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WO2009145581A3 - 산화물 반도체 및 이를 포함하는 박막 트랜지스터 - Google Patents

산화물 반도체 및 이를 포함하는 박막 트랜지스터 Download PDF

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Publication number
WO2009145581A3
WO2009145581A3 PCT/KR2009/002855 KR2009002855W WO2009145581A3 WO 2009145581 A3 WO2009145581 A3 WO 2009145581A3 KR 2009002855 W KR2009002855 W KR 2009002855W WO 2009145581 A3 WO2009145581 A3 WO 2009145581A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxide semiconductor
thin film
film transistor
transistor including
including same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/002855
Other languages
English (en)
French (fr)
Other versions
WO2009145581A2 (ko
Inventor
김창정
김상욱
김선일
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to CN200980119801.7A priority Critical patent/CN102067319A/zh
Priority to EP09755046.1A priority patent/EP2302685B1/en
Priority to JP2011511515A priority patent/JP2011525041A/ja
Publication of WO2009145581A2 publication Critical patent/WO2009145581A2/ko
Publication of WO2009145581A3 publication Critical patent/WO2009145581A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors

Landscapes

  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)

Abstract

Zn, In 및 Hf을 포함하며, Zn, In 및 Hf 원자의 전체 함량 대비 Hf 원자 함량의 조성비가 2 내지 16 at%인 산화물 반도체 및 이를 포함하는 박막 트랜지스터를 제공한다.
PCT/KR2009/002855 2008-05-29 2009-05-29 산화물 반도체 및 이를 포함하는 박막 트랜지스터 Ceased WO2009145581A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200980119801.7A CN102067319A (zh) 2008-05-29 2009-05-29 氧化物半导体及包含该氧化物半导体的薄膜晶体管
EP09755046.1A EP2302685B1 (en) 2008-05-29 2009-05-29 Thin film transistor including oxide semiconductor
JP2011511515A JP2011525041A (ja) 2008-05-29 2009-05-29 酸化物半導体及びこれを含む薄膜トランジスタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080050466A KR101468591B1 (ko) 2008-05-29 2008-05-29 산화물 반도체 및 이를 포함하는 박막 트랜지스터
KR10-2008-0050466 2008-05-29

Publications (2)

Publication Number Publication Date
WO2009145581A2 WO2009145581A2 (ko) 2009-12-03
WO2009145581A3 true WO2009145581A3 (ko) 2010-03-04

Family

ID=41377803

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/002855 Ceased WO2009145581A2 (ko) 2008-05-29 2009-05-29 산화물 반도체 및 이를 포함하는 박막 트랜지스터

Country Status (6)

Country Link
US (1) US7816680B2 (ko)
EP (1) EP2302685B1 (ko)
JP (1) JP2011525041A (ko)
KR (1) KR101468591B1 (ko)
CN (1) CN102067319A (ko)
WO (1) WO2009145581A2 (ko)

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JP5627071B2 (ja) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
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KR20100135544A (ko) * 2009-06-17 2010-12-27 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
TW201103090A (en) * 2009-07-01 2011-01-16 Univ Nat Chiao Tung Method for manufacturing a self-aligned thin film transistor and a structure of the same
WO2011065230A1 (en) * 2009-11-30 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
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KR101035357B1 (ko) * 2009-12-15 2011-05-20 삼성모바일디스플레이주식회사 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자
WO2011074393A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
KR101603768B1 (ko) * 2009-12-22 2016-03-15 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 평판표시장치
KR101848516B1 (ko) * 2010-01-15 2018-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102714029B (zh) * 2010-01-20 2016-03-23 株式会社半导体能源研究所 显示装置的显示方法
CN102714209B (zh) * 2010-01-22 2015-09-16 株式会社半导体能源研究所 半导体存储器件及其驱动方法
KR101893904B1 (ko) * 2010-01-29 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR102586642B1 (ko) * 2010-02-18 2023-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011118351A1 (en) * 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5727832B2 (ja) * 2010-03-31 2015-06-03 株式会社半導体エネルギー研究所 トランジスタ
US8912536B2 (en) 2010-11-19 2014-12-16 Samsung Electronics Co., Ltd. Transistors, methods of manufacturing the same and electronic devices including transistors
JP5723262B2 (ja) * 2010-12-02 2015-05-27 株式会社神戸製鋼所 薄膜トランジスタおよびスパッタリングターゲット
KR101891650B1 (ko) * 2011-09-22 2018-08-27 삼성디스플레이 주식회사 산화물 반도체, 이를 포함하는 박막 트랜지스터, 및 박막 트랜지스터 표시판
CN102351528B (zh) * 2011-09-28 2013-07-10 华南理工大学 硼化镧掺杂的氧化物半导体材料及其应用
KR102100425B1 (ko) * 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8841665B2 (en) * 2012-04-06 2014-09-23 Electronics And Telecommunications Research Institute Method for manufacturing oxide thin film transistor
JP6662432B2 (ja) * 2013-06-28 2020-03-11 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置及びシステム
KR20160048538A (ko) 2014-10-24 2016-05-04 삼성전자주식회사 엑스레이를 검출하는 장치 및 방법, 엑스레이 이미징 시스템
CN107146816B (zh) * 2017-04-10 2020-05-15 华南理工大学 一种氧化物半导体薄膜及由其制备的薄膜晶体管
US11545581B2 (en) * 2019-08-02 2023-01-03 South China University Of Technology Metal oxide (MO) semiconductor and thin-film transistor and application thereof
WO2019005090A1 (en) * 2017-06-30 2019-01-03 Intel Corporation SOURCE AND DRAIN CONTACTS OF SEMICONDUCTOR OXIDE DEVICE COMPRISING GRADUATED INDIUM LAYERS
US11545580B2 (en) * 2017-11-15 2023-01-03 South China University Of Technology Metal oxide (MO semiconductor and thin-film transistor and application thereof
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Also Published As

Publication number Publication date
KR20090124329A (ko) 2009-12-03
KR101468591B1 (ko) 2014-12-04
EP2302685A4 (en) 2011-07-06
JP2011525041A (ja) 2011-09-08
US7816680B2 (en) 2010-10-19
EP2302685B1 (en) 2014-04-09
WO2009145581A2 (ko) 2009-12-03
CN102067319A (zh) 2011-05-18
EP2302685A2 (en) 2011-03-30
US20090294764A1 (en) 2009-12-03

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