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WO2009131401A3 - 발광 소자 및 그 제조방법 - Google Patents

발광 소자 및 그 제조방법 Download PDF

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Publication number
WO2009131401A3
WO2009131401A3 PCT/KR2009/002142 KR2009002142W WO2009131401A3 WO 2009131401 A3 WO2009131401 A3 WO 2009131401A3 KR 2009002142 W KR2009002142 W KR 2009002142W WO 2009131401 A3 WO2009131401 A3 WO 2009131401A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light
emitting element
production method
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/002142
Other languages
English (en)
French (fr)
Other versions
WO2009131401A2 (ko
Inventor
송준오
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR20080038586A external-priority patent/KR20090112854A/ko
Priority claimed from KR20080039083A external-priority patent/KR20090113349A/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to EP09734490.7A priority Critical patent/EP2280427B1/en
Priority to CN2009801146262A priority patent/CN102017200B/zh
Priority to US12/989,200 priority patent/US8471239B2/en
Publication of WO2009131401A2 publication Critical patent/WO2009131401A2/ko
Publication of WO2009131401A3 publication Critical patent/WO2009131401A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Led Devices (AREA)

Abstract

실시예에 따른 발광 소자는 지지 기판; 상기 지지 기판 상에 평탄화층; 상기 평탄화층 상에 웨이퍼 결합층; 상기 웨이퍼 결합층 상에 전류 퍼짐층; 상기 전류 퍼짐층 상에 제2 도전형의 반도체층; 상기 제2 도전형의 반도체층 상에 활성층; 상기 활성층 상에 제1 도전형의 반도체층; 상기 제1 도전형의 반도체층 상에 제1 전극층; 및 상기 전류 퍼짐층 상에 제2 전극층을 포함한다.
PCT/KR2009/002142 2008-04-25 2009-04-23 발광 소자 및 그 제조방법 Ceased WO2009131401A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP09734490.7A EP2280427B1 (en) 2008-04-25 2009-04-23 Light emitting diode
CN2009801146262A CN102017200B (zh) 2008-04-25 2009-04-23 发光器件和制造发光器件的方法
US12/989,200 US8471239B2 (en) 2008-04-25 2009-04-23 Light-emitting element and a production method therefor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2008-0038586 2008-04-25
KR20080038586A KR20090112854A (ko) 2008-04-25 2008-04-25 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법
KR10-2008-0039083 2008-04-27
KR20080039083A KR20090113349A (ko) 2008-04-27 2008-04-27 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법

Publications (2)

Publication Number Publication Date
WO2009131401A2 WO2009131401A2 (ko) 2009-10-29
WO2009131401A3 true WO2009131401A3 (ko) 2010-02-11

Family

ID=41217286

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/002142 Ceased WO2009131401A2 (ko) 2008-04-25 2009-04-23 발광 소자 및 그 제조방법

Country Status (4)

Country Link
US (1) US8471239B2 (ko)
EP (1) EP2280427B1 (ko)
CN (1) CN102017200B (ko)
WO (1) WO2009131401A2 (ko)

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US8542186B2 (en) 2009-05-22 2013-09-24 Motorola Mobility Llc Mobile device with user interaction capability and method of operating same
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
KR101047792B1 (ko) * 2010-04-23 2011-07-07 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
CN102290513B (zh) * 2011-09-14 2013-03-06 青岛理工大学 一种大功率高亮度发光二极管芯片及其制造方法
FR2985609B1 (fr) * 2012-01-05 2014-02-07 Commissariat Energie Atomique Substrat structure pour leds a forte extraction de lumiere
JP2014183285A (ja) * 2013-03-21 2014-09-29 Stanley Electric Co Ltd 発光素子
CN104112804A (zh) * 2013-04-18 2014-10-22 展晶科技(深圳)有限公司 发光二极管晶粒
US9362452B2 (en) * 2013-06-14 2016-06-07 Epistar Corporation Light-emitting device and the manufacturing method thereof
US20140367693A1 (en) * 2013-06-14 2014-12-18 Epistar Corporation Light-emitting device and the manufacturing method thereof
TWI577046B (zh) * 2014-12-23 2017-04-01 錼創科技股份有限公司 半導體發光元件及其製作方法
KR102688666B1 (ko) 2017-01-20 2024-07-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이를 포함하는 반도체 소자 패키지
CN109166950B (zh) * 2018-09-14 2024-04-19 厦门乾照光电股份有限公司 发光二极管的半导体芯片及其量子阱层和制造方法
CN110379895B (zh) * 2019-07-25 2022-04-22 湘能华磊光电股份有限公司 Led外延生长方法
JP7344937B2 (ja) * 2021-07-30 2023-09-14 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

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US20070221944A1 (en) * 2005-11-15 2007-09-27 Myung Cheol Yoo Light emitting diodes and fabrication methods thereof

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KR20070063912A (ko) * 2005-12-16 2007-06-20 삼성전자주식회사 광학 소자 및 그 제조 방법
KR20070081482A (ko) * 2006-02-13 2007-08-17 오인모 가장자리 엔형 오믹접촉 전극 구조를 갖는 차세대 피사이드다운 구조의 수직형 발광소자

Also Published As

Publication number Publication date
EP2280427A4 (en) 2011-11-30
CN102017200A (zh) 2011-04-13
EP2280427B1 (en) 2013-08-21
CN102017200B (zh) 2013-07-10
WO2009131401A2 (ko) 2009-10-29
US20110108798A1 (en) 2011-05-12
US8471239B2 (en) 2013-06-25
EP2280427A2 (en) 2011-02-02

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