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WO2009116830A3 - 반도체 소자 및 그 제조방법 - Google Patents

반도체 소자 및 그 제조방법 Download PDF

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Publication number
WO2009116830A3
WO2009116830A3 PCT/KR2009/001424 KR2009001424W WO2009116830A3 WO 2009116830 A3 WO2009116830 A3 WO 2009116830A3 KR 2009001424 W KR2009001424 W KR 2009001424W WO 2009116830 A3 WO2009116830 A3 WO 2009116830A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
semiconductor device
fabrication method
method therefor
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/001424
Other languages
English (en)
French (fr)
Other versions
WO2009116830A2 (ko
Inventor
송준오
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US12/933,599 priority Critical patent/US8487341B2/en
Publication of WO2009116830A2 publication Critical patent/WO2009116830A2/ko
Publication of WO2009116830A3 publication Critical patent/WO2009116830A3/ko
Anticipated expiration legal-status Critical
Priority to US13/923,745 priority patent/US8766316B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

실시예에 따른 반도체 소자 제조방법은 단결정 반도체 박막이 형성된 성장 기판, 지지 기판 및 임시 기판을 준비하는 단계; 상기 지지 기판을 사이에 두고 기능성 웨이퍼 결합층을 매개로 상기 성장 기판, 지지 기판 및 임시 기판을 결합시키는 단계; 상기 성장 기판을 상기 단결정 반도체 박막으로부터 분리하는 단계; 및 상기 임시 기판을 상기 지지 기판으로부터 분리하는 단계를 포함한다.
PCT/KR2009/001424 2008-03-19 2009-03-19 반도체 소자 및 그 제조방법 Ceased WO2009116830A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/933,599 US8487341B2 (en) 2008-03-19 2009-03-19 Semiconductor device having a plurality of bonding layers
US13/923,745 US8766316B2 (en) 2008-03-19 2013-06-21 Semiconductor device having plurality of bonding layers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0025222 2008-03-19
KR20080025222 2008-03-19

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/933,599 A-371-Of-International US8487341B2 (en) 2008-03-19 2009-03-19 Semiconductor device having a plurality of bonding layers
US13/923,745 Continuation US8766316B2 (en) 2008-03-19 2013-06-21 Semiconductor device having plurality of bonding layers

Publications (2)

Publication Number Publication Date
WO2009116830A2 WO2009116830A2 (ko) 2009-09-24
WO2009116830A3 true WO2009116830A3 (ko) 2010-01-14

Family

ID=41091415

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001424 Ceased WO2009116830A2 (ko) 2008-03-19 2009-03-19 반도체 소자 및 그 제조방법

Country Status (3)

Country Link
US (2) US8487341B2 (ko)
KR (1) KR101470020B1 (ko)
WO (1) WO2009116830A2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343612B2 (en) 2011-07-15 2016-05-17 Koninklijke Philips N.V. Method of bonding a semiconductor device to a support substrate
US9056354B2 (en) * 2011-08-30 2015-06-16 Siemens Aktiengesellschaft Material system of co-sintered metal and ceramic layers
US8999226B2 (en) 2011-08-30 2015-04-07 Siemens Energy, Inc. Method of forming a thermal barrier coating system with engineered surface roughness
TWI478384B (zh) * 2011-12-28 2015-03-21 Toshiba Kk Semiconductor light emitting element and manufacturing method thereof
US9186866B2 (en) * 2012-01-10 2015-11-17 Siemens Aktiengesellschaft Powder-based material system with stable porosity
JP5884585B2 (ja) * 2012-03-21 2016-03-15 住友電気工業株式会社 炭化珪素半導体装置の製造方法
WO2014037829A1 (en) * 2012-09-05 2014-03-13 Koninklijke Philips N.V. Laser de-bond of carrier wafer from device wafer
US11721547B2 (en) * 2013-03-14 2023-08-08 Infineon Technologies Ag Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
KR101485908B1 (ko) * 2013-05-16 2015-01-26 전북대학교산학협력단 고온 에피층을 이종 기판에 성장하는 구조 및 그 제조 방법
DE102015100686A1 (de) * 2015-01-19 2016-07-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Halbleiterchips und Halbleiterchip
KR101935028B1 (ko) * 2016-01-11 2019-01-04 주식회사 제이티엔유 Led 웨이퍼 기판 제조 방법
KR102234101B1 (ko) 2018-09-21 2021-04-01 고려대학교 산학협력단 박막성장구조, 박막성장방법 및 박막열처리방법
KR102615808B1 (ko) * 2022-07-07 2023-12-20 웨이브로드 주식회사 그룹3족 질화물 반도체 템플릿 제조 방법 및 이에 따라 제조된 반도체 템플릿

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040245543A1 (en) * 2003-06-04 2004-12-09 Yoo Myung Cheol Method of fabricating vertical structure compound semiconductor devices
KR20070011916A (ko) * 2005-07-22 2007-01-25 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
KR100723249B1 (ko) * 2006-02-22 2007-05-29 삼성전기주식회사 수직구조 질화물 반도체 발광다이오드

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4698018B2 (ja) * 2000-12-12 2011-06-08 日本碍子株式会社 接着体の製造方法、および接着剤
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
JP3997523B2 (ja) * 2002-11-28 2007-10-24 信越半導体株式会社 発光素子
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP4225510B2 (ja) * 2005-07-06 2009-02-18 昭和電工株式会社 化合物半導体発光ダイオードおよびその製造方法
JP2008042143A (ja) * 2006-08-10 2008-02-21 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
DE102006048658B4 (de) * 2006-10-14 2014-03-27 Khs Corpoplast Gmbh PICVD-Beschichtung für Kunststoffbehälter und Verfahren zu deren Herstellung
KR101438818B1 (ko) * 2008-04-01 2014-09-05 엘지이노텍 주식회사 발광다이오드 소자
JP5148647B2 (ja) * 2010-03-05 2013-02-20 株式会社東芝 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
JP4997304B2 (ja) * 2010-03-11 2012-08-08 株式会社東芝 半導体発光素子及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040245543A1 (en) * 2003-06-04 2004-12-09 Yoo Myung Cheol Method of fabricating vertical structure compound semiconductor devices
KR20070011916A (ko) * 2005-07-22 2007-01-25 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
KR100723249B1 (ko) * 2006-02-22 2007-05-29 삼성전기주식회사 수직구조 질화물 반도체 발광다이오드

Also Published As

Publication number Publication date
US8487341B2 (en) 2013-07-16
KR20090100230A (ko) 2009-09-23
US20110101413A1 (en) 2011-05-05
KR101470020B1 (ko) 2014-12-10
US20130307123A1 (en) 2013-11-21
US8766316B2 (en) 2014-07-01
WO2009116830A2 (ko) 2009-09-24

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