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WO2010017160A3 - Environmentally friendly polymer stripping compositions - Google Patents

Environmentally friendly polymer stripping compositions Download PDF

Info

Publication number
WO2010017160A3
WO2010017160A3 PCT/US2009/052641 US2009052641W WO2010017160A3 WO 2010017160 A3 WO2010017160 A3 WO 2010017160A3 US 2009052641 W US2009052641 W US 2009052641W WO 2010017160 A3 WO2010017160 A3 WO 2010017160A3
Authority
WO
WIPO (PCT)
Prior art keywords
environmentally friendly
aqueous
stripping compositions
friendly polymer
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/052641
Other languages
French (fr)
Other versions
WO2010017160A2 (en
Inventor
Michael B. Korzenski
Lillian Tang (Ching-Hsuan)
Robert Hsu (Ming-Ann)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ATMI Taiwan Co Ltd
Advanced Technology Materials Inc
Original Assignee
ATMI Taiwan Co Ltd
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATMI Taiwan Co Ltd, Advanced Technology Materials Inc filed Critical ATMI Taiwan Co Ltd
Priority to CN2009801396802A priority Critical patent/CN102216854A/en
Publication of WO2010017160A2 publication Critical patent/WO2010017160A2/en
Publication of WO2010017160A3 publication Critical patent/WO2010017160A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

Non-aqueous and semi-aqueous removal compositions for removing resist and/or other materials from microelectronic devices. The non-aqueous removal composition includes tetrahydrofurfuryl alcohol and at least one dibasic ester. The semi-aqueous removal composition includes tetrahydrofurfuryl alcohol, at least one dibasic ester, at least one corrosion inhibitor, and no more than 30 wt% water. The removal compositions effectively removes resist and/or other materials while not damaging the underlying low-k dielectric or metallic materials.
PCT/US2009/052641 2008-08-04 2009-08-04 Environmentally friendly polymer stripping compositions Ceased WO2010017160A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009801396802A CN102216854A (en) 2008-08-04 2009-08-04 Environmentally friendly polymer stripping compositions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8597208P 2008-08-04 2008-08-04
US61/085,972 2008-08-04

Publications (2)

Publication Number Publication Date
WO2010017160A2 WO2010017160A2 (en) 2010-02-11
WO2010017160A3 true WO2010017160A3 (en) 2010-05-06

Family

ID=41664157

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/052641 Ceased WO2010017160A2 (en) 2008-08-04 2009-08-04 Environmentally friendly polymer stripping compositions

Country Status (3)

Country Link
CN (1) CN102216854A (en)
TW (1) TW201013338A (en)
WO (1) WO2010017160A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102289159A (en) * 2010-06-18 2011-12-21 拉姆科技有限公司 Composition for removing photoresist and method for forming semiconductor pattern by using the same
JP2013533631A (en) 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Aqueous cleaning agent to remove residues after etching
JP6101421B2 (en) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド Etching solution for copper or copper alloy
KR20130099948A (en) 2010-08-20 2013-09-06 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Sustainable process for reclaiming precious metals and base metals from e-waste
KR101891363B1 (en) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. Composition for and method of suppressing titanium nitride corrosion
DE102011000322A1 (en) * 2011-01-25 2012-07-26 saperatec GmbH Separating medium, method and system for separating multilayer systems
JP5933950B2 (en) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Etching solution for copper or copper alloy
CN102411269A (en) * 2011-11-18 2012-04-11 西安东旺精细化学有限公司 Stripping liquid composition for photoresist film
WO2013101907A1 (en) 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
KR102105381B1 (en) 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. Post-cmp removal using compositions and method of use
EP2850495A4 (en) 2012-05-18 2016-01-20 Entegris Inc Composition and process for stripping photoresist from a surface including titanium nitride
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
CN103076725A (en) * 2013-01-31 2013-05-01 北京七星华创电子股份有限公司 Solution for removing photoresist and application of solution
WO2014138064A1 (en) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
JP6723152B2 (en) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド Compositions and methods for selectively etching titanium nitride
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (en) 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 Use of non-oxidizing strong acids for the removal of ion-implanted resist
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (en) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
US11091727B2 (en) * 2018-07-24 2021-08-17 Versum Materials Us, Llc Post etch residue cleaning compositions and methods of using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
WO1997003381A1 (en) * 1995-07-07 1997-01-30 Olin Microelectronic Chemicals, Inc. Non-corrosive photoresist stripper composition
US5909744A (en) * 1996-01-30 1999-06-08 Silicon Valley Chemlabs, Inc. Dibasic ester stripping composition
WO2004030038A2 (en) * 2002-09-26 2004-04-08 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545353A (en) * 1995-05-08 1996-08-13 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
KR101251594B1 (en) * 2006-03-23 2013-04-08 주식회사 동진쎄미켐 Chemical rinse composition for removing resist stripper

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
WO1997003381A1 (en) * 1995-07-07 1997-01-30 Olin Microelectronic Chemicals, Inc. Non-corrosive photoresist stripper composition
US5909744A (en) * 1996-01-30 1999-06-08 Silicon Valley Chemlabs, Inc. Dibasic ester stripping composition
WO2004030038A2 (en) * 2002-09-26 2004-04-08 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof

Also Published As

Publication number Publication date
WO2010017160A2 (en) 2010-02-11
CN102216854A (en) 2011-10-12
TW201013338A (en) 2010-04-01

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