[go: up one dir, main page]

WO2010095811A3 - 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법 - Google Patents

광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법 Download PDF

Info

Publication number
WO2010095811A3
WO2010095811A3 PCT/KR2009/007852 KR2009007852W WO2010095811A3 WO 2010095811 A3 WO2010095811 A3 WO 2010095811A3 KR 2009007852 W KR2009007852 W KR 2009007852W WO 2010095811 A3 WO2010095811 A3 WO 2010095811A3
Authority
WO
WIPO (PCT)
Prior art keywords
same
optical device
substrate
production method
device package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/007852
Other languages
English (en)
French (fr)
Other versions
WO2010095811A2 (ko
Inventor
남기명
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Point Engineering Co Ltd
Original Assignee
Point Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Point Engineering Co Ltd filed Critical Point Engineering Co Ltd
Priority to US13/146,337 priority Critical patent/US20110278624A1/en
Priority to CN2009801568141A priority patent/CN102318092A/zh
Priority to JP2011549055A priority patent/JP2012517697A/ja
Priority to EP09840487A priority patent/EP2400570A2/en
Publication of WO2010095811A2 publication Critical patent/WO2010095811A2/ko
Publication of WO2010095811A3 publication Critical patent/WO2010095811A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/183—Components mounted in and supported by recessed areas of the printed circuit board
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape

Landscapes

  • Led Device Packages (AREA)

Abstract

본 발명은 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법에 관한 것이다. 본 발명에 따른 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법은 금속 기판, 금속 기판의 표면에 형성되어 금속 기판을 절연시키는 제1 양극 산화막 및 제1 양극 산화막 위에 서로 절연되게 형성된 제1 및 제2 전극을 포함할 수 있다.
PCT/KR2009/007852 2009-02-17 2009-12-29 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법 Ceased WO2010095811A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/146,337 US20110278624A1 (en) 2009-02-17 2009-12-29 Substrate for an optical device, an optical device package comprising the same and a production method for the same
CN2009801568141A CN102318092A (zh) 2009-02-17 2009-12-29 用于光学器件的基板、包括该基板的光学器件封装及其制造方法
JP2011549055A JP2012517697A (ja) 2009-02-17 2009-12-29 光素子用基板、これを有する光素子パッケージおよびその製造方法
EP09840487A EP2400570A2 (en) 2009-02-17 2009-12-29 Substrate for an optical device, an optical device package comprising the same and a production method for the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090012728A KR101077264B1 (ko) 2009-02-17 2009-02-17 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법
KR10-2009-0012728 2009-02-17

Publications (2)

Publication Number Publication Date
WO2010095811A2 WO2010095811A2 (ko) 2010-08-26
WO2010095811A3 true WO2010095811A3 (ko) 2010-10-14

Family

ID=42634291

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/007852 Ceased WO2010095811A2 (ko) 2009-02-17 2009-12-29 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법

Country Status (6)

Country Link
US (1) US20110278624A1 (ko)
EP (1) EP2400570A2 (ko)
JP (1) JP2012517697A (ko)
KR (1) KR101077264B1 (ko)
CN (1) CN102318092A (ko)
WO (1) WO2010095811A2 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101055095B1 (ko) * 2010-03-09 2011-08-08 엘지이노텍 주식회사 발광장치
KR101121151B1 (ko) 2010-03-19 2012-03-20 주식회사 대원이노스트 Ｌｅｄ 모듈 및 그 제조 방법
EP2584621A4 (en) * 2010-06-15 2015-12-16 Furukawa Electric Co Ltd PCB FOR AN OPTICAL SEMICONDUCTOR COMPONENT, METHOD FOR PRODUCING THE PCB FOR AN OPTICAL SEMICONDUCTOR COMPONENT AND OPTICAL SEMICONDUCTOR COMPONENT
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
US8878215B2 (en) 2011-06-22 2014-11-04 Lg Innotek Co., Ltd. Light emitting device module
KR101846356B1 (ko) * 2011-07-29 2018-04-09 엘지이노텍 주식회사 광소자 패키지 및 그 제조 방법
JP6096413B2 (ja) * 2012-01-25 2017-03-15 新光電気工業株式会社 配線基板、発光装置及び配線基板の製造方法
US20160260880A1 (en) * 2012-11-27 2016-09-08 Citizen Electronics Co., Ltd. Light-emitting device using mounting substrate
CN104813493A (zh) * 2012-11-27 2015-07-29 西铁城电子株式会社 安装基板及使用该安装基板的发光装置
JP2014146652A (ja) * 2013-01-28 2014-08-14 Toppan Printing Co Ltd 配線基板およびその製造方法
DE102013111977A1 (de) * 2013-10-30 2015-04-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Anordnung mit mindestens einem solchen optoelektronischen Halbleiterchip
KR101537472B1 (ko) * 2014-03-20 2015-07-16 성균관대학교산학협력단 광원 모듈 및 그 제조방법과 상기 광원 모듈을 포함하는 광원 장치
JP6366337B2 (ja) * 2014-04-23 2018-08-01 シチズン電子株式会社 Ｌｅｄ発光装置及びその製造方法
JP6387677B2 (ja) * 2014-05-16 2018-09-12 日亜化学工業株式会社 発光装置及びその製造方法
JP2016184653A (ja) * 2015-03-26 2016-10-20 京セラ株式会社 発光素子収納用パッケージおよび発光装置
CN107924890A (zh) * 2015-08-06 2018-04-17 奥斯兰姆奥普托半导体有限责任公司 电子装置
JP2017123418A (ja) * 2016-01-08 2017-07-13 豊田合成株式会社 照明装置
DE102017115798A1 (de) * 2017-07-13 2019-01-17 Alanod Gmbh & Co. Kg Reflektierendes Verbundmaterial, insbesondere für oberflächenmontierte Bauelemente (SMD), und lichtemittierende Vorrichtung mit einem derartigen Verbundmaterial
JP6669197B2 (ja) * 2018-06-08 2020-03-18 日亜化学工業株式会社 発光装置及びその製造方法
WO2021172178A1 (ja) * 2020-02-26 2021-09-02 京セラ株式会社 電子部品搭載用パッケージおよび電子装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332382A (ja) * 2005-05-26 2006-12-07 Matsushita Electric Works Ltd 半導体素子実装用回路基板及びその製造方法
KR20070088956A (ko) * 2006-02-27 2007-08-30 삼성전기주식회사 발광다이오드 패키지, 발광다이오드 패키지용 회로기판 및그 제조방법
KR100764432B1 (ko) * 2006-04-05 2007-10-05 삼성전기주식회사 아노다이징 절연 층을 갖는 엘이디 패키지 및 그 제조방법
KR20080035745A (ko) * 2006-10-20 2008-04-24 주식회사 와이텔포토닉스 광소자 패키지 및 그 제조방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680841B2 (ja) * 1986-04-07 1994-10-12 株式会社小糸製作所 照明装置
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JP2003016921A (ja) * 2000-09-20 2003-01-17 Canon Inc 構造体、電子放出素子、画像形成装置およびそれらの製造方法
JP2002329822A (ja) 2001-04-24 2002-11-15 Signality System Engineering Co Ltd 複合要素を有する金属基板
US20050073846A1 (en) * 2001-09-27 2005-04-07 Kenji Takine Lightemitting device and method of manufacturing the same
JP3801931B2 (ja) * 2002-03-05 2006-07-26 ローム株式会社 Ｌｅｄチップを使用した発光装置の構造及び製造方法
US7183587B2 (en) * 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7323230B2 (en) * 2004-08-02 2008-01-29 Applied Materials, Inc. Coating for aluminum component
KR101113878B1 (ko) * 2006-06-23 2012-03-09 엘지이노텍 주식회사 수직형 발광 소자 및 그 제조방법
KR100854328B1 (ko) * 2006-07-07 2008-08-28 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
US20080237621A1 (en) * 2007-03-30 2008-10-02 Sharp Kabushiki Kaisha Light emitting device and method of producing the same
KR100888228B1 (ko) * 2007-06-22 2009-03-12 (주)웨이브닉스이에스피 금속베이스 광소자 패키지 모듈 및 그 제조방법
JP4989614B2 (ja) * 2007-12-28 2012-08-01 サムソン エルイーディー カンパニーリミテッド． 高出力ｌｅｄパッケージの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332382A (ja) * 2005-05-26 2006-12-07 Matsushita Electric Works Ltd 半導体素子実装用回路基板及びその製造方法
KR20070088956A (ko) * 2006-02-27 2007-08-30 삼성전기주식회사 발광다이오드 패키지, 발광다이오드 패키지용 회로기판 및그 제조방법
KR100764432B1 (ko) * 2006-04-05 2007-10-05 삼성전기주식회사 아노다이징 절연 층을 갖는 엘이디 패키지 및 그 제조방법
KR20080035745A (ko) * 2006-10-20 2008-04-24 주식회사 와이텔포토닉스 광소자 패키지 및 그 제조방법

Also Published As

Publication number Publication date
KR20100093681A (ko) 2010-08-26
US20110278624A1 (en) 2011-11-17
WO2010095811A2 (ko) 2010-08-26
EP2400570A2 (en) 2011-12-28
CN102318092A (zh) 2012-01-11
KR101077264B1 (ko) 2011-10-27
JP2012517697A (ja) 2012-08-02

Similar Documents

Publication Publication Date Title
WO2010095811A3 (ko) 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법
WO2009142391A3 (ko) 발광소자 패키지 및 그 제조방법
WO2012057517A3 (ko) 화합물 반도체 장치 및 화합물 반도체 제조방법
WO2010090394A3 (ko) 절연된 도전성 패턴의 제조 방법
WO2012057467A3 (ko) 구리 함유 금속막 식각액 조성물 및 이를 이용한 식각 방법
WO2011106203A3 (en) Spalling for a semiconductor substrate
WO2011052966A3 (en) Method for manufacturing conductive metal thin film using carboxylic acid
WO2012140050A3 (de) Verfahren zur herstellung eines licht emittierenden halbleiterbauelements und licht emittierendes halbleiterbauelement
WO2007117829A3 (en) Method for bonding a semiconductor substrate to a metal substrate
WO2008105360A1 (ja) 半導体装置の製造方法及び半導体装置の製造装置
WO2012091410A3 (ko) 금속박막을 이용한 터치패널 및 그 제조방법
WO2011025149A3 (ko) 반도체 기판 제조 방법 및 발광 소자 제조 방법
WO2010011009A9 (ko) 전자부품 모듈용 금속 기판과 이를 포함하는 전자부품 모듈 및 전자부품 모듈용 금속 기판 제조방법
WO2010038976A3 (en) Semiconductor light emitting device and method of manufacturing the same
WO2009056235A3 (de) Mehrschichtsystem mit kontaktelementen und verfahren zum erstellen eines kontaktelements für ein mehrschichtsystem
WO2012064636A3 (en) Contact pad and method of manufacturing the same
TW201129497A (en) silicon substrate having nanostructures and method for producing the same and application thereof
WO2011078594A3 (ko) 나노와이어를 이용하는 압저항 방식의 마이크로폰 및 그 제조방법
WO2013037071A8 (en) Zincating aluminum
WO2010050773A3 (ko) 임베디드 커패시터 및 그 제조방법
WO2013017466A9 (de) Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
WO2011043567A3 (ko) 웨이퍼 지지 부재, 그 제조방법 및 이를 포함하는 웨이퍼 연마 유닛.
WO2010098624A3 (ko) 요철부가 형성된 기판 및 이를 이용한 태양전지의 제조방법
WO2012047013A3 (ko) 정전용량방식 터치 패널 소자 및 이의 제조방법
WO2011115395A3 (ko) 광소자 디바이스 및 그 제조 방법

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980156814.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09840487

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 13146337

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2011549055

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2009840487

Country of ref document: EP