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WO2009031495A1 - 蛍光体及びその製造方法、並びにそれを用いた発光装置 - Google Patents

蛍光体及びその製造方法、並びにそれを用いた発光装置 Download PDF

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Publication number
WO2009031495A1
WO2009031495A1 PCT/JP2008/065668 JP2008065668W WO2009031495A1 WO 2009031495 A1 WO2009031495 A1 WO 2009031495A1 JP 2008065668 W JP2008065668 W JP 2008065668W WO 2009031495 A1 WO2009031495 A1 WO 2009031495A1
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WIPO (PCT)
Prior art keywords
same
phosphor
producing
light
emitting device
Prior art date
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Ceased
Application number
PCT/JP2008/065668
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English (en)
French (fr)
Inventor
Kousuke Shioi
Naoto Hirosaki
Hisayuki Miki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Resonac Holdings Corp
Original Assignee
Showa Denko KK
National Institute for Materials Science
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Filing date
Publication date
Application filed by Showa Denko KK, National Institute for Materials Science filed Critical Showa Denko KK
Priority to US12/676,094 priority Critical patent/US8398892B2/en
Priority to CN2008801052608A priority patent/CN101796157B/zh
Priority to EP08829849.2A priority patent/EP2189509B1/en
Publication of WO2009031495A1 publication Critical patent/WO2009031495A1/ja
Anticipated expiration legal-status Critical
Priority to US13/765,602 priority patent/US8608980B2/en
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
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    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
    • C09K11/592—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

　本発明は、一般式Ｍ（０）ａＭ（１）ｂＭ（２）ｘ－（ｖｍ＋ｎ）Ｍ（３）（ｖｍ＋ｎ）－ｙＯｎＮｚ－ｎで示される組成の蛍光材料を有する蛍光体であって、Ｍ（０）はＬｉ、Ｎａ，Ｂｅ，Ｍｇ，Ｃａ，Ｓｒ，Ｂａ，Ｓｃ，Ｙ，Ｌａ，Ｇｄ，Ｌｕから選ばれ、Ｍ（１）はＭｎ，Ｃｅ，Ｐｒ，Ｎｄ，Ｓｍ，Ｅｕ，Ｔｂ，Ｄｙ，Ｈｏ，Ｅｒ，Ｔｍ，Ｙｂから選ばれ、Ｍ（２）はＳｉ，Ｇｅ，Ｓｎ，Ｔｉ，Ｈｆ，Ｚｒから選ばれ、Ｍ（３はＢｅ，Ｂ，Ａｌ，Ｇａ，Ｉｎ，Ｔｌ，Ｚｎから選ばれ、Ｏは酸素であり、Ｎは窒素であり、３３≦ｘ≦５１，８≦ｙ≦１２，３６≦ｚ≦５６、３≦ａ＋ｂ≦７、０．００１≦ｂ≦１．２、ｍｅ＝ａ＋ｂ、０．８・ｍｅ≦ｍ≦１．２・ｍｅ、０≦ｎ≦７、ｖ＝｛ａ・ｖ（０）＋ｂ・ｖ（１）｝／（ａ＋ｂ）のすべてを満たすことを特徴とする蛍光体に関する。さらに、本発明は、該蛍光体の製造方法、及び該蛍光体を用いた発光装置に関する。
PCT/JP2008/065668 2007-09-03 2008-09-01 蛍光体及びその製造方法、並びにそれを用いた発光装置 Ceased WO2009031495A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/676,094 US8398892B2 (en) 2007-09-03 2008-09-01 Phosphor, method for producing the same and light-emitting device using the same
CN2008801052608A CN101796157B (zh) 2007-09-03 2008-09-01 荧光体和其制造方法、以及使用该荧光体的发光装置
EP08829849.2A EP2189509B1 (en) 2007-09-03 2008-09-01 Phosphor, method for producing the same, and light-emitting device using the same
US13/765,602 US8608980B2 (en) 2007-09-03 2013-02-12 Phosphor, method for producing the same and light-emitting device using the same

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007228243 2007-09-03
JP2007-228243 2007-09-03
JP2008-118949 2008-04-30
JP2008118949 2008-04-30
JP2008214366A JP5578597B2 (ja) 2007-09-03 2008-08-22 蛍光体及びその製造方法、並びにそれを用いた発光装置
JP2008-214366 2008-08-22

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/676,094 A-371-Of-International US8398892B2 (en) 2007-09-03 2008-09-01 Phosphor, method for producing the same and light-emitting device using the same
US13/765,602 Division US8608980B2 (en) 2007-09-03 2013-02-12 Phosphor, method for producing the same and light-emitting device using the same

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WO2009031495A1 true WO2009031495A1 (ja) 2009-03-12

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US (2) US8398892B2 (ja)
EP (1) EP2189509B1 (ja)
JP (1) JP5578597B2 (ja)
KR (1) KR101216923B1 (ja)
CN (1) CN101796157B (ja)
TW (1) TWI391472B (ja)
WO (1) WO2009031495A1 (ja)

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CN101781560A (zh) * 2010-03-23 2010-07-21 中国计量学院 一种以硅铝基氮氧化物为基质的荧光粉及其制备方法
WO2011016486A1 (ja) * 2009-08-06 2011-02-10 昭和電工株式会社 蛍光体及びその製造方法、並びにそれを用いた発光装置
WO2011024882A1 (ja) * 2009-08-31 2011-03-03 シャープ株式会社 液晶表示装置
JP2011054659A (ja) * 2009-08-31 2011-03-17 Sharp Corp 発光装置及びそれを用いた液晶表示装置
US20110062474A1 (en) * 2009-09-14 2011-03-17 Advanced Optoelectronic Technology Inc. Light-emitting diode device and fabrication method thereof
CN102005529A (zh) * 2010-05-11 2011-04-06 日月光半导体制造股份有限公司 发光二极管的封装结构与封装制作工艺
JP2012003073A (ja) * 2010-06-17 2012-01-05 Sharp Corp 液晶表示装置
JP2012527110A (ja) * 2009-05-11 2012-11-01 セミエルイーディーズ オプトエレクトロニクス カンパニー リミテッド 光抽出粗面構造を有するｌｅｄ装置及びその製造方法
US20130264934A1 (en) * 2010-11-25 2013-10-10 Shinji Osaki Light emitting device, led light source for plant cultivation, and plant factory
US8603361B2 (en) 2008-07-31 2013-12-10 Kabushiki Kaisha Toshiba Fluorescent substance and light-emitting device employing the same
EP2543714A4 (en) * 2010-03-01 2014-04-23 Ube Industries LI-CONTAINING FLUORESCENT BETA-SIALON PARTICLES, METHOD FOR THE PRODUCTION THEREOF AND LIGHTING DEVICE AND IMAGE DISPLAY DEVICE
CN105199721A (zh) * 2015-09-23 2015-12-30 江苏博睿光电有限公司 一种用于液晶背光源的氮氧化物荧光粉及其制备方法
CN105529392A (zh) * 2010-06-22 2016-04-27 欧司朗光电半导体有限公司 半导体器件和用于制造半导体器件的方法
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JP4868427B2 (ja) * 2008-11-13 2012-02-01 国立大学法人名古屋大学 半導体発光装置
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US8324798B2 (en) * 2010-03-19 2012-12-04 Nitto Denko Corporation Light emitting device using orange-red phosphor with co-dopants
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JP2011256340A (ja) * 2010-06-11 2011-12-22 Tohoku Univ 蛍光体と、この蛍光体を用いた蛍光体含有組成物及び発光装置、並びに画像表示装置及び照明装置
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JP5127940B2 (ja) * 2010-08-31 2013-01-23 株式会社東芝 蛍光体の製造方法
JP5127965B2 (ja) 2010-09-02 2013-01-23 株式会社東芝 蛍光体およびそれを用いた発光装置
JP5319743B2 (ja) * 2010-09-08 2013-10-16 株式会社東芝 発光装置
WO2012042452A2 (en) * 2010-09-29 2012-04-05 Koninklijke Philips Electronics N.V. Wavelength converted light emitting device
US10158057B2 (en) 2010-10-28 2018-12-18 Corning Incorporated LED lighting devices
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US8329484B2 (en) * 2010-11-02 2012-12-11 Tsmc Solid State Lighting Ltd. Phosphor with Ce3+/Ce3+, Li+ doped luminescent materials
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JP2012131999A (ja) * 2010-12-02 2012-07-12 Niigata Univ 結晶性物質、並びにそれを用いた発光装置及び白色ｌｅｄ
EP2653502A4 (en) * 2010-12-13 2014-04-30 Toray Industries PHOSPHORUS FILM, LED AND LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING AN LED
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TW201231619A (en) * 2011-01-31 2012-08-01 Everlight Electronics Co Ltd Method of preparing nitride-based red phosphor powder and package structure of light emitting diode
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JP5690159B2 (ja) 2011-02-06 2015-03-25 独立行政法人物質・材料研究機構 蛍光体、その製造方法及び発光装置
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TW200916557A (en) 2009-04-16
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EP2189509A1 (en) 2010-05-26
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CN101796157A (zh) 2010-08-04
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