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WO2009037910A1 - 磁気ランダムアクセスメモリ、その書き込み方法、及び磁気抵抗効果素子 - Google Patents

磁気ランダムアクセスメモリ、その書き込み方法、及び磁気抵抗効果素子 Download PDF

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Publication number
WO2009037910A1
WO2009037910A1 PCT/JP2008/062296 JP2008062296W WO2009037910A1 WO 2009037910 A1 WO2009037910 A1 WO 2009037910A1 JP 2008062296 W JP2008062296 W JP 2008062296W WO 2009037910 A1 WO2009037910 A1 WO 2009037910A1
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WO
WIPO (PCT)
Prior art keywords
magnetization
fixed
random access
access memory
ferromagnetic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062296
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English (en)
French (fr)
Inventor
Shunsuke Fukami
Tetsuhiro Suzuki
Kiyokazu Nagahara
Norikazu Ohshima
Nobuyuki Ishiwata
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NEC Corp
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NEC Corp
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Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2009533086A priority Critical patent/JP5445133B2/ja
Priority to US12/678,538 priority patent/US8194436B2/en
Publication of WO2009037910A1 publication Critical patent/WO2009037910A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

磁気ランダムアクセスメモリは、第１強磁性層１０と、第１強磁性層１０に隣接して設けられる絶縁層２０と、絶縁層２０に隣接して第１強磁性層１０とは反対側に設けられる第１磁化固定層３０とを具備する。第１強磁性層１０は、磁化自由領域１２と第１磁化固定領域１１ａと第２磁化固定領域１１ｂとを備える。磁化自由領域１２は反転可能な磁化を有し第２強磁性層２０とオーバーラップする。第１磁化固定領域１１ａは第１固定磁化を有し磁化自由領域の一部に接続される。第２磁化固定領域１１ｂは第２固定磁化を有し磁化自由領域１２の一部に接続される。第１強磁性層１０は膜面垂直方向への磁気異方性を有する。第１固定磁化と第２固定磁化は、膜面垂直方向で、互いに反平行に固定される。
PCT/JP2008/062296 2007-09-19 2008-07-07 磁気ランダムアクセスメモリ、その書き込み方法、及び磁気抵抗効果素子 Ceased WO2009037910A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009533086A JP5445133B2 (ja) 2007-09-19 2008-07-07 磁気ランダムアクセスメモリ、その書き込み方法、及び磁気抵抗効果素子
US12/678,538 US8194436B2 (en) 2007-09-19 2008-07-07 Magnetic random access memory, write method therefor, and magnetoresistance effect element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-242203 2007-09-19
JP2007242203 2007-09-19

Publications (1)

Publication Number Publication Date
WO2009037910A1 true WO2009037910A1 (ja) 2009-03-26

Family

ID=40467734

Family Applications (1)

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PCT/JP2008/062296 Ceased WO2009037910A1 (ja) 2007-09-19 2008-07-07 磁気ランダムアクセスメモリ、その書き込み方法、及び磁気抵抗効果素子

Country Status (3)

Country Link
US (1) US8194436B2 (ja)
JP (1) JP5445133B2 (ja)
WO (1) WO2009037910A1 (ja)

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JP2015060609A (ja) * 2013-09-18 2015-03-30 株式会社東芝 磁気記憶装置及びその駆動方法
US9293183B2 (en) 2011-08-11 2016-03-22 Renesas Electronics Corporation Magnetoresistive random access memory

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US20140003118A1 (en) * 2012-07-02 2014-01-02 International Business Machines Corporation Magnetic tunnel junction self-alignment in magnetic domain wall shift register memory devices
JP2014143315A (ja) * 2013-01-24 2014-08-07 Toshiba Corp 磁気メモリおよびその製造方法
US10854809B2 (en) 2017-12-29 2020-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. STT-MRAM heat sink and magnetic shield structure design for more robust read/write performance
WO2020174569A1 (ja) * 2019-02-26 2020-09-03 Tdk株式会社 磁気記録アレイ、積和演算器及びニューロモーフィックデバイス

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Also Published As

Publication number Publication date
US20100214826A1 (en) 2010-08-26
JP5445133B2 (ja) 2014-03-19
JPWO2009037910A1 (ja) 2011-01-06
US8194436B2 (en) 2012-06-05

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