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WO2010068050A3 - 태양 전지용 전극의 제조방법, 이를 이용하여 제조된 태양 전지용 기판 및 태양 전지 - Google Patents

태양 전지용 전극의 제조방법, 이를 이용하여 제조된 태양 전지용 기판 및 태양 전지 Download PDF

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Publication number
WO2010068050A3
WO2010068050A3 PCT/KR2009/007390 KR2009007390W WO2010068050A3 WO 2010068050 A3 WO2010068050 A3 WO 2010068050A3 KR 2009007390 W KR2009007390 W KR 2009007390W WO 2010068050 A3 WO2010068050 A3 WO 2010068050A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrodes
solar cells
conductive paste
crystallized
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/007390
Other languages
English (en)
French (fr)
Other versions
WO2010068050A2 (ko
WO2010068050A9 (ko
Inventor
이수진
박선찬
이용기
정현민
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SSCP Co Ltd
Original Assignee
SSCP Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SSCP Co Ltd filed Critical SSCP Co Ltd
Priority to CN2009801499550A priority Critical patent/CN102246319A/zh
Priority to JP2011540606A priority patent/JP2012514850A/ja
Publication of WO2010068050A2 publication Critical patent/WO2010068050A2/ko
Publication of WO2010068050A3 publication Critical patent/WO2010068050A3/ko
Publication of WO2010068050A9 publication Critical patent/WO2010068050A9/ko
Priority to US13/157,422 priority patent/US20110240119A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 기판 위에 도전성 페이스트를 인쇄 방식 및 습식 금속 도금 방식으로 형성하고, 다공성인 적층 도전성 페이스트 위에 금속 도금 하는 것이 아닌, 불필요한 비결정화된 도전성 페이스트 영역을 에칭 제거하는 것을 통해, 기판 상에 금속 결정화층에 다이렉트로 금속 도금함으로써, 공극이 없는 전극 구조를 형성할 수 있고, 또한, 기판과 전극간의 밀착성을 향상시키고, 전극의 비저항을 감소시키며, 특히, 도금 후 열처리 공정을 통해 도금된 금속과 하지인 금속 결정화층과 기판과의 부가적인 오믹 컨텍을 형성하여 태양 전지 셀의 효율을 향상시킬 수 있는 태양 전지용 전극의 제조방법, 이를 이용하여 제조된 태양 전지용 기판 및 태양 전지를 제공한다. 본 발명의 제조방법은 도전성 페이스트를 금속 결정화층만 형성할 수 있도록, 최소한으로 인쇄해도 되므로, 고가의 도전성 페이스트의 사용량을 절감할 수 있으며, 단 1회의 옵셋 인쇄만으로도 정밀 패턴을 얻을 수 있기 때문에 양산성 및 수율 하락 등을 야기하는 패턴 정렬 문제를 해결할 수 있고, 최소한의 두께로 인쇄되므로 상대적으로 두꺼운 두께의 전극 패턴에 비하여 저온 소결이나 매우 짧은 시간동안의 고온 소결을 가능하고, 전극의 광차폐로 인한 효율 손실을 줄일 수 있다.
PCT/KR2009/007390 2008-12-10 2009-12-10 태양 전지용 전극의 제조방법, 이를 이용하여 제조된 태양 전지용 기판 및 태양 전지 Ceased WO2010068050A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2009801499550A CN102246319A (zh) 2008-12-10 2009-12-10 太阳能电池用电极制造方法、利用上述电极的太阳能电池用基板及太阳能电池
JP2011540606A JP2012514850A (ja) 2008-12-10 2009-12-10 太陽電池用電極の製造方法、これを用いて製造された太陽電池用基板および太陽電池
US13/157,422 US20110240119A1 (en) 2008-12-10 2011-06-10 Method for preparing solar cell electrodes, solar cell substrates prepared thereby, and solar cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080125297A KR20100066817A (ko) 2008-12-10 2008-12-10 태양 전지용 전극의 제조방법, 이를 이용하여 제조된 태양 전지용 기판 및 태양 전지
KR10-2008-0125297 2008-12-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/157,422 Continuation US20110240119A1 (en) 2008-12-10 2011-06-10 Method for preparing solar cell electrodes, solar cell substrates prepared thereby, and solar cells

Publications (3)

Publication Number Publication Date
WO2010068050A2 WO2010068050A2 (ko) 2010-06-17
WO2010068050A3 true WO2010068050A3 (ko) 2010-09-23
WO2010068050A9 WO2010068050A9 (ko) 2011-03-31

Family

ID=42243228

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/007390 Ceased WO2010068050A2 (ko) 2008-12-10 2009-12-10 태양 전지용 전극의 제조방법, 이를 이용하여 제조된 태양 전지용 기판 및 태양 전지

Country Status (5)

Country Link
US (1) US20110240119A1 (ko)
JP (1) JP2012514850A (ko)
KR (1) KR20100066817A (ko)
CN (1) CN102246319A (ko)
WO (1) WO2010068050A2 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8757567B2 (en) 2010-05-03 2014-06-24 Sunpower Corporation Bracket for photovoltaic modules
KR101661768B1 (ko) * 2010-09-03 2016-09-30 엘지전자 주식회사 태양전지 및 이의 제조 방법
JP5884077B2 (ja) * 2010-12-29 2016-03-15 パナソニックＩｐマネジメント株式会社 太陽電池及び太陽電池モジュール
CN103681942B (zh) * 2012-08-31 2016-04-13 上海比亚迪有限公司 晶体硅se太阳电池片的制备方法以及晶体硅se太阳电池片
US9293624B2 (en) 2012-12-10 2016-03-22 Sunpower Corporation Methods for electroless plating of a solar cell metallization layer
US20140311568A1 (en) * 2013-04-23 2014-10-23 National Yunlin University Of Science And Technology Solar cell with anti-reflection structure and method for fabricating the same
TWI499065B (zh) * 2013-09-30 2015-09-01 Gintech Energy Corp 太陽能電池之製造方法
CN104518050A (zh) * 2013-09-30 2015-04-15 昱晶能源科技股份有限公司 太阳能电池的制造方法
JP6330125B2 (ja) * 2013-11-28 2018-05-30 株式会社ムラカミ 太陽電池の製造方法
CN103996752B (zh) * 2014-06-10 2016-04-13 中节能太阳能科技（镇江）有限公司 一种太阳能电池正电极栅线制备方法
CN105742403A (zh) * 2014-12-11 2016-07-06 上海晶玺电子科技有限公司 背接触电池和双面电池的金属化方法
FI128685B (en) * 2016-09-27 2020-10-15 Teknologian Tutkimuskeskus Vtt Oy Layered device and its manufacturing method

Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH0563218A (ja) * 1991-08-30 1993-03-12 Canon Inc 太陽電池及びその製造方法
JPH08148709A (ja) * 1994-11-15 1996-06-07 Mitsubishi Electric Corp 薄型太陽電池の製造方法及び薄型太陽電池の製造装置

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JPS5984477A (ja) * 1982-11-04 1984-05-16 Matsushita Electric Ind Co Ltd 太陽電池の電極形成法
DE69215176T2 (de) * 1991-08-30 1997-03-27 Canon Kk Solarzelle und deren Herstellungsmethode
JP2004266023A (ja) * 2003-02-28 2004-09-24 Sharp Corp 太陽電池およびその製造方法
KR101133028B1 (ko) * 2008-11-18 2012-04-04 에스에스씨피 주식회사 태양 전지용 전극의 제조방법, 이를 이용하여 제조된 태양 전지용 기판 및 태양 전지

Patent Citations (2)

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JPH0563218A (ja) * 1991-08-30 1993-03-12 Canon Inc 太陽電池及びその製造方法
JPH08148709A (ja) * 1994-11-15 1996-06-07 Mitsubishi Electric Corp 薄型太陽電池の製造方法及び薄型太陽電池の製造装置

Also Published As

Publication number Publication date
WO2010068050A2 (ko) 2010-06-17
KR20100066817A (ko) 2010-06-18
WO2010068050A9 (ko) 2011-03-31
US20110240119A1 (en) 2011-10-06
JP2012514850A (ja) 2012-06-28
CN102246319A (zh) 2011-11-16

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