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WO2009145092A1 - Source de puissance d'impulsion bipolaire et dispositif de source de puissance par connexion d'une pluralité de sources de puissance d'impulsion bipolaire en parallèle - Google Patents

Source de puissance d'impulsion bipolaire et dispositif de source de puissance par connexion d'une pluralité de sources de puissance d'impulsion bipolaire en parallèle Download PDF

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Publication number
WO2009145092A1
WO2009145092A1 PCT/JP2009/059272 JP2009059272W WO2009145092A1 WO 2009145092 A1 WO2009145092 A1 WO 2009145092A1 JP 2009059272 W JP2009059272 W JP 2009059272W WO 2009145092 A1 WO2009145092 A1 WO 2009145092A1
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Prior art keywords
power supply
output
bipolar pulse
pulse power
switching
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Ceased
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PCT/JP2009/059272
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English (en)
Japanese (ja)
Inventor
芳邦 堀下
敦 小野
稔 赤石
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Ulvac Inc
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Ulvac Inc
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • the present invention relates to a bipolar pulse power supply for supplying plasma and a surface treatment apparatus in the form of a bipolar pulse, and a power supply apparatus in which a plurality of bipolar pulse power supplies are connected in parallel.
  • This type of bipolar pulse power source is used in, for example, a sputtering apparatus for forming a predetermined thin film on the surface of a processing substrate, and is connected to a rectifier circuit for supplying DC power and to positive and negative output terminals of this rectifier circuit, and four switching devices.
  • a device having a MOSFET bridge circuit composed of elements is known. Then, each switching element is appropriately operated by the control means, and an arbitrary pulse voltage is applied to a pair of targets that are output terminals (electrodes) by alternately switching the polarity at a predetermined frequency.
  • electrodes By alternately switching to electrodes, a glow discharge is generated between the anode electrode and the cathode electrode to form a plasma atmosphere, and each target is sputtered. Accordingly, there is an advantage that the charge accumulated on the target surface is canceled when an opposite phase voltage is applied, and a stable discharge can be obtained (for example, Patent Document 1).
  • the bipolar pulse power supply is provided with a detection circuit that detects the output current from the bridge circuit and an inductor that suppresses an increase in current when arc discharge occurs, and the output current detected by the detection circuit is the steady output current.
  • the switching element in operation is switched, and the output to the electrode is once cut off.
  • the overcurrent is calmed down and the value becomes close to the steady output current value, the output to the electrode is resumed.
  • the output current changes beyond a certain range, it can be regarded as a pre-stage phenomenon (micro arc) of abnormal discharge, and by performing the arc extinguishing process, the occurrence of arc discharge with a large amount of current change can be suppressed.
  • Japanese Patent No. 3639605 Japanese Patent No. 3639605
  • the capacitance component (capacitance) component is dominant over the inductance component. For this reason, when the arc discharge occurs, the impedance on the plasma load side becomes small (in some cases, it becomes small to several ohms or less), so that the output and the plasma (load) are combined to suddenly move from the capacitive component to the output side. Released. As a result, even if an inductor with a small inductance value is provided, the current rise cannot be suppressed efficiently, and overcurrent flows in a short time (between several ⁇ S) (that is, the current rise rate per unit time when arc discharge occurs). High).
  • an object of the present invention is to provide a bipolar pulse power supply that can effectively limit an increase in current when arc discharge occurs and can suppress the occurrence of splash and particles, and a power supply device that is formed by connecting a plurality of these bipolar pulse power supplies in parallel.
  • Japanese Patent No. 3639605 see, for example, claim 1, paragraph number 0016).
  • a bipolar pulse power supply is a bridge circuit composed of switching elements connected between positive and negative DC outputs from a DC power supply source, and each switching element of the bridge circuit. And a control means for controlling switching between on and off, and a bipolar pulse power supply that supplies power to the pair of electrodes in contact with the plasma in a bipolar pulse shape at a predetermined frequency.
  • An inductor having a value of 1 mH or more is provided in at least one of the DC outputs.
  • the control means when the DC power is supplied from the DC power supply source to the bridge circuit, the control means turns on two switching elements that are output to one of the switching elements constituting the bridge circuit. Power is supplied (output) to one electrode. Next, when the switching element outputting to one electrode is turned off and the two switching elements output to the other electrode are turned on, the output is output to the other electrode.
  • power is supplied to the pair of electrodes in contact with the plasma in a bipolar pulse shape at a predetermined frequency.
  • a voltage higher than a normal discharge voltage may be generated when switching each switching element of the bridge circuit. That is, when an inductance component is generated in the plasma, an overvoltage is generated at the time of polarity reversal at each electrode. If an overvoltage occurs in this manner, arc discharge may be induced. Therefore, a capacitor connected in parallel to the positive and negative DC outputs from the DC power supply source and the inductor connected in parallel and connected in series with each other. If the output clamp circuit further includes a diode and a resistor, when the polarity is reversed, the output to the electrode initially has a constant voltage characteristic, and the output current gradually increases.
  • the output to the electrode has a constant current characteristic. As a result, it is possible to prevent an overvoltage from occurring at the time of polarity reversal at each electrode, and to suppress the occurrence of arc discharge due to the overcurrent.
  • the electrodes are a pair of targets arranged in a processing chamber in which a sputtering method is performed.
  • a switching element for output short circuit provided between positive and negative DC outputs from the DC power supply source to the bridge circuit, detection means for detecting an output current between the pair of electrodes, and an absolute value of the output current is
  • An abnormal discharge detection means that captures as a pre-stage phenomenon of occurrence of abnormal discharge when a steady output current value to the electrode is exceeded, and when the pre-stage phenomenon of occurrence of abnormal discharge is caught by the abnormal discharge detection means, the switching for the output short circuit What is necessary is just to perform arc extinguishing processing of abnormal discharge by interrupting the output to the electrode by the element.
  • a power supply device is a power supply device in which a plurality of bipolar pulse power supplies according to claim 4 are connected in parallel, and a plurality of pairs arranged in the same processing chamber.
  • an overall control means for controlling on / off switching of a switching element for output short-circuiting of each bipolar pulse power supply.
  • the current increase at the time of occurrence of arc discharge is effectively limited, and as a result, the generation of splash and particles is effectively suppressed, and a good thin film There is an effect that the formation becomes possible.
  • E is a bipolar pulse power source according to the present invention.
  • the bipolar pulse power source E is disposed, for example, facing a processing substrate in a sputtering apparatus and is a pair of targets that are electrodes in contact with plasma P It is used to supply power in the form of bipolar pulses at a predetermined frequency to T1 and T2.
  • the bipolar pulse power source E includes a DC power supply unit 1 that can supply DC power and an oscillation unit 2 that controls output (power supply) to each of the targets T1 and T2.
  • the waveform of the output voltage is a substantially square wave or a substantially sine wave.
  • the DC power supply unit 1 includes a first CPU circuit 11 that controls the operation thereof, an input unit 12 to which commercial AC power (three-phase AC 200 V or 400 V) is input, and rectifies the input AC power to generate a DC.
  • the rectifier circuit 13 includes six diodes 13a that convert power into power, and outputs DC power to the oscillation unit 2 via positive and negative DC power lines 14a and 14b.
  • the DC power supply unit 1 is connected to a switching transistor (switching element) 15 provided between the DC power lines 14a and 14b and the first CPU circuit 11 so as to be communicable.
  • a driver circuit 16 for output oscillation to be controlled is provided.
  • a detection circuit 17a for detecting the current and voltage is connected between the DC power lines 14a and 14b, and the current and voltage detected by the detection circuit 17a are supplied to the first CPU circuit 11 via the AD conversion circuit 17b. It is designed to be entered.
  • the oscillating unit 2 includes four first to fourth terminals connected between the second CPU circuit 21 communicatively connected to the first CPU circuit 11 and the positive and negative DC power lines 14a and 14b.
  • a bridge circuit 22 composed of the switching transistors SW1 to SW4, and a driver circuit 23 for output oscillation that is connected to the second CPU circuit 21 so as to be communicable and controls on / off switching of the switching transistors SW1 to SW4. Is provided.
  • the output oscillation driver circuit 23 switches each switching so that, for example, the ON and OFF timings of the first and fourth switching transistors SW1 and SW4 and the second and third switching transistors SW2 and SW3 are reversed.
  • power is supplied in a bipolar pulse form to the pair of targets T1 and T2 via the output lines 24a and 24b from the bridge circuit 22.
  • a detection circuit 25 for detecting an output current and an output voltage to the pair of targets T1 and T2 is connected to the output lines 24a and 24b.
  • the output current and the output voltage detected by the detection circuit 25 are converted into an AD conversion circuit 26. Is input to the second CPU circuit 21 via the.
  • the first and fourth switching transistors SW1 and SW4 are turned on when the switching transistor SW0 is short-circuited (ON). Thereafter, the short circuit of the switching transistor SW0 is released (turned off) and output to one target T1 (a negative potential is applied to the target T1). Next, the switching transistor SW0 is short-circuited again, the first and fourth switching transistors SW1 and SW4 are turned off, the second and third switching transistors SW2 and SW3 are turned on, and then the switching transistor SW0 is turned off. Output to the other target T2 (a negative potential is applied to the target T2).
  • the switching loss that occurs when outputting to the targets T1 and T2 occurs only in the switching transistor SW0, and almost no switching loss occurs in each of the switching transistors SW1 to SW4.
  • high durability can be achieved without using a high-performance switching element, and a sufficient heat dissipation mechanism is not required as in the case where switching loss occurs with four switching elements, resulting in lower costs. I can plan.
  • an arc detection control circuit 27 to which the output current and output voltage detected by the detection circuit 25 are input is provided in the second CPU circuit 21 so as to be communicable (see FIG. 1). Is changed beyond a certain range, it is regarded as a phenomenon before the arc discharge (micro arc), and the arc extinguishing process is performed to suppress the occurrence of arc discharge with a large arc current.
  • the capacitance component (capacitance) component is dominant over the inductance component.
  • the capacitance component (capacitance) component is dominant, the impedance on the plasma load side becomes small at the time of arc discharge, so that the output and the plasma load are combined, and the capacitance component suddenly outputs. To the side. For this reason, a large arc current flows within the time from the detection of the arc discharge by the detection means to the interruption of the output to the electrode. As a result, if the arc discharge cannot be extinguished by a single process, the arc current value increases (the emitted arc energy increases) each time the micro arc process is performed, and splash and particles are likely to occur.
  • the output voltage to the pair of targets T1 and T2 is 500V
  • the output current is 100A
  • the micro arc process (output cut-off) time is 200 ⁇ S
  • the rate of current increase until the output is cut off after overcurrent is detected.
  • ⁇ i is 50A.
  • the inductor 28 having an inductance value of 2 mH may be connected to the negative DC output line 14b.
  • the negative DC output line 14b is provided with the inductor 28 having a value of 1 mH or more, preferably 2 mH or more.
  • the present invention is not limited to this, and the positive DC output line 14a is not limited thereto.
  • both the positive and negative DC output lines 14a and 14b may be provided.
  • the arc detection control circuit 27 catches the current state before the occurrence of the arc discharge as a second CPU circuit.
  • the output short circuit switching transistor SW0 is short-circuited (turned on) by the output oscillation driver circuit 23 via the control circuit 21 and the arc detection control circuit 27.
  • the inductor 28 in the DC output line 14b the output from the DC power supply unit 1 has a constant current characteristic, and the rate of current increase when arc discharge occurs is limited.
  • the short circuit of the output short circuit switching transistor SW0 is released (turned off), and one of the targets T1 is selected according to the operating state of each of the switching transistors SW1 to SW4. , The output to T2 is resumed.
  • the arc detection control circuit 27 determines whether or not the output current Va exceeds the steady output current value Vc. If the steady output current value Vc is still exceeded, the output oscillation driver circuit 23 performs switching for output short-circuiting. The transistor SW0 is short-circuited again.
  • the emitted arc energy can be reduced and the generation of splash and particles can be effectively suppressed.
  • the switching transistors SW1 to SW4 of the bridge circuit 22 generate almost no switching loss, so that the durability can be further improved.
  • the switching elements SW1 to SW4 of the bridge circuit 22 are switched at a predetermined frequency (for example, 5 kHz) as shown in FIG.
  • a voltage Va higher than the normal discharge voltage Vc is generated. That is, an inductance component is generated in the plasma P, and an overvoltage is generated when the polarities of the targets T1 and T2 are reversed.
  • overvoltage occurs in this way, there is a risk of inducing arc discharge.
  • the capacitor C connected in parallel to the positive and negative DC output lines 14a and 14b from the DC power supply unit 1, and the diode D connected in parallel to the inductor 28 and connected in series to each other. And an output clamp circuit 29 connected to the resistor R.
  • FIGS. 6A and 6B in FIG. 6, only changes in the output voltage and output current in one target T1 are shown
  • each target T1, T2 is shown.
  • the inductor 28 is short-circuited by the diode D connected with the power supply side as the cathode, the outputs to the targets T1 and T2 have constant voltage characteristics, and the output current Ac gradually increases (FIG. 6 (b)).
  • the output current Ac When the output current Ac reaches a predetermined value corresponding to the set power, the output has a constant current characteristic. As a result, overvoltage is prevented from occurring at the time of polarity reversal at each target T1, T2, and the occurrence of arc discharge due to overcurrent is suppressed.
  • the cupacitor C is 5 to 20 ⁇ F
  • the resistor R is several ⁇ to 10 ⁇ .
  • ES is a power supply device of the present invention, and this power supply device ES is used in, for example, a magnetron sputtering apparatus (hereinafter referred to as “sputtering apparatus”) 3 having the following configuration.
  • sputtering apparatus a magnetron sputtering apparatus
  • the sputtering apparatus 3 includes a vacuum chamber 31 that can be maintained at a predetermined vacuum pressure (for example, 10 ⁇ 5 Pa) via vacuum exhausting means (not shown) such as a rotary pump and a turbo molecular pump, Chamber) 32.
  • a substrate holder 33 that holds a large-area processing substrate S used in FPD manufacturing in a floating state in terms of potential is provided.
  • the vacuum chamber 31 is also provided with a gas introduction pipe (not shown) for introducing a process gas into the sputtering chamber 32, and a predetermined thin film is formed by sputtering gas consisting of a rare gas such as Ar or reactive sputtering.
  • reactive gases such as O 2 , N 2, and H 2 O that are appropriately selected according to the composition of the thin film to be formed on the surface of the processing substrate S can be introduced into the processing chamber 32.
  • a plurality of (eight in the present embodiment) targets 41 a to 41 h are arranged in parallel at equal intervals so as to face the processing substrate S.
  • or 41h is produced by a well-known method according to the composition of the thin film to form on the processing board
  • substrate S surface such as Al, Ti, Mo, an indium and tin oxide (ITO), and an indium and tin alloy.
  • ITO indium and tin oxide
  • it is formed in the same shape such as a substantially rectangular parallelepiped (rectangular when viewed from above).
  • Each target 41a to 41h is joined to a backing plate for cooling the target 41a to 41h via a bonding material such as indium or tin during sputtering.
  • Each of the targets 41a to 41h is provided in the vacuum chamber 31 via an insulating member so that the sputtering surface when not in use is located on the same plane parallel to the processing substrate S.
  • a magnet assembly (not shown) having a known structure is disposed behind the targets 41a to 41h (the side facing away from the sputtering surface), and on the front (sputtering surface) side of each of the targets 41a to 41h.
  • Each of the targets 41a to 41h constitutes a pair of adjacent targets (41a and 41b, 41c and 41d, 41e and 41f, 41g and 41h), and is assigned to each pair of targets 41a to 41h.
  • the bipolar pulse power supplies E1 to E4 are provided, and the output lines 24a and 24b from the bipolar pulse power supplies E1 to E4 are connected to each pair of targets 41a and 41b (41c and 41d, 41e and 41f, 41g and 41h). ing.
  • bipolar pulsed power can be supplied to the pair of targets 41a to 41h alternately by the bipolar pulse power sources E1 to E4.
  • each of the polar pulse power sources E1 to E4 is set so that the polarities of the targets 41a to 41h adjacent to each other are reversed. Power is supplied in synchronization (see FIG. 5).
  • an overall control means 5 comprising a CPU communicatively connected to the second CPU circuit 21 of each of the bipolar pulse power supplies E1 to E4 is provided.
  • the switching transistors SW1 to SW4 are operated so that the on / off timings of the switching transistors SW2 and SW3 are inverted and the polarities to the targets 41a to 41h adjacent to each other are inverted, the overall control means 5
  • the short circuit of the switching transistor SW0 is released by the output from, and the signal is output to one of the pair of targets 41a, 41c, 41e, and 41g.
  • the output short circuit switching transistor SW0 of each bipolar pulse power supply E1 to E4 is short-circuited by the output from the overall control means 5, and after switching each switching transistor SW1 to SW4, the switching transistor SW0 is output from the overall control means.
  • the other targets 41b, 41d, 41f and 41h are released to the other targets 41b, 41d, 41f and 41h.
  • electric power is supplied to each of the targets 41a to 41h in the form of a bipolar pulse at a predetermined frequency and is operated synchronously.
  • the overall control means 5 only needs to synchronize the ON / OFF switching timing of the output short-circuiting switching element SW0 of each bipolar pulse power supply E1 to E4.
  • the switching elements SW1 to SW4 can be operated with a sufficient margin, and even if there are individual differences in the switching elements and control circuits of each bipolar pulse power supply, the synchronous operation is easy.
  • Each of the bipolar pulse power supplies E1 to E4 is connected to the bipolar pulse power supply when the output current Ia detected by the detection circuit 25 in any one of the bipolar pulse power supplies exceeds the steady output current value Ic during sputtering.
  • the above-described micro arc process is performed by switching the output short-circuiting switching transistor SW0 by the arc detection control circuit 23.
  • the second of the bipolar pulse power supplies that are output to the adjacent target via the overall control means 5.
  • the output short-circuiting switching transistor SW0 is once short-circuited by the output oscillation driver circuit 23 via the second CPU circuit 21, and the potentials are mutually changed according to the operating states of the switching transistors SW1 to SW4.
  • the operation timing of each of the switching transistors SW1 to SW4 is changed so as to agree with the output short circuit, the short circuit of the output short circuit switching transistor SW0 is released, and the output is output to the target.
  • (A) And (b) is a figure explaining the waveform of the output voltage and output current to one electrode.
  • BRIEF DESCRIPTION OF THE DRAWINGS The figure which illustrates roughly the sputtering apparatus using the power supply device of this invention.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Inverter Devices (AREA)

Abstract

L'invention concerne une source de puissance d'impulsion bipolaire destinée à un dispositif de pulvérisation qui peut efficacement limiter un accroissement de courant lors de la génération de décharge en arc et supprimer la génération de projection et de particules. La source de puissance d'impulsion bipolaire comprend : un circuit en pont (22) formé par des éléments de commutation connectés à une borne de sortie CC positive et négative (14a, 14b) d'une source d'alimentation de puissance CC (1); et un organe de commande (23) qui commande la commutation ON/OFF des éléments de commutation du circuit en pont. La source de puissance d'impulsion bipolaire comprend aussi un inducteur (28) possédant une valeur qui n'est pas inférieure à 1 mH de la sortie CC positive et négative au circuit en pont de la source d'alimentation de puissance.
PCT/JP2009/059272 2008-05-26 2009-05-20 Source de puissance d'impulsion bipolaire et dispositif de source de puissance par connexion d'une pluralité de sources de puissance d'impulsion bipolaire en parallèle Ceased WO2009145092A1 (fr)

Applications Claiming Priority (2)

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JP2008137086A JP5186281B2 (ja) 2008-05-26 2008-05-26 バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP2008-137086 2008-05-26

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9147555B2 (en) 2010-07-20 2015-09-29 Trumpf Huettinger Gmbh + Co. Kg Arc extinction arrangement and method for extinguishing arcs
CN111788331A (zh) * 2017-12-15 2020-10-16 先进工程解决方案全球控股私人有限公司 速率增强脉冲dc溅射系统

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JP5124345B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP5124344B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置並びに出力方法
US11049702B2 (en) 2015-04-27 2021-06-29 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
US9812305B2 (en) 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
JP6572424B2 (ja) * 2015-06-25 2019-09-11 京都電機器株式会社 スパッタ装置用電源装置
JP7468241B2 (ja) * 2020-08-12 2024-04-16 株式会社島津製作所 成膜装置、成膜方法およびプログラム
CN118890759A (zh) * 2024-08-09 2024-11-01 上海硬石科技有限公司 一种应用于交流等离子体激发电源中的电弧管理系统

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JPH06113561A (ja) * 1991-07-31 1994-04-22 Magtron Magneto Elektronische Geraete Gmbh プラズマおよび表面技術の装置に対する電源用の回路装置
JPH07123730A (ja) * 1993-10-18 1995-05-12 High Frequency Heattreat Co Ltd 電流供給型インバータのトリップ動作制御方法
JPH07170748A (ja) * 1993-10-22 1995-07-04 Meidensha Corp オゾン発生装置用電源およびオゾン発生装置の放電管切り離し装置
JP2005151779A (ja) * 2003-11-19 2005-06-09 Kansai Electric Power Co Inc:The 高周波電源装置

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JP4320019B2 (ja) * 2006-01-11 2009-08-26 株式会社アルバック スパッタリング装置
JP5124345B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP5429771B2 (ja) * 2008-05-26 2014-02-26 株式会社アルバック スパッタリング方法
JP5124344B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置並びに出力方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06113561A (ja) * 1991-07-31 1994-04-22 Magtron Magneto Elektronische Geraete Gmbh プラズマおよび表面技術の装置に対する電源用の回路装置
JPH07123730A (ja) * 1993-10-18 1995-05-12 High Frequency Heattreat Co Ltd 電流供給型インバータのトリップ動作制御方法
JPH07170748A (ja) * 1993-10-22 1995-07-04 Meidensha Corp オゾン発生装置用電源およびオゾン発生装置の放電管切り離し装置
JP2005151779A (ja) * 2003-11-19 2005-06-09 Kansai Electric Power Co Inc:The 高周波電源装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9147555B2 (en) 2010-07-20 2015-09-29 Trumpf Huettinger Gmbh + Co. Kg Arc extinction arrangement and method for extinguishing arcs
CN111788331A (zh) * 2017-12-15 2020-10-16 先进工程解决方案全球控股私人有限公司 速率增强脉冲dc溅射系统

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