形態の製造工程を示す断面図である。発光装置400の基板401には所定の導電回路をもつリード電極402が形成されている。基板401又はリード電極402の上には発光素子403が配置され、さらに発光素子403の表面とリード電極402は金属細線404により電気的に接続されている。発光素子403の周囲は蛍光体408を含有した枠状構造体405が配置され、枠状構造体405と発光素子403並びに基板401で形成された空間に透光性樹脂406が充填されている。またその外装にはレンズ形状の構造体407が装着されている。
1A is a sectional view schematically showing a semiconductor light emitting device according to the present embodiment, FIG. 1B is a plan view thereof, and FIGS. 2A to 2C are sectional views showing manufacturing steps of the embodiment. A
発光素子403の基板401への装着は、例えばダイボンダーマシンを使用して行い、基板上のリード電極402との接続は金属細線404でワイヤーボンディングすることで行う。
The
基板401の材質は限定されないが、ガラスエポキシ、ポリイミド、エポキシ樹脂含浸アラミド不織布、セラミック等のプリント基板なら良好に使用することができる。近年の発光装置は発熱量も多くなりより効果的な放熱が必要であるので、セラミックを基板としたセラミックス基板やアルミニウム基板に代表される金属基板やアルミナ等の金属酸化物を応用した基板などを使用する事が望ましいがこれに制約されるものではない。
The material of the
発光素子403の種類は特に限定されないが、例えばサファイアで形成された素子基板にIII族窒化物系化合物すなわちGaN系、AlGaN系、InGaN系、InAlGa系などからなる半導体層が積層されている。素子基板は他にSiC、GaPなどが使用できるがこれらに制約されるものではない。
The type of the
発光素子403の発する波長は紫外領域から可視領域までさまざまであるが、目的に合わせて任意に選択される。例えば青色、赤色、緑色など所望する発光色を選択する。同系の発光色の素子を複数用いることもできる。また、異なる発光色の発光素子を組み合わせて、様々な発光色を得ることができる。
The wavelength emitted by the
基板、発光素子の寸法は特に限定されるものではない。また、枠状構造体の寸法も、基板に搭載された発光素子の寸法並びに数量により設定される。ただし、枠状構造体の内面周囲および天板内面面で形成される空間部(図1の充填材406の部分)は、発光素子に結合されている金属細線404と干渉しない程度に発光素子より大きくする必要がある。好ましくは、発光素子の外周より0.2~1.0mm程度大きくする。発光素子の周囲と枠状構造体周囲の内面との間隔、及び発光素子の上面と枠状構造体の天板の内面との間隔は等しくするのが望ましい。また、枠状構造体の厚さは、蛍光体の配合量、発光色などにより調整され0.2~2.0mmが好ましい。0.2mm未満の厚さでは形態維持が困難になり、2.0mmを超える厚さでは発光効率が悪くなる傾向となる。高さは0.5~3mmが好ましい。
The dimensions of the substrate and the light emitting element are not particularly limited. Further, the dimensions of the frame-like structure are also set by the dimensions and quantity of the light emitting elements mounted on the substrate. However, the space formed by the periphery of the inner surface of the frame-like structure and the inner surface of the top plate (the portion of the
枠状構造体の形態は、単一の発光素子の周囲を均一に覆うためには枡状がよいが、複数の発光素子を同時に覆う場合、その発光素子の配置により適正な形状が選択され、円、多角形、楕円などでもよい。また、光学設計により、半球状、非球面のレンズ状の形態にしてもよい。 The shape of the frame-shaped structure is preferably a bowl to uniformly cover the periphery of a single light emitting element, but when simultaneously covering a plurality of light emitting elements, an appropriate shape is selected depending on the arrangement of the light emitting elements, A circle, a polygon, an ellipse, etc. may be sufficient. Further, depending on the optical design, a hemispherical or aspherical lens shape may be used.
レンズ状構造体の形状は、所望する発光装置から発する光の指向性により調整される。集光、拡散など目的によって凹、凸、フレネル、球面、非球面など任意の形態にする。また、個々の発光素子毎に発光素子とほぼ等しい径のレンズを複数設置してもいいし、複数の発光素子を単一レンズで同時に覆ってもよい。 The shape of the lenticular structure is adjusted by the directivity of light emitted from the desired light emitting device. Depending on the purpose of light collection, diffusion, etc., any shape such as concave, convex, Fresnel, spherical, aspherical surface is used. In addition, a plurality of lenses having a diameter substantially equal to that of the light emitting elements may be provided for each individual light emitting element, or the plurality of light emitting elements may be simultaneously covered with a single lens.
図2Aに示すように、基板401上には発光素子403を搭載し接続するための電極402並びに発光装置を接続するための金属細線404が形成されている。電極は銅、リン青銅、鉄、ニッケルなどの電気良導体が用いられ、表面に金、銀、白金、パラジウム等の貴金属メッキを施すこともできる。
As shown in FIG. 2A, an
発光素子403は蛍光体で覆う必要がある。図2Bに示すように、発光素子403の近傍に、蛍光体408を含有した被覆材410をあらかじめ成型した枠状構造体405を配置する。次いで、枠状構造体405と発光素子403、基板401で形成された空間411に充填材406が注入口409から充填される。
The
蛍光体408は、発光素子403の発する発光色と所望する発光装置の発光色により選択される。例えば、ピーク波長が0.45μm付近の青色の発光素子に、その光を受けてピーク波長0.57μm付近に発光する蛍光体から発する光を混合させて白色光を得ることができる。
The
蛍光体408の種類と量は特に限定されず、有機系、無機系を問わず粒子状の蛍光体を用いることができる。主にはYAG(イットリウム・アルミニウム・ガーネット)系蛍光体、BOS(バリウム・オルトーシリケート)系蛍光体、TAG(テルビウム・アルミニウム・ガーネット)系蛍光体があり、発光素子と同様目的に合わせて紫外、赤色系、青色系、黄色系、緑系の光を発するものの中から一種ないし複数種を組み合わせて選択される。被覆材に配合する蛍光体の量は、所望する発光色により分量を調節する。一例として、被覆材100質量%に対して蛍光体5~20質量%の範囲で添加する。
The kind and amount of the
また、枠状構造体405には、蛍光体のほかに指向性を調整する目的で適量の光散乱材を配合することもできる。光散乱材には酸化チタン、酸化アルミニウム、酸化ケイ素などがある。
In addition to the phosphor, an appropriate amount of light scattering material can be blended with the
枠状構造体405を構成する被覆材410並びに枠状構造体405と発光素子403、基板401で形成された空間411に充填する充填材406、透光性を有する樹脂状組成物から選択される。ここで、透光性樹脂材料とは、厚さ2mmのシート又は板において、波長580nmの光を透過させたときの透過度が90%以上の樹脂を言う。
The covering
この樹脂状組成物は熱可塑性でも熱硬化性でも選択可能で、アクリル、ポリカーボネート、ウレタン、メタクリル酸系、メタクリル酸エステル系、シリコーンなどが使用できる。また、樹脂に限らずゴム状、及びゲル状のものでもよい。光透過性、耐熱性とともに紫外線に対する耐性等が優れることから、シリコーン系であることが望ましい。また、温度変化による応力を緩和する点から、硬化後の性状がゴム又はゲル状であることが望ましい。また、枠状構造体405を構成する被覆材410並びに枠状構造体405と発光素子403、基板401で形成された空間411に充填する充填材406は必ずしも同一でなくでもよい。
This resinous composition can be selected from thermoplastic and thermosetting, and acrylic, polycarbonate, urethane, methacrylic acid, methacrylic acid ester, silicone and the like can be used. Moreover, not only resin but rubber | gum shape and a gel-like thing may be sufficient. A silicone type is desirable because of its excellent light transmittance and heat resistance as well as resistance to ultraviolet rays. Moreover, from the point of relieving stress due to temperature change, it is desirable that the property after curing is rubber or gel. Further, the covering
枠状構造体405はコンプレッション成型によって成型されている。コンプレッション成型はトランスファー成型、インジェクション成型と比較して成型スクラップの発生は少なく、また一度に多数の成型品を得ることができる。他に、シート状に圧延し打抜く或いはカットして得る方法、押し出し成型したものをスライスして得る方法であってもよい。またこれらの複合で成型してもよいし、同一あるいは別々の方法で得られた複数部品を組み合わせても良い。
The
枠状構造体405は基板401にシリコーン系加圧接着剤で固定されているのが好ましい。もちろん他の接着剤などで貼り付けてもよいし、もともとの枠状構造体の素材が有しているタック性を利用しても良い。また、直接基板上に一体成型してもよい。
The frame-
充填材406の充填は一例としてシリンジにより注入したが、枠状構造体の形状によって、ポッティング、スクリーン印刷、ナイフコートなどすでに公知である従来技術を利用しても良い。
The filling
図2Cに示すように、さらに指向性を制御するために、レンズ状構造体407を設置することができる。レンズ状構造体407はシリコーンゴム又はシリコーンレジンで成型するのが好ましい。レンズ状構造体407は基板401上に直接金型成型できる。また、コンプレッション、トランスファー、インジェクションといった従来からの金型成型によってあらかじめ得られたレンズ状構造体を、粘着剤、接着剤などで基板の上に貼り付けてもよいし、機械的なはめあわせ構造などで固定しても良い。
As shown in FIG. 2C, a lens-
レンズ状構造体407の性状は、ガラス、樹脂、ゴム、いずれでもよいが、光透過性、耐熱性とともに紫外線に対する耐性などが優れることと価格を考え、シリコーン系の材質であることが望ましい。
The property of the lens-
(実施の形態2)
第二の実施形態を図3A-Iに基づいて説明する。枠状構造体は、蛍光体601を含有した被覆材602を押し出し成型機600により押し出し成型して得る。被覆材602は押し出し成型機600のシリンダーに充填され、さらにスクリューを回転させて加圧される。加圧された被覆材602は口金603から押し出され(図3A)、次いで加熱硬化させチューブ状成型品607が得られる(図3B)。押し出し成型は短時間で完了させることができるだけでなく、常にスクリューの回転により被覆材602は攪拌された状態であるため、極めて均質に蛍光体を含むチューブ状成型品607が連続的に得られる。
(Embodiment 2)
A second embodiment will be described with reference to FIGS. 3A-I. The frame-like structure is obtained by extruding the covering
また、口金603を変える事により輪状、多角形状、楕円状などの任意な形状にできる。チューブ状成型品607は端面から等間隔で連続的にスライス刃604にて押切られる(図3C-E)。こうして、任意の形状の枠状構造体501を得ることができる(図3F)。この例では、天板は形成していない。
Also, by changing the
こうして得られた枠状構造体501を基板504と電極510を含む発光装置上に配置すると、枠状構造体501、発光素子503と基板504で空間502を形成することができる(図3G)。充填材505は所定の形状に開口したスクリーン版506を介してスキージ507で延ばしながら充填される。また、充填材には発光装置の機能と特性調整のため、蛍光体508を含有している(図3H)。このようにして本実施形態の発光装置509を得る(図3I)。
When the frame-
以下実施例を用いて本発明をさらに具体的に説明する。
(実施例1)
富士高分子工業社製シリコーンゴム「FSG3161K2C」に、Intermatix社製商品名「YR450」(黄色の蛍光体)を10質量%均一に配合した。この配合物をコンプレッション金型を用い、150℃で5分間圧縮成形し、一面(底面)が開放された直方体の枠状構造体を得た。内寸法は縦4mm、横4mm、高さ1mm、外寸法は縦4.75mm、横4.75mm、高さ1.75mmとした。枠状構造体の厚さ(被覆厚さ)は0.75mmであった。また外周4辺のうちの一辺の面には直径0.3mmの貫通穴を設けた。縦1.2mm、横1.2mm、高さ0.3mmの発光素子(発光色は450nm付近の青色のもの)が1.5mmのピッチで2×2個、合計4個搭載された基板の概略中央に前記枠状構造体を配置した。次いで、熱硬化シリコーン、OE-6351(製品名、東レダウコーニング株式会社製)を0.3mmの貫通穴からシリンジを使い充填し、150℃で120分間加熱し硬化させた。その後、トランスファー金型を用い、球半径R8mmの半球状のレンズ状構造体を基板上に直接成型した。材料は熱硬化性シリコーン、FSG3161K2C(富士高分子工業株式会社製)、成型条件は150℃で5分間とした。得られた発光装置は図1に示すとおりであり、蛍光体層の均一性が高い発光素子及び量産性の高い発光素子とすることができた。さらに、寸法及び濃度が加工中に変動することはなく所望の光放射特性を実現する発光素子とすることができた。
Hereinafter, the present invention will be described more specifically with reference to examples.
Example 1
A product name “YR450” (yellow phosphor) manufactured by Intermatix was uniformly mixed with 10% by mass of silicone rubber “FSG3161K2C” manufactured by Fuji Polymer Industries Co., Ltd. This blend was compression-molded at 150 ° C. for 5 minutes using a compression mold to obtain a rectangular parallelepiped frame-like structure having one surface (bottom surface) opened. The inner dimensions were 4 mm in length, 4 mm in width, 1 mm in height, and the outer dimensions were 4.75 mm in length, 4.75 mm in width, and 1.75 mm in height. The thickness (coating thickness) of the frame-shaped structure was 0.75 mm. Further, a through hole having a diameter of 0.3 mm was provided on one of the four sides of the outer periphery. Outline of a substrate on which a total of four light-emitting elements having a length of 1.2 mm, a width of 1.2 mm, and a height of 0.3 mm (light emission color is blue at around 450 nm) at a pitch of 1.5 mm, a total of four. The frame-like structure is arranged in the center. Next, thermosetting silicone, OE-6351 (product name, manufactured by Toray Dow Corning Co., Ltd.) was filled from a 0.3 mm through-hole using a syringe and heated at 150 ° C. for 120 minutes to be cured. Thereafter, a hemispherical lens-like structure having a sphere radius of R8 mm was directly molded on the substrate using a transfer mold. The material was thermosetting silicone, FSG3161K2C (manufactured by Fuji Polymer Industries Co., Ltd.), and the molding condition was 150 ° C. for 5 minutes. The obtained light-emitting device was as shown in FIG. 1, and a light-emitting element with high uniformity of the phosphor layer and a light-emitting element with high mass productivity could be obtained. Further, the light emitting element that achieves desired light emission characteristics can be obtained without the size and concentration being changed during processing.
得られた発光装置に電流を流し、コニカミノルタ製CA-2000で色温度を測定した。100mAの電流を流したところ、色温度4100K、色座標X0.4、Y0.45の白色光を得た。また、前記シリコーンゴム「FSG3161K2C」の厚さ2mmのシート又は板に波長580nmの光を透過させたときの透過率は93%であった。 Current was passed through the obtained light emitting device, and the color temperature was measured with CA-2000 manufactured by Konica Minolta. When a current of 100 mA was passed, white light having a color temperature of 4100K and color coordinates of X0.4 and Y0.45 was obtained. Further, the transmittance when light having a wavelength of 580 nm was transmitted through a 2 mm thick sheet or plate of the silicone rubber “FSG3161K2C” was 93%.
(実施例2)
枠状構造体の蛍光体濃度と被覆厚さを下記の表1とした以外は実施例1と同様に発光装置を作製した。得られた発光装置を実施例1と同じ方法で発光させ、色温度を測定した。これらの条件と結果を表1に示す。
(Example 2)
A light emitting device was produced in the same manner as in Example 1 except that the phosphor concentration and the coating thickness of the frame-like structure were changed to Table 1 below. The obtained light emitting device was caused to emit light in the same manner as in Example 1, and the color temperature was measured. These conditions and results are shown in Table 1.
蛍光体濃度が低いときは蛍光体含有層の厚さを厚くする必要がある。この結果、材料を多く消費し、発光効率は悪くなる傾向となった。また、蛍光体濃度が高いと色温度が低くなり、蛍光体含有層の厚さは少なくでき、材料は少なくて済むことがわかった。しかし、あまり薄くすると強度が低下するうえ、蛍光体の効率は濃度を高くするに従い鈍化することが解った。以上から枠状構造体の蛍光体濃度は5~20質量%が好ましいことがわかった。 When the phosphor concentration is low, it is necessary to increase the thickness of the phosphor-containing layer. As a result, a large amount of material was consumed, and the luminous efficiency tended to deteriorate. Further, it was found that when the phosphor concentration is high, the color temperature is lowered, the thickness of the phosphor-containing layer can be reduced, and the material can be reduced. However, it has been found that if the thickness is too low, the strength decreases and the efficiency of the phosphor decreases as the concentration increases. From the above, it was found that the phosphor concentration of the frame-like structure is preferably 5 to 20% by mass.
(比較例1)
比較例として従来技術のように、蛍光体を配合していない直方体の枠状構造体を成型し、蛍光体を配合した充填剤を、配合後任意の時間経過してから注入し、硬化させた。得られた発光装置を実施例1と同じ方法で発光させ、色温度を測定した。これらの条件と結果を実施例1の結果とともに表2に示す。
(Comparative Example 1)
As a comparative example, a rectangular parallelepiped frame-like structure not blended with a phosphor was molded as in the prior art, and a filler blended with a phosphor was injected and cured after an arbitrary time after blending. . The obtained light emitting device was caused to emit light in the same manner as in Example 1, and the color temperature was measured. These conditions and results are shown in Table 2 together with the results of Example 1.
表2から明らかなとおり、実施例1の発光装置は経過時間によらずほぼ一様の色温度であったが、比較例1の発光装置は、経過時間とともに色温度が変動した。充填剤に配合された蛍光体が沈降し、注入する充填剤に含有される蛍光体濃度が濃くなったためである。 As apparent from Table 2, the light emitting device of Example 1 had a substantially uniform color temperature regardless of the elapsed time, but the color temperature of the light emitting device of Comparative Example 1 fluctuated with the elapsed time. This is because the phosphor blended in the filler settles and the concentration of the phosphor contained in the filler to be injected increases.
本発明の発光装置の製造方法及び発光装置は照明、ディスプレイ、バックライト等の光源に利用できる。 The method for manufacturing a light emitting device and the light emitting device of the present invention can be used for a light source such as an illumination, a display and a backlight.
100,200,400,509 発光装置
101,311,401,504 基板
102,201,310,403,503 発光素子
103,202,312,408,508,601 蛍光体
104,203,313,410,602 被覆材
106,206 キャビティ
107 細管
108 シリンジ
204 メタルマスク
205,507 スキージ
207 被覆層
300 成型金型
301 下型
302 基板を挿入するキャビティ
303 中型
304 被覆層を成型する為のキャビティ
305 上型
306 ポット
314 注入口
315 ランナー
316 ゲート
109,307,402,510 電極
404 金属細線
405,501 枠状構造体
406,505 充填材(透光性樹脂材料)
407 レンズ状構造体
409 注入口
411,502 充填材を充填する空間
506 スクリーン版
600 押し出し成型機
603 口金
604 スライス刃
100, 200, 400, 509
407
Claims (16)
前記発光素子は蛍光体を含有する樹脂製の枠状構造体で覆われ、
前記発光素子と前記枠状構造体との空間に透光性樹脂材料が充填されていることを特徴とする発光装置。 A light emitting device having a semiconductor light emitting element mounted on a substrate,
The light emitting element is covered with a resin frame-like structure containing a phosphor,
A light-emitting device, wherein a space between the light-emitting element and the frame-shaped structure is filled with a translucent resin material.
前記発光素子を基板に搭載した後、
蛍光体を含有する樹脂製の枠状構造体で前記発光体素子を覆い、
前記発光素子と前記枠状構造体との空間に透光性樹脂材料を充填したことを特徴とする発光装置の製造方法。 A method of manufacturing a light emitting device in which a semiconductor light emitting element is mounted on a substrate,
After mounting the light emitting element on a substrate,
Covering the phosphor element with a resin frame structure containing a phosphor,
A method for manufacturing a light-emitting device, wherein a space between the light-emitting element and the frame-shaped structure is filled with a translucent resin material.
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| JP2010526590A JPWO2010023992A1 (en) | 2008-08-27 | 2009-04-23 | Light emitting device and manufacturing method thereof |
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| JPWO2010023992A1 (en) | 2012-01-26 |
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