WO2009116569A1 - 拡散用リンペースト及びそれを利用した太陽電池の製造方法 - Google Patents
拡散用リンペースト及びそれを利用した太陽電池の製造方法 Download PDFInfo
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- WO2009116569A1 WO2009116569A1 PCT/JP2009/055278 JP2009055278W WO2009116569A1 WO 2009116569 A1 WO2009116569 A1 WO 2009116569A1 JP 2009055278 W JP2009055278 W JP 2009055278W WO 2009116569 A1 WO2009116569 A1 WO 2009116569A1
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
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- H10F10/00—Individual photovoltaic cells, e.g. solar cells
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a diffusion phosphorus paste applied on a substrate by screen printing when forming a diffusion layer on a semiconductor substrate, and further uses the diffusion phosphorus paste to form a diffusion layer on a solar cell substrate.
- the present invention relates to a method for manufacturing a solar cell.
- a p-type silicon substrate obtained by slicing a single crystal silicon ingot produced by a Czochralski (CZ) method or a polycrystalline silicon ingot produced by a cast method by a multi-wire method is prepared.
- fine irregularities (textures) having a maximum height of about 10 ⁇ m are formed on both the light receiving surface and the back surface.
- the n-type diffusion layer is formed by thermally diffusing the dopant into the substrate by various methods.
- TiO 2 or SiN is deposited on the light receiving surface with a film thickness of, for example, about 70 nm to form an antireflection film.
- a back electrode paste mainly composed of aluminum is printed over the entire back surface and baked to form a back electrode.
- the light receiving surface electrode is formed by printing and baking a light receiving surface electrode paste mainly composed of silver in a comb shape having a width of about 100 to 200 ⁇ m.
- Such a technique is excellent in that it has various effects that enhance the characteristics of solar cells such as energy conversion efficiency, despite the minimum number of steps necessary for configuring the device. It is a technique.
- thermal diffusion of a dopant when forming a diffusion layer on a substrate serves to improve the diffusion length of minority carriers in the bulk by a gettering action.
- the baking of the aluminum printed on the back surface can form a p + high concentration layer having an electric field layer (BSF: Back Surface Field) effect on the back surface at the same time as forming the electrode.
- BSF Back Surface Field
- the antireflection film functions to reduce the recombination rate of carriers generated in the vicinity of the silicon surface as well as the optical effect (reduction in reflectance). Due to the necessary minimum number of steps and several useful effects, the cost of consumer solar cells has been reduced.
- the conversion efficiency of a solar cell using a silicon single crystal substrate reached a peak at about 16%, and no significant improvement in conversion efficiency could be expected.
- the surface concentration of a dopant such as phosphorus in the diffusion layer needs to be about 2.0 to 3.0 ⁇ 10 20 cm ⁇ 2 in order to sufficiently reduce the contact resistance of the light receiving surface electrode.
- the surface level becomes so high that the surface of the substrate becomes so high that carrier recombination in the vicinity of the light-receiving surface is promoted, short-circuit current and open-circuit voltage are limited, and conversion efficiency reaches its peak. .
- Patent Document 1 a low ohmic contact can be formed even when the surface concentration of the diffusion layer is about 1.0 ⁇ 10 20 cm ⁇ 2 or less. This is due to the addition of a compound containing a dopant around the silver filler contained in the electrode paste, whereby the dopant forms a high-concentration layer directly under the electrode during electrode firing.
- a high-concentration diffusion layer (emitter layer) containing a high concentration of dopant is formed just under the electrode, and the surface concentration of the diffusion layer in the other part of the light-receiving surface is lowered, that is, converted by forming a two-stage emitter.
- “photoelectric conversion device and manufacturing method thereof” is known in Japanese Patent Application Laid-Open No. 2004-273826 (Patent Document 2).
- Patent Document 3 a method for forming an electrode of a buried electrode solar cell known from JP-A-8-37318
- JP-A-8-191152 Patent Document 4
- Patent Document 5 Japanese Patent Application Laid-Open No. 2004-221149 is known.
- a plurality of types of coating agents are separately applied by an ink jet method and regions having different dopant concentrations and dopant types are created by a simple process.
- phosphoric acid or the like when phosphoric acid or the like is used as a dopant, a countermeasure against corrosion is required, and the apparatus becomes complicated and maintenance becomes complicated.
- coating agents having different dopant concentrations and types are applied separately by inkjet, if the diffusion is performed by a single heat treatment, a desired concentration difference cannot be obtained by autodoping.
- Patent Document 6 Japanese Patent Laid-Open No. 2004-28169 A “solar cell manufacturing method”
- Patent Document 6 Japanese Patent Laid-Open No. 2004-28169 A “solar cell manufacturing method”
- the heat treatment is performed once, the dopant is highly concentrated in portions other than the portion immediately below the electrode on the light receiving surface due to autodoping, and high conversion efficiency is not exhibited.
- Patent Document 9 a first coating agent containing phosphoric acid and a second coating agent containing diphosphorus pentoxide are simultaneously applied by screen printing on a p-type substrate.
- a method has been proposed in which a high concentration diffusion layer and a low concentration diffusion layer are simultaneously formed by thermal diffusion. This makes it very easy to form a two-stage emitter that is complicated such as the formation of a diffusion mask, resulting in a reduction in manufacturing cost. Further, since a sufficient surface concentration is maintained in the high concentration diffusion layer, a low ohmic contact can be easily formed, and a high performance solar cell can be manufactured while maintaining a high manufacturing yield.
- the advantage of using the screen printing method is that any pattern can be easily formed, and a diffusing agent having a high dopant concentration is formed on the surface of the substrate with a uniform film thickness by one printing.
- the dopant can be efficiently diffused by the high concentration phosphorous glass layer in the subsequent heat treatment.
- the diffusion coating liquid for spin coating include the phosphorus diffusion coating liquid disclosed in Japanese Patent Application Laid-Open No. 2007-53353 (Patent Document 7) and the boron diffusion coating liquid disclosed in Japanese Patent Application Laid-Open No. 2007-35719 (Patent Document 8). is there.
- the screen printing method as disclosed in Patent Document 9 can stack a large amount of diffusing agent on the surface of the substrate in a short printing process without wasting materials.
- a diffusion coating agent generally uses a phosphorus compound, a water-soluble polymer compound, and a water-soluble phosphorus paste containing water, and the viscosity of this water-soluble phosphorus paste is Is susceptible to changes in the surrounding environment due to humidity and the like.
- the viscosity increases due to dehumidification each time the printing is repeated.
- the screen mesh becomes clogged and water-soluble With phosphorus paste, continuous printability for a long time and many times was unstable.
- the present invention has been made in view of the above problems, and an object of the present invention is to provide a diffusion phosphorus paste used for continuous printing on a substrate by screen printing.
- An object of the present invention is to provide a phosphorus paste for diffusion which has little influence on the surface and does not cause a thickening even if the number of continuous printing is repeated.
- Another object of the present invention is to provide a method of manufacturing a solar cell using this diffusion phosphorus paste.
- the present invention provides a diffusion phosphorus paste applied on a substrate by screen printing to form a diffusion layer on the substrate, and the diffusion phosphorus paste includes at least the dopant of the diffusion layer.
- Phosphorus for diffusion characterized by comprising a dopant containing phosphorus, a thixotropic agent containing an organic binder and solids, and an organic solvent, wherein the dopant contains an organic phosphorus compound A paste is provided (claim 1).
- the diffusion phosphorus paste is an organic diffusion phosphorus paste containing an organic phosphorus compound, a thixotropic agent containing an organic binder and a solid content, and an organic solvent. It can be set as the phosphorus paste for diffusion which does not have an influence on a viscosity by humidity. Therefore, even if the desired pattern of the diffusion layer is a fine line pattern, the thickening of the paste due to the number of continuous printings is suppressed, so that the mesh stretched on the screen plate is not easily clogged, and the continuous screen By using it for printing, the number of times of continuous printing on a substrate with one plate making can be greatly increased. Further, since the screen mesh is not easily clogged, the diffusion phosphorus paste applied on the substrate can have fewer defects than the desired diffusion layer pattern.
- the diffusion phosphorus paste includes an organic binder and a thixotropic agent containing a solid content
- the thixotropy can be easily controlled.
- the bleeding from the desired pattern of the paste can be suppressed.
- an organic binder it is possible to improve the detachability from the mesh opening in screen plate making.
- the diffusion phosphorus It is possible to easily adjust the film thickness reduction in drying after paste printing and the shrinkage in firing.
- the organophosphorus compound is preferably a polymer monomer having a phosphate group and / or a polymer monomer derivative having a phosphate group.
- the dopant of the diffusion layer formed by the phosphoric acid group phosphorus is formed when the organophosphorus compound as the dopant is a polymer monomer having a phosphate group and / or a polymer monomer derivative having a phosphate group.
- the source A commercially available product can be used as the polymer monomer having a phosphate group and / or the polymer monomer derivative having a phosphate group, and the material can be easily obtained.
- the solid content is preferably particulate silica (Claim 3), and the organic binder is preferably polyvinyl acetate (Claim 4).
- the solid content of the thixotropic agent is particulate silica
- the organic binder is polyvinyl acetate, so that the particulate silica is easy to suppress the decrease in film thickness during drying after paste printing and the shrinkage during firing. Vinyl is easy to control the detachability from the mesh opening.
- the said organic solvent is a high boiling point solvent whose boiling point is 100 degreeC or more.
- the organic solvent contained in the diffusion phosphorus paste is a high-boiling solvent having a boiling point of 100 ° C. or higher, so that there is no change in composition due to volatilization of the solvent in a normal printing environment. It can be set as the paste which can be printed.
- the diffusion phosphorus paste may further contain silicon alkoxide.
- the silicon alkoxide serves as a linker between the organic phosphorus compound of the dopant and the solid particulate silica, and in the diffusion heat treatment, the phosphorus component and the silica Because of the effect of promoting sintering, the outward diffusion of phosphorus can be further prevented.
- Silicon alkoxide is preferable in that the raw material is inexpensive and easily available.
- the present invention also provides a method for manufacturing a solar cell, wherein the diffusion phosphorus paste is applied to a substrate by screen printing using the diffusion phosphorus paste, and the diffusion layer is formed by subjecting the substrate to a heat treatment. Item 7).
- the diffusion phosphorus paste can greatly improve the number of continuous printings compared to the conventional method, so that the yield is high and the quality is high.
- the solar cell can be manufactured and the manufacturing cost can be greatly reduced.
- the organic diffusion phosphorus paste is used, for example, the high-concentration diffusion layer and the low-concentration diffusion layer can be performed by one diffusion heat treatment, which is not a complicated procedure and is a simple process. It can be.
- the phosphorus paste for diffusion according to this invention there will be little influence on the viscosity by ambient humidity, and it can be set as the phosphorus paste for diffusion which does not have a possibility of thickening even if it repeats the frequency
- a solar cell using the phosphorous paste for diffusion of the present invention a high-quality solar cell can be manufactured with a simple procedure with a high yield, and the number of times of plate-making used for continuous printing can be increased. The manufacturing cost can be greatly reduced.
- the water-soluble diffusion paste used in screen printing that has been used in the past is susceptible to the surrounding environment due to humidity, and it is difficult to control the viscosity to a desired viscosity.
- the stability of continuous printing is poor, and due to the non-uniformity of printing, a precise semiconductor device cannot be constructed.
- the conventional water-soluble phosphorus paste for diffusion contains water, the screen mesh is clogged at an early stage because the water is thickened by dehumidification each time the number of continuous printing is repeated. When the mesh is clogged in this way, the printed pattern has many defects and cannot be printed. Therefore, it is necessary to frequently clean up the water-soluble diffusion paste filled in the screen-making plate mesh.
- a cleaning solution for decomposing the solidified water-soluble diffusion phosphorus paste is used, this becomes a large amount of waste solution, resulting in a decrease in production yield as the environmental load increases. was there.
- the present inventors have conducted extensive research.
- the present inventors in order to greatly improve the number of continuous printing with one screen plate making, Rather than using the conventional water-soluble diffusion phosphorus paste, which is likely to cause clogging of the mesh, it can be used for screen printing by using an organic phosphorus compound as a dopant to make an organic diffusion phosphorus paste.
- the present inventors completed the present invention by conceiving that a new phosphorus paste for diffusion which is easy to control to a desired viscosity without being affected by the surrounding environment due to humidity and has excellent continuous printing stability.
- the diffusion phosphorus paste of the present invention is a diffusion phosphorus paste used when applied on a substrate by screen printing to form a diffusion layer on the substrate, and at least phosphorus serving as a dopant of the diffusion layer. It contains a dope agent, a thixotropic agent containing an organic binder and a solid content, and an organic solvent. Particularly in the present invention, the dopant containing phosphorus as a dopant as the diffusion phosphorus paste is an organic phosphorus compound.
- the diffusion phosphorus paste used in screen printing is not water-soluble but organic diffusion phosphorus paste, so that the diffusion phosphorus paste does not affect the viscosity due to ambient humidity. Can do. Therefore, by using the organic diffusion phosphorus paste of the present invention for continuous screen printing, even if the desired pattern of the diffusion layer is a fine line pattern, the thickening of the paste due to the number of continuous printing is suppressed. Therefore, clogging of the mesh stretched on the screen plate making is difficult to occur, and the number of times of continuous printing on the substrate with one plate making can be greatly increased. Further, since the screen mesh is not easily clogged, the diffusion phosphorus paste applied on the substrate can have fewer defects than the desired diffusion layer pattern. Furthermore, since the number of continuous printings can be greatly improved, the number of screen plate cleaning operations is reduced, leading to an improvement in device manufacturing yield and cost reduction.
- the diffusion phosphorus paste includes an organic binder and a thixotropic agent containing a solid content
- the thixotropy can be easily controlled.
- the bleeding from the desired pattern of the paste can be suppressed.
- an organic binder it is possible to improve the detachability from the mesh opening in screen plate making.
- the diffusion phosphorus It is possible to easily adjust the film thickness reduction in drying after paste printing and the shrinkage in firing.
- the organic phosphorus compound constituting the organic diffusion phosphorus paste dopant is preferably a polymer monomer having a phosphate group and / or a polymer monomer derivative having a phosphate group.
- a specific example of the polymer monomer having a phosphate group is acid phosphooxyethyl methacrylate. Thereby, phosphorus of a phosphoric acid group becomes a dopant source of the diffusion layer to be formed.
- the polymer monomer having a phosphate group and / or the polymer monomer derivative having a phosphate group commercially available products can be used, and materials can be easily obtained.
- organic phosphorus compounds can be synthesized by dehydration reaction or transesterification with acrylic acid or methacrylic acid and a phosphoric acid compound in the same manner as general acrylic monomers.
- the organophosphorus compound of the dopant is preferably 3 to 10% by mass of phosphorus and more preferably 4 to 7% by mass with respect to the total paste mass.
- the reason why such a range is desirable is that the ohmic contact with the metal electrode becomes better, the conversion efficiency of the solar cell does not decrease, and the sheet of the low concentration diffusion layer by out diffusion (outward diffusion) This is because there is little decrease in resistance, and there is no fear that the conversion efficiency will be reduced along with the short circuit current reduction due to the increase in level.
- the solid content constituting the thixotropic agent is not particularly limited, but is preferably particulate silica.
- the solid content is particulate silica, it is easy to suppress a decrease in film thickness during drying after paste printing and shrinkage during firing.
- the solid particulate silica is preferably contained in 5 to 15 parts by mass in 100 parts by mass of the diffusion phosphorus paste.
- the ratio of the solid content in the paste is 10% by mass or more.
- the organic binder constituting the thixotropic agent is desirably contained in 5 to 20 parts by mass in 100 parts by mass of the diffusion phosphorus paste.
- the phosphorus paste for diffusion which has a viscosity characteristic suitable for printing can be obtained.
- the degree of polymerization of the organic binder is desirably 200 to 2000, and more preferably 400 to 800.
- organic binder examples include linear organic polymers having a film property (the film property indicates a property of forming a uniform film when the compound is dissolved in a solvent and then dried).
- linear organic polymers include polyvinyl acetate, acrylic resins (polyacrylic acids and their salts, hydroxyethyl acrylate homopolymers and copolymers, hydroxypropyl acrylate homopolymers and copolymers, and hydroxybutyl acrylate homopolymers.
- polyvinyl acetal resins polyvinyl acetate or hydrolyzed polyvinyl acetate, polyvinyl formal, polyvinyl butyral, polyvinyl alcohol having a hydrolysis degree of 60% by mass or more, preferably 80% by mass or more
- polyurethane resins polyurea resins
- Polyimide resin polyamide resin
- epoxy resin methacrylic resin (polymethacrylic acids and their salts, homopolymers and copolymers of hydroxymethacrylate) Homopolymers and copolymers of hydroxyethyl methacrylate)
- polystyrene resin novolak phenolic resins
- polyester resins synthetic rubber, natural rubber (gum arabic), and the like.
- the organic binder may be used alone or in combination of two or more, provided that the organic phosphorus compound and the organic solvent are compatible.
- the thixotropic agent is desirably a combination of at least one selected from fine particle silica which is a solid content and an organic binder.
- the organic binder of this embodiment is preferably polyvinyl acetate.
- polyvinyl acetate can easily control the detachability from the mesh opening.
- the organic solvent in this embodiment is desirably contained in 30 to 60 parts by mass in 100 parts by mass of the phosphorus paste for diffusion.
- the boiling point of the organic solvent is preferably a high boiling point solvent having a temperature of 100 ° C. or higher.
- the organic solvent contained in the diffusion phosphorus paste is a high-boiling solvent having a boiling point of 100 ° C. or higher, so that the volatilization of the solvent is suppressed and the composition change of the paste is reduced, and stable printing is performed. It becomes possible.
- suitable organic solvents include TPM (isobutyric acid 3-hydroxy-2,2,4-trimethylpentyl ester) as a high-boiling point solvent, such as TPM (isobutyric acid 3-hydroxy-2,2,4-trimethylpentyl ester).
- TPM isobutyric acid 3-hydroxy-2,2,4-trimethylpentyl ester
- the compound that can be used as the high boiling point solvent is not limited thereto.
- Examples include aliphatic hydrocarbon solvents, carbitol solvents, cellosolve solvents, higher fatty acid ester solvents, higher alcohol solvents, higher fatty acid solvents, aromatic hydrocarbon solvents, and the like.
- liquid paraffin and aliphatic hydrocarbon solvents are preferably used because of their low odor.
- Examples of the aliphatic hydrocarbon solvent include “IP Solvent” manufactured by Idemitsu Kosan Co., Ltd., “Shellsol D40” manufactured by Shell Chemical Co., Ltd.
- examples of the carbitol solvent include methyl carbitol, ethyl carbitol, butyl carbitol, and the like
- examples of the cellosolve solvent include ethyl cellosolve, isoamyl cellosolve, hexyl cellosolve, and the like.
- examples of higher fatty acid ester solvents include dioctyl phthalate, dibutyl succinic acid isobutyl ester, adipic acid isobutyl ester, dibutyl sepacate, di-2-ethylhexyl sepacate, and higher alcohol solvents include methyl hexanol and oleyl.
- Examples include alcohol, trimethylhexanol, trimethylbutanol, tetramethylnonanol, 2-pentylnonanol, 2-nonylnonanol, 2-hexyldecanol and the like.
- Examples of higher fatty acid solvents include caprylic acid, 2-ethylhexanoic acid, and oleic acid
- examples of aromatic hydrocarbon solvents include butylbenzene, diethylbenzene, dipentylbenzene, and diisopropylnaphthalene.
- organic solvents can be used alone, but in order to adjust the viscosity, etc., dispersibility with fine particle silica or organic binder, which is a solid content, wettability with a textured silicon crystal substrate, etc. It can be used in combination as appropriate.
- polyvinyl acetate as an organic binder in combination with an ester solvent having compatibility.
- the organic diffusion phosphorus paste of the present embodiment may further contain silicon alkoxide.
- Silicon alkoxide acts as a linker between the organophosphorus compound of the dopant and solid particulate silica, and has the effect of promoting the sintering of the phosphorus component and silica in the diffusion heat treatment. Can be prevented. Silicon alkoxide is preferable in that the raw material is inexpensive and easily available.
- the silicon alkoxide is desirably contained in an amount of 1 to 20 parts by mass in 100 parts by mass of the phosphorus paste for diffusion.
- silicon alkoxide compounds such as Si (OCH 3 ) 4 , Si (OC 2 H 5 ) 4 , Si (OC 3 H 7 ) 4 , and Si (OC 4 H 9 ) 4 are used.
- the raw material is preferable because it is inexpensive and easily available.
- the organic phosphorous paste for diffusion according to this embodiment preferably further has a viscosity of 30 to 100 Pa ⁇ s when the shear rate of the paste is 20 s ⁇ 1 at 25 ° C.
- the paste viscosity at the time of occurrence of high shear stress is small, so even when fine wiring is formed by the screen printing method, the screen mesh is not clogged by the paste, and wiring without defects such as disconnection can be obtained. it can.
- the viscosity at low shear stress when the shear rate of the paste is 2 s ⁇ 1 is desirably 2 to 5 times the viscosity when the shear rate is 20 s ⁇ 1 .
- FIG. 1 is a schematic view of a solar cell to be manufactured
- FIG. 2 is a diagram for explaining a method of manufacturing a solar cell using an organic diffusion phosphorus paste according to the present invention.
- FIG. 3 is an image diagram of the flow of FIG. 1 to 3, 1 is a substrate, 2 is a high-concentration diffusion layer, 3 is a low-concentration diffusion layer, 4 is a passivation film / antireflection film, 5 is a BSF layer, 6 is a back electrode, and 7 is a light-receiving surface comb.
- An electrode, 8 is an organic diffusion phosphorus paste (for screen printing), and 9 is a diffusion agent (for spin coating).
- a gallium-doped p-type single crystal silicon substrate 1 is prepared (see FIG. 3A).
- This silicon single crystal substrate may be produced by any one of the Czochralski (CZ) method and the float zone (FZ) method.
- the specific resistance of the substrate is preferably, for example, 0.1 to 20 ⁇ ⁇ cm, and in particular 0.5 to 2.0 ⁇ ⁇ cm is suitable for producing a high-performance solar cell.
- the prepared substrate 1 is immersed in an aqueous sodium hydroxide solution, and the damaged layer is removed by etching.
- a strong alkaline aqueous solution such as potassium hydroxide may be used.
- an aqueous acid solution such as hydrofluoric acid.
- a random texture is formed on the substrate 1 subjected to damage etching.
- a solar cell preferably has an uneven shape on the surface. The reason is that in order to reduce the reflectance in the visible light region, it is necessary to cause the light receiving surface to perform reflection at least twice as much as possible. The size of each of these peaks may be about 1 to 20 ⁇ m.
- Typical surface uneven structures include V-grooves and U-grooves. These can be formed using a grinding machine. In order to create a random concavo-convex structure, it is possible to use wet etching by dipping in an aqueous solution of sodium hydroxide and isopropyl alcohol, or to use acid etching or reactive ion etching. . In FIGS. 1 and 3, the texture structure formed on both sides is omitted because it is fine.
- a two-stage emitter composed of the high concentration diffusion layer 2 and the low concentration diffusion layer 3 is formed.
- the high-concentration diffusion layer is printed and baked with a screen printer using the organic diffusion phosphorus paste 8 (see FIG. 3B).
- the low-concentration diffusion layer can be formed by spin-coating a diffusing agent 9 for spin coating containing diphosphorus pentoxide and silicon alkoxide (see FIG. 3C) and performing diffusion heat treatment (FIG. 3). 3 (D)).
- the photoelectric conversion efficiency can be improved by suppressing the surface recombination of the light receiving surface other than the electrode and the recombination in the emitter while obtaining an ohmic contact.
- Another embodiment of the method for forming the two-stage emitter is a method in which both the high-concentration diffusion layer and the low-concentration diffusion layer are applied by screen printing. Specifically, an organic diffusion phosphorus paste for forming a high concentration diffusion layer on a p-type semiconductor substrate is printed on a plurality of lines or dot patterns, and then an organic for forming a low concentration diffusion layer The conductive diffusion phosphorus paste is printed so as to be in contact with at least part of the organic diffusion phosphorus paste for forming the high-concentration diffusion layer applied on the semiconductor substrate 1. Then, heat treatment is performed on the substrate on which the two types of phosphorus pastes for diffusion are printed.
- the content of phosphorus contained in the organic diffusion phosphorus paste for forming the high concentration diffusion layer is equal to the phosphorus content contained in the organic diffusion phosphorus paste for forming the low concentration diffusion layer. It is preferable to make it 2 times or more with respect to the content rate of.
- junction separation is performed using a plasma etcher.
- the sample is stacked so that plasma and radicals do not enter the light receiving surface and the back surface, and in this state, the end surface is cut by several ⁇ m.
- a nitride film 4 as a surface protective film is deposited on the emitter layer using a direct plasma CVD apparatus.
- the film thickness is preferably 70 nm to 100 nm because it also serves as an antireflection film.
- Other antireflection films include oxide films, titanium dioxide films, zinc oxide films, tin oxide films, and the like, which can be substituted.
- the formation method includes a remote plasma CVD method, a coating method, a vacuum deposition method, and the like. From an economical viewpoint, it is preferable to form a nitride film by the plasma CVD method.
- a film having a refractive index between 1 and 2 such as a magnesium difluoride film, is formed on the antireflection film so that the total reflectivity is minimized, the reflectivity is further reduced and generated.
- the current density is increased.
- a paste made of, for example, aluminum is applied to the back surface and dried.
- an Ag electrode is printed using a comb-shaped electrode pattern printing plate using a screen printing apparatus, and dried.
- the BSF layer 5 is formed in a baking process after aluminum printing.
- the application of the diffusion paste is continuously printed on the substrate one after another.
- the screen plate making used for continuous printing increases the clogging of the mesh opening as the number of times of use increases, but the organic diffusion phosphorus paste of the present invention is used.
- the viscosity is controlled to a desired viscosity without being affected by the surrounding environment due to humidity, and is an organic diffusion phosphorus paste having excellent continuous printing stability. The number of times can be greatly improved.
- Example 1 Preparation of diffusion phosphorus paste> An organic diffusion phosphorus paste was prepared by blending the following materials. ⁇ Dope agent (including phosphorus) Hosmer M (Unichemical Co., Ltd.) and Hosmer MH (Unichemical Co., Ltd.): 200 g ⁇ Thixotropic agent (solid content) Fine-particle silica (size is about 1.5 ⁇ m): 75 g ⁇ Thixotropic agent (organic binder) Polyvinyl acetate (degree of polymerization about 500): 100 g ⁇ Organic solvent TPM (isobutyric acid 3-hydroxy-2,2,4-trimethylpentyl ester: Isobutylic Acid 3-Hydroxy-2,2,4-trimethylester) (boiling point 244 ° C.): 320 g
- Example 2 ⁇ Manufacture of solar cells> Using the organic diffusion phosphorus paste blended in Example 1, a solar cell was manufactured by the method described in the embodiment of the solar cell manufacturing method. At this time, the prepared substrate was a crystal plane orientation (100), 15.65 cm square 200 ⁇ m thickness, as-sliced resistivity 2 ⁇ ⁇ cm (dopant concentration 7.2 ⁇ 10 15 cm ⁇ 3 ) gallium doped p-type single crystal silicon substrate It is.
- the former means was adopted as a method for forming the two-stage emitter.
- the organic diffusion phosphorus paste of Example 1 was printed by a screen printing apparatus.
- the printing pattern at this time was a 2 mm pitch, 150 ⁇ m width line.
- the printed material was baked at 700 to 800 ° C. for 5 minutes, and then a spin coating diffusing agent containing diphosphorus pentoxide and silicon alkoxide was spin coated on the same surface at 5000 rpm for 15 seconds. This was put into a heat treatment furnace, held at 880 ° C. for 40 minutes, and taken out.
- the sheet resistance of a portion other than the diffusion paste printing portion, which is a low-concentration emitter of the solar cell produced in Example 2 was measured and found to be 80 to 110 ⁇ / sq.
- the results shown in Table 1 were obtained. .
- Table 1 shows average values obtained by measuring 100 solar cells and measuring their characteristics.
- Example 3 solar cells were continuously produced from a large number of substrates in the step of Example 2 using the organic diffusion phosphorus paste blended in Example 1. As a result, in the continuous screen printing process, it was possible to print the diffusion phosphorus paste up to 30000 times, which is the life of the screen plate making, without cleaning the screen plate making even once.
- the sheet resistance of a portion other than the diffusion paste printing portion, which is a low-concentration emitter of the solar cell produced in Comparative Example 2 was measured and found to be 80 to 110 ⁇ / sq.
- the results shown in Table 1 were obtained. .
- Table 1 shows average values obtained by measuring 100 solar cells and measuring their characteristics.
- FIG. 4 shows the relationship of paste viscosity to the number of continuous printings.
- the water-soluble phosphorus paste and organic phosphorus paste with the same initial viscosity are continuously printed on a plate, the water-soluble phosphorus paste thickens due to dehumidification and becomes unprintable after about 2500 times.
- the paste has a small viscosity change and can be permanently printed.
- FIG. 4 shows that the number of printable times is overwhelmingly higher when the organic diffusion phosphorus paste of the present invention is used.
- the manufacturing yield is improved and excellent. This makes it possible to produce products that are highly competitive in the solar cell market.
- the solar cell as one of the semiconductor devices has been described in detail above, the present invention is not limited only to the solar cell, and other semiconductor devices having diffusion layers with different surface concentrations in the plane are also included. Needless to say, the organic diffusion phosphorus paste of the present invention can be applied.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has any configuration substantially the same as the technical idea described in the claims of the present invention and exhibits the same function and effect. It is included in the technical scope.
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Abstract
Description
このような必要最小限工程数といくつかの有用な効果により、民生用太陽電池は以前より低コスト化が図られている。
ところが、このように電極用ペーストに含まれる銀フィラーの周りにドーパントを含む化合物を添加する方法では、安定的に拡散層と電極のコンタクトを形成することができないため、フィルファクタが低く、且つ、信頼性が低い太陽電池となってしまうといった問題がある。
しかし、特許文献2のような埋め込み型電極太陽電池の製造方法において二段エミッタを得るためには、n型拡散層を形成する熱処理を行った後、高濃度n型拡散層を形成する熱処理を行うため、最低2回のドーパントの熱拡散を行う必要があり、工程が煩雑となって製造コストの増加を招く。
しかし、このようなインクジェット方式において、ドーパントとしてリン酸などを用いると腐食対策が必要であり、装置が複雑となる上に、メンテナンスも煩雑となる。また、ドーパント濃度や種類が異なる塗布剤をインクジェットで塗り分けても、1回の熱処理で拡散させると、オートドープにより所望の濃度差が得られなくなってしまう。
しかし、この特許文献6による方法では、低濃度拡散層と高濃度拡散層を形成するための拡散熱処理を2回施す必要があり、簡便でない。だからといって熱処理を1回にすると、オートドーピングにより受光面の電極直下以外の部分もドーパントが高濃度となり、高変換効率を示さなくなる。
これにより、拡散マスク形成等、煩雑であった二段エミッタの形成が非常に簡便となり、結果的に製造コストが低減する。また、高濃度拡散層においては充分な表面濃度が保たれるため、容易に低オーミックコンタクトが形成でき、製造歩留まりを高レベルで維持しながら高性能の太陽電池を製造できる。
このようなスピン塗布法に対して、特許文献9のようにスクリーン印刷法は材料を無駄にすることなく、短時間の印刷処理で多くの拡散剤を基板の表面に積層させることができる。
特に、有機バインダーを含むことにより、スクリーン製版におけるメッシュ開口部からの抜け性を良好なものとすることができ、固形分を含有することにより、該固形分の含有量を調整すれば拡散用リンペースト印刷後の乾燥における膜厚の減少、焼成における収縮を簡単に調整することができる。
このように、ドープ剤である有機リン化合物がリン酸基をもつ高分子モノマー及び/又はリン酸基をもつ高分子モノマー誘導体であることにより、リン酸基のリンが、形成する拡散層のドーパント源となる。なお、リン酸基をもつ高分子モノマー及び/又はリン酸基をもつ高分子モノマー誘導体は市販品を用いることができ、材料を簡単に入手することができる。
このように、チクソ剤の固形分が粒子状シリカ、有機バインダーがポリ酢酸ビニルであることにより、粒子状シリカはペースト印刷後の乾燥における膜厚の減少、焼成における収縮を抑制し易く、ポリ酢酸ビニルはメッシュ開口部からの抜け性を制御し易い。
このように、拡散用リンペーストに含まれる有機溶剤として、その沸点が100℃以上の高沸点溶剤を使用したものであることにより、通常の印刷環境において溶剤の揮発による組成変化がなく、安定した印刷が可能なペーストとすることができる。
このように、拡散用リンペーストが珪素アルコキシドを含むものであることにより、珪素アルコキシドは、ドープ剤の有機リン化合物と、固形分の粒子状シリカとのリンカーとなり、拡散熱処理において、リン成分とシリカとの焼結を促進する効果があるため、リンの外方拡散を更に防止することができる。また、珪素アルコキシドは、原料が安価で入手し易い点で好ましい。
このように、上記拡散用リンペーストを使用して太陽電池を製造することにより、上記拡散用リンペーストは連続印刷の回数が従来よりも大幅に改善することが可能であるため、歩留まり良く高品質の太陽電池を製造でき、その製造コストを大幅に削減することができる。また、上記有機性の拡散用リンペーストを使用すれば、例えば高濃度拡散層と低濃度拡散層とを1度の拡散熱処理で行うことが可能であり、煩雑な手順とならず、簡単な工程とすることができる。
また、本発明の拡散用リンペーストを使用して太陽電池を製造することにより、簡単な手順で歩留まり良く高品質の太陽電池を製造でき、連続印刷に用いる製版の使用回数を増やすことができるため、その製造コストを大幅に削減することができる。
まず、本発明の有機性の拡散用リンペーストの一実施形態について説明する。
本発明の拡散用リンペーストは、基板に拡散層を形成するためにスクリーン印刷により基板上に塗布されるときに使用される拡散用リンペーストであって、少なくとも、拡散層のドーパントとなるリンを含有するドープ剤と、有機バインダー及び固形分を含有するチクソ剤と、有機溶剤とを含有するものである。
特に本発明では、拡散用リンペーストとしてドーパントとなるリンを含有するドープ剤は有機リン化合物である。
更に、連続印刷可能回数が大幅に改善するため、スクリーン製版の洗浄の回数が減り、デバイス製造における歩留まりの向上、及びコスト削減につながる。
特に、有機バインダーを含むことにより、スクリーン製版におけるメッシュ開口部からの抜け性を良好なものとすることができ、固形分を含有することにより、該固形分の含有量を調整すれば拡散用リンペースト印刷後の乾燥における膜厚の減少、焼成における収縮を簡単に調整することができる。
これにより、リン酸基のリンが、形成する拡散層のドーパント源となる。リン酸基をもつ高分子モノマー及び/又はリン酸基をもつ高分子モノマー誘導体は市販品を用いることができ、材料を簡単に入手することができる。
(A) CH2=C(CH3)COO(C2H4O)nP=O(OH)2
n=1(アシッドホスホオキシエチルメタクリレート)
ユニケミカル(株);ホスマーM、日本化薬(株);カヤマーPM-1、共栄社油脂(株);ライトエステルP-M、新中村化学(株);NKエステルSA
n=2
ユニケミカル(株);ホスマーPE2
n=4~5(アシッドホスホオキシポリオキシエチレングリコールモノメタクリレート)
ユニケミカル(株);ホスマーPE
n=8
ユニケミカル(株);ホスマーPE8
(B) [CH2=C(CH3)COO(C2H4O)n]mP=O(OH)3-m
n=1、m=1と2の混合物
大八化学(株);MR-200
(C) CH2=CHCOO(C2H4O)nP=O(OH)2
n=1
ユニケミカル(株);ホスマーA、共栄社油脂(株);ライトエステルP-A
(D) [CH2=CHCOO(C2H4O)n]mP=O(OH)3-m
n=1、m=1と2の混合物
大八化学(株);AR-200
(E) CH2=C(CH3)COO(C2H4O)nP=O(OC4H9)2
n=1
大八化学(株);MR-204
(F) CH2=CHCOO(C2H4O)nP=O(OC4H9)2
n=1
大八化学(株);AR-204
(G) CH2=C(CH3)COO(C2H4O)nP=O(OC8H17)2
n=1
大八化学(株);MR-208
(H) CH2=CHCOO(C2H4O)nP=O(OC8H17)2
n=1
大八化学(株);AR-208
(I) CH2=C(CH3)COO(C2H4O)nP=O(OH)(ONH3C2H4OH)
n=1
ユニケミカル(株);ホスマーMH
(J) CH2=C(CH3)COO(C2H4O)nP=O(OH)(ONH(CH3)2C2H4OCOC(CH3)=CH2)
n=1
ユニケミカル(株);ホスマーDM
(K) CH2=C(CH3)COO(C2H4O)nP=O(OH)(ONH(C2H5)2C2H4OCOC(CH3)=CH2)
n=1
ユニケミカル(株);ホスマーDE
(L) CH2=CHCOO(C2H4O)nP=O(O-ph)2 (ph:ベンゼン環を示す)
n=1
大八化学(株);AR-260
(M) CH2=C(CH3)COO(C2H4O)nP=O(O-ph)2 (ph:ベンゼン環を示す)
n=1
大八化学(株);MR-260
(N) [CH2=CHCOO(C2H4O)n]2P=O(OC4H9)
n=1
大八化学(株);PS-A4
(O) [CH2=C(CH3)COO(C2H4O)n]2P=O(OH)
n=1
大八化学(株);MR-200、日本化薬(株);カヤマーPM-2、日本化薬(株);カヤマーPM-21
(P) [CH2=CHCOO(C2H4O)n]3P=O
n=1
大阪有機(株);ビスコート3PA
上記以外の有機リン化合物でも、いずれもリンソースとして使用可能である。
このような範囲が望ましい理由は、金属電極とのオーミックコンタクトがより良好となり、太陽電池の変換効率が低下するおそれがなく、且つ、また、アウトディフュージョン(外方拡散)による低濃度拡散層のシート抵抗の低下が少なく、準位増加による短絡電流低下と共に変換効率を低下させてしまうおそれもないためである。
チクソ剤のうち固形分の粒子状シリカは、拡散用リンペースト100質量部中5~15質量部含有したものであることが望ましい。
また、ペースト中の固形分の比率を10質量%以上とすることが望ましい。これにより、拡散ペースト印刷後の乾燥における膜厚の減少、焼成における収縮を抑制することができ、膜厚の厚いリンガラス層を得ることができる。
更に、有機バインダーの重合度は200~2000であることが望ましく、更に好ましくは400~800である。
このような線状有機ポリマーの例としては、ポリ酢酸ビニル、アクリル樹脂(ポリアクリル酸類及びそれらの塩、ヒドロキシエチルアクリレートのホモポリマー及びコポリマー、ヒドロキシプロピルアクリレートのホモポリマー及びコポリマー、ヒドロキシブチルアクリレートのホモポリマー及びコポリマー)、ポリビニルアセタール樹脂(ポリビニルアセテート又は加水分解度が60質量%以上、好ましくは80質量%以上である加水分解ポリビニルアセテート、ポリビニルホルマール、ポリビニルブチラール、ポリビニルアルコール)、ポリウレタン樹脂、ポリウレア樹脂、ポリイミド樹脂、ポリアミド樹脂、エポキシ樹脂、メタクリル樹脂(ポリメタクリル酸類及びそれらの塩、ヒドロキシメタクリレートのホモポリマー及びコポリマー、ヒドロキシエチルメタクリレートのホモポリマー及びコポリマー)、ポリスチレン系樹脂、ノボラック型フェノール系樹脂、ポリエステル樹脂、合成ゴム、天然ゴム(アラビアゴム)等が挙げられる。
また、有機バインダーがポリ酢酸ビニルである場合、拡散用リンペースト100質量%中、ポリ酢酸ビニルは5~30質量%含有することが望ましい。これにより、スクリーン開口部からの抜け性が良好であり、印刷パターンの滲みを抑制でき、レベリング性の良好なペーストが得られる。
特に、好適な有機溶剤の具体例を挙げるなら、高沸点溶剤としてTPM(イソブチル酸3-ヒドロキシ-2,2,4-トリメチルペンチルエステル:Isobutylic Acid 3-Hydroxy-2,2,4-trimethylpentyl Ester)を用いることができる。
しかしながら、高沸点溶剤として使用可能な化合物はこれに限定されない。
脂肪族炭化水素系溶剤としては、例えば、出光興産社製「IPソルベント」、シェル化学社製「Shellsol D40」(Shellsolは登録商標)、「Shellsol D70」、「Shellsol 70」、「Shellsol 71」、Exxon社製「Isopar G」、「Isopar H」、「Isopar L」、「Isopar M」、「Exxol D40」、「Exxol D80」、「Exxol D100」、「Exxol D130」(沸点:279~316℃)、「Exxol D140」(沸点:280~320℃)、「Exxol DCS100/140」等が挙げられる。
図1は製造する太陽電池の概略図であり、図2は本発明に係る有機性の拡散用リンペーストを用いた太陽電池の製造方法を説明する図である。また、図3は、図2のフローのイメージ図である。
なお、図1~3において、1は基板、2は高濃度拡散層、3は低濃度拡散層、4はパッシベーション膜兼反射防止膜、5はBSF層、6は裏面電極、7は受光面櫛形電極、8は有機性拡散用リンペースト(スクリーン印刷用)、9は拡散剤(スピン塗布用)である。
太陽電池は通常、表面に凹凸形状を形成するのが好ましい。その理由は、可視光域の反射率を低減させるために、できる限り2回以上の反射を受光面で行わせる必要があるためである。これら一つ一つの山のサイズは1~20μm程度でよい。代表的な表面凹凸構造としてはV溝,U溝が挙げられる。これらは、研削機を利用して、形成可能である。また、ランダムな凹凸構造を作るには、水酸化ナトリウムにイソプロピルアルコールを加えた水溶液に浸してウェットエッチングしたり、他には、酸エッチングやリアクティブ・イオン・エッチング等を用いることが可能である。なお、図1,3では両面に形成したテクスチャ構造は微細なため省略している。
具体的には、p型の半導体基板に高濃度拡散層を形成するための有機性の拡散用リンペーストを複数のラインもしくはドットパターンに印刷し、次に低濃度拡散層を形成するための有機性の拡散用リンペーストを、前記半導体基板1上に塗布した高濃度拡散層を形成するための有機性の拡散用リンペーストの少なくとも一部に接するように印刷する。そして、この2種類の拡散用リンペーストが印刷された基板に対して熱処理を施す。
このとき、高濃度拡散層を形成するための有機性の拡散用リンペースト中に含まれるリンの含有率は、低濃度拡散層を形成するための有機性の拡散用リンペースト中に含まれるリンの含有率に対して2倍以上とすることが好ましい。
次に、スクリーン印刷装置を用い、裏面に例えばアルミニウムからなるペーストを塗布し、乾燥させる。更に表面側もスクリーン印刷装置を用い、櫛形電極パターン印刷版を用いてAg電極を印刷し、乾燥させる。なお、BSF層5はアルミニウム印刷後の焼成工程で形成される。
その後、所定の熱プロファイルにより焼成を行い、裏面電極6および表面櫛形電極7を形成する。これら電極形成は真空蒸着法、スパッタリング法等、上記印刷法だけによらなくとも可能である。
これにより、図1に示すような太陽電池を簡単な手法で製造することができる。
このように連続的に印刷するために使用されるスクリーン製版は、使用回数を重ねれば重ねるほど、メッシュ開口部の目詰まりが多くなるが、本発明の上記有機性拡散用リンペーストを使用すれば、粘度が湿度による周囲の環境に影響を受けずに所望の粘度に制御され、連続印刷の安定性に優れた有機性拡散用リンペーストであるため、1枚のスクリーン製版での連続印刷の回数を大幅に改善することができる。
(実施例1)
<拡散用リンペーストの作製>
以下の材料を配合して有機性の拡散用リンペーストを作製した。
○ドープ剤(リンを含む)
ホスマーM(ユニケミカル社製)及びホスマーMH(ユニケミカル社製):200g
○チクソ剤(固形分)
微粒子シリカ(サイズは、約1.5μm):75g
○チクソ剤(有機バインダー)
ポリ酢酸ビニル(重合度約500):100g
○有機溶剤
TPM(イソブチル酸3-ヒドロキシ-2,2,4-トリメチルペンチルエステル:Isobutylic Acid 3-Hydroxy-2,2,4-trimethylpentyl Ester)(沸点244℃):320g
<太陽電池の製造>
実施例1で配合した有機性の拡散用リンペーストを使用して、上記太陽電池の製造方法の実施形態で説明した方法で太陽電池を製造した。
このとき、用意した基板は、結晶面方位(100)、15.65cm角200μm厚、アズスライス比抵抗2Ω・cm(ドーパント濃度7.2×1015cm-3)ガリウムドープp型単結晶シリコン基板である。
その詳細は、まず、実施例1の有機性の拡散用リンペーストをスクリーン印刷装置によって印刷した。このときの印刷パターンは2mmピッチ、150μm幅ラインとした。印刷したものは700~800℃で5分間ベークし、その後、五酸化二リン及び珪素アルコキシドを含有したスピン塗布用の拡散剤を同一面上に5000rpm、15秒の条件でスピン塗布した。これを熱処理炉に入れ、880℃で40分間保持し、取り出した。
また、太陽電池を25℃の雰囲気の中、ソーラーシミュレータ(光強度:1kW/m2,スペクトル:AM1.5グローバル)の下で電流電圧特性を測定した結果、表1のような結果となった。表1は、100個の太陽電池を製造して、特性を測定した平均値である。
更に、実施例1で配合した有機性拡散用リンペーストを使用した実施例2の工程で大量の基板から連続的に太陽電池の製造を行った。
その結果、連続的にスクリーン印刷する工程において、スクリーン製版を1度もクリーニングすることなく、スクリーン製版の寿命である30000回まで拡散用リンペーストを印刷することができた。
<拡散用リンペーストの作製>
リン酸:50g、ポリビニルアルコール:100g、シリカ:100g、エタノール:200g、水:30gを配合し、水溶性の拡散用リンペーストを作製した。
<太陽電池の製造>
比較のため、比較例1で作製した拡散用リンペーストを高濃度拡散層を形成するために使用したこと以外は、実施例2と同様の方法で、太陽電池の製造を行った。
また、太陽電池を25℃の雰囲気の中、ソーラーシミュレータ(光強度:1kW/m2,スペクトル:AM1.5グローバル)の下で電流電圧特性を測定した結果、表1のような結果となった。表1は、100個の太陽電池を製造して、特性を測定した平均値である。
更に、比較例1で配合した水溶性拡散用リンペーストを使用した比較例2の工程で大量の基板から連続的に太陽電池の製造を行った。
その結果、連続的にスクリーン印刷する工程において、スクリーン製版は2500回程度の印刷回数でメッシュ開口部の目詰まりが著しくなり、クリーニングしないと使用できない状態となった。
図4より、本発明の有機性拡散用リンペーストを使用したほうが、印刷可能回数が圧倒的に多いことが分かる。従って、実施例1によって作製した本発明に係る有機性の拡散用リンペーストを太陽電池の製造工程に利用することで、製造歩留まりは向上し、優れているといえる。これにより、太陽電池市場において競争力の強い製品を生み出すことが可能である。
なお、上記では半導体装置の一つである太陽電池について詳述したが、本発明は太陽電池だけに限定されるものでなく、面内に表面濃度の異なる拡散層を有する他の半導体装置についても、本発明の有機性の拡散用リンペーストが適用できることは言うまでもない。
Claims (7)
- 基板に拡散層を形成するためにスクリーン印刷により基板上に塗布される拡散用リンペーストであって、該拡散用リンペーストは少なくとも、
前記拡散層のドーパントとなるリンを含有するドープ剤と、
有機バインダー及び固形分を含有するチクソ剤と、
有機溶剤とを含有するものであり、
前記ドープ剤は、有機リン化合物であることを特徴とする拡散用リンペースト。 - 前記有機リン化合物は、リン酸基をもつ高分子モノマー及び/又はリン酸基をもつ高分子モノマー誘導体であることを特徴とする請求項1に記載の拡散用リンペースト。
- 前記固形分は、粒子状シリカであることを特徴とする請求項1又は2に記載の拡散用リンペースト。
- 前記有機バインダーは、ポリ酢酸ビニルであることを特徴とする請求項1乃至3のいずれか1項に記載の拡散用リンペースト。
- 前記有機溶剤は、沸点が100℃以上の高沸点溶剤であることを特徴とする請求項1乃至4のいずれか1項に記載の拡散用リンペースト。
- 更に、珪素アルコキシドを含むものであることを特徴とする請求項1乃至5のいずれか1項に記載の拡散用リンペースト。
- 請求項1乃至6のいずれか1項に記載の拡散用リンペーストを用いて、スクリーン印刷により前記拡散用リンペーストを基板に塗布し、該基板に熱処理を施して拡散層を形成することを特徴とする太陽電池の製造方法。
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| CN200980114553.7A CN102017087B (zh) | 2008-03-21 | 2009-03-18 | 扩散用磷糊料和利用该磷糊料制造太阳能电池的方法 |
| JP2010503902A JP5375821B2 (ja) | 2008-03-21 | 2009-03-18 | 拡散用リンペースト及びそれを利用した太陽電池の製造方法 |
| EP09721858.0A EP2270841B1 (en) | 2008-03-21 | 2009-03-18 | Phosphorus paste for diffusion and process for producing solar battery utilizing the phosphorus paste |
| AU2009226511A AU2009226511B2 (en) | 2008-03-21 | 2009-03-18 | Phosphorus paste for diffusion and process for producing solar battery utilizing the phosphorus paste |
| US12/933,738 US8405176B2 (en) | 2008-03-21 | 2009-03-18 | Phosphorus paste for diffusion and process for producing solar battery utilizing the phosphorus paste |
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| JP2008074672 | 2008-03-21 | ||
| JP2008-074672 | 2008-03-21 |
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| EP (1) | EP2270841B1 (ja) |
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| KR (1) | KR101631711B1 (ja) |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20090101096A (ko) | 2009-09-24 |
| EP2270841B1 (en) | 2018-08-22 |
| JPWO2009116569A1 (ja) | 2011-07-21 |
| US20110045624A1 (en) | 2011-02-24 |
| CN102017087A (zh) | 2011-04-13 |
| JP5375821B2 (ja) | 2013-12-25 |
| KR101631711B1 (ko) | 2016-06-17 |
| US8405176B2 (en) | 2013-03-26 |
| TW200952049A (en) | 2009-12-16 |
| AU2009226511A1 (en) | 2009-09-24 |
| CN102017087B (zh) | 2014-04-16 |
| MY156738A (en) | 2016-03-31 |
| TWI460770B (zh) | 2014-11-11 |
| EP2270841A4 (en) | 2017-08-23 |
| EP2270841A1 (en) | 2011-01-05 |
| AU2009226511B2 (en) | 2014-07-31 |
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