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WO2009039824A3 - Optoelektronisches bauelement und auskoppellinse für ein optoelektronisches bauelement - Google Patents

Optoelektronisches bauelement und auskoppellinse für ein optoelektronisches bauelement Download PDF

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Publication number
WO2009039824A3
WO2009039824A3 PCT/DE2008/001511 DE2008001511W WO2009039824A3 WO 2009039824 A3 WO2009039824 A3 WO 2009039824A3 DE 2008001511 W DE2008001511 W DE 2008001511W WO 2009039824 A3 WO2009039824 A3 WO 2009039824A3
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic component
semiconductor body
wavelength range
wavelength
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2008/001511
Other languages
English (en)
French (fr)
Other versions
WO2009039824A2 (de
Inventor
Ralph Wirth
Bernd Barchmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2009039824A2 publication Critical patent/WO2009039824A2/de
Publication of WO2009039824A3 publication Critical patent/WO2009039824A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8583Means for heat extraction or cooling not being in contact with the bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841Reflective coatings, e.g. dielectric Bragg reflectors

Landscapes

  • Led Device Packages (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Es wird ein optoelektronisches Bauelement mit den folgenden Merkmalen offenbart: - zumindest einem Halbleiterkörper (1), der dazu vorgesehen ist, elektromagnetische Strahlung eines ersten Wellenlängenbereichs zu emittieren, - einer Wärmesenke (2), auf der der Halbleiterkörper (1) und ein Spiegel (3) angeordnet sind, und - einer wellenlängenkonvertierenden Schicht (4), die seitlich des Halbleiterkörpers (1) auf dem Spiegel (3) angeordnet ist und einen Wellenlängenkonversionsstoff (8) umfasst, der dazu geeignet ist, zumindest einen Teil der von dem Halbleiterkörper (1) emittierten Strahlung des ersten Wellenlängenbereichs in Strahlung eines vom ersten Wellenbereich verschiedenen zweiten Wellenlängenbereichs umzuwandeln. Weiterhin wird eine Auskoppellinse (14) für ein optoelektronisches Bauelement beschrieben.
PCT/DE2008/001511 2007-09-28 2008-09-05 Optoelektronisches bauelement und auskoppellinse für ein optoelektronisches bauelement Ceased WO2009039824A2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007046698 2007-09-28
DE102007046698.8 2007-09-28
DE102007059548.6 2007-12-11
DE102007059548A DE102007059548A1 (de) 2007-09-28 2007-12-11 Optoelektronisches Bauelement und Auskoppellinse für ein optoelektronisches Bauelement

Publications (2)

Publication Number Publication Date
WO2009039824A2 WO2009039824A2 (de) 2009-04-02
WO2009039824A3 true WO2009039824A3 (de) 2009-10-15

Family

ID=40384477

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/001511 Ceased WO2009039824A2 (de) 2007-09-28 2008-09-05 Optoelektronisches bauelement und auskoppellinse für ein optoelektronisches bauelement

Country Status (3)

Country Link
DE (1) DE102007059548A1 (de)
TW (1) TW200921952A (de)
WO (1) WO2009039824A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5343831B2 (ja) * 2009-04-16 2013-11-13 日亜化学工業株式会社 発光装置
CN103283048B (zh) 2010-12-29 2017-04-12 3M创新有限公司 远程荧光粉led的构造
US9159885B2 (en) 2010-12-29 2015-10-13 3M Innovative Properties Company Remote phosphor LED device with broadband output and controllable color
CN103283047B (zh) * 2010-12-29 2017-06-16 3M创新有限公司 用于远程荧光粉led装置的荧光粉反射器组件
DE102011003969B4 (de) 2011-02-11 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
BR112014008846A2 (pt) * 2011-10-14 2017-04-25 3M Innovative Properties Co conjunto de lente para dispositivo de led de fósforo remoto, e método de fabricação de um dispositivo de led de fósforo remoto
DE102011116752B4 (de) * 2011-10-24 2025-07-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Streumittel
US10077886B2 (en) 2012-06-01 2018-09-18 3M Innovative Properties Company Hybrid light bulbs using combinations of remote phosphor LEDS and direct emitting LEDS
DE202013101400U1 (de) * 2013-04-02 2014-07-03 Zumtobel Lighting Gmbh Anordnung zum Konvertieren des von einer LED-Lichtquelle emittierten Lichts
DE102014100991A1 (de) 2014-01-28 2015-07-30 Osram Opto Semiconductors Gmbh Lichtemittierende Anordnung und Verfahren zur Herstellung einer lichtemittierenden Anordnung
US10741735B2 (en) * 2014-06-02 2020-08-11 3M Innovative Properties Company LED with remote phosphor and shell reflector

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000347601A (ja) * 1999-06-02 2000-12-15 Toshiba Electronic Engineering Corp 発光装置
JP2001076511A (ja) * 1999-09-01 2001-03-23 Stanley Electric Co Ltd 車両用灯具
DE10038213A1 (de) * 2000-08-04 2002-03-07 Osram Opto Semiconductors Gmbh Strahlungsquelle und Verfahren zur Herstellung einer Linsensform
EP1187228A1 (de) * 2000-02-09 2002-03-13 Nippon Leiz Corporation Lichtquelle
DE10065381A1 (de) * 2000-12-27 2002-07-11 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
US20030107316A1 (en) * 2001-12-07 2003-06-12 Gen Murakami Light-emitting unit and method for producing same as well as lead frame used for producing light-emitting unit
EP1381091A2 (de) * 2002-07-12 2004-01-14 Stanley Electric Co., Ltd. Led
US20040164310A1 (en) * 2002-09-18 2004-08-26 Toyoda Gosei Co., Ltd. Light-emitting device
US20050067681A1 (en) * 2003-09-26 2005-03-31 Tessera, Inc. Package having integral lens and wafer-scale fabrication method therefor
EP1653254A2 (de) * 2004-10-18 2006-05-03 Samsung Electronics Co., Ltd. Lichtemittierende Diode und Linse dafür
US20060203468A1 (en) * 2004-03-30 2006-09-14 Goldeneye, Inc. Light recycling illumination systems with wavelength conversion
US20060291246A1 (en) * 2005-06-22 2006-12-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device
WO2007052777A1 (en) * 2005-11-04 2007-05-10 Matsushita Electric Industrial Co., Ltd. Light-emitting module, and display unit and lighting unit using the same
WO2008086682A1 (en) * 2007-01-15 2008-07-24 Hong Kong Applied Science And Technology_Research Institute Co. Ltd. Light-emitting device and lens therefor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2581778Y2 (ja) * 1993-12-21 1998-09-24 株式会社小糸製作所 車輌用標識灯
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
WO1998031055A1 (en) 1997-01-09 1998-07-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5831277A (en) 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
DE10101554A1 (de) 2001-01-15 2002-08-01 Osram Opto Semiconductors Gmbh Lumineszenzdiode
US6791116B2 (en) * 2002-04-30 2004-09-14 Toyoda Gosei Co., Ltd. Light emitting diode
KR100622209B1 (ko) * 2002-08-30 2006-09-19 젤코어 엘엘씨 개선된 효율을 갖는 코팅된 발광다이오드
JP4040955B2 (ja) * 2002-11-06 2008-01-30 株式会社小糸製作所 車両用前照灯及びその製造方法
DE102004047640A1 (de) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
WO2006109113A2 (en) * 2005-04-12 2006-10-19 Acol Technologies Sa Primary optic for a light emitting diode
US7382091B2 (en) * 2005-07-27 2008-06-03 Lung-Chien Chen White light emitting diode using phosphor excitation
JP4993434B2 (ja) * 2005-11-18 2012-08-08 スタンレー電気株式会社 白色led照明装置

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000347601A (ja) * 1999-06-02 2000-12-15 Toshiba Electronic Engineering Corp 発光装置
JP2001076511A (ja) * 1999-09-01 2001-03-23 Stanley Electric Co Ltd 車両用灯具
EP1187228A1 (de) * 2000-02-09 2002-03-13 Nippon Leiz Corporation Lichtquelle
DE10038213A1 (de) * 2000-08-04 2002-03-07 Osram Opto Semiconductors Gmbh Strahlungsquelle und Verfahren zur Herstellung einer Linsensform
DE10065381A1 (de) * 2000-12-27 2002-07-11 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
US20030107316A1 (en) * 2001-12-07 2003-06-12 Gen Murakami Light-emitting unit and method for producing same as well as lead frame used for producing light-emitting unit
EP1381091A2 (de) * 2002-07-12 2004-01-14 Stanley Electric Co., Ltd. Led
US20040164310A1 (en) * 2002-09-18 2004-08-26 Toyoda Gosei Co., Ltd. Light-emitting device
US20050067681A1 (en) * 2003-09-26 2005-03-31 Tessera, Inc. Package having integral lens and wafer-scale fabrication method therefor
US20060203468A1 (en) * 2004-03-30 2006-09-14 Goldeneye, Inc. Light recycling illumination systems with wavelength conversion
EP1653254A2 (de) * 2004-10-18 2006-05-03 Samsung Electronics Co., Ltd. Lichtemittierende Diode und Linse dafür
US20060291246A1 (en) * 2005-06-22 2006-12-28 Kabushiki Kaisha Toshiba Semiconductor light emitting device
WO2007052777A1 (en) * 2005-11-04 2007-05-10 Matsushita Electric Industrial Co., Ltd. Light-emitting module, and display unit and lighting unit using the same
WO2008086682A1 (en) * 2007-01-15 2008-07-24 Hong Kong Applied Science And Technology_Research Institute Co. Ltd. Light-emitting device and lens therefor

Also Published As

Publication number Publication date
DE102007059548A1 (de) 2009-04-02
WO2009039824A2 (de) 2009-04-02
TW200921952A (en) 2009-05-16

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