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WO2010064870A2 - Dispositif électroluminescent à semi-conducteurs - Google Patents

Dispositif électroluminescent à semi-conducteurs Download PDF

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Publication number
WO2010064870A2
WO2010064870A2 PCT/KR2009/007236 KR2009007236W WO2010064870A2 WO 2010064870 A2 WO2010064870 A2 WO 2010064870A2 KR 2009007236 W KR2009007236 W KR 2009007236W WO 2010064870 A2 WO2010064870 A2 WO 2010064870A2
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
bonding
emitting device
branch
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/007236
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English (en)
Korean (ko)
Other versions
WO2010064870A3 (fr
Inventor
김창태
남기연
이태희
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EpiValley Co Ltd
Original Assignee
EpiValley Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EpiValley Co Ltd filed Critical EpiValley Co Ltd
Priority to CN2009801488467A priority Critical patent/CN102239577A/zh
Priority to JP2011539450A priority patent/JP2012511248A/ja
Priority to US12/647,860 priority patent/US20100140656A1/en
Publication of WO2010064870A2 publication Critical patent/WO2010064870A2/fr
Publication of WO2010064870A3 publication Critical patent/WO2010064870A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Definitions

  • the present disclosure relates to a semiconductor light emitting device as a whole, and more particularly, to a semiconductor light emitting device having an electrode structure for current diffusion.
  • the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting device.
  • the group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1).
  • GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.
  • FIG. 1 is a view illustrating an example of a conventional Group III nitride semiconductor light emitting device, wherein the Group III nitride semiconductor light emitting device is grown on the substrate 100, the buffer layer 200 grown on the substrate 100, and the buffer layer 200.
  • the p-side electrode 600 formed on the group nitride semiconductor layer 500, the p-side bonding pad 700 formed on the p-side electrode 600, the p-type group III nitride semiconductor layer 500 and the active layer 400 are formed.
  • the n-side electrode 800 and the passivation layer 900 are formed on the n-type group III nitride semiconductor layer 300 exposed by mesa etching.
  • a GaN-based substrate is used as the homogeneous substrate, and a sapphire substrate, a SiC substrate, or a Si substrate is used as the heterogeneous substrate. Any substrate may be used as long as the group III nitride semiconductor layer can be grown.
  • the n-side electrode 800 may be formed on the SiC substrate side.
  • Group III nitride semiconductor layers grown on the substrate 100 are mainly grown by MOCVD (organic metal vapor growth method).
  • the buffer layer 200 is intended to overcome the difference in lattice constant and thermal expansion coefficient between the dissimilar substrate 100 and the group III nitride semiconductor, and US Pat.
  • a technique for growing an AlN buffer layer having a thickness of US Pat. No. 5,290,393 describes Al (x) Ga (1-x) N having a thickness of 10 kPa to 5000 kPa at a temperature of 200 to 900 C on a sapphire substrate. (0 ⁇ x ⁇ 1)
  • a technique for growing a buffer layer is described, and US Patent Publication No. 2006/154454 discloses growing a SiC buffer layer (seed layer) at a temperature of 600 ° C.
  • the undoped GaN layer is grown prior to the growth of the n-type Group III nitride semiconductor layer 300, which may be viewed as part of the buffer layer 200 or as part of the n-type Group III nitride semiconductor layer 300. .
  • n-type contact layer In the n-type group III nitride semiconductor layer 300, at least a region (n-type contact layer) in which the n-side electrode 800 is formed is doped with impurities, and the n-type contact layer is preferably made of GaN and doped with Si. .
  • U. S. Patent No. 5,733, 796 describes a technique for doping an n-type contact layer to a desired doping concentration by controlling the mixing ratio of Si and other source materials.
  • the active layer 400 is a layer that generates photons (light) through recombination of electrons and holes, and is mainly composed of In (x) Ga (1-x) N (0 ⁇ x ⁇ 1), and one quantum well layer (single quantum wells) or multiple quantum wells.
  • the p-type III-nitride semiconductor layer 500 is doped with an appropriate impurity such as Mg, and has an p-type conductivity through an activation process.
  • U.S. Patent No. 5,247,533 describes a technique for activating a p-type group III nitride semiconductor layer by electron beam irradiation, and U.S. Patent No. 5,306,662 annealing the p-type Group III nitride semiconductor layer at a temperature of 400 ⁇ ⁇ or higher. A technique for activating is described, and US Patent Publication No.
  • the p-side electrode 600 is provided to supply a good current to the entire p-type group III nitride semiconductor layer 500.
  • US Patent No. 5,563,422 is formed over almost the entire surface of the p-type group III nitride semiconductor layer.
  • a light-transmitting electrode made of Ni and Au in ohmic contact with the p-type III-nitride semiconductor layer 500 is described.
  • US Pat. No. 6,515,306 discloses n on the p-type III-nitride semiconductor layer. A technique is described in which a type superlattice layer is formed and then a translucent electrode made of indium tin oxide (ITO) is formed thereon.
  • ITO indium tin oxide
  • the p-side electrode 600 may be formed to have a thick thickness so as not to transmit light, that is, to reflect the light toward the substrate side, this technique is referred to as flip chip (flip chip) technology.
  • U. S. Patent No. 6,194, 743 describes a technique relating to an electrode structure including an Ag layer having a thickness of 20 nm or more, a diffusion barrier layer covering the Ag layer, and a bonding layer made of Au and Al covering the diffusion barrier layer.
  • the p-side bonding pad 700 and the n-side electrode 800 are for supplying current and wire bonding to the outside, and US Patent No. 5,563,422 describes a technique in which the n-side electrode is composed of Ti and Al.
  • the passivation layer 900 is formed of a material such as silicon dioxide and may be omitted.
  • the n-type III-nitride semiconductor layer 300 or the p-type III-nitride semiconductor layer 500 may be composed of a single layer or a plurality of layers, and recently, the substrate 100 may be formed by laser or wet etching. A technique for manufacturing a vertical light emitting device by separating from group III nitride semiconductor layers has been introduced.
  • FIG. 2 is a view showing an example of the electrode structure described in U.S. Patent No. 5,563,422, wherein the p-side bonding pad 700 and the n-side electrode 800 are positioned at diagonal corners of the light emitting device to improve current spreading. It is described.
  • FIG. 3 is a diagram illustrating an example of an electrode structure described in US Pat. No. 6,307,218.
  • the light emitting device has branches having equal intervals between the p-side bonding pads 710 and 710 and the n-side electrodes 810 and 810 as the light emitting device becomes larger. Techniques for improving current spreading with electrodes 910 and 910 are described.
  • a light emitting device having such an electrode structure has a problem in that current may be concentrated in an area R close to the distance between the p-side bonding pads 710 and the n-side electrodes 810.
  • FIG. 4 is a diagram illustrating an example of a photograph of a semiconductor light emitting device in which wire bonding defects occur.
  • FIG. 4A illustrates a light emitting device in which four wires are normally bonded
  • FIG. 4B Is a picture in which two wires fall, and the light emitting device in which two wires are diagonally bonded emits light
  • FIG. 4 (c) shows that the light emitting device in which two wires are dropped and two wires are bonded only in one direction is lighted. It is a photograph to emit. It can be seen that light does not come out evenly due to poor bonding of the wire.
  • a first bonding supplying a current for recombination of electrons and holes
  • An electrode and a second bonding electrode An electrode and a second bonding electrode; A first branch electrode and a second branch electrode extending from the first bonding electrode; A third extending from the second bonding electrode and positioned between the first branch electrode and the second branch electrode with a first gap with respect to the first branch electrode and with a second gap narrower than the first gap with respect to the second branch electrode;
  • the second branch electrode is located farther from the center of the light emitting device than the first branch electrode, and the third branch electrode is located farther from the center of the light emitting device than the second branch electrode.
  • a light emitting element is provided.
  • a first bonding supplying a current for recombination of electrons and holes
  • An electrode and a second bonding electrode wherein at least one of the first bonding electrode and the second bonding electrode comprises: a first bonding electrode and a second bonding electrode having two bonding pads; A first branch electrode and a second branch electrode extending from the first bonding electrode; A third extending from the second bonding electrode and positioned between the first branch electrode and the second branch electrode with a first gap with respect to the first branch electrode and with a second gap narrower than the first gap with respect to the second branch electrode;
  • a semiconductor light emitting device comprising a branch electrode.
  • the other semiconductor light emitting device According to the other semiconductor light emitting device according to the present disclosure, it is possible to improve the concentration of the current in the case of poor wire bonding.
  • FIG. 1 is a view showing an example of a conventional group III nitride semiconductor light emitting device
  • FIG. 2 is a view showing an example of an electrode structure described in US Patent No. 5,563,422;
  • FIG. 3 is a view showing an example of an electrode structure described in US Pat. No. 6,307,218;
  • FIG. 6 illustrates an example of a semiconductor light emitting device according to the present disclosure.
  • a driving region (hereinafter, referred to as a concentrated region R) may occur.
  • the concentrated region R is often located on a straight line distance between the bonding pad 70 and the bonding pad 80, but in the present disclosure, the concentrated region R is the bonding pad 70 and the bonding pad 80. It is not limited to the area
  • the region R1 may be the concentrated region R with respect to the region R2, and the region R2 may be the concentrated region R with respect to the region R3 (FIG. 5A). Reference). Therefore, the concentrated region R may be formed by relatively changing the distribution of current even in the region R1.
  • the branch electrode 91 is connected to the bonding pad 70 and is positioned in the concentrated region R.
  • the branch electrode 92 is connected to the bonding pad 80 and is positioned at a distance G1 from the branch electrode 91.
  • the branch electrode 93 is connected to the branch electrode 91 and is positioned at a distance G2 from the branch electrode 92.
  • the interval G1 is wider than the interval G2 (see FIG. 5B). Accordingly, the concentrated region R may be relaxed or eliminated.
  • the branch electrode 92 and the branch electrode 93 may be sequentially removed from the branch electrode 91 so as to be more advantageous in relaxing or eliminating the concentrated region R.
  • the branch electrode 94 is positioned at a gap G3 narrower than the gap G1 with the branch electrode 93, and the gap G3 is preferably narrower than the gap G2. Do.
  • the relationship between the gap G1 formed by the branch electrode 91 and the branch electrode 92 and the gap G2 formed by the branch electrode 92 and the branch electrode 93 is the interval G2 and the gap G3. Because it can be applied to.
  • FIG. 6 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure.
  • the light emitting device includes bonding pads 70 and 80 and branch electrodes 91, 92, 93, 94, and 95.
  • the light emitting device is an example of the size of 1mm horizontal, 1mm vertical.
  • the bonding pad 70 and the bonding pad 80 supply current to emit light in the active layer (see FIG. 1) by recombination of electrons and holes.
  • the bonding pad 70 and the bonding pad 80 are located between both sides of the light emitting element.
  • the bonding pads 70 are formed by attaching two circular pads 72 and 74 to each other. Meanwhile, in the bonding pad 70, two pads 72 and 74 which are circular are positioned apart from each other, and the two pads 72 and 74 are connected to each other by the branch electrodes 91, 93 and 95. It may be.
  • the bonding pad 80 may also be formed in the same manner as the bonding pad 70. Meanwhile, the pads 72, 74, 82, and 84 may have various shapes such as ellipses and polygons.
  • the branch electrode 91 extends from the bonding pad 70 toward the bonding pad 80, which means that the branch electrode 91 is located in the concentrated region R, described with reference to FIG. 5.
  • the branch electrode 92 is positioned at a distance G1 from the branch electrode 91.
  • the branch electrode 92 extends from the bonding pad 80 toward the bonding pad 70 so that the current can be smoothly spread with the branch electrode 91 at a gap G1 of about 128 ⁇ m. It is divided into and is bent and extended in the shape which embraces the branch electrode 91 as a whole.
  • the branch electrode 93 is positioned at a distance G2 narrower than the distance G1 with the branch electrode 92.
  • the branch electrode 93 is branched from the branch electrode 91 to both sides so that the current spreads smoothly with the branch electrode 92 at an interval G2 of about 89 ⁇ m. It is bent and extended in a shape to hold.
  • the branch electrode 94 is positioned at a distance G3 from the branch electrode 93.
  • the interval G3 is narrower than the interval G1.
  • the interval G3 is preferably narrower than the interval G2.
  • the branch electrode 94 is divided from both sides of the branch electrode 92 so that the current can be smoothly spread with the branch electrode 93 at an interval G3 of about 80 ⁇ m. It is bent and extended in a shape to hold.
  • the branch electrode 95 may be positioned with respect to the branch electrode 94 at an interval G4 of, for example, about 89 ⁇ m, and the interval G4 is wider and narrower than the interval G3 depending on the degree of current concentration. Can also be formed.
  • the branch electrodes 92, 93, 94, and 95 have an annular extension e. Through the extension portion e, the current can be spread around, thereby further improving the spread of the current.
  • a semiconductor light emitting device comprising a plurality of branch electrodes at different intervals. This can improve the concentration of the current.
  • a semiconductor light emitting element comprising an electrode to which a plurality of wires can be bonded. This can improve the concentration of current even when the wire is poorly bonded to the electrode.
  • first bonding electrode and a second bonding electrode for supplying a current for recombination of electrons and holes;
  • a first branch electrode and a second branch electrode extending from the first bonding electrode;
  • At least one of the second bonding electrodes is located at the central portion of the light emitting device on one side of the semiconductor light emitting device.

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Abstract

L'invention concerne un dispositif électroluminescent à semi-conducteurs et plus particulièrement un dispositif électroluminescent à semi-conducteurs générant de la lumière par recombinaison électron-trou. Le dispositif électroluminescent à semi-conducteurs comprend: une première électrode de liaison et une seconde électrode de liaison qui fournit un courant pour la recombinaison électron-trou; une première électrode de doigt ramifiée et une seconde électrode de doigt ramifiée qui est ramifiée depuis la première électrode de liaison; et une troisième électrode de doigt ramifiée qui est ramifiée depuis une troisième électrode de liaison et qui est interposée entre la première électrode de doigt ramifiée et la seconde électrode de doigt ramifiée de manière à présenter un premier écartement depuis la première électrode de doigt ramifiée et un second écartement depuis la seconde électrode de doigt ramifiée, le second écartement étant plus étroit que le premier écartement. La seconde électrode de doigt ramifiée est située plus près du centre du dispositif électroluminescent que la première électrode de doigt ramifiée, et la troisième électrode de doigt ramifiée est située plus près du centre du dispositif électroluminescent que la seconde électrode de doigt ramifiée.
PCT/KR2009/007236 2008-12-04 2009-12-04 Dispositif électroluminescent à semi-conducteurs Ceased WO2010064870A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2009801488467A CN102239577A (zh) 2008-12-04 2009-12-04 半导体发光器件
JP2011539450A JP2012511248A (ja) 2008-12-04 2009-12-04 半導体発光素子
US12/647,860 US20100140656A1 (en) 2008-12-04 2009-12-28 Semiconductor Light-Emitting Device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080122467A KR101000277B1 (ko) 2008-12-04 2008-12-04 반도체 발광소자
KR10-2008-0122467 2008-12-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/647,860 Continuation US20100140656A1 (en) 2008-12-04 2009-12-28 Semiconductor Light-Emitting Device

Publications (2)

Publication Number Publication Date
WO2010064870A2 true WO2010064870A2 (fr) 2010-06-10
WO2010064870A3 WO2010064870A3 (fr) 2010-08-26

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PCT/KR2009/007236 Ceased WO2010064870A2 (fr) 2008-12-04 2009-12-04 Dispositif électroluminescent à semi-conducteurs

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JP (1) JP2012511248A (fr)
KR (1) KR101000277B1 (fr)
CN (1) CN102239577A (fr)
WO (1) WO2010064870A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150067032A (ko) * 2013-12-09 2015-06-17 니치아 카가쿠 고교 가부시키가이샤 발광 소자

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102357289B1 (ko) 2014-07-01 2022-02-03 서울바이오시스 주식회사 발광 소자
WO2016003205A1 (fr) * 2014-07-01 2016-01-07 서울바이오시스 주식회사 Élément électroluminescent
KR101686557B1 (ko) * 2015-01-23 2016-12-14 서울바이오시스 주식회사 반도체 발광소자

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
US6777805B2 (en) * 2000-03-31 2004-08-17 Toyoda Gosei Co., Ltd. Group-III nitride compound semiconductor device
JP4810746B2 (ja) 2000-03-31 2011-11-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP4053926B2 (ja) 2002-05-27 2008-02-27 日亜化学工業株式会社 窒化物半導体発光素子とそれを用いた発光装置
KR100631969B1 (ko) * 2005-02-28 2006-10-11 삼성전기주식회사 질화물 반도체 발광소자
TWI291243B (en) * 2005-06-24 2007-12-11 Epistar Corp A semiconductor light-emitting device
KR100833309B1 (ko) * 2006-04-04 2008-05-28 삼성전기주식회사 질화물계 반도체 발광소자
KR100878396B1 (ko) * 2007-04-06 2009-01-13 삼성전기주식회사 반도체 발광소자

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150067032A (ko) * 2013-12-09 2015-06-17 니치아 카가쿠 고교 가부시키가이샤 발광 소자
JP2015133477A (ja) * 2013-12-09 2015-07-23 日亜化学工業株式会社 発光素子
US10276751B2 (en) 2013-12-09 2019-04-30 Nichia Corporation Light emitting element
US10593840B2 (en) 2013-12-09 2020-03-17 Nichia Corporation Light emitting element
KR102227815B1 (ko) 2013-12-09 2021-03-15 니치아 카가쿠 고교 가부시키가이샤 발광 소자
US10978617B2 (en) 2013-12-09 2021-04-13 Nichia Corporation Light emitting element
US11817529B2 (en) 2013-12-09 2023-11-14 Nichia Corporation Light emitting element
US12068437B2 (en) 2013-12-09 2024-08-20 Nichia Corporation Light emitting element
US12414410B2 (en) 2013-12-09 2025-09-09 Nichia Corporation Light emitting element

Also Published As

Publication number Publication date
KR101000277B1 (ko) 2010-12-10
WO2010064870A3 (fr) 2010-08-26
CN102239577A (zh) 2011-11-09
KR20100064050A (ko) 2010-06-14
JP2012511248A (ja) 2012-05-17

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