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WO2009032549A1 - Tampon à polir et procédé d'utilisation associé - Google Patents

Tampon à polir et procédé d'utilisation associé Download PDF

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Publication number
WO2009032549A1
WO2009032549A1 PCT/US2008/073904 US2008073904W WO2009032549A1 WO 2009032549 A1 WO2009032549 A1 WO 2009032549A1 US 2008073904 W US2008073904 W US 2008073904W WO 2009032549 A1 WO2009032549 A1 WO 2009032549A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
pad
wafer
polishing pad
psi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2008/073904
Other languages
English (en)
Inventor
Rajeev Bajaj
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiquest Inc
Original Assignee
Semiquest Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiquest Inc filed Critical Semiquest Inc
Priority to CN200880107121A priority Critical patent/CN101801601A/zh
Publication of WO2009032549A1 publication Critical patent/WO2009032549A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Definitions

  • the present invention relates to the field of chemical mechanical plananzation (CMP) and, more specifically, to a CMP pad for reduced defectivity
  • CMP chemical mechanical plananzation
  • abrasive process used to remove these layers and polish the surface of a wafer CMP may be performed on both oxides and metals and generally involves the use of chemical slurries applied in conjunction with a polishing pad that is m motion relative to the wafer (e g , the pad is often m rotational motion relative to the wafer)
  • the resulting smooth, flat surface is necessary to maintain the photolithographic depth of focus, for subsequent wafer processing steps and to ensure that the metal interconnects are not deformed over contour steps
  • Damascene processmg requires metal, such as tungsten or copper, to be removed from the top surface of dielectric to define interconnect structures, using CMP
  • Polishing pads are typically made of urethanes, either in cast form filled with micro- porous elements, or from non-woven felt coated with polyurethanes In use, the pad is rotated while contacting the wafer, which is also rotating, thus effecting polishing Typically, two types of polishing pads are used hard polishing pads and soft polishing pads Hard pads are typically used for applications requiring plananzation of micro-scale features on the wafer surface, while soft pads are used for applications where plananzation is not required For example, soft pads may be used in a multi-step polishing process where wafers are first polished with a hard pad to plana ⁇ ze the surface, followed by polishing with a soft pad to create a smooth finish Hard pads typically create surface defects such as micro-scratches and are not efficient at effecting the removal of slurry particles Therefore, a soft pad is used to polish the surface of the wafer to smooth the micro-scratches as well as to enable more efficient removal of particle defects
  • An embodiment of the present invention provides a polishing pad having one or more polishing elements (e g , a single polishing surface or multiple polishing surfaces or elements) made from a hydrogel matenal havmg an intrinsic ability to absorb water
  • the hydrogel material may have no micro-porosity, a water absorption capability of 4% - 60% by weight, a wet tensile strength greater than 1000 psi, a flexural modulus greater than 2000 psi, and a wet Shore D hardness between 25-80, inclusive
  • the hydrogel matenal may have a water absorption capability of 4% - 60% by weight, a microporosity of 1% to 20% by volume, micropores of 20-100 microns, a wet tensile strength greater than 1000 psi, a flexural modulus greater than 2000 psi, and a wet Shore D hardness between 25-80.
  • the hydrogel matenal may be made from one or a combination of the following moeties urethane, alkylene oxides, esters, ethers, acrylic acids, acrylamides, amides, lmides, vinylalcohols, vinylacetates, acrylates, methacrylates, sulfones, urethanes, vinylchlo ⁇ des, etheretherketones, and/or carbonates.
  • polishing may be effected by bringing a polishing pad constructed from a material havmg an intrinsic ability to absorb water m proximity to a semiconductor wafer in the presence of a polishing composition disposed between the polishing pad and a top layer disposed on the wafer, and rotating the wafer and the polishing pad with respect to one another so as to effect removal of some or all of the top layer (e g , copper) disposed on the wafer
  • the polishing pad may be soaked in solution (e g , water, the polishing composition, an electrolytic solution such as copper sulfate, etc ) p ⁇ or to commencing polishing operations In cases where an electrolytic solution is used, the polishing pad may be coupled to an electrical source dunng the polishing operations
  • an anodic current is applied to the polishing pad (or to the polishing surface thereof) while a cathodic bias is provided b> external means, and the semiconductor wafer is pressed agamst the polishing surface
  • cathodic current is applied to the polishing pad or surface while an anodic bias is provided by external means, and the semiconductor wafer is pressed against the polishing surface
  • a polishing pad having a polishing surface constructed from a material having an intrinsic ability to absorb water may be manufactured using one of injection molding, extrusion, reaction injection molding or sintering Surface features may be formed on the polishing surface of the polishing pad during such manufacturing
  • Figure IA illustrates a conventional polishing pad of conventional form which, in accordance with an embodiment of the present mvention, may include a polishing surface constructed from a hydrogel mate ⁇ al having an intrinsic ability to absorb water
  • Figure 1 B illustrates a polishing pad havmg a plurality of polishing elements, one or more of which are constructed from a hydrogel material having an intrinsic ability to absorb water m accordance with a further embodiment of the present mvention
  • Figure 2 illustrates a method of using a polishing pad configured with a polishing surface made of a hydrogel material having an intrinsic ability to absorb water in accordance with the present invention
  • CMP involves removing films from the surface of a wafer by pressing a polishing pad against the wafer and rotating diese elements relative to one another m the presence of a polishing composition (e g , a slurry) During the polishing process, a slurry layer forms between the wafer and the pad, thus forming a h> drod> namic boundary layer Maintaining a uniform fluid layer between the pad and wafer during polishing is important In cases where the boundary layer is minimized or completely eliminated, the pad may directly contact the wafer leading to a two- body interaction causing higher defectivity In contrast, a highly lub ⁇ cated interface will allow more uniform polishing, as well as minimize defectivity This is particularly important in the case of copper CMP, where the film being polished is very soft and can be easily scratched by direct, wafer-pad contact
  • a polishing composition e g , a slurry
  • Conventional polishing pads are made of polymers, typically urethane, havmg structures to provide means for distributing slurry under the wafer during the polishing process. These structures include voids or micro-pores, which are mcluded by adding hollow micro-elements as desc ⁇ bed in U S Patent 5,578,362, or through introduction of bubbles formed during the casting process U S Patent 6,896,593 desc ⁇ bes the use of supercritical CO 2 to form pores during the molding process.
  • U S Patent 5,489,233 describes the use of a solid plastic sheet, with no intrinsic ability to absorb or transport slurry, and a surface texture, or pattern, with flow channels to transport slurry across the wafer and enablmg polishing
  • the surface texture is mechanically produced upon the pad through machining
  • a pad may be conditioned using a fine, diamond-coated disk to create a micro-texture, which creates micro-groove channels to further enhance slurry distribution under a wafer
  • the pad surface also undergoes plastic deformation, which reduces slurry distribution, leading to poor mate ⁇ al removal and removal uniformity Conditioning processes remove the plastic deformation layer and restore polish performance
  • the material itself does not have any intrinsic ability to absorb significant water or polishing solution and externally created structures such as micro-pores, grooves and micro-groove
  • U S Patent 5,763,682 states that many conventional isocyanate-based foams are non- hydrophihc (i e , relatively hydrophobic) Typical urethane-based foams exhibit an aversion to aqueous fluids, which results in such foams being unable to absorb or pick up significant quantities of aqueous fluids Accordmgly, typical poly urethane foams may be deemed inadequate for providing a highly lub ⁇ cated polishing interface [0021 ] As urethanes are made of reactions of isocyanate and a polyol, the hydrophilic aspect of the final polymer chain can be controlled through selection of polyol. U.S.
  • Patents 5,859,166; 5,763,682; 5,424,338; 5,334,691 ; 5,120,816; 5,118,779; and 4.008.189 describe methods to improve hydrophilicity of urethane compositions
  • Hydrophilic polyurethanes can be made by adding ethylene oxide units and alkylene oxide units to the polyol molecule [0022] Total hydroxy 1 content of the polyol is also an important factor in hydrophilicity of the polyurethane. It is known in this particular art that in order to achieve satisfactory hydrophilic properties in the foam, the polyhydric alcohol-alkylene oxide adduct reactant that is used must contain a certain proportion of ethylene oxide in the molecule. See U.S.
  • U.S. Patent 4.008.189 describes compositions that can minimize such deterioration in physical properties by using a mixture of polyols comprised of three oxy alkylated polyether polyol reactants. The first of these is characterized by a trihydroxy alcohol nucleus, polyoxy ethylene chain segments attached through one end thereof to the nucleus, and polyoxypropylene chain segments attached through one end thereof to the polyoxyethylene chain segments.
  • a polyol can be prepared by methods well known in the art wherein a triol initiator is sequentially condensed, in the presence of an alkaline catalyst such as KOH, first with ethylene oxide and then with propylene oxide.
  • compositions would be particularly suitable for polishing applications as they enable a highly lubricated polishing interface Moreover, it is expected a cross-linked polymer network will provide the best properties, though thermoplastic formulations can be used.
  • Tecophilic* Extrusion Molding formulations from Lubrizol Corp are one such class of materials. These materials are tailored to absorb between 20% to 100% by weight of water. The degree of water absorption is linked to a loss of mechanical properties, with the higher the percentage by weight of water absorbed, the greater the loss in mechanical strength.
  • Figure IA illustrates a cross-sectional view of a conventional polishing pad 100, such as the IC 1000 pad provided by Rohm and Haas Polishing pad 100 contains microelements 102 embedded in a polymeric matrix 104, which may be polyurethane The pad surface contains grooves 106 for slurry transport during polish processes
  • polishing pads may include multiple surface modifications to affect slurry distribution across the surface of the pad
  • Figure IB shows a cross-sectional view of a polishing pad 108 made by SemiQuest, Inc and described in U S patent application 11/697,622, filed 6 Ap ⁇ l 2007, assigned to the assignee of the present invention and incorporated herein by reference
  • Pad 108 consists of polishing elements 1 10, which rest on a compressible under-foam 112 disposed beneath a guide plate 114 Polishing action is provided by the polishing elements, which are made of solid polymer material, while slurry distribution is effected by open spaces between the polishing elements The open spaces are filled with open cell foam
  • polishing surfaces 104 and/or 110 of either or both of the pads discussed above may be made using hydrophilic polymer material
  • these polishing surfaces may be formed of a hydrogel material having the ability to absorb water or polishing solution in the range of 4-60 percent by weight
  • the hydrogel mate ⁇ al may be one or a combination of following moieties, urethane, alkylene oxides, esters, ethers, acrylic acids, acrylamides, amides, lmides, vinylalcohols, vinylacetates, acrylates, methacrylates, sulfones, urethanes, vinylchlo ⁇ des, etheretherketones, and/or carbonates
  • An imide is a functional group consisting of two carboxylic acid groups or one dicarboxyhc acid, bound to a primary amine or ammonia, and is generally prepared directly from ammonia or the primary amine, and the either the acid(s) or their acid anhydrides
  • the polishing surfaces of the pad may be made from hydrogel mate ⁇ als that have no micro-porosity, have a wet tensile strength greater than 1000 psi, a flexural modulus greater than 2000 psi, and/or a wet Shore D hardness of between 25-80, inclusive
  • the hydorgel material may have a microporosity of approximately 1% - 20% by volume, micropores of between approximately 20 - 100 microns, a wet tensile strength greater than 1000 psi, flexural modulus greater than 2000 psi, and a wet Shore D hardness of between 25-80, inclusive
  • a polishing pad constructed from hydrogel mate ⁇ al in accordance with the present mvention is brought into contact with a surface of a semiconductor wafer (e g , a wafer having one or more thin films, oxides and/or metal layers disposed thereon) in the presence of a polishing compound, and the two are rotated with respect to one another so as to effect removal of some or all of a top layer disposed over the surface of the wafer substrate
  • Figure 2 illustrates this arrangement
  • a polishing pad 200 is affixed to a turntable 202 and brought in proximity with a wafer 204 that is on a platen 206
  • a slurry or other polishing compound 208 is introduced between the polishing pad and the wafer and the pad and/or the wafer are rotated relative to one another
  • the polishing pad may be soaked in water or polishing solution p ⁇ or to bemg used for polishing operations For example, the pad may be so soaked for a period of time (e.g , at least 10 minutes) to create a stable polishing surface p ⁇ or to processing the wafer
  • a polishing pad constructed in accordance with the present invention may be soaked in electrolyte solution to create a conductive matrix and surface
  • electrolyte solution is copper sulfate
  • Such a pad may be attached to an external electrical source during polishing operations
  • Such connections niav be anodic and anodic or cathodic bias may be applied by external means
  • a polishing pad saturated with electrolyte solution such as copper sulfate
  • a cathodic bias is provided by external means may be pressed against a semiconductor wafer having a top conductive layer (such as copper) deposited thereon so as to fill structures formed into the underlj ing film to affect removal of the conductive layer
  • a polishing pad constructed in accordance with the present mvention and saturated w ith electrolyte solution such as copper sulfate
  • the pad may be pressed against a semiconductor wafer with top conductive layer (such as copper) deposited thereon so as to fill structures formed into the underlying film to affect deposition of the conductive layer
  • Polishing pads constructed from hydrogel matenal in accordance with the present invention may be manufactured using injection molding, extrusion, reaction injection molding or sintering Surface features may be formed on such pads during the manufacturing process Such features may aid in slurry distribution during polishing operations

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un tampon à polir présentant un ou plusieurs éléments de polissage fabriqués dans un matériau hydrogel présentant une capacité intrinsèque d'absorption de l'eau. Le matériau hydrogel peut ou ne peut pas présenter des micropores, mais il présente une capacité d'absorption de l'eau comprise entre 4 et 60% en poids, une résistance à la traction humide supérieure à 1000 psi, un module d'élasticité en flexion supérieur à 2000 psi, et une dureté shore D humide comprise entre 25 et 80 compris. Le matériau hydrogel peut être fabriqué dans une fraction ou dans une combinaison des fractions suivantes: uréthanne, oxydes d'alkylène, esters, éthers, acides acryliques, acrylamides, amides, imides, alcools vinyliques, vinylacétates, acrylates, méthacrylates, sulfones, uréthannes, chlorures vinyliques, étheréthercétones, et/ou carbonates.
PCT/US2008/073904 2007-08-28 2008-08-21 Tampon à polir et procédé d'utilisation associé Ceased WO2009032549A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200880107121A CN101801601A (zh) 2007-08-28 2008-08-21 抛光垫及使用方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/846,304 US20090061744A1 (en) 2007-08-28 2007-08-28 Polishing pad and method of use
US11/846,304 2007-08-28

Publications (1)

Publication Number Publication Date
WO2009032549A1 true WO2009032549A1 (fr) 2009-03-12

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PCT/US2008/073904 Ceased WO2009032549A1 (fr) 2007-08-28 2008-08-21 Tampon à polir et procédé d'utilisation associé

Country Status (5)

Country Link
US (2) US20090061744A1 (fr)
KR (1) KR20100082765A (fr)
CN (1) CN101801601A (fr)
TW (1) TW200927375A (fr)
WO (1) WO2009032549A1 (fr)

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EP2517828A1 (fr) * 2009-12-22 2012-10-31 JSR Corporation Tampon de polissage chimique mécanique et procédé de polissage chimique mécanique qui utilise celui-ci
KR101775464B1 (ko) * 2011-05-31 2017-09-07 삼성전자주식회사 화학 기계적 연마 장치의 리테이너 링
WO2016033277A1 (fr) 2014-08-27 2016-03-03 Nike Innovate C.V. Articles chaussants, vêtement et équipement de sport dotés de propriétés d'absorption de l'eau
GB2532837B (en) 2014-08-27 2017-10-25 Nike Innovate Cv Article of footwear with soil-shedding performance
US10085513B2 (en) 2014-08-27 2018-10-02 Nike, Inc. Article of footwear with soil-shedding performance
US10531705B2 (en) 2016-03-02 2020-01-14 Nike, Inc. Hydrogel tie layer
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GB201622439D0 (en) * 2016-12-30 2017-02-15 3M Innovative Properties Co Abrasive article and method of use
CN107214639B (zh) * 2017-06-20 2019-05-14 同济大学 一种基于凝胶基底的石英玻璃圆柱面抛光盘的制作方法
CN110202492B (zh) * 2018-02-28 2021-05-14 常州市达蒙砂轮制造有限公司 一种带钾硫复合物的砂轮片
CN109894990B (zh) * 2019-03-22 2020-12-18 湖南科技大学 一种具有胀流特性的柔性磨具及其抛光方法

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Also Published As

Publication number Publication date
US20090061744A1 (en) 2009-03-05
KR20100082765A (ko) 2010-07-19
TW200927375A (en) 2009-07-01
US20110244768A1 (en) 2011-10-06
CN101801601A (zh) 2010-08-11

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