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WO2009037032A1 - Procédé de réalisation de nanostructures et/ou de microstructures par lithographie, matrice et substrat - Google Patents

Procédé de réalisation de nanostructures et/ou de microstructures par lithographie, matrice et substrat Download PDF

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Publication number
WO2009037032A1
WO2009037032A1 PCT/EP2008/059581 EP2008059581W WO2009037032A1 WO 2009037032 A1 WO2009037032 A1 WO 2009037032A1 EP 2008059581 W EP2008059581 W EP 2008059581W WO 2009037032 A1 WO2009037032 A1 WO 2009037032A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
substance
microstructure
nano
stamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/059581
Other languages
German (de)
English (en)
Inventor
Tjalf Pirk
Johanna May
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of WO2009037032A1 publication Critical patent/WO2009037032A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means

Definitions

  • the invention relates to a method for the lithographic production of nano- and / or microstructures on a substrate having a three-dimensional macro-surface according to the preamble of claim 1, a stamp for carrying out the method according to the preamble of claim 11 and a substrate 12 produced by the method.
  • Photolithography is a common method of semiconductor technology, in which a photoresist (so-called photoresist) is first applied to a substrate having a two-dimensional, i.e., a photoresist. plane, in particular a wafer is applied, wherein the photoresist is then chemically changed by means of a UV exposure through a mask at the exposed locations. Thereafter, the exposed substrate is dipped in a developing solution which peels off either the exposed photoresist regions (positive resist) or the unexposed photoresist regions (negative resist). The structured photoresist remains on the substrate, the maximum depth of the introduced structures depending on the height of the previously applied photoresist. Two-stage processes are feasible, but these processes are relatively expensive, since the lower photoresist layer must be insensitive to the exposure of the upper photoresist layer in order to prevent both layers from being patterned simultaneously.
  • NIL nanoimprint lithography
  • the invention is therefore based on the object of proposing a method with which a nano- and / or microstructured substrate having a three-dimensional macro-surface can be obtained. Furthermore, the object is to propose a suitable stamp for such a method and a substrate produced by such a method.
  • the invention is based on the idea of using nanostructures and / or microstructures on or in a substrate having a three-dimensional macro-surface adapted to the macro-surface of the substrate stamp, so a stamp, which also has a three-dimensional macro Surface which, at least in sections, is formed as a negative image of the three-dimensional macro-surface of the substrate, that is to say is congruent to the macro-surface of the substrate.
  • a stamp which also has a three-dimensional macro Surface which, at least in sections, is formed as a negative image of the three-dimensional macro-surface of the substrate, that is to say is congruent to the macro-surface of the substrate.
  • macro-surface are understood in a broadest sense, all surfaces that of at least approximately deviate exactly planar, ie two-dimensional, macro-surface structure, as used in previous lithographic processes, in particular as a ground Waf surface, is used.
  • a macro-surface is understood to mean a (macro-) structured surface in the millimeter and / or centimeter range.
  • a macro-surface is understood to mean a surface which has at least one step section of at least 10 ⁇ m in height.
  • the macrostructure has height differences that would cause focus loss in classical 2D lithography.
  • the substrate In order to be able to introduce nano- and / or microstructures into the substrate by means of the stamp, whose three-dimensional macro-surface is at least partially shaped congruent to the three-dimensional macro-surface of the substrate, the substrate must first, at least in the area in which the nano - And / or microstructures are to be introduced, coated with a substance to be structured.
  • the layer thickness of the substance is preferably thinner than the depth extent of the macro-surface of the substrate.
  • the application of the substance to be structured can be carried out, for example, by spraying the substrate with the substance or immersing the substrate in the substance.
  • the height of the applied substance layer determines the maximum depth of the nano and / or macrostructure to be introduced.
  • the substrate and the stamp are positioned relative to each other such that the negative three-dimensional macro-surface of the stamp is exactly aligned with the positive three-dimensional macro-surface of the substrate and the stamp and the substrate with respect to their macro-surface according to the key lock principle match.
  • a negative nano- and / or microstructure is provided on the three-dimensional macro-surface of the stamp. This can be produced for example by erosion, micro milling or casting, for example in PDMS.
  • the embossing of the nano and / or microstructure in the substance takes place by generating a relative movement between the punch and the substrate towards each other. This stamp movement is preferably carried out path-controlled.
  • the substance adapts to the negative nano- and / or microstructure of the stamp, so that a positive image of this negative nano- and / or microstructure in the substance as a nano- and / or microstructure is produced.
  • the method designed according to the concept of the invention is suitable, for example, for structuring three-dimensional circuit boards or for producing three-dimensional photomasks, in particular for photolithographic methods.
  • thermoplastic substance is used as the substance to be structured, to be applied to the substrate, that is to say a substance which can be plastically deformed by pressure and heat.
  • the substance is preferably a photoresist, more preferably PMMA.
  • thermosets or UV-polymerizable substances with the stamp being preferably made transparent to UV light in the case of UV-polymerizable substances.
  • the substance, in particular together with the substrate, heated before and / or during embossing is, preferably to a temperature at which a plastic deformation of the substance is possible.
  • this temperature is a glass transition temperature of the substance or an overlying temperature.
  • the substance, in particular together with the substrate is preferably cooled again, in particular to a temperature at which the substance is no longer plastically deformable.
  • the embossed nano- and / or microstructure is quasi "frozen.”
  • the cooling is still carried out while the stamp is pressed onto the substrate or into the substance, in order to avoid bleeding of the substance and thus destruction of the structures just introduced.
  • stamp is brought into contact with the substance before heating, preferably in such a way that no embossing takes place.
  • Embossing relative movement
  • the heating of the substance takes place, in particular together with the substrate, and / or the positioning of the stamp relative to the substrate and / or embossing in a vacuum atmosphere.
  • the stamp thus has a negative nano and / or microstructure, the different depth or Has height sections and / or different width sections.
  • the height of the substance in trenches of the nano- and / or microstructure can be reduced to fractions of the original layer thickness.
  • a further structuring of the substance takes place.
  • This structuring can be done, for example, additively, in particular by deposition, in particular vapor deposition, metallization or subtractive, in particular by etching trenches.
  • microfluidic structures can be introduced in a simple manner into the substrate prestructured by the embossing process or in the prestructured substance by etching trenches.
  • the method described can also be applied to substrates whose macro-surface is also formed three-dimensionally on the side opposite the patterning side by the substrate does not rest on a two-dimensional, planar support, but by a three-dimensional, preferably formed congruent to the contact surface of the substrate holder provided is.
  • the invention also leads to a stamp for carrying out the method described above.
  • the stamp is characterized by a three-dimensional macro surface provided with a negative nano and / or microstructure.
  • the stamp can be at least partially, in particular the structured region, formed of PDMS, in which case the negative nano and / or microstructure, for example, by casting the PDMS by means of a casting mold can be introduced. Additionally or alternatively, the negative nano and / or microstructures can be introduced by erosion or micro-milling.
  • the invention also leads to a substrate which has been provided with a nano and / or microstructure by means of the method described above.
  • the substrate may be a polymer which can serve as a mask for printed conductors by the structuring carried out according to the concept of the invention.
  • Fig. 2 the substrate of FIG. 1 with an applied, to be structured
  • FIG. 3 shows a stamp positioned relative to the substrate with a macro-surface which conforms to the macro-surface of the substrate and with a nano- and / or microstructure provided in the macro-surface during the embossing process and
  • FIG. 3 shows a stamp positioned relative to the substrate with a macro-surface which conforms to the macro-surface of the substrate and with a nano- and / or microstructure provided in the macro-surface during the embossing process
  • Fig. 4 a finished structured substrate.
  • a substrate 1 in this case a polymer, is shown.
  • the substrate 1 has a three-dimensional macro-surface 2 with a multiplicity of planes 3 a to 3 f, which are in different height positions, wherein the macroscopic Height difference between the individual levels 3a to 3f in the range of about 10 microns to about 500 microns. There are also height differences in the millimeter and / or centimeter range feasible.
  • a substance 4 to be structured in this case thermoplastic PMMA, is sprayed onto this three-dimensional macro-surface 2 under vacuum in a first method step.
  • the substance 4 can be applied by immersion.
  • the thickness extension of the substance 4 is (substantially) less than the height differences between the planes 3a to 3f (see FIG. 2).
  • a stamp 5 in this case made of PDMS, is positioned relative to the substrate 4 by adjusting the stamp 5 and / or the substrate 4 and brought into contact with the substrate 4 (not shown).
  • the stamp 5 has a three-dimensional macro-surface with planes 7a to 7f which can be seen from FIG. 3, wherein each plane 3a to 3f of the substrate 1 is assigned a plane 7a to 7f of the stamp.
  • the three-dimensional macro-surface 6 of the stamp 5 has a form-matching to the three-dimensional macro-surface 2 of the substrate 1 molding.
  • the substance 4 After contacting the stamp 5 with the substrate 1, the substance 4 is heated, in particular by placing the stamp 5 and the substrate 4 in a heating chamber, at a temperature above the glass transition temperature of the substance 4, ie at a temperature at which the substance 4 is plastically deformable. After reaching this temperature, punch 5 and substrate 1 are moved away from each other toward each other. In this case, the substance 4 is embossed with a negative nano and / or microstructure 8 provided on the three-dimensional macro-surface 6 of the stamp 5 (cf., Fig. 3), whereby a nanosensitive to the negative nano- and / or microstructure 8 is formed - And / or microstructure 9 is generated in the substance 4.
  • the cooling of the substance 4 takes place together with the stamp 5 and the substrate 1 to a temperature below the glass transition temperature of the substance 4, whereby the substance 4 hardens in the embossed form.
  • this is provided with a non-stick coating or consists of a non-adhesive material.
  • stamp 5 and substrate 1 are moved away from each other. Any residual substance remaining in the region of the depressions of the resulting nano- and / or microstructure 9 is removed by means of a short etching process. With the aid of plasma, the nano and / or microstructure 9 shown in FIG.
  • the nano- and / or microstructure 9 are arranged on levels of different levels three-dimensional macro-surface 2 of the substrate 1 extends.
  • the three-dimensional macro surface 2 of the substrate 1 was thus nano- and / or microstructured. If necessary, metallization and / or etching of trenches on the substance 4 or in the substance 4 and / or on the substrate 1 and / or in the substrate 1 can take place in a following step.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Micromachines (AREA)

Abstract

L'invention concerne un procédé permettant de réaliser par lithographie des nanostructures et/ou des microstructures (9) sur un substrat (1) présentant une macrosurface tridimensionnelle. Ce procédé est caractérisé par les étapes suivantes : application d'une substance (4) à structurer sur le substrat (1) et positionnement du substrat (1) relativement à une matrice (5) présentant une forme au moins localement complémentaire à celle de la macrosurface (2) du substrat (1), et pourvue d'une nanostructure et/ou d'une microstructure (8) en négatif, et estampage de la substance (4) avec la nanostructure et/ou microstructure (8) en négatif de manière à créer la structure et/ou la microstructure (9) dans la substance (4). L'invention concerne en outre une matrice (4) ainsi qu'un substrat (1).
PCT/EP2008/059581 2007-09-18 2008-07-22 Procédé de réalisation de nanostructures et/ou de microstructures par lithographie, matrice et substrat Ceased WO2009037032A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007044505.0 2007-09-18
DE200710044505 DE102007044505A1 (de) 2007-09-18 2007-09-18 Verfahren zum lithographischen Erzeugen von Nano- und/oder Mikrostrukturen, Stempel sowie Substrat

Publications (1)

Publication Number Publication Date
WO2009037032A1 true WO2009037032A1 (fr) 2009-03-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/059581 Ceased WO2009037032A1 (fr) 2007-09-18 2008-07-22 Procédé de réalisation de nanostructures et/ou de microstructures par lithographie, matrice et substrat

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DE (1) DE102007044505A1 (fr)
WO (1) WO2009037032A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001020402A1 (fr) * 1999-09-14 2001-03-22 Massachusetts Institute Of Technology Fabrication de dispositif a motifs fins par etampage par liquides
WO2003096123A1 (fr) * 2002-05-08 2003-11-20 Agency For Science, Technology And Research Technique d'impression par inversion
EP1376663A2 (fr) * 2002-06-28 2004-01-02 Hewlett-Packard Development Company, L.P. Procédé et appareil pour la fabrication d'un composant semi-conducteur
WO2007046772A1 (fr) * 2005-10-20 2007-04-26 Agency For Science, Technology & Research Nanomotifs hierarchiques par lithographie par nano-impression
WO2008060266A2 (fr) * 2005-10-03 2008-05-22 Massachusetts Institute Of Technology Lithographie par impression arbitraire de nanogabarit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001020402A1 (fr) * 1999-09-14 2001-03-22 Massachusetts Institute Of Technology Fabrication de dispositif a motifs fins par etampage par liquides
WO2003096123A1 (fr) * 2002-05-08 2003-11-20 Agency For Science, Technology And Research Technique d'impression par inversion
EP1376663A2 (fr) * 2002-06-28 2004-01-02 Hewlett-Packard Development Company, L.P. Procédé et appareil pour la fabrication d'un composant semi-conducteur
WO2008060266A2 (fr) * 2005-10-03 2008-05-22 Massachusetts Institute Of Technology Lithographie par impression arbitraire de nanogabarit
WO2007046772A1 (fr) * 2005-10-20 2007-04-26 Agency For Science, Technology & Research Nanomotifs hierarchiques par lithographie par nano-impression

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ALKAISI M M ET AL: "Multilevel nanoimprint lithography", CURRENT APPLIED PHYSICS, NORTH-HOLLAND, vol. 4, no. 2-4, 1 April 2004 (2004-04-01), pages 111 - 114, XP003012089, ISSN: 1567-1739 *

Also Published As

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