[go: up one dir, main page]

WO2009035044A1 - 感光性組成物及びそれを用いたパターン形成方法 - Google Patents

感光性組成物及びそれを用いたパターン形成方法 Download PDF

Info

Publication number
WO2009035044A1
WO2009035044A1 PCT/JP2008/066443 JP2008066443W WO2009035044A1 WO 2009035044 A1 WO2009035044 A1 WO 2009035044A1 JP 2008066443 W JP2008066443 W JP 2008066443W WO 2009035044 A1 WO2009035044 A1 WO 2009035044A1
Authority
WO
WIPO (PCT)
Prior art keywords
photosensitive composition
pattern formation
acid
composition
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/066443
Other languages
English (en)
French (fr)
Inventor
Sou Kamimura
Shuji Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of WO2009035044A1 publication Critical patent/WO2009035044A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/04—Polymerisation in solution
    • C08F2/06—Organic solvent

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Emergency Medicine (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

　ＩＣ等の半導体製造工程、液晶、サーマルヘッド等の回路基板の製造、さらにその他のフォトファブリケーション工程などに使用される、感度、解像度、ラインエッジラフネス及びパターン倒れの４点で改良された感光性組成物及びそれを用いたパターン形成方法として、（Ａ）２種の特定のアセタール構造を有する繰り返し単位を有し、酸の作用により分解してアルカリ現像液に対する溶解性が増大するポリマー及び（Ｂ）活性光線又は放射線の照射により酸を発生する化合物を含有することを特徴とする感光性組成物及びそれを用いたパターン形成方法を提供する。
PCT/JP2008/066443 2007-09-14 2008-09-11 感光性組成物及びそれを用いたパターン形成方法 Ceased WO2009035044A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007239571A JP2009069630A (ja) 2007-09-14 2007-09-14 感光性組成物及びそれを用いたパターン形成方法
JP2007-239571 2007-09-14

Publications (1)

Publication Number Publication Date
WO2009035044A1 true WO2009035044A1 (ja) 2009-03-19

Family

ID=40452051

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066443 Ceased WO2009035044A1 (ja) 2007-09-14 2008-09-11 感光性組成物及びそれを用いたパターン形成方法

Country Status (2)

Country Link
JP (1) JP2009069630A (ja)
WO (1) WO2009035044A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2449429A4 (en) * 2009-07-03 2012-12-26 Fujifilm Corp AGAINST ACTIVE RADIATION SENSITIVE OR BZW. RADIATION-SENSITIVE RESIN COMPOSITION AND STRUCTURE-FORMING PROCESS THEREFOR
WO2013133396A1 (en) * 2012-03-05 2013-09-12 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition
TWI465845B (zh) * 2011-06-14 2014-12-21 Fujifilm Corp 感光化射線性或感放射線性樹脂組成物、來自該組成物的感光化射線性或感放射線性膜以及圖案形成方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7219260B2 (ja) * 2018-03-19 2023-02-07 株式会社ダイセル フォトレジスト用樹脂、フォトレジスト用樹脂の製造方法、フォトレジスト用樹脂組成物、及びパターン形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000194127A (ja) * 1998-10-19 2000-07-14 Shin Etsu Chem Co Ltd レジスト材料及びパタ―ン形成方法
JP2001337457A (ja) * 2000-03-22 2001-12-07 Shin Etsu Chem Co Ltd 化学増幅ポジ型レジスト材料及びパターン形成方法
JP2005099558A (ja) * 2003-09-26 2005-04-14 Fuji Photo Film Co Ltd ポジ型電子線、ｘ線又はｅｕｖ光用レジスト組成物及びそれを用いたパターン形成方法
JP2006091663A (ja) * 2004-09-27 2006-04-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2006251550A (ja) * 2005-03-11 2006-09-21 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000194127A (ja) * 1998-10-19 2000-07-14 Shin Etsu Chem Co Ltd レジスト材料及びパタ―ン形成方法
JP2001337457A (ja) * 2000-03-22 2001-12-07 Shin Etsu Chem Co Ltd 化学増幅ポジ型レジスト材料及びパターン形成方法
JP2005099558A (ja) * 2003-09-26 2005-04-14 Fuji Photo Film Co Ltd ポジ型電子線、ｘ線又はｅｕｖ光用レジスト組成物及びそれを用いたパターン形成方法
JP2006091663A (ja) * 2004-09-27 2006-04-06 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2006251550A (ja) * 2005-03-11 2006-09-21 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2449429A4 (en) * 2009-07-03 2012-12-26 Fujifilm Corp AGAINST ACTIVE RADIATION SENSITIVE OR BZW. RADIATION-SENSITIVE RESIN COMPOSITION AND STRUCTURE-FORMING PROCESS THEREFOR
US8877423B2 (en) 2009-07-03 2014-11-04 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
TWI465845B (zh) * 2011-06-14 2014-12-21 Fujifilm Corp 感光化射線性或感放射線性樹脂組成物、來自該組成物的感光化射線性或感放射線性膜以及圖案形成方法
WO2013133396A1 (en) * 2012-03-05 2013-09-12 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition

Also Published As

Publication number Publication date
JP2009069630A (ja) 2009-04-02

Similar Documents

Publication Publication Date Title
EP2372457A4 (en) POSITIVE LIGHT-SENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING A RESISTANCE STRUCTURE, SEMICONDUCTOR ELEMENT AND ELECTRONIC COMPONENT
TW200715058A (en) Positive resist composition and pattern-forming method using the same
WO2010067905A3 (en) Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
TW201129576A (en) Radiation-sensitive resin composition, polymer, monomer and method for producing radiation-sensitive resin composition
TW200613915A (en) Positively radiation-sensitive resin composition
TW200942998A (en) Resist processing method
WO2010061977A3 (en) Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method
WO2009035044A1 (ja) 感光性組成物及びそれを用いたパターン形成方法
SG158792A1 (en) Chemically-amplified positive resist composition and patterning process thereof
EP2221666A4 (en) LIGHT-SENSITIVE RESIN COMPOSITION OF THE POSITIVE TYPE, METHOD FOR PRODUCING A RESISTANCE STRUCTURE, SEMICONDUCTOR ARRANGEMENT AND ELECTRONIC ARRANGEMENT
EP1684116A3 (en) Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition
WO2009022561A1 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
SE9904186D0 (sv) Dds
EP1975716A3 (en) Positive resist composition and pattern forming method
TW200643631A (en) Positive resist composition and pattern forming method using the same
EP1739483A3 (en) Positive photosensitive composition and pattern forming method using the same
TW201239536A (en) Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device
WO2013042973A3 (ko) Ｉ-선 포토레지스트 조성물 및 이를 이용한 미세패턴 형성 방법
WO2008081679A1 (ja) 感光性平版印刷版用現像液及びそれを用いた平版印刷版の作製方法
EP1519228A3 (en) Positive resist composition and pattern formation method using the same
WO2009041357A1 (ja) 感光性組成物及びそれを用いたパターン形成方法
TW200627071A (en) Resist composition for immersion exposure and method for forming resist pattern
DE602007002733D1 (de) Positive Resistzusammensetzung und Verfahren zur Strukturformung damit
TW200712777A (en) Positive photosensitive resin composition, uses thereof, and method for forming positive pattern
ATE386073T1 (de) Positiv arbeitende resistzusammensetzung und verfahren zur herstellung von mustern unter verwendung dieser zusammensetzung.

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08831032

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08831032

Country of ref document: EP

Kind code of ref document: A1