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WO2010091045A3 - Non-fluoride containing composition for the removal of polymers and other organic material from a surface - Google Patents

Non-fluoride containing composition for the removal of polymers and other organic material from a surface Download PDF

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Publication number
WO2010091045A3
WO2010091045A3 PCT/US2010/022987 US2010022987W WO2010091045A3 WO 2010091045 A3 WO2010091045 A3 WO 2010091045A3 US 2010022987 W US2010022987 W US 2010022987W WO 2010091045 A3 WO2010091045 A3 WO 2010091045A3
Authority
WO
WIPO (PCT)
Prior art keywords
polymers
removal
organic material
containing composition
fluoride containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/022987
Other languages
French (fr)
Other versions
WO2010091045A2 (en
Inventor
Michael B. Korzenski
Ping Jiang
John Warner
Ted Mendum
Michelle Lugus
Justin Whitfield
Helen Vanbenschoten
Makonnen Payne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Warner Babcock Institute for Green Chemistry LLC
Original Assignee
Advanced Technology Materials Inc
Warner Babcock Institute for Green Chemistry LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc, Warner Babcock Institute for Green Chemistry LLC filed Critical Advanced Technology Materials Inc
Publication of WO2010091045A2 publication Critical patent/WO2010091045A2/en
Publication of WO2010091045A3 publication Critical patent/WO2010091045A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Detergent Compositions (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

Removal compositions and processes for removing polymers and/or other organic materials from a surface having same thereon. The semi-aqueous composition is substantially devoid of fluoride species.
PCT/US2010/022987 2009-02-05 2010-02-03 Non-fluoride containing composition for the removal of polymers and other organic material from a surface Ceased WO2010091045A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15021609P 2009-02-05 2009-02-05
US61/150,216 2009-02-05

Publications (2)

Publication Number Publication Date
WO2010091045A2 WO2010091045A2 (en) 2010-08-12
WO2010091045A3 true WO2010091045A3 (en) 2010-11-25

Family

ID=42542621

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/022987 Ceased WO2010091045A2 (en) 2009-02-05 2010-02-03 Non-fluoride containing composition for the removal of polymers and other organic material from a surface

Country Status (2)

Country Link
TW (1) TW201107464A (en)
WO (1) WO2010091045A2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013533631A (en) 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Aqueous cleaning agent to remove residues after etching
KR20130099948A (en) 2010-08-20 2013-09-06 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Sustainable process for reclaiming precious metals and base metals from e-waste
KR101891363B1 (en) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. Composition for and method of suppressing titanium nitride corrosion
JP5933950B2 (en) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Etching solution for copper or copper alloy
WO2013101907A1 (en) 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
KR102105381B1 (en) 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. Post-cmp removal using compositions and method of use
EP2850495A4 (en) 2012-05-18 2016-01-20 Entegris Inc Composition and process for stripping photoresist from a surface including titanium nitride
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
WO2014138064A1 (en) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
JP6723152B2 (en) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド Compositions and methods for selectively etching titanium nitride
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (en) 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 Use of non-oxidizing strong acids for the removal of ion-implanted resist
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (en) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
FR3023484B1 (en) * 2014-07-11 2018-10-12 R&D Pharma ANTIFUNGAL PREPARATIONS INTENDED FOR LOCAL TREATMENT OF ONYCHOMYCOSES
TWI690780B (en) 2014-12-30 2020-04-11 美商富士軟片電子材料美國股份有限公司 Stripping compositions for removing photoresists from semiconductor substrates
KR20180087624A (en) * 2017-01-25 2018-08-02 동우 화인켐 주식회사 Resist stripper composition
KR102650361B1 (en) * 2018-10-03 2024-03-22 후지필름 가부시키가이샤 Chemical solution and chemical receptor
CN116568794B (en) * 2020-12-15 2025-07-25 默克专利股份有限公司 Photoresist remover composition
CN115418647B (en) * 2022-08-19 2024-01-05 广东红日星实业有限公司 Wax removing water and preparation method and application thereof
CN115895800B (en) * 2022-12-14 2024-12-27 芯越微电子材料(嘉兴)有限公司 Semi-aqueous wafer substrate cleaning liquid composition and use method thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0267540A2 (en) * 1986-11-10 1988-05-18 J.T. Baker Inc. Stripping compositions and their use for stripping resists from substrates
WO1999045443A1 (en) * 1998-03-03 1999-09-10 Silicon Valley Chemlabs, Inc. Composition and method for removing resist and etching residues using hydroxylammonium carboxylates
US20020077259A1 (en) * 2000-10-16 2002-06-20 Skee David C. Stabilized alkaline compositions for cleaning microlelectronic substrates
JP2004212858A (en) * 2003-01-08 2004-07-29 Tokuyama Corp Substrate cleaning liquid
WO2005093032A1 (en) * 2004-03-01 2005-10-06 Mallinckrodt Baker, Inc. Nanoelectronic and microelectronic cleaning compositions
WO2006107169A1 (en) * 2005-04-06 2006-10-12 Dongjin Semichem Co., Ltd. Remover composition for photoresist of semiconductor device
WO2007047365A2 (en) * 2005-10-13 2007-04-26 Advanced Technology Materials, Inc. Metals compatible photoresist and/or sacrificial antireflective coating removal composition
KR20080017848A (en) * 2006-08-22 2008-02-27 동우 화인켐 주식회사 Photoresist stripping solution and stripping method using the same
KR20080054714A (en) * 2006-12-13 2008-06-19 동우 화인켐 주식회사 Alkali composition for resist stripping

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0267540A2 (en) * 1986-11-10 1988-05-18 J.T. Baker Inc. Stripping compositions and their use for stripping resists from substrates
WO1999045443A1 (en) * 1998-03-03 1999-09-10 Silicon Valley Chemlabs, Inc. Composition and method for removing resist and etching residues using hydroxylammonium carboxylates
US20020077259A1 (en) * 2000-10-16 2002-06-20 Skee David C. Stabilized alkaline compositions for cleaning microlelectronic substrates
JP2004212858A (en) * 2003-01-08 2004-07-29 Tokuyama Corp Substrate cleaning liquid
WO2005093032A1 (en) * 2004-03-01 2005-10-06 Mallinckrodt Baker, Inc. Nanoelectronic and microelectronic cleaning compositions
WO2006107169A1 (en) * 2005-04-06 2006-10-12 Dongjin Semichem Co., Ltd. Remover composition for photoresist of semiconductor device
WO2007047365A2 (en) * 2005-10-13 2007-04-26 Advanced Technology Materials, Inc. Metals compatible photoresist and/or sacrificial antireflective coating removal composition
KR20080017848A (en) * 2006-08-22 2008-02-27 동우 화인켐 주식회사 Photoresist stripping solution and stripping method using the same
KR20080054714A (en) * 2006-12-13 2008-06-19 동우 화인켐 주식회사 Alkali composition for resist stripping

Also Published As

Publication number Publication date
WO2010091045A2 (en) 2010-08-12
TW201107464A (en) 2011-03-01

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