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WO2009038193A1 - 炭素材料及びその製造方法 - Google Patents

炭素材料及びその製造方法 Download PDF

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Publication number
WO2009038193A1
WO2009038193A1 PCT/JP2008/067022 JP2008067022W WO2009038193A1 WO 2009038193 A1 WO2009038193 A1 WO 2009038193A1 JP 2008067022 W JP2008067022 W JP 2008067022W WO 2009038193 A1 WO2009038193 A1 WO 2009038193A1
Authority
WO
WIPO (PCT)
Prior art keywords
carbon material
buffer layer
base
producing
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067022
Other languages
English (en)
French (fr)
Inventor
Takanori Kawano
Rie Tao
Yoshio Shodai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Tanso Co Ltd
Original Assignee
Toyo Tanso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Tanso Co Ltd filed Critical Toyo Tanso Co Ltd
Priority to JP2009533207A priority Critical patent/JPWO2009038193A1/ja
Publication of WO2009038193A1 publication Critical patent/WO2009038193A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　炭素材料１０は、炭素質又は黒鉛質の基材１と、その表面に形成されており、ダイヤモンド粒子４の一部分が基材１に埋設されたダイヤモンド粒子４を含有している緩衝層２と、その上に形成された導電性ダイヤモンド層３とを備えている。また、炭素材料の製造方法は、ダイヤモンド粒子４の一部分を炭素質又は黒鉛質からなる基材１表面に埋設してダイヤモンド粒子４を含有した緩衝層２を基材１表面に形成する緩衝層形成工程と、緩衝層２上に導電性ダイヤモンド層３を形成する導電性ダイヤモンド層形成工程とを有している。
PCT/JP2008/067022 2007-09-20 2008-09-19 炭素材料及びその製造方法 Ceased WO2009038193A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009533207A JPWO2009038193A1 (ja) 2007-09-20 2008-09-19 炭素材料及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-244552 2007-09-20
JP2007244552 2007-09-20

Publications (1)

Publication Number Publication Date
WO2009038193A1 true WO2009038193A1 (ja) 2009-03-26

Family

ID=40468002

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067022 Ceased WO2009038193A1 (ja) 2007-09-20 2008-09-19 炭素材料及びその製造方法

Country Status (3)

Country Link
JP (1) JPWO2009038193A1 (ja)
TW (1) TW200925108A (ja)
WO (1) WO2009038193A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012066980A (ja) * 2010-09-27 2012-04-05 Sumitomo Electric Ind Ltd 高硬度導電性ダイヤモンド多結晶体およびその製造方法
JP2012066979A (ja) * 2010-09-27 2012-04-05 Sumitomo Electric Ind Ltd 高硬度導電性ダイヤモンド多結晶体およびその製造方法
WO2014024569A1 (ja) * 2012-08-08 2014-02-13 日産自動車株式会社 接点部材及び電動機
CN115181957A (zh) * 2022-08-25 2022-10-14 北京爱克瑞特金刚石工具有限公司 一种功能性金刚石微纳米粉体及复合体的制备和应用

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251158A (ja) * 1985-04-30 1986-11-08 Sumitomo Electric Ind Ltd 放熱基板
JPS62138395A (ja) * 1985-12-09 1987-06-22 Kyocera Corp ダイヤモンド膜の製造方法
JPH0297486A (ja) * 1988-10-02 1990-04-10 Canon Inc ダイヤモンド膜及びその製造法
JPH0558784A (ja) * 1991-09-02 1993-03-09 Toyota Central Res & Dev Lab Inc ダイヤモンドの析出方法
JP2003147527A (ja) * 2001-11-08 2003-05-21 Kobe Steel Ltd ダイヤモンド被覆非ダイヤモンド炭素部材及びその製造方法
WO2005014886A1 (ja) * 2003-08-07 2005-02-17 Ebara Corporation ダイアモンド電極の成膜方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251158A (ja) * 1985-04-30 1986-11-08 Sumitomo Electric Ind Ltd 放熱基板
JPS62138395A (ja) * 1985-12-09 1987-06-22 Kyocera Corp ダイヤモンド膜の製造方法
JPH0297486A (ja) * 1988-10-02 1990-04-10 Canon Inc ダイヤモンド膜及びその製造法
JPH0558784A (ja) * 1991-09-02 1993-03-09 Toyota Central Res & Dev Lab Inc ダイヤモンドの析出方法
JP2003147527A (ja) * 2001-11-08 2003-05-21 Kobe Steel Ltd ダイヤモンド被覆非ダイヤモンド炭素部材及びその製造方法
WO2005014886A1 (ja) * 2003-08-07 2005-02-17 Ebara Corporation ダイアモンド電極の成膜方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012066980A (ja) * 2010-09-27 2012-04-05 Sumitomo Electric Ind Ltd 高硬度導電性ダイヤモンド多結晶体およびその製造方法
JP2012066979A (ja) * 2010-09-27 2012-04-05 Sumitomo Electric Ind Ltd 高硬度導電性ダイヤモンド多結晶体およびその製造方法
WO2014024569A1 (ja) * 2012-08-08 2014-02-13 日産自動車株式会社 接点部材及び電動機
CN115181957A (zh) * 2022-08-25 2022-10-14 北京爱克瑞特金刚石工具有限公司 一种功能性金刚石微纳米粉体及复合体的制备和应用

Also Published As

Publication number Publication date
JPWO2009038193A1 (ja) 2011-01-13
TW200925108A (en) 2009-06-16

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