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WO2010052942A1 - 電子部品内蔵配線板及びその製造方法 - Google Patents

電子部品内蔵配線板及びその製造方法 Download PDF

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Publication number
WO2010052942A1
WO2010052942A1 PCT/JP2009/054585 JP2009054585W WO2010052942A1 WO 2010052942 A1 WO2010052942 A1 WO 2010052942A1 JP 2009054585 W JP2009054585 W JP 2009054585W WO 2010052942 A1 WO2010052942 A1 WO 2010052942A1
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WIPO (PCT)
Prior art keywords
electronic component
wiring board
conductor pattern
built
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2009/054585
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English (en)
French (fr)
Inventor
俊樹 古谷
剛士 古澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP2010536708A priority Critical patent/JPWO2010052942A1/ja
Priority to CN2009801326496A priority patent/CN102132639A/zh
Publication of WO2010052942A1 publication Critical patent/WO2010052942A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H05K1/186Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding
    • H05K1/187Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding the patterned circuits being prefabricated circuits, which are not yet attached to a permanent insulating substrate, e.g. on a temporary carrier
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
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    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09909Special local insulating pattern, e.g. as dam around component
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    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/205Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3452Solder masks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4602Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49133Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49146Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49204Contact or terminal manufacturing

Definitions

  • the present invention relates to an electronic component built-in wiring board in which an electronic component such as a semiconductor element is accommodated.
  • Patent Document 1 it is possible to increase the functionality and density of a multilayer wiring board by incorporating electronic components in the wiring board. In other words, by storing the electronic components inside, it is possible to mount other electronic components and the like in the surface mounting region, and it is possible to enhance the functionality.
  • the multilayer wiring board itself can be made smaller, and the circuit can be densified as compared to a conventional multilayer wiring board. Furthermore, since the wiring length can be reduced, an improvement in performance can be expected.
  • solder resist on the formed conductor pattern for the purpose of preventing adhesion of solder, maintaining insulation between conductors, and protecting conductors.
  • the conductor pattern layer including the connection terminal for electrical connection with the built-in electronic component is protected with a solder resist for fine pitch.
  • the coefficient of thermal expansion of the material (insulating resin) constituting the solder resist is higher than that of the metal constituting the conductor pattern. Therefore, if a solder resist is formed on the entire surface of the conductor pattern layer on which the connection terminals are formed, the wiring board may be warped due to the difference in thermal expansion coefficient between the two.
  • the present invention has been made in view of the above-described conventional problems, and provides a wiring board with a built-in electronic component that can achieve fine pitch, can prevent warpage, and has excellent quality such as connection reliability, and a method for manufacturing the same.
  • the purpose is to do.
  • the electronic component built-in wiring board according to the present invention An electronic component built-in wiring board in which electronic components are embedded by flip chip mounting, A conductor pattern layer; A connection terminal provided on the conductor pattern layer and electrically joined to the electronic component; A solder resist layer formed on the conductor pattern layer, The solder resist layer is formed around the connection terminal on the conductor pattern layer, and is not formed in at least some other regions on the conductor pattern layer.
  • connection terminal includes a bonding layer formed on the conductor pattern layer with a metal different from the conductor pattern layer.
  • the bonding layer may be made of solder.
  • the solder resist layer covers at least a part of the connection terminal formation region in the conductor pattern layer.
  • the electronic component is covered with an insulating material, and a through-hole conductor is formed on the insulating material.
  • the conductor pattern layer may be formed so as not to protrude from the surface of the insulating material.
  • the surface of the conductor pattern layer may be roughened.
  • the manufacturing method of the electronic component built-in wiring board A step of forming a conductor pattern layer on the metal foil in the laminated substrate in which the metal foil is disposed on the support; Forming a solder resist layer provided with a predetermined opening in a partial region on the conductor pattern layer; and Forming a connection terminal by providing a bonding layer on the conductor pattern layer corresponding to the opening of the solder resist layer; and On the laminated substrate, the electronic component is disposed so that the circuit forming surface of the electronic component and the forming surface of the connection terminal face each other, and electrically connecting the electronic component and the connection terminal; Covering the electronic component after mounting with an insulating material; Removing the support; Removing the exposed metal foil.
  • the joining layer is preferably made of a metal different from the conductor pattern layer.
  • the bonding layer may be formed of solder.
  • a step of providing a through hole in the insulating material to form a through-hole conductor may be further included.
  • the conductive pattern layer may be formed by electrolytic plating.
  • the conductor pattern layer After the formation of the conductor pattern layer, it may further include a step of roughening the surface of the conductor pattern layer before forming the solder resist layer.
  • the electronic component After mounting the electronic component, it may further include a step of filling an insulating resin around the connection terminal.
  • the bumps may be arranged in a grid pattern on the circuit formation surface (so-called area array type), or may be arranged at the end of the circuit formation surface (so-called peripheral type).
  • a wiring board with a built-in electronic component that can achieve a fine pitch, can prevent warpage, and is excellent in quality such as connection reliability.
  • FIG. 4F is a cross-sectional view showing a step of manufacturing a multilayer wiring board from the electronic component built-in wiring board of FIG. 4F (part 1).
  • FIG. 4F is a cross-sectional view showing a step of manufacturing a multilayer wiring board from the electronic component built-in wiring board of FIG. 4F (part 2).
  • FIG. 4F is a cross-sectional view showing a step of manufacturing a multilayer wiring board from the electronic component built-in wiring board of FIG. 4F (part 2).
  • FIG. 4F is a cross-sectional view showing a step of manufacturing a multilayer wiring board from the electronic component built-in wiring board of FIG. 4F (part 3).
  • FIG. 4F is a cross-sectional view showing a step of manufacturing a multilayer wiring board from the electronic component built-in wiring board of FIG. 4F (part 4).
  • FIG. 4F is a cross-sectional view showing a step of manufacturing a multilayer wiring board from the electronic component built-in wiring board of FIG. 4F (part 5). It is sectional drawing which shows the structure of the multilayer wiring board which uses the electronic component built-in wiring board of FIG. 4F. It is a top view for demonstrating the formation aspect of the soldering resist layer in this embodiment.
  • FIG. 4F is a schematic cross-sectional view of the electronic component built-in wiring board 1 according to the present embodiment.
  • the electronic component built-in wiring board 1 is used as, for example, a core substrate of a multilayer printed wiring board.
  • the electronic component built-in wiring board 1 includes an electronic component 2, an insulating material 3, an underfill material 4, a filling resin 5, inner conductor patterns 40 and 50, a solder resist layer 112, an outer conductor pattern 60, 70, a connection terminal 80, and a through-hole conductor 90.
  • the electronic component 2 is a flip chip and has a plurality of bumps 20 arranged in an area array type.
  • the bump 20 is, for example, a gold stud bump having a thickness of about 30 ⁇ m.
  • the insulating material 3 is a plate material obtained by impregnating a reinforcing material such as glass fiber or aramid fiber with a resin such as an epoxy resin, a polyester resin, a polyimide resin, a bismaleimide-triazine resin (BT resin), or a phenol resin. In the form, it consists of a prepreg.
  • the underfill material 4 is, for example, an insulating resin containing an inorganic filler such as silica or alumina, and secures the fixing strength of the electronic component 2 and also the electronic component 2 and the insulating material (for example, the insulating material 3 and the filling resin 5). ) To absorb the strain generated by the gap of thermal expansion coefficient.
  • the underfill material 4 is preferably made of a thermosetting resin and 40 to 90 wt% inorganic filler.
  • the filler size (average particle diameter) is preferably 0.1 to 3.0 ⁇ m.
  • the filling resin 5 is preferably made of a thermosetting resin and an inorganic filler.
  • the inorganic filler for example, Al 2 O 3 , MgO, BN, AlN, or SiO 2 can be used.
  • the thermosetting resin for example, an epoxy resin, a phenol resin or a cyanate resin having high heat resistance is preferable, and among them, an epoxy resin having excellent heat resistance is particularly preferable.
  • the solder resist layer 112 is made of, for example, a photosensitive resin using an acrylic-epoxy resin, a thermosetting resin mainly composed of an epoxy resin, an ultraviolet curable resin, or the like as a material for screen printing, spray coating, roll coating, or the like. Can be formed. Alternatively, a photosensitive dry film using an acrylic-epoxy resin may be formed by vacuum lamination or the like.
  • the conductor pattern 40 made of copper or the like is formed inside the first surface side (the side facing the circuit formation surface of the electronic component 2) of the electronic component built-in wiring board 1 (hereinafter referred to as a first inner layer). .
  • the thickness of the conductor pattern 40 is about 15 ⁇ m.
  • a part of the conductor pattern 40 is used as the first inner through-hole land 91 connected to the pad 81 and the through-hole conductor 90 constituting the connection terminal 80.
  • the conductor pattern 50 made of copper or the like is formed on the inner side (hereinafter referred to as a second inner layer) of the second surface (main surface opposite to the first surface) of the electronic component built-in wiring board 1, and a part thereof.
  • the second inner through-hole land 92 is connected to the through-hole conductor 90.
  • the thickness of the conductor pattern 50 is about 15 ⁇ m.
  • the first inner layer through-hole land 91 and the second inner layer through-hole land 92 are electrically connected via a through-hole conductor 90.
  • the conductor pattern 60 made of copper or the like is formed on the first surface of the electronic component built-in wiring board 1 (hereinafter referred to as the first outer layer), and a part thereof is connected to the through-hole conductor 90. This is the first outer layer through-hole land 93.
  • the thickness of the conductor pattern 60 is about 20 ⁇ m.
  • the conductor pattern 70 made of copper or the like is formed on the second surface (hereinafter referred to as a second outer layer) of the electronic component built-in wiring board 1, and a part thereof is connected to the through-hole conductor 90.
  • the second outer layer through-hole land 94 is formed.
  • the thickness of the conductor pattern 70 is about 20 ⁇ m.
  • the connection terminal 80 is a terminal for electrically connecting to the bump 20 of the electronic component 2, and includes a pad 81 and a bonding layer 82.
  • the thickness of the pad 81 is about 15 ⁇ m
  • the thickness of the bonding layer 82 is about 15 ⁇ m.
  • the bonding layer 82 is formed of a metal different from the pad 81 on the pad 81 (that is, on the conductor pattern 40).
  • the bonding layer 82 may be formed by electrolytic plating using a metal such as solder, tin, nickel, gold, or an alloy thereof, or may be formed by printing solder paste and performing reflow. May be.
  • the bonding layer 82 may be composed of a plurality of layers by combining these.
  • the outermost layer portion of the bonding layer 82 is preferably made of solder.
  • the electronic component built-in wiring board 1 configured as described above is characterized in that the solder resist layer 112 is partially formed instead of the entire surface of the conductor pattern layer.
  • a method for manufacturing the electronic component built-in wiring board 1 will be described with reference to FIGS. 1A to 4E.
  • connection terminal 80 (FIGS. 1A to 1H)
  • the support substrate 100 is a so-called copper foil with a carrier, in which a copper foil 101 and a carrier 102 made of copper are bonded using an adhesive (peeling layer) so as to be peeled (separated).
  • the thickness of the copper foil 101 is about 5 ⁇ m
  • the thickness of the carrier 102 is about 70 ⁇ m.
  • the carrier 102 is not limited to copper, and an insulating material or the like can be used.
  • connection terminal 80 for mounting the electronic component 2 is formed on the copper foil 101 of the support base material 100 using the additive method.
  • a metal such as nickel is used as the first base layer 110 by a method such as electroless plating, electrolytic plating, or sputtering. It is formed so as to have a thickness of about 1 ⁇ m on the entire surface of 100 copper foils 101. Thus, erosion due to etching can be prevented and a fine pattern can be formed.
  • the solder resist layer 112 is formed as in this embodiment, as shown in FIG. 1B, a metal such as titanium is used as the second underlayer 111 by a method such as electroless plating or sputtering.
  • the first base layer 110 is formed on the entire surface so as to have a thickness of about 0.1 ⁇ m.
  • the additive method refers to a method of forming a conductor pattern by growing a plating on a portion where a plating resist pattern is not formed and then removing the plating resist.
  • the formation of the connection terminal 80 using this additive method will be specifically described.
  • a dry film-like photosensitive resist 103 is laminated on the second underlayer 111 of the substrate of FIG. 1B (see FIG. 1C). Then, a mask film is brought into close contact with the laminated photosensitive resist 103, exposed to ultraviolet rays, and developed with an alkaline aqueous solution. As a result, the plating resist layer 104 having an opening corresponding to only the conductor pattern 40 is formed (see FIG. 1D).
  • the substrate of FIG. 1D is washed with water and dried, and then electrolytic copper plating is performed to form a copper plating layer 105 having a thickness of about 15 ⁇ m (see FIG. 1E).
  • substrate (refer FIG. 1F) in which the conductor pattern 40 and the pad 81 were formed is obtained by peeling the plating resist layer 104.
  • a liquid or dry film photosensitive resist (solder resist) is applied or laminated on the substrate surface of FIG. 1F to form a solder resist layer having a thickness of about 20 ⁇ m.
  • a mask film on which a predetermined pattern is formed is brought into close contact with the surface of the solder resist layer, exposed to ultraviolet rays, and developed with an alkaline aqueous solution.
  • FIG. 6 is a plan view showing a part of the substrate of FIG. 1G.
  • the solder resist layer 112 is formed in a region corresponding to the circuit formation surface of the electronic component 2 on the substrate surface of FIG. 1G.
  • the solder resist layer 112 is provided with a plurality of openings 61 for exposing the surface of each pad 81. More strictly, the entire surface of each pad 81 is not exposed by the opening 61 of the solder resist layer 112, and at least a part of each pad 81 is covered with the solder resist layer 112.
  • a bonding layer 82 is formed on the pad 81 (see FIG. 1H).
  • the bonding layer 82 is formed by printing solder paste and performing reflow.
  • the solder resist layer 112 is formed around the pad 81, it is possible to prevent the solder from flowing out to a portion other than the pad 81, and to form a uniform and bulky bonding layer 82 on the pad 81. It is easy to form.
  • the connection terminal 80 for joining with the bump 20 of the electronic component 2 is obtained.
  • the insulating materials 30a and 30b are placed on the mounting surface of the electronic component 2 on the substrate of FIG. 2B (see FIG. 3A).
  • the insulating materials 30a and 30b are plate materials (a prepreg in this embodiment) formed by impregnating a reinforcing material such as a glass cloth with a resin.
  • the insulating material 30a is punched according to the shape of the electronic component 2, and is placed in such a manner as to surround the electronic component 2 in a direction parallel to the mounting surface.
  • a punching method (punching) is suitable for punching.
  • a mechanical drill or a laser may be used.
  • the insulating material 30b is not subjected to punching processing and is in the form of a sheet, and is placed on the insulating material 30a and on the surface opposite to the bump 20 formation surface of the electronic component 2.
  • the substrate 500 on which the conductor pattern 50 is formed is laminated on the insulating material 30b with the surface on which the conductive pattern 50 is formed facing the insulating material 30b (see FIGS. 3B and 3C).
  • this lamination method for example, an autoclave method, a hydro press method, or the like can be used.
  • a method for manufacturing the substrate 500 will be briefly described. First, a support base material (consisting of a copper foil 501 having a thickness of about 5 ⁇ m and a carrier 502 having a thickness of about 70 ⁇ m) is prepared. Then, a dry film-like photosensitive resist is laminated on the supporting substrate. Then, a mask film on which a predetermined pattern is formed is brought into close contact with the laminated photosensitive resist, and exposure and development are performed, whereby a plating resist layer in which only a portion corresponding to the conductor pattern 50 is opened is formed.
  • the substrate after the plating resist layer is formed is washed with water and dried, and then electrolytic nickel plating or the like is performed to form a base layer 503 having a thickness of about 1 ⁇ m.
  • electrolytic copper plating is further performed to form a copper plating layer having a thickness of about 15 ⁇ m on the base layer 503. Then, when the plating resist layer is removed, washed with water and dried, the substrate 500 on which the conductor pattern 50 is formed is obtained.
  • the insulating material 30a and the insulating material 30b are fused, and the insulating material 3 is formed as shown in FIG. 3C. Further, at that time, the resin component flows out from the insulating materials 30 a and 30 b, and the gap portion generated between the electronic component 2 and the insulating materials 30 a and 30 b is filled with the filling resin 5.
  • a plating resist layer 107 having an opening corresponding to only the conductor pattern 60 and a plating resist layer 108 having an opening corresponding to only the conductor pattern 70 are formed (see FIG. 4D).
  • the substrate of FIG. 4D is washed with water and dried, and then electrolytic copper plating is performed to remove the plating resist layers 107 and 108.
  • the copper plating film 109 and the through-hole conductor 90 are formed.
  • unnecessary copper plating layers 113, copper foil 101, and copper foil 501 on both main surfaces of the substrate of FIG. 4E are removed using an etchant that can selectively etch copper.
  • the first base layer 110 and the second base layer 111 are removed using an etchant that can selectively etch a metal different from copper, such as nickel or titanium.
  • the electronic component built-in wiring board 1 manufactured as described above has the following excellent features.
  • connection terminal 80 for mounting an electronic component is previously formed on the support base material 100, (b) the support base material 100 has a large thickness (about 75 ⁇ m), (c )
  • the conductor pattern 40 and the connection terminal 80 can be formed at a fine pitch (for example, 50 ⁇ m).
  • the carrier 102 of the supporting base material 100 is easily removed by peeling, damage that may be applied to the connection terminal 80 can be reduced as much as possible when removing an unnecessary metal layer.
  • the formed connection terminal 80 and conductor pattern 40 are not etched in a subsequent process, the pattern shape at the time of formation is maintained. Therefore, the pattern accuracy can be improved.
  • the electronic component built-in wiring board 1 has a structure (symmetric structure) in which the insulating material (the underfill material 4 and the insulating material 3) sandwiches the electronic component 2 in the downward direction and the upward direction on the mounting surface. have.
  • stress due to stress heat, vibration impact, drop impact, etc.
  • the conductor pattern 60 and the conductor pattern 70 are respectively formed on the first surface and the second surface of the electronic component built-in wiring board 1, resistance to warping is further increased.
  • the solder resist layer 112 is not formed on the entire surface, and a non-formation portion is provided. That is, the formation area of the solder resist having a high coefficient of thermal expansion is limited to an indispensable area. For this reason, it is possible to reduce the warpage of the substrate.
  • FIG. 5F is a schematic cross-sectional view of a multilayer wiring board 600 using the electronic component built-in wiring board 1 of FIG. 4F as a core substrate. A method of manufacturing the multilayer wiring board 600 will be briefly described with reference to FIGS. 5A to 5E.
  • a sheet-like plate material obtained by impregnating a reinforcing material such as glass cloth with a resin (in this embodiment, Prepreg), and further, a rolled copper foil or an electrolytic copper foil is placed thereon and thermocompression bonded.
  • insulating layers 601 and 602 having a thickness of about 40 ⁇ m and copper foils 610 and 611 having a thickness of about 12 ⁇ m are formed (see FIG. 5A).
  • the amount of resin pushed away by the first outer layer through-hole land 93 and the second outer layer through-hole land 94 and the amount of resin entering the inside (cavity) of the through-hole conductor 90 are offset. Accordingly, the surfaces of the insulating layers 601 and 602 are planarized.
  • laser vias (blind holes) 612 and 613 are formed at predetermined positions on both main surfaces of the substrate of FIG. 5A by a carbon dioxide (CO 2 ) laser, a UV-YAG laser, or the like (see FIG. 5B).
  • CO 2 carbon dioxide
  • UV-YAG laser UV-YAG laser
  • electroless copper plating is performed on the entire surface to form a copper plating layer 620 on both main surfaces and on the inner surfaces of the laser vias 612 and 613 (see FIG. 5C).
  • plating resist layers 621 and 622 see FIG. 5D
  • electrolytic copper plating is performed to form vias 603 and 604 and copper plating layers 614 and 615 (see FIG. 5E).
  • the plating resist layers 621 and 622 are removed, and unnecessary copper foils 610 and 611 on both main surfaces and the copper plating layer 620 are removed by etching, whereby conductor patterns 605 and 606 are formed.
  • multilayer wiring board 600 is obtained (see FIG. 5F).
  • the formation mode of the solder resist layer 112 is not limited to that shown in FIG.
  • the opening 61 of the solder resist layer 112 may have a rectangular frame shape as shown in FIG.
  • the area between the pads 81 may be covered with a solder resist layer 112 as shown in FIG. 8, or at the center of the area corresponding to the circuit formation surface of the electronic component 2 as shown in FIG. A non-forming region may be provided.
  • the surface of the conductor pattern layer is subjected to surface roughening such as blackening treatment or chemical etching treatment (CZ treatment) before the formation of the solder resist layer. May be roughened.
  • the insulating layers 601 and 602 and the conductor patterns 605 and 606 are laminated on each main surface of the electronic component built-in wiring board 1, respectively. It is not limited to the configuration. That is, two or more layers may be laminated, or the number of laminations may be different on both main surfaces. Furthermore, you may laminate
  • the technology according to the present invention can be widely applied to wiring boards that house electronic components therein.

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Abstract

 この電子部品内蔵配線板(1)は、導体パターン層(40)と、導体パターン層(40)に設けられ、フリップチップ実装する電子部品(2)と電気的に接合する接続端子(80)と、導体パターン層(40)上に形成されたソルダーレジスト層(112)と、を備える。そして、このソルダーレジスト層(112)は、導体パターン層(40)上における接続端子(80)の周囲に形成され、導体パターン層(40)上におけるその他の少なくとも一部の領域には形成されていない。このため、接続端子(80)が保護され、導体間の絶縁性が確保される。さらに、ソルダーレジスト層(112)が導体パターン層(40)上の全面に形成されていないため、基板の反りを低減させることが可能となる。

Description

電子部品内蔵配線板及びその製造方法
 本発明は、半導体素子等の電子部品を内部に収容した電子部品内蔵配線板に関する。
 近年、電子機器の高性能化、小型化が進展し、それと共に、電子機器の内部に実装される配線板の高機能化、高集積化の要請は益々高くなってきている。
 これに対し、ICチップ等の電子部品を配線板内に収容する(内蔵する)技術が種々提案されている(例えば、特許文献1で開示される多層配線基板など)。
 特許文献1で開示されるように、電子部品を配線板に内蔵することにより、多層配線板の高機能化と高密度化とが可能となる。つまり、電子部品を内部に収納することで、表層の実装領域に他の電子部品等を実装することが可能となり、高機能化が可能となる。
 また、電子部品を内蔵することにより、多層配線板自体を小さくすることも可能となり、従来の多層配線板と比較して、回路を高密度化することができる。さらに、配線長を減少させ得るため、性能向上も期待できる。
特開2004-7006号公報
 ところで、配線板の製造プロセスにおいて、半田の付着防止、導体間の絶縁性の維持、導体の保護などの目的から、形成した導体パターン上にソルダーレジストをコーティングすることは周知である。特に、ファインピッチ化のため、内蔵される電子部品と電気的に接続させるための接続端子を含む導体パターン層は、ソルダーレジストで保護されるのが望ましい。
 一方、ソルダーレジストを構成する材料(絶縁性樹脂)の熱膨張率は、導体パターンを構成する金属の熱膨張率より高い。したがって、上記の接続端子が形成された導体パターン層において、全面にソルダーレジストが形成されると、両者の熱膨張率の違いから配線板に反りが発生してしまうおそれがある。
 本発明は、上記従来の問題に鑑みてなされたものであり、ファインピッチ化が図れると共に、反りの発生を防止でき、接続信頼性等の品質に優れる電子部品内蔵配線板及びその製造方法を提供することを目的とする。
 本発明に係る電子部品内蔵配線板は、
 電子部品をフリップチップ実装にて内蔵した電子部品内蔵配線板であって、
 導体パターン層と、
 該導体パターン層に設けられ、前記電子部品と電気的に接合する接続端子と、
 前記導体パターン層上に形成されたソルダーレジスト層と、を備え、
 前記ソルダーレジスト層は、前記導体パターン層上における前記接続端子の周囲に形成され、前記導体パターン層上におけるその他の少なくとも一部の領域には、形成されていない、ことを特徴とする。
 好ましくは、前記接続端子は、前記導体パターン層と異なる金属で前記導体パターン層上に形成される接合層を含む。
 前記接合層は半田で構成されていてもよい。
 好ましくは、前記ソルダーレジスト層は、前記導体パターン層における前記接続端子の形成領域の少なくとも一部分を覆っている。
 好ましくは、前記電子部品は絶縁材で覆われており、該絶縁材にはスルーホール導体が形成されている。
 この場合、前記導体パターン層は、前記絶縁材の表面から突出しない状態で形成されていてもよい。
 前記導体パターン層の表面が粗化されていてもよい。
 また、本発明に係る電子部品内蔵配線板の製造方法は、
 支持体上に金属箔が配置された積層基材における前記金属箔上に、導体パターン層を形成する工程と、
 前記導体パターン層上の一部の領域に、所定の開口部を設けたソルダーレジスト層を形成する工程と、
 前記ソルダーレジスト層の開口部に対応する前記導体パターン層上に接合層を設けることで、接続端子を形成する工程と、
 前記積層基材上に、前記電子部品を該電子部品の回路形成面と前記接続端子の形成面とが向かい合うように配置し、前記電子部品と前記接続端子とを電気的に接続する工程と、
 前記実装後の電子部品を絶縁材で被覆する工程と、
 前記支持体を除去する工程と、
 露出している前記金属箔を除去する工程と、を有する、ことを特徴とする。
 前記接合層は前記導体パターン層と異なる金属からなるのが好ましい。
 この場合、前記接合層を半田で形成してもよい。
 前記電子部品を前記絶縁材で被覆した後、前記絶縁材に貫通孔を設け、スルーホール導体を形成する工程をさらに有してもよい。
 前記導体パターン層を電解めっきで形成してもよい。
 前記導体パターン層の形成後、前記ソルダーレジスト層を形成する前に、前記導体パターン層の表面を粗化する工程をさらに有してもよい。
 前記電子部品の実装後、前記接続端子の周りに絶縁性樹脂を充填する工程をさらに有してもよい。
 また、上記両発明において、前記電子部品には、前記接続端子と接合させるためのバンプが形成されていることが望ましい。その場合、前記バンプは、回路形成面に格子状に配置(いわゆる、エリアアレイ型)されていてもよいし、回路形成面の端部に配置(いわゆる、ペリフェラル型)されていてもよい。
 本発明によれば、ファインピッチ化が図れると共に、反りの発生を防止でき、接続信頼性等の品質に優れる電子部品内蔵配線板を提供できる。
支持基材の構成を示す断面図である。 支持基材に第1の下地層及び第2の下地層が形成された様子を示す断面図である。 図1Bの基板に感光性レジストがラミネートされた様子を示す断面図である。 図1Bの基板にめっきレジスト層が形成された様子を示す断面図である。 図1Dの基板に銅めっき層が形成された様子を示す断面図である。 図1Eの基板からめっきレジスト層が剥離された後の様子を示す断面図である。 図1Fの基板にソルダーレジスト層が形成された様子を示す断面図である。 図1Gの基板に接合層が形成された様子を示す断面図である。 電子部品の実装工程を示す断面図である。 アンダーフィル材充填後の様子を示す断面図である。 積層工程を示す断面図(その1)である。 積層工程を示す断面図(その2)である。 積層工程を示す断面図(その3)である。 図3Cの基板からキャリアを剥離した後の様子を示す断面図である。 図4Aの基板に貫通孔が形成された様子を示す断面図である。 図4Bの基板に無電解銅めっきを施した後の様子を示す断面図である。 図4Cの基板にめっきレジスト層が形成された様子を示す断面図である。 図4Dの基板に銅めっき膜及びスルーホール導体が形成された様子を示す断面図である。 本発明の一実施形態に係る電子部品内蔵配線板の構成を示す断面図である 図4Fの電子部品内蔵配線板から多層配線板を製造する工程を示す断面図である(その1)。 図4Fの電子部品内蔵配線板から多層配線板を製造する工程を示す断面図である(その2)。 図4Fの電子部品内蔵配線板から多層配線板を製造する工程を示す断面図である(その3)。 図4Fの電子部品内蔵配線板から多層配線板を製造する工程を示す断面図である(その4)。 図4Fの電子部品内蔵配線板から多層配線板を製造する工程を示す断面図である(その5)。 図4Fの電子部品内蔵配線板を使用した多層配線板の構成を示す断面図である。 本実施形態におけるソルダーレジスト層の形成態様を説明するための平面図である。 他の実施形態におけるソルダーレジスト層の形成態様を説明するための平面図(その1)である。 他の実施形態におけるソルダーレジスト層の形成態様を説明するための平面図である(その2)。 他の実施形態におけるソルダーレジスト層の形成態様を説明するための平面図である(その3)。
符号の説明
 1  電子部品内蔵配線板
 2  電子部品
 3  絶縁材
 4  アンダーフィル材
 5  充填樹脂
 20 バンプ
 40、50、60、70 導体パターン
 80 接続端子
 81 パッド
 82 接合層
 90 スルーホール導体
 91 第1の内層のスルーホールランド
 92 第2の内層のスルーホールランド
 93 第1の外層のスルーホールランド
 94 第2の外層のスルーホールランド
 112 ソルダーレジスト層
 以下、本発明の実施形態に係る電子部品内蔵配線板及びその製造方法について、図面を参照して説明する。
 図4Fは、本実施形態に係る電子部品内蔵配線板1の概略断面図である。この電子部品内蔵配線板1は、例えば、多層プリント配線板のコア基板等として使用される。
 電子部品内蔵配線板1は、電子部品2と、絶縁材3と、アンダーフィル材4と、充填樹脂5と、内層の導体パターン40、50と、ソルダーレジスト層112と、外層の導体パターン60、70と、接続端子80と、スルーホール導体90と、からなる。
 電子部品2は、フリップチップであり、エリアアレイ型に配列した複数のバンプ20を有している。バンプ20は、例えば、厚さ約30μmの金スタッドバンプである。
 絶縁材3は、ガラス繊維、アラミド繊維等の補強材にエポキシ樹脂、ポリエステル樹脂、ポリイミド樹脂、ビスマレイミド‐トリアジン樹脂(BT樹脂)、フェノール樹脂等の樹脂を含浸させてなる板材であり、本実施形態では、プリプレグで構成される。
 アンダーフィル材4は、例えば、シリカやアルミナ等の無機フィラーを含む絶縁性樹脂であり、電子部品2の固定強度を確保すると共に、電子部品2と絶縁材(例えば、絶縁材3や充填樹脂5)との熱膨張率のギャップによって発生する歪みを吸収する役割を担う。 アンダーフィル材4は、熱硬化性樹脂と40~90wt%の無機フィラーからなることが好ましい。また、フィラーのサイズ(平均粒径)は0.1~3.0μmであることが好ましい。
 充填樹脂5は、熱硬化性樹脂と無機フィラーとからなることが好ましい。無機フィラーには、たとえば、Al、MgO、BN、AlNまたはSiOなどを用いることができる。熱硬化性樹脂には、たとえば、耐熱性が高いエポキシ樹脂、フェノール樹脂またはシアネート樹脂が好ましく、この中でも、耐熱性が優れるエポキシ樹脂が特に好ましい。
 ソルダーレジスト層112は、例えば、アクリル-エポキシ系樹脂を用いた感光性樹脂、エポキシ樹脂を主体とした熱硬化性樹脂、紫外線硬化型の樹脂等を材料として、スクリーン印刷、スプレーコーティング、ロールコーティング等で形成することができる。あるいは、アクリル-エポキシ系樹脂を用いた感光性ドライフィルムを真空ラミネート等することで形成してもよい。
 銅等からなる導体パターン40は、電子部品内蔵配線板1の第1面側(電子部品2の回路形成面と対向する側)の内部(以下、第1の内層という。)に形成されている。導体パターン40の厚みは約15μmである。導体パターン40の一部は、接続端子80を構成するパッド81やスルーホール導体90に接続している第1の内層のスルーホールランド91として使用される。
 銅等からなる導体パターン50は、電子部品内蔵配線板1の第2面(第1面と反対側の主面)の内側(以下、第2の内層という。)に形成され、その一部が、スルーホール導体90に接続している第2の内層のスルーホールランド92となる。導体パターン50の厚さは、約15μmである。第1の内層のスルーホールランド91と第2の内層のスルーホールランド92は、スルーホール導体90を介して電気的に接続している。
 銅等からなる導体パターン60は、電子部品内蔵配線板1の第1面上(以下、第1の外層という。)に形成されていて、その一部が、スルーホール導体90に接続している第1の外層のスルーホールランド93となる。導体パターン60の厚さは、約20μmである。
 銅等からなる導体パターン70は、電子部品内蔵配線板1の第2面上(以下、第2の外層という。)に形成されていて、その一部が、スルーホール導体90に接続している第2の外層のスルーホールランド94となる。導体パターン70の厚さは、約20μmである。
 接続端子80は、電子部品2のバンプ20と電気的に接続するための端子であり、パッド81と、接合層82とから構成される。パッド81の厚さは約15μmであり、接合層82の厚さは約15μmである。
 接合層82は、パッド81上(即ち、導体パターン40上)にパッド81とは異なる金属で形成される。例えば、半田、錫、ニッケル、金などの金属、あるいは、それらの合金などを用いた電解めっき等により接合層82を形成してもよいし、半田ペーストを印刷し、リフローを行うことで形成してもよい。あるいは、これらを組み合わせることで、接合層82を複数の層で構成してもよい。但し、接合層82の最表層部は半田からなることが好ましい。
 以上にように構成される電子部品内蔵配線板1は、ソルダーレジスト層112が導体パターン層の全面ではなく部分的に形成されている点に特徴を有する。以下、図1A~図4Eを参照して、電子部品内蔵配線板1の製造方法を説明する。
(1)接続端子80の形成工程(図1A~図1H)
 先ず、図1Aに示す支持基材100を準備する。支持基材100は、銅箔101と、銅からなるキャリア102とを接着剤(剥離層)を使って剥離(分離)可能に接着した、いわゆるキャリア付き銅箔である。ここで、銅箔101の厚さは、約5μmであり、キャリア102の厚さは、約70μmである。なお、キャリア102として、銅に限らず、絶縁材なども採用できる。
 次に、支持基材100の銅箔101上に、電子部品2を実装するための接続端子80をアディティブ法を用いて形成する。
 なお、接続端子80をアディティブ法で形成する前に、図1Bに示すように、第1の下地層110として、ニッケル等の金属を、無電解めっき、電解めっき、スパッタリング等の方法で支持基材100の銅箔101上の全面に厚さが約1μmとなるように形成する。 これによって、エッチングによる侵食を防止でき、ファインパターンを形成することができる。
 また、本実施形態のように、ソルダーレジスト層112を形成する場合には、図1Bに示すように、第2の下地層111として、チタン等の金属を、無電解めっき、スパッタリング等の方法で第1の下地層110上の全面に厚さが約0.1μmとなるように形成する。これによってソルダーレジスト層112との密着性が向上するという効果が得られる。
 ここで、アディティブ法とは、めっきレジストパターンの非形成部分にめっきを成長させた後、めっきレジストを除去することにより導体パターンを形成する手法をいう。
 以下、このアディティブ法を用いた接続端子80の形成について、具体的に説明する。
 図1Bの基板の第2の下地層111上にドライフィルム状の感光性レジスト103をラミネートする(図1C参照)。そして、ラミネートした感光性レジスト103にマスクフィルムを密着させ、紫外線で露光し、アルカリ水溶液で現像する。その結果、導体パターン40に相当する部分のみが開口しためっきレジスト層104が形成される(図1D参照)。
 続いて、図1Dの基板を水洗し、乾燥させた後、電解銅めっきを行い、厚さ約15μmの銅めっき層105を形成する(図1E参照)。
 そして、めっきレジスト層104を剥離することで、導体パターン40及びパッド81が形成された基板(図1F参照)が得られる。
 それから、図1Fの基板表面に、液状又はドライフィルム状の感光性レジスト(ソルダーレジスト)を塗布又はラミネートして、厚さ約20μmのソルダーレジスト層を形成する。そして、所定のパターンが形成されたマスクフィルムをソルダーレジスト層の表面に密着させ、紫外線で露光し、アルカリ水溶液で現像する。
 その結果、図1Fの基板表面にソルダーレジスト層112が形成される(図1G参照)。図6は、図1Gの基板の一部分を示す平面図である。図6に示すように、ソルダーレジスト層112は、図1Gの基板表面における電子部品2の回路形成面に対応する領域に形成される。そして、ソルダーレジスト層112には、各パッド81の表面を露出させるための開口部61が複数設けられている。より厳密には、ソルダーレジスト層112の開口部61によって各パッド81の表面全域は露出されず、各パッド81上の少なくとも一部は、ソルダーレジスト層112で覆われている。
 続いて、パッド81上に接合層82を形成する(図1H参照)。本実施形態では、接合層82は、半田ペーストを印刷し、リフローを行うことで形成される。
 この際、上述したように、ソルダーレジスト層112がパッド81の周りに形成されているため、パッド81以外の部分への半田の流出を防止でき、パッド81上に均一で嵩高い接合層82を形成することが容易となる。
 以上のようにして、電子部品2のバンブ20と接合させるための接続端子80が得られる。
(2)電子部品2の実装工程(図2A、図2B)
 続いて、図1Hの基板上に電子部品2をフェースダウン方式にて載置し、電子部品2のバンプ20と接続端子80とを接合して、実装する(図2A参照)。
 上述したように、接合層82は、均一かつ嵩高く形成されているため、電子部品2のバンプ20と接続端子80との接続信頼性が確保できる。
 電子部品2の実装後、電子部品2と基板との間に生じる空隙に、アンダーフィル材4を充填する(図2B参照)。
 アンダーフィル材4は、上述したように、例えば、シリカやアルミナ等の無機フィラーを含む絶縁性樹脂である。
(3)積層工程(図3A~図3C)
 続いて、絶縁材30aと、絶縁材30bとを図2Bの基板における電子部品2の実装面上に載置する(図3A参照)。絶縁材30a、30bは、ガラス布等の補強材に樹脂を含浸させてなる板材(本実施形態では、プリプレグ)である。絶縁材30aは、電子部品2の形状に合わせてくり貫き加工が施されており、電子部品2をその実装面に対して平行な方向で囲むような態様で載置される。くり貫き加工には、打ち抜き加工法(パンチング)が好適である。尚、メカニカルドリルやレーザ等を用いてもよい。
 一方、絶縁材30bは、くり貫き加工が施されておらずシート状であり、絶縁材30a上及び電子部品2のバンプ20形成面と反対面上に載置される。
 絶縁材30a、30bの載置後、絶縁材30b上に、導体パターン50が形成された基板500を、導体パターン50の形成面を絶縁材30b側に向けて積層する(図3B、図3C参照)。この積層方式として、例えば、オートクレーブ方式やハイドロプレス方式等を用いることができる。
 基板500の製造方法について簡単に説明する。先ず、支持基材100と同様の構成の支持基材(厚さ約5μmの銅箔501と、厚さ約70μmのキャリア502とから構成される。)を準備する。そして、かかる支持基材上にドライフィルム状の感光性レジストをラミネートする。それから、ラミネートした感光性レジストに所定のパターンが形成されたマスクフィルムを密着させ、露光・現像することで、導体パターン50に相当する部分のみが開口しためっきレジスト層が形成される。
 そして、めっきレジスト層形成後の基板を水洗乾燥した後、電解ニッケルめっき等を行って、厚さ約1μmの下地層503を形成する。それから、さらに電解銅めっきを行い、下地層503上に、厚さ約15μmの銅めっき層を形成する。そして、めっきレジスト層を除去し、水洗乾燥すると、導体パターン50が形成された基板500が得られる。
 上記積層の際、加圧されることで、絶縁材30aと、絶縁材30bとが融合し、図3Cに示すように、絶縁材3が形成される。また、その際、絶縁材30a、30bから樹脂成分が流出し、電子部品2と、絶縁材30a、30bとの間に生じる空隙部が、充填樹脂5で充填される。
(4)後工程(図4A~図4E)
 続いて、図3Cの基板からキャリア102と、キャリア502とを剥離(分離)し、図4Aの基板を得る。そして、メカニカルドリル等を用いた既知の穴あけ工法により、図4Aの基板に貫通孔106をあける(図4B参照)。貫通孔106の形成後、図4Bの基板に無電解銅めっきを施し、両主面上および貫通孔106の内壁に銅めっき層113を形成する(図4C参照)。
 そして、図4Cの基板の両主面上に、ドライフィルム状の感光性レジストをラミネートし、該感光性レジストにマスクフィルムを密着させ、露光・現像を行う。そうすると、導体パターン60に相当する部分のみが開口しためっきレジスト層107と、導体パターン70に相当する部分のみが開口しためっきレジスト層108が形成される(図4D参照)。
 次に、図4Dの基板を水洗し、乾燥させた後、電解銅めっきを行い、めっきレジスト層107及び108を除去する。すると、図4Eに示すように、銅めっき膜109と、スルーホール導体90が形成される。そして、図4Eの基板の両主面上の不要な銅めっき層113、銅箔101及び銅箔501を銅を選択的にエッチングできるエッチング液を用いて除去する。続いて、ニッケル、チタン等の銅とは異なる金属を選択的にエッチングできるエッチング液を用いて、第1の下地層110及び第2の下地層111を除去する。
 これにより、導体パターン60(第1の外層のスルーホールランド93)と、導体パターン70(第2の外層のスルーホールランド94)とが形成された図4Fに示す電子部品内蔵配線板1が得られる。
 第1の下地層110及び第2の下地層111のエッチング除去の際、銅とは異なる金属を選択的にエッチングできるエッチング液を用いるため、導体パターン40はエッチングの影響を受けず保護される。
 さらに、パッド81は、ソルダーレジスト層112に埋設され、その表面から突出していないので、エッチング時のパターン細りが起きにくく、ファインパターンが維持できる。
 以上のようにして製造された電子部品内蔵配線板1は、以下のような優れた特徴を有する。
 (1)電子部品2を収容(内蔵)しているため、表層の実装領域に他の電子部品等を実装することが可能となり、高機能化が可能となる。また、内蔵する電子部品をフリップチップ実装することで、薄型化(小型化)が図れる。
 (2)また、(a)予め、支持基材100上に電子部品実装用の接続端子80を形成しておくこと、(b)支持基材100の厚みが大きい(約75μm)こと、(c)導体パターン40及び接続端子80をアディティブ法にて形成すること、等により、導体パターン40及び接続端子80をファインピッチ(例えば、50μm)で形成することが可能となる。また、支持基材100のキャリア102は、剥離により容易に除去されるため、不要の金属層を除去する際、接続端子80に加わるおそれのあるダメージを極力低減できる。さらに、形成した接続端子80及び導体パターン40は、後工程においてエッチング等されないため、形成時のパターン形状が保持される。したがって、パターン精度の向上が図れる。
 (3)また、収容される電子部品2は、アンダーフィル材4、絶縁材3により、被覆され、封止されているため、固定強度が高い。このため、電子部品内蔵配線板1をコア基板としたビルトアップ等の多層化工程において、ハンドリングが容易となり、また、エッチング等が行われても、電子部品2に与える影響を極力防止できる。
 (4)また、電子部品内蔵配線板1は、絶縁材料(アンダーフィル材4及び絶縁材3)が、電子部品2をその実装面における下方向及び上方向で挟み込んだ態様の構造(対称構造)を有している。かかる対称構造にすると、ストレス(熱、振動衝撃、落下衝撃等)による応力が緩和でき、反りに対する耐性が確保できる。
 さらに、電子部品内蔵配線板1の第1面上及び第2面上に、それぞれ、導体パターン60及び導体パターン70が形成されているため、反りに対する耐性はより一層高いものとなる。
 (5)また、導体パターン40の形成層において、接続端子80の周りをソルダーレジスト層112でコーティングしているため、不必要な部分に半田が付かず、接続端子80が保護され、導体間の絶縁性が確保される。さらに、導体パターン40の形成層において、ソルダーレジスト層112が全面に形成されておらず、非形成部が設けられている。つまり、熱膨張率の高いソルダーレジストの形成領域を必要不可欠な領域のみに制限している。このため、基板の反りを低減させることが可能となる。
 図5Fは、図4Fの電子部品内蔵配線板1をコア基板として使用した多層配線板600の概略断面図である。この多層配線板600の製造方法について、図5A~図5Eを参照して簡単に説明する。
 先ず、図4Fの電子部品内蔵配線板1の両主面上(第1面及び第2面上)に、ガラス布等の補強材に樹脂を含浸させてなるシート状の板材(本実施形態では、プリプレグ)を載置し、さらに、その上に圧延銅箔あるいは電解銅箔を載置し、加熱圧着する。その結果、厚さ約40μmの絶縁層601、602と、厚さ約12μmの銅箔610、611が形成される(図5A参照)。
 その際、第1の外層のスルーホールランド93及び第2の外層のスルーホールランド94によって押し退けられる樹脂量と、スルーホール導体90の内部(空洞)に入り込む樹脂量とが相殺される。したがって、絶縁層601及び602の表面は平坦化される。
 続いて、炭酸ガス(CO)レーザやUV-YAGレーザ等により、図5Aの基板の両主面の所定箇所にレーザバイア(ブラインドホール)612、613を形成する(図5B参照)。
 そして、図5Bの基板において、全面に無電解銅めっきを行って、両主面上並びにレーザバイア612及び613の内面に銅めっき層620を形成する(図5C参照)。
 それから、めっきレジスト層621、622を形成した後(図5D参照)、電解銅めっきを行い、バイア603、604と、銅めっき層614、615を形成する(図5E参照)。
 そして、図5Eの基板において、めっきレジスト層621、622を除去し、両主面上の不要な銅箔610、611と、銅めっき層620をエッチングして除去すると、導体パターン605、606が形成された多層配線板600が得られる(図5F参照)。
 尚、本発明は、上記実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更が可能である。
 例えば、ソルダーレジスト層112の形成態様は、図6に示すものに限られない。例えば、電子部品2のバンプ20が、ペリフェラル型に配列されている場合では、図7に示すように、ソルダーレジスト層112の開口部61を矩形枠状にしてもよい。
 この場合、図8に示すように、各パッド81間の領域をソルダーレジスト層112で覆ってもよいし、図9に示すように、電子部品2の回路形成面に対応する領域の中央部に非形成領域を設けてもよい。
 また、ソルダーレジスト層と導体パターン層との密着性を向上させるために、ソルダーレジスト層の形成前に、導体パターン層の表面を黒化処理、化学エッチング処理(CZ処理)等の表面粗化法によって、粗化してもよい。
 また、上記実施形態の多層配線板600は、電子部品内蔵配線板1の両主面に、絶縁層601、602と導体パターン605、606からなる層をそれぞれ1層ずつ積層しているが、かかる構成に限定されない。即ち、2層以上積層しても構わないし、両主面において、積層数が異なっていてもよい。さらには、片側の主面のみに積層してもよい。
 本出願は、2008年11月6日にされた、米国仮特許出願61/112035に基づく。本明細書中に、その明細書、特許請求の範囲、図面全体を参照して取り込むものとする。
 本発明に係る技術は、電子部品を内部に収容する配線板に広く適用可能である。

Claims (18)

  1.  電子部品をフリップチップ実装にて内蔵した電子部品内蔵配線板であって、
     導体パターン層と、
     該導体パターン層に設けられ、前記電子部品と電気的に接合する接続端子と、
     前記導体パターン層上に形成されたソルダーレジスト層と、を備え、
     前記ソルダーレジスト層は、前記導体パターン層上における前記接続端子の周囲に形成され、前記導体パターン層上におけるその他の少なくとも一部の領域には、形成されていない、
     ことを特徴とする電子部品内蔵配線板。
  2.  前記接続端子は、前記導体パターン層と異なる金属で前記導体パターン層上に形成される接合層を含む、
     ことを特徴とする請求項1に記載の電子部品内蔵配線板。
  3.  前記接合層は半田からなる、
     ことを特徴とする請求項2に記載の電子部品内蔵配線板。
  4.  前記ソルダーレジスト層は、前記導体パターン層における前記接続端子の形成領域の少なくとも一部分を覆っている、
     ことを特徴とする請求項1に記載の電子部品内蔵配線板。
  5.  前記電子部品は絶縁材で覆われており、該絶縁材にはスルーホール導体が形成されている、
     ことを特徴とする請求項1に記載の電子部品内蔵配線板。
  6.  前記導体パターン層は、前記絶縁材の表面から突出していない、
     ことを特徴とする請求項5に記載の電子部品内蔵配線板。
  7.  前記電子部品には、前記接続端子と接合させるためのバンプが形成されている、
     ことを特徴とする請求項1に記載の電子部品内蔵配線板。
  8.  前記導体パターン層の表面が粗化されている、
     ことを特徴とする請求項1に記載の電子部品内蔵配線板。
  9.  前記電子部品のバンプは、回路形成面の端部に配置されている、
     ことを特徴とする請求項7に記載の電子部品内蔵配線板。
  10.  支持体上に金属箔が配置された積層基材における前記金属箔上に、導体パターン層を形成する工程と、
     前記導体パターン層上の一部の領域に、所定の開口部を設けたソルダーレジスト層を形成する工程と、
     前記ソルダーレジスト層の開口部に対応する前記導体パターン層上に接合層を設けることで、接続端子を形成する工程と、
     前記積層基材上に、前記電子部品を該電子部品の回路形成面と前記接続端子の形成面とが向かい合うように配置し、前記電子部品と前記接続端子とを電気的に接続する工程と、
     前記実装後の電子部品を絶縁材で被覆する工程と、
     前記支持体を除去する工程と、
     露出している前記金属箔を除去する工程と、を有する、
     ことを特徴とする電子部品内蔵配線板の製造方法。
  11.  前記接合層は前記導体パターン層と異なる金属からなる、
     ことを特徴とする請求項10に記載の電子部品内蔵配線板の製造方法。
  12.  前記接合層は半田からなる、
     ことを特徴とする請求項11に記載の電子部品内蔵配線板の製造方法。
  13.  前記電子部品を前記絶縁材で被覆した後、前記絶縁材に貫通孔を設け、スルーホール導体を形成する工程をさらに有する、
     ことを特徴とする請求項10に記載の電子部品内蔵配線板の製造方法。
  14.  前記導体パターン層は、電解めっきにより形成される、
     ことを特徴とする請求項10に記載の電子部品内蔵配線板の製造方法。
  15.  前記電子部品には、前記接続端子と接合させるためのバンプが形成されている、
     ことを特徴とする請求項10に記載の電子部品内蔵配線板の製造方法。
  16.  前記導体パターン層の形成後、前記ソルダーレジスト層を形成する前に、前記導体パターン層の表面を粗化する工程をさらに有する、
     ことを特徴とする請求項10に記載の電子部品内蔵配線板の製造方法。
  17.  前記電子部品の実装後、前記接続端子の周りに絶縁性樹脂を充填する工程をさらに有する、
     ことを特徴とする請求項10に記載の電子部品内蔵配線板の製造方法。
  18.  前記電子部品のバンプは、回路形成面の端部に配置されている、
     ことを特徴とする請求項15に記載の電子部品内蔵配線板の製造方法。
PCT/JP2009/054585 2008-11-06 2009-03-10 電子部品内蔵配線板及びその製造方法 Ceased WO2010052942A1 (ja)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009032895A1 (de) 2009-07-10 2011-01-13 Chevita Tierarzneimittel-Gesellschaft M.B.H. Zusammensetzung und Verfahren zur Prävention und Behandlung von Feuerbrand
JP2012015504A (ja) * 2010-06-29 2012-01-19 General Electric Co <Ge> 集積回路パッケージの電気配線及びその製造方法
JPWO2014118917A1 (ja) * 2013-01-30 2017-01-26 株式会社メイコー 部品内蔵基板の製造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9570376B2 (en) 2010-06-29 2017-02-14 General Electric Company Electrical interconnect for an integrated circuit package and method of making same
US8643154B2 (en) * 2011-01-31 2014-02-04 Ibiden Co., Ltd. Semiconductor mounting device having multiple substrates connected via bumps
KR101144610B1 (ko) * 2011-08-02 2012-05-11 한국기계연구원 투명 전극의 전도성 메쉬 매설 방법
US8946072B2 (en) * 2012-02-02 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. No-flow underfill for package with interposer frame
JP5998792B2 (ja) 2012-09-21 2016-09-28 Tdk株式会社 半導体ic内蔵基板及びその製造方法
US8766461B1 (en) * 2013-01-16 2014-07-01 Texas Instruments Incorporated Substrate with bond fingers
US9659891B2 (en) * 2013-09-09 2017-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a boundary structure, a package on package structure, and a method of making
US9198278B2 (en) * 2014-02-25 2015-11-24 Motorola Solutions, Inc. Apparatus and method of miniaturizing the size of a printed circuit board
US10037941B2 (en) * 2014-12-12 2018-07-31 Qualcomm Incorporated Integrated device package comprising photo sensitive fill between a substrate and a die
US10475750B2 (en) * 2016-04-02 2019-11-12 Intel Corporation Systems, methods, and apparatuses for implementing an organic stiffener with an EMI shield for RF integration
WO2019154822A1 (en) 2018-02-06 2019-08-15 Bjoersell Sten Manufacture of electronic circuits

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148434A (ja) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp 電気部品実装基板の製造方法
JPH08242064A (ja) * 1995-03-01 1996-09-17 Ibiden Co Ltd プリント配線板
JP2002237682A (ja) * 2001-02-08 2002-08-23 Cmk Corp 部品実装用凹部を備えた多層プリント配線板及びその製造方法
JP2002261449A (ja) * 2000-12-27 2002-09-13 Matsushita Electric Ind Co Ltd 部品内蔵モジュール及びその製造方法
JP2002290051A (ja) * 2001-01-19 2002-10-04 Matsushita Electric Ind Co Ltd 部品内蔵モジュールとその製造方法
JP2006310421A (ja) * 2005-04-27 2006-11-09 Cmk Corp 部品内蔵型プリント配線板とその製造方法
WO2007034629A1 (ja) * 2005-09-20 2007-03-29 Murata Manufacturing Co., Ltd. 部品内蔵モジュールの製造方法および部品内蔵モジュール
JP2007214230A (ja) * 2006-02-08 2007-08-23 Cmk Corp プリント配線板

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127671U (ja) * 1985-01-29 1986-08-11
JPH0247087U (ja) * 1988-09-27 1990-03-30
JPH0268474U (ja) * 1988-11-15 1990-05-24
KR100855529B1 (ko) * 1998-09-03 2008-09-01 이비덴 가부시키가이샤 다층프린트배선판 및 그 제조방법
WO2001063991A1 (en) * 2000-02-25 2001-08-30 Ibiden Co., Ltd. Multilayer printed wiring board and method for producing multilayer printed wiring board
JP3916854B2 (ja) * 2000-06-28 2007-05-23 シャープ株式会社 配線基板、半導体装置およびパッケージスタック半導体装置
JP3709882B2 (ja) * 2003-07-22 2005-10-26 松下電器産業株式会社 回路モジュールとその製造方法
JP2005129663A (ja) * 2003-10-22 2005-05-19 Internatl Business Mach Corp <Ibm> 多層配線基板
US7640655B2 (en) * 2005-09-13 2010-01-05 Shinko Electric Industries Co., Ltd. Electronic component embedded board and its manufacturing method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148434A (ja) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp 電気部品実装基板の製造方法
JPH08242064A (ja) * 1995-03-01 1996-09-17 Ibiden Co Ltd プリント配線板
JP2002261449A (ja) * 2000-12-27 2002-09-13 Matsushita Electric Ind Co Ltd 部品内蔵モジュール及びその製造方法
JP2002290051A (ja) * 2001-01-19 2002-10-04 Matsushita Electric Ind Co Ltd 部品内蔵モジュールとその製造方法
JP2002237682A (ja) * 2001-02-08 2002-08-23 Cmk Corp 部品実装用凹部を備えた多層プリント配線板及びその製造方法
JP2006310421A (ja) * 2005-04-27 2006-11-09 Cmk Corp 部品内蔵型プリント配線板とその製造方法
WO2007034629A1 (ja) * 2005-09-20 2007-03-29 Murata Manufacturing Co., Ltd. 部品内蔵モジュールの製造方法および部品内蔵モジュール
JP2007214230A (ja) * 2006-02-08 2007-08-23 Cmk Corp プリント配線板

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009032895A1 (de) 2009-07-10 2011-01-13 Chevita Tierarzneimittel-Gesellschaft M.B.H. Zusammensetzung und Verfahren zur Prävention und Behandlung von Feuerbrand
JP2012015504A (ja) * 2010-06-29 2012-01-19 General Electric Co <Ge> 集積回路パッケージの電気配線及びその製造方法
KR101846545B1 (ko) 2010-06-29 2018-04-06 제너럴 일렉트릭 캄파니 인터커넥트 조립체
JPWO2014118917A1 (ja) * 2013-01-30 2017-01-26 株式会社メイコー 部品内蔵基板の製造方法

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