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WO2010076973A3 - 폴리 실리콘 증착장치 - Google Patents

폴리 실리콘 증착장치 Download PDF

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Publication number
WO2010076973A3
WO2010076973A3 PCT/KR2009/006972 KR2009006972W WO2010076973A3 WO 2010076973 A3 WO2010076973 A3 WO 2010076973A3 KR 2009006972 W KR2009006972 W KR 2009006972W WO 2010076973 A3 WO2010076973 A3 WO 2010076973A3
Authority
WO
WIPO (PCT)
Prior art keywords
gas
unit
electrode
core rod
silicon core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/006972
Other languages
English (en)
French (fr)
Other versions
WO2010076973A2 (ko
Inventor
유호정
박성은
엄일수
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEMI-MATERIALS Co Ltd
Semi Materials Co Ltd
Original Assignee
SEMI-MATERIALS Co Ltd
Semi Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEMI-MATERIALS Co Ltd, Semi Materials Co Ltd filed Critical SEMI-MATERIALS Co Ltd
Priority to US13/143,064 priority Critical patent/US20110290184A1/en
Priority to CN2009801004469A priority patent/CN102132380B/zh
Publication of WO2010076973A2 publication Critical patent/WO2010076973A2/ko
Publication of WO2010076973A3 publication Critical patent/WO2010076973A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

본 발명에 따른 폴리 실리콘 증착장치는, 원료가스가 투입되는 가스 투입구와 외부로 가스를 배출하는 가스 배출구 및 발열물질이 투입되는 발열물질 투입구가 형성되는 반응기의 바닥에 설치되며 소정 거리만큼 이격되게 설치되는 제1 전극과 제2 전극을 포함하는 전극부와, 전극부의 제1 전극으로부터 전류를 입력받아 전극부의 제2 전극으로 전류를 통전시키면서 자체 발열하는 실리콘 코어 로드부와, 실리콘 코어 로드부로부터 소정 간격만큼 떨어져 실리콘 코어 로드부를 둘러싸며 반응기의 발열물질 투입구를 통해 발열물질이 투입되는 발열체를 포함하는 실리콘 코어 로드 가열부와, 발열체와 실리콘 코어 로드부 사이에 설치되며 반응기의 가스 투입구를 통해 투입되는 원료가스를 상기 실리콘 코어 로드부로 공급하는 가스공급관, 및 가스공급관의 표면에 원료가스가 실리콘 코어 로드부를 향하여 흐르도록 형성되는 복수개의 노즐을 포함하는 가스 분사부를 포함한다.
PCT/KR2009/006972 2008-12-31 2009-11-25 폴리 실리콘 증착장치 Ceased WO2010076973A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/143,064 US20110290184A1 (en) 2008-12-31 2009-11-25 Poly silicon deposition device
CN2009801004469A CN102132380B (zh) 2008-12-31 2009-11-25 多晶硅沉积装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0137846 2008-12-31
KR1020080137846A KR100892123B1 (ko) 2008-12-31 2008-12-31 폴리 실리콘 증착장치

Publications (2)

Publication Number Publication Date
WO2010076973A2 WO2010076973A2 (ko) 2010-07-08
WO2010076973A3 true WO2010076973A3 (ko) 2010-09-10

Family

ID=40757344

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/006972 Ceased WO2010076973A2 (ko) 2008-12-31 2009-11-25 폴리 실리콘 증착장치

Country Status (4)

Country Link
US (1) US20110290184A1 (ko)
KR (1) KR100892123B1 (ko)
CN (1) CN102132380B (ko)
WO (1) WO2010076973A2 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034030B1 (ko) * 2010-01-11 2011-05-11 (주)세미머티리얼즈 폴리 실리콘 증착장치
KR101033162B1 (ko) 2010-01-14 2011-05-11 (주)세미머티리얼즈 폴리실리콘 증착장치
KR101142442B1 (ko) * 2010-04-01 2012-05-08 에이디알엠테크놀로지 주식회사 폴리실리콘 증착반응기 및 이를 이용한 증착방법
KR101039659B1 (ko) * 2010-08-27 2011-06-08 (주)세미머티리얼즈 폴리실리콘 증착장치
KR101439326B1 (ko) * 2010-08-31 2014-09-11 주식회사 엘지화학 폴리실리콘 제조용 ｃｖｄ 반응기의 노즐 겸용 척 및 이를 포함하는 폴리실리콘 제조용 ｃｖｄ 반응기
KR101033163B1 (ko) * 2010-09-03 2011-05-11 (주)세미머티리얼즈 폴리실리콘 증착장치
KR20120073658A (ko) * 2010-12-27 2012-07-05 (주)세미머티리얼즈 폴리 실리콘 제조장치
KR101279414B1 (ko) * 2011-08-17 2013-06-27 (주)세미머티리얼즈 폴리실리콘 제조장치 및 폴리실리콘 제조방법
DE202012100839U1 (de) * 2012-03-08 2012-06-22 Silcontec Gmbh Laborreaktor
KR101246806B1 (ko) * 2012-03-30 2013-03-26 (주)세미머티리얼즈 폴리실리콘 증착장치
CN103074604A (zh) * 2012-04-23 2013-05-01 光达光电设备科技（嘉兴）有限公司 用于化学气相沉积工艺的喷淋头和改善工艺均匀性的方法
CN103993290A (zh) * 2013-02-18 2014-08-20 生阳新材料科技（宁波）有限公司 具有自洁式视窗的蒸镀设备
US20160333478A1 (en) * 2014-01-10 2016-11-17 Mitsubishi Materials Corporation Chemical vapor deposition apparatus and chemical vapor deposition method
US10208381B2 (en) 2014-12-23 2019-02-19 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
CN107109641B (zh) * 2014-12-23 2019-06-18 瑞科硅公司 在热分解反应器中利用反射能管理温度分布的设备和方法
KR101895526B1 (ko) * 2015-08-28 2018-09-05 한화케미칼 주식회사 폴리실리콘 제조 장치
DE102015219925A1 (de) * 2015-10-14 2017-04-20 Wacker Chemie Ag Reaktor zur Abscheidung von polykristallinem Silicium
KR102096577B1 (ko) * 2016-12-29 2020-04-02 한화솔루션 주식회사 폴리실리콘 제조 장치

Citations (3)

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Patent Citations (3)

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WO2006110481A2 (en) * 2005-04-10 2006-10-19 Rec Silicon Inc Production of polycrystalline silicon
WO2007133025A1 (en) * 2006-05-11 2007-11-22 Korea Research Institute Of Chemical Technology Apparatus and methods for preparation of high-purity silicon rods using mixed core means
WO2007136209A1 (en) * 2006-05-22 2007-11-29 Korea Research Institute Of Chemical Technology Methods for preparation of high-purity polysilicon rods using a metallic core means

Also Published As

Publication number Publication date
KR100892123B1 (ko) 2009-04-09
CN102132380A (zh) 2011-07-20
CN102132380B (zh) 2013-09-25
US20110290184A1 (en) 2011-12-01
WO2010076973A2 (ko) 2010-07-08

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