[go: up one dir, main page]

WO2009133759A1 - Procédé de nettoyage d’un appareil d’exposition aux uv extrêmes - Google Patents

Procédé de nettoyage d’un appareil d’exposition aux uv extrêmes Download PDF

Info

Publication number
WO2009133759A1
WO2009133759A1 PCT/JP2009/057249 JP2009057249W WO2009133759A1 WO 2009133759 A1 WO2009133759 A1 WO 2009133759A1 JP 2009057249 W JP2009057249 W JP 2009057249W WO 2009133759 A1 WO2009133759 A1 WO 2009133759A1
Authority
WO
WIPO (PCT)
Prior art keywords
hydrogen
exposure apparatus
euv exposure
cleaning
molybdenum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2009/057249
Other languages
English (en)
Japanese (ja)
Inventor
亮 和泉
昌美 井田
一樹 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyushu Institute of Technology NUC
Original Assignee
Kyushu Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyushu Institute of Technology NUC filed Critical Kyushu Institute of Technology NUC
Publication of WO2009133759A1 publication Critical patent/WO2009133759A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Definitions

  • the present invention relates to a method for cleaning an EUV exposure apparatus for performing EUV (Extreme Ultra Violet) lithography.
  • the atomic hydrogen was generated by catalytic cracking reaction by contacting a peeling gas containing hydrogen atoms and hydrogen molecules with a heated high melting point catalyst such as tungsten, and used for semiconductor production.
  • a heated high melting point catalyst such as tungsten
  • the EUV exposure apparatus for performing the EUV lithography is generally used in a vacuum state.
  • the contamination of the optical element with carbon is a problem.
  • the exposure apparatus often contains a residual gas containing an organic compound caused by oil or lubricant of a vacuum pump.
  • a wafer coated with a photoresist is introduced into the vacuum chamber of the apparatus.
  • ultra-short ultraviolet rays are irradiated here, the solvent remaining in the apparatus evaporates, or the resin constituting the photoresist. Is decomposed and desorbed, so that a gas containing an organic compound is released into the apparatus.
  • the gas molecules containing the organic compound adhere as foreign matters to various interfaces of the EUV exposure apparatus.
  • foreign matter caused by a plasma generation source using a tin raw material or the like used for generating EUV radiation may adhere to the exposure apparatus.
  • the methods and means using hydrogen radicals, halogen molecules, etc. proposed so far (for example, Patent Document 3 or 4). There is a problem that is not always sufficient.
  • the EUV exposure optical system is an ultra-high precision precision instrument optical system adjusted to the order of nm in a vacuum atmosphere, and requires precise temperature management. Therefore, even when cleaning with hydrogen radicals is performed, it must be performed at as low a temperature as possible, but such consideration has not been made in the prior art.
  • An object of the present invention is to provide a method for cleaning an EUV exposure apparatus without damage or with low damage.
  • the temperature of the heated metal catalyst body that generates hydrogen radicals or the like is lowered as much as possible in order not to damage the EUV exposure apparatus system or to minimize the extent of damage. There is a need.
  • the temperature of the metal catalyst body is preferably high. Accordingly, the present inventors have solved the above-mentioned conflicting technical matters, and have earnestly studied a method for generating hydrogen radicals at high temperature and high density at a low temperature as much as possible. is there.
  • the present invention relates to a method for cleaning an EUV exposure apparatus to which foreign matter has adhered using hydrogen radicals, obtained by contacting a hydrogen molecule-containing gas with molybdenum or a molybdenum alloy heated to 1000 to 1600 ° C., and hydrogen radicals
  • the EUV exposure apparatus cleaning method is characterized in that a hydrogen radical-containing gas having a density of 1 ⁇ 10 9 to 1 ⁇ 10 16 / cm 3 is used.
  • EUV means light having a wavelength of about 150 nm or less or soft X-ray.
  • the EUV exposure apparatus is a member such as a lens, a mirror, a mask, an EUV generation source, other accessories, and a material such as a resist used in addition to an exposure apparatus for performing EUV lithography. It means the whole including.
  • Patent Document 2 as a resist stripping method that simplifies the step of stripping the resist, or a resist stripping method that cleans the base layer at the same time as stripping the resist, a heated refractory catalyst body, a hydrogen atom, A method is described in which atomic hydrogen is generated by a catalytic decomposition reaction with a stripping gas containing hydrogen molecules, the generated atomic hydrogen is brought into contact with the resist, and the resist is stripped in a gas phase. And as a refractory metal (catalyst body), 1 type of metal selected from the metal group which consists of tungsten, tantalum, molybdenum, vanadium, platinum, and thorium, or 2 or more types of metals selected from the said metal group are included. Alloys are mentioned.
  • a silicon substrate on which a positive resist having a thickness of about 1 ⁇ m is formed by a resist removal apparatus is applied to a tungsten wire (high melting point) with a hydrogen flow rate of 100 sccm (standard cubic centimeter per minutes) and a diameter of 0.5 mm. It is only described that the catalyst body was stripped for 30 minutes at a tungsten temperature of about 1700 ° C.
  • the density of hydrogen radicals effective for cleaning an EUV exposure apparatus at a temperature lower by 300 ° C. or more than that of tungsten is 1 ⁇ 10 9 to 1 ⁇ .
  • the present invention provides a metal catalyst body capable of generating hydrogen radicals as dense as possible at as low a temperature as possible from the viewpoint of providing a method for efficiently and effectively cleaning an EUV exposure apparatus without damage or low damage.
  • the known high-temperature catalyst body made of tungsten is not simply replaced with molybdenum.
  • the EUV exposure apparatus is cleaned using a hydrogen radical-containing gas having a high hydrogen radical density at a temperature of 1000 to 1600 ° C., which is lower than the temperature in the prior art. Cleaning can be performed efficiently and effectively with low damage.
  • FIG. 1 It is a schematic diagram of an EUV exposure apparatus equipped with a hydrogen radical generator used in the cleaning method of the present invention. It is a figure which shows the relationship between the temperature of each metal catalyst body, and the density of the generated hydrogen radical.
  • the present invention relates to a hydrogen radical obtained by contacting a hydrogen-containing gas with heated molybdenum or a molybdenum alloy in a method for cleaning an EUV exposure apparatus to which organic and / or inorganic foreign matter has adhered using hydrogen radicals.
  • the contained gas is used.
  • the hydrogen radical means atomic hydrogen
  • the hydrogen-containing gas may be a pure hydrogen molecular gas or a mixed gas with an inert gas other than hydrogen molecules.
  • atomic hydrogen or hydrogen ions may be included.
  • the molybdenum alloy means an alloy composed mainly of molybdenum and one or more other metals.
  • EUV in the present invention means light having a wavelength of about 150 nm or less or soft X-ray, and the EUV exposure apparatus of the present invention performs lithography using such EUV.
  • the density of hydrogen radicals obtained by contacting a hydrogen-containing gas as described above with molybdenum or a molybdenum alloy heated to 1000 to 1600 ° C., preferably 1000 to 1400 ° C. is 1 ⁇ 10 9 to 1
  • a hydrogen radical-containing gas in the range of ⁇ 10 16 / cm 3 , preferably in the range of 1 ⁇ 10 9 to 1 ⁇ 10 15 / cm 3 is used.
  • a means for cleaning is attached to the EUV exposure apparatus. That is, an exposure apparatus for EUV lithography, in order to clean the apparatus to which foreign matter has adhered using hydrogen radicals, the apparatus includes a hydrogen-containing gas introduction part, a catalyst body made of molybdenum or a molybdenum alloy, This is an EUV exposure apparatus equipped with a hydrogen radical generator (generation unit) comprising a shutter.
  • a hydrogen radical generator generation unit
  • FIG. 1 is a schematic view of an example of an EUV exposure apparatus for explaining the cleaning method of the present invention. Since decomposition cleaning of the EUV exposure apparatus is virtually impossible, industrially, as shown in FIG. 1, a hydrogen radical generator or cleaning device (in FIG. 1, a hydrogen-containing gas introduction part 2 and a heated metal) A catalyst body (molybdenum wire) 4 and a portion composed of a shutter 5) are used by being attached to an EUV exposure apparatus. At that time, in order to further reduce the temperature rise and to create a light source passage, it is preferable to install the cleaning object and the hydrogen radical generator separately as described later.
  • a hydrogen radical generator or cleaning device in FIG. 1, a hydrogen-containing gas introduction part 2 and a heated metal
  • a catalyst body (molybdenum wire) 4 and a portion composed of a shutter 5) are used by being attached to an EUV exposure apparatus. At that time, in order to further reduce the temperature rise and to create a light source passage, it is preferable to install the cleaning object and the hydrogen radical generator
  • 1 is a vacuum chamber
  • 2 is a hydrogen-containing gas introduction unit
  • 3 is a gas exhaust unit comprising a vacuum pump and a control valve
  • 4 is a heated metal catalyst body (molybdenum wire)
  • 5 is a shutter
  • 5 constitutes a hydrogen radical generator.
  • a metal catalyst body heating part for heating the molybdenum wire 4 is also necessary, but this is not shown.
  • Reference numeral 6 denotes a substrate holding unit for holding a substrate with resist (not shown).
  • 7 is an EUV (ultrashort ultraviolet) light source
  • 8 is a hydrogen radical monitor.
  • a twin black circle 9 schematically represents molecular hydrogen
  • a single black circle 10 schematically represents a hydrogen radical.
  • the gas exhaust unit can also be used as an exhaust system of the exposure apparatus. Further, it is not necessary to provide a radical monitor for measuring hydrogen radicals.
  • a mass flow controller is installed in the introduction part 2 of the hydrogen-containing gas, the generation rate of hydrogen radicals can be controlled. Therefore, it is preferable to install a flow rate control device such as a mass flow controller in the gas introduction part.
  • a conductance control valve is installed in the gas exhaust unit 3, the gas pressure in the vacuum chamber 1 can be controlled. Therefore, it is preferable to install a gas pressure control device such as a conductance control valve in the gas exhaust unit 3. Or you may make it control the gas pressure in the vacuum chamber 1 using the vacuum pump etc. which can control exhaust speed.
  • the molybdenum wire 4 of the hydrogen radical generator (4 and 5) needs to be held insulated from the surroundings.
  • the diameter of the molybdenum wire 4 is preferably in the range of 0.3 to 0.8 mm. Further, in order to make the removal rate of foreign matters by cleaning uniform, it is preferable to keep the temperature of the molybdenum wire 4 constant. Therefore, it is preferable that the temperature of the molybdenum wire 4 is configured to be monitored and feedback controlled.
  • the shutter 5 shown in FIG. 1 is a partition wall having pores provided between a metal catalyst body that generates hydrogen radicals and a resist-coated substrate, and suppresses contamination of the resist-coated substrate surface due to evaporation of the metal catalyst body. And it has the effect
  • a metal catalyst body is disposed in the vacuum chamber 1, it is preferable to use such a shutter.
  • a hydrogen radical generator (generated by a hydrogen-containing gas introduction part, a catalyst body made of molybdenum or a molybdenum alloy, and a shutter, which is separate from the vacuum chamber but connected thereto) Part), and a gas containing hydrogen radicals generated by the generator (generator) may be introduced into the vacuum chamber (see FIG. 1).
  • the temperature of the molybdenum wire 4 can be measured from the outside of the vacuum chamber via a view port installed in the vacuum chamber 1 by a radiation thermometer, for example (not shown).
  • the hydrogen-containing gas supplied to the gas introduction unit 2 is brought into contact with the molybdenum wire 4 heated to 1000 to 1600 ° C., and the density of hydrogen radicals is 1 ⁇ 10 9 to 1.
  • a hydrogen radical-containing gas in the range of ⁇ 10 16 / cm 3 can be generated.
  • Metal catalyst bodies include tungsten (W), tantalum (Ta), molybdenum (Mo), manganin (Mn 12-15%, Ni 2-4%, Cu 80-85%), nickel (Ni), 5% rhenium. -Tungsten (Re5%, W95%) and platinum (Pt) were used.
  • EUV was irradiated from the light source 7 and hydrogen radicals generated by the radical detector 8 were measured.
  • the measurement conditions for hydrogen radicals were an absorption length of 250 mm, a measurement wavelength of 121.9 nm, a reference time of 3 minutes, a gas pressure in the vacuum chamber of 1.9 Pa, and a hydrogen molecular gas flow rate of 50 sccm.
  • the input current was 5 to 13.5 A, and the input voltage was 8.37 to 33.0 V.
  • tungsten that has been conventionally used for lithographic cleaning is effectively used in processes that can be processed at high temperatures, but molybdenum generates hydrogen radicals more efficiently at lower temperatures.
  • molybdenum generates hydrogen radicals more efficiently at lower temperatures.
  • typically about 2 ⁇ 10 11 / cm 3 of hydrogen radicals can be generated at about 1250 ° C., which is about 300 ° C. lower than about 1550 ° C. in the case of molybdenum. That is, even when the metal catalyst body temperature was set to about 300 ° C. lower than that of tungsten, a hydrogen radical-containing gas having a hydrogen radical density equal to or higher than that of tungsten could be obtained.
  • a hydrogen radical-containing gas in the range of 1 ⁇ 10 9 to 1 ⁇ 10 13 / cm 3 can be generated stably.

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La présente invention concerne un procédé pour nettoyer un appareil d'exposition aux UV extrêmes auquel une matière étrangère adhère, par l'utilisation de radicaux hydrogène. Dans le procédé, on utilise un gaz contenant des radicaux hydrogène qui est obtenu par la mise en contact d'un gaz contenant de l'hydrogène avec du molybdène ou un alliage de molybdène qui est chauffé entre 1 000 et 1 600 °C, et ayant une densité de radicaux hydrogène allant de 1 × 109 à 1 × 1016 /cm3. Le procédé est capable de nettoyer efficacement un appareil d'exposition aux UV extrêmes en endommageant peu ou pas du tout l'appareil d'exposition aux UV extrêmes par l'utilisation d'un gaz contenant des radicaux hydrogène ayant une densité de radicaux hydrogène élevée à des températures relativement basses par rapport à des procédés de nettoyage classiques.
PCT/JP2009/057249 2008-05-01 2009-04-09 Procédé de nettoyage d’un appareil d’exposition aux uv extrêmes Ceased WO2009133759A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-119471 2008-05-01
JP2008119471 2008-05-01

Publications (1)

Publication Number Publication Date
WO2009133759A1 true WO2009133759A1 (fr) 2009-11-05

Family

ID=41254979

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/057249 Ceased WO2009133759A1 (fr) 2008-05-01 2009-04-09 Procédé de nettoyage d’un appareil d’exposition aux uv extrêmes

Country Status (1)

Country Link
WO (1) WO2009133759A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006136967A2 (fr) * 2005-06-21 2006-12-28 Philips Intellectual Property & Standards Gmbh Procede de nettoyage de surfaces optiques d'une unite d'irradiation par processus en deux etapes
JP2007165874A (ja) * 2005-12-08 2007-06-28 Asml Netherlands Bv リソグラフィ装置のためのラジカルクリーニング構成
JP2007184577A (ja) * 2005-12-22 2007-07-19 Asml Netherlands Bv リソグラフィ装置モジュールを浄化するための方法、リソグラフィ装置モジュールのための浄化構造および浄化構造を備えたリソグラフィ装置
JP2009016640A (ja) * 2007-07-06 2009-01-22 Ushio Inc 極端紫外光光源装置及び極端紫外光集光鏡のクリーニング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006136967A2 (fr) * 2005-06-21 2006-12-28 Philips Intellectual Property & Standards Gmbh Procede de nettoyage de surfaces optiques d'une unite d'irradiation par processus en deux etapes
JP2007165874A (ja) * 2005-12-08 2007-06-28 Asml Netherlands Bv リソグラフィ装置のためのラジカルクリーニング構成
JP2007184577A (ja) * 2005-12-22 2007-07-19 Asml Netherlands Bv リソグラフィ装置モジュールを浄化するための方法、リソグラフィ装置モジュールのための浄化構造および浄化構造を備えたリソグラフィ装置
JP2009016640A (ja) * 2007-07-06 2009-01-22 Ushio Inc 極端紫外光光源装置及び極端紫外光集光鏡のクリーニング方法

Similar Documents

Publication Publication Date Title
US9829803B2 (en) Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder
US7812330B2 (en) Radical cleaning arrangement for a lithographic apparatus
US10852649B2 (en) Methods and apparatus for removing contamination from lithographic tool
JP4573816B2 (ja) 光学エレメントの付着物を除去する方法および光学エレメントを保護する方法
JP6898867B2 (ja) 膜アセンブリを製造するための方法
JP2004207740A (ja) リソグラフィ投影装置の構成要素の表面を洗浄する方法、リソグラフィ投影装置、デバイス製造方法および洗浄システム
JP5111283B2 (ja) クリーニング方法
US11360384B2 (en) Method of fabricating and servicing a photomask
US12169357B2 (en) Method of fabricating and servicing a photomask
TWI873066B (zh) 用於形成材料之圖案化層的方法及裝置
EP2383613A2 (fr) Appareil de nettoyage et procédé de nettoyage
EP1735665A2 (fr) Nettoyage de miroirs multicouches
US8764905B1 (en) Cleaning organic residues from EUV optics and masks
US20160059272A1 (en) Cleaning Method And Composition In Photolithography
WO2009133759A1 (fr) Procédé de nettoyage d’un appareil d’exposition aux uv extrêmes
JP5269074B2 (ja) リソグラフィ露光装置用の炭化水素ゲッター
Hamamoto et al. Investigation of contamination removal from finished EUVL mask
JP2006245255A (ja) 露光装置、露光方法、および微細パターンを有するデバイスの製造方法
JP2004186614A (ja) 露光装置
JP2007157981A (ja) 露光装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09738696

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09738696

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP