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WO2009133076A3 - Cible de pulvérisation, procédé pour la fabrication d'une couche, en particulier d'une couche de tco (oxyde conducteur transparent) et procédé pour la fabrication d'une photopile à couche mince - Google Patents

Cible de pulvérisation, procédé pour la fabrication d'une couche, en particulier d'une couche de tco (oxyde conducteur transparent) et procédé pour la fabrication d'une photopile à couche mince Download PDF

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Publication number
WO2009133076A3
WO2009133076A3 PCT/EP2009/055075 EP2009055075W WO2009133076A3 WO 2009133076 A3 WO2009133076 A3 WO 2009133076A3 EP 2009055075 W EP2009055075 W EP 2009055075W WO 2009133076 A3 WO2009133076 A3 WO 2009133076A3
Authority
WO
WIPO (PCT)
Prior art keywords
target
deposition rate
zno
layer
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2009/055075
Other languages
English (en)
Other versions
WO2009133076A2 (fr
Inventor
Joachim Mueller
Daniel Severin
Markus Kress
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP08155495A external-priority patent/EP2116631A1/fr
Priority claimed from US12/112,692 external-priority patent/US20090272641A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2009133076A2 publication Critical patent/WO2009133076A2/fr
Publication of WO2009133076A3 publication Critical patent/WO2009133076A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Selon la présente invention, une cible de ZnOx:Al céramique sous-stœchiométrique, avec 0,3 < x < 1, est utilisée pour le dépôt d'une couche de ZnO:Al dans un procédé de pulvérisation réactive. Le procédé est effectué dans une atmosphère d'Ar/O2. Le schéma représente la vitesse de dépôt R en fonction du débit d'oxygène dans un procédé de pulvérisation selon la présente invention, par comparaison avec un procédé de pulvérisation classique utilisant une cible de ZnO stœchiométrique. La ligne supérieure x < 1 représente la vitesse de dépôt R lorsqu'on utilise la cible et le procédé de l'invention. La ligne inférieure x = 1, pour comparaison seulement, représente la vitesse de dépôt R lorsqu'on utilise une cible de ZnO céramique stœchiométrique. On peut constater d'après le schéma que les deux procédés sont assez stables dans la mesure où il n'y a pas de pentes raides lorsqu'on fait varier le débit d'oxygène. Cependant, la ligne x < l est au-dessus de la ligne x = l. Par conséquent, on peut choisir un point de travail P qui a une vitesse de dépôt R supérieure à celle d'un point de travail P' correspondant d'une cible céramique correspondante. Une vitesse de dépôt supérieure, cependant, implique un plus faible bombardement de la couche déposée par des ions de l'oxygène. Par conséquent, la qualité de la couche de ZnO:Al est améliorée en ce qui concerne la conductivité et l'aptitude à la gravure de la couche.
PCT/EP2009/055075 2008-04-30 2009-04-27 Cible de pulvérisation, procédé pour la fabrication d'une couche, en particulier d'une couche de tco (oxyde conducteur transparent) et procédé pour la fabrication d'une photopile à couche mince Ceased WO2009133076A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP08155495A EP2116631A1 (fr) 2008-04-30 2008-04-30 Cible de pulvérisation
US12/112,692 US20090272641A1 (en) 2008-04-30 2008-04-30 Sputter target, method for manufacturing a layer, particularly a tco (transparent conductive oxide) layer, and method for manufacturing a thin layer solar cell
US12/112,692 2008-04-30
EP08155495.8 2008-04-30

Publications (2)

Publication Number Publication Date
WO2009133076A2 WO2009133076A2 (fr) 2009-11-05
WO2009133076A3 true WO2009133076A3 (fr) 2010-03-04

Family

ID=40829880

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/055075 Ceased WO2009133076A2 (fr) 2008-04-30 2009-04-27 Cible de pulvérisation, procédé pour la fabrication d'une couche, en particulier d'une couche de tco (oxyde conducteur transparent) et procédé pour la fabrication d'une photopile à couche mince

Country Status (1)

Country Link
WO (1) WO2009133076A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8808882B2 (en) * 2010-09-17 2014-08-19 Guardian Industries Corp. Coated article having boron doped zinc oxide based seed layer with enhanced durability under functional layer and method of making the same
US8815420B2 (en) 2010-09-17 2014-08-26 Guardian Industries Corp. Coated article having zinc oxide seed layer with reduced stress under functional layer and method of making the same
EP2584062A1 (fr) * 2011-10-19 2013-04-24 Heraeus Materials Technology GmbH & Co. KG Cible de circuits et son utilisation
TWI480953B (zh) * 2012-03-30 2015-04-11 Hannstouch Solution Inc 複合透明氧化物薄膜及其製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060159932A1 (en) * 2005-01-19 2006-07-20 Guardian Industries Corp. Method of making low-E coating using ceramic zinc inclusive target, and target used in same
JP2007238375A (ja) * 2006-03-08 2007-09-20 Tosoh Corp ＺｎＯ−Ａｌ２Ｏ３系焼結体、スパッタリングターゲット及び透明導電膜の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060159932A1 (en) * 2005-01-19 2006-07-20 Guardian Industries Corp. Method of making low-E coating using ceramic zinc inclusive target, and target used in same
JP2007238375A (ja) * 2006-03-08 2007-09-20 Tosoh Corp ＺｎＯ−Ａｌ２Ｏ３系焼結体、スパッタリングターゲット及び透明導電膜の製造方法

Also Published As

Publication number Publication date
WO2009133076A2 (fr) 2009-11-05

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