[go: up one dir, main page]

WO2009031276A1 - Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物半導体微細柱状結晶の製造方法 - Google Patents

Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物半導体微細柱状結晶の製造方法 Download PDF

Info

Publication number
WO2009031276A1
WO2009031276A1 PCT/JP2008/002322 JP2008002322W WO2009031276A1 WO 2009031276 A1 WO2009031276 A1 WO 2009031276A1 JP 2008002322 W JP2008002322 W JP 2008002322W WO 2009031276 A1 WO2009031276 A1 WO 2009031276A1
Authority
WO
WIPO (PCT)
Prior art keywords
iii nitride
columnar crystal
fine columnar
semiconductor fine
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002322
Other languages
English (en)
French (fr)
Inventor
Katsumi Kishino
Akihiko Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sophia School Corp
Original Assignee
Sophia School Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sophia School Corp filed Critical Sophia School Corp
Priority to JP2009531102A priority Critical patent/JP5464518B2/ja
Priority to KR1020107007206A priority patent/KR101464802B1/ko
Priority to CN200880105385.0A priority patent/CN101796212B/zh
Priority to EP08829248.7A priority patent/EP2202329B1/en
Priority to US12/676,061 priority patent/US8896100B2/en
Publication of WO2009031276A1 publication Critical patent/WO2009031276A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

ＩＩＩ族窒化物構造体が、基板１０２表面の所定領域に形成された金属からなる表面を有する膜１０８と、少なくとも基板１０２表面上に形成されたＩＩＩ族窒化物半導体からなる微細柱状結晶１１０とを含み、前記膜１０８が形成されていない前記基板１０２表面上において、前記膜１０８上よりも前記微細柱状結晶１１０の空間占有率が高い。
PCT/JP2008/002322 2007-09-03 2008-08-27 Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物半導体微細柱状結晶の製造方法 Ceased WO2009031276A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009531102A JP5464518B2 (ja) 2007-09-03 2008-08-27 Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物半導体微細柱状結晶の製造方法
KR1020107007206A KR101464802B1 (ko) 2007-09-03 2008-08-27 Ⅰⅰⅰ족 질화물 구조체 및 ⅰⅰⅰ족 질화물 반도체 미세 주상 결정의 제조방법
CN200880105385.0A CN101796212B (zh) 2007-09-03 2008-08-27 Iii族氮化物结构体以及iii族氮化物半导体微细柱状晶体的制造方法
EP08829248.7A EP2202329B1 (en) 2007-09-03 2008-08-27 Iii nitride structure and method for manufacturing iii nitride semiconductor fine columnar crystal
US12/676,061 US8896100B2 (en) 2007-09-03 2008-08-27 III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-227935 2007-09-03
JP2007227935 2007-09-03

Publications (1)

Publication Number Publication Date
WO2009031276A1 true WO2009031276A1 (ja) 2009-03-12

Family

ID=40428600

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002322 Ceased WO2009031276A1 (ja) 2007-09-03 2008-08-27 Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物半導体微細柱状結晶の製造方法

Country Status (7)

Country Link
US (1) US8896100B2 (ja)
EP (1) EP2202329B1 (ja)
JP (1) JP5464518B2 (ja)
KR (1) KR101464802B1 (ja)
CN (1) CN101796212B (ja)
TW (1) TW200933702A (ja)
WO (1) WO2009031276A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010139546A1 (de) * 2009-06-05 2010-12-09 Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement und verfahren zu seiner herstellung
EP3696300A1 (de) 2019-02-18 2020-08-19 Aixatech GmbH Verfahren zur herstellung eines verbundmaterialkörpers insbesondere für die verwendung bei der herstellung von elektronischen oder optoelektronischen bauelementen
JP2023514321A (ja) * 2020-02-25 2023-04-05 マイクロソフト テクノロジー ライセンシング，エルエルシー ナノワイヤ向けの改善された選択性を有する選択的エリア成長

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013009824A1 (de) * 2013-06-11 2014-12-11 Forschungsverbund Berlin E.V. Halbleitervorrichtung mit Nanosäulen aus Gruppe III-Nitridmaterial und Herstellungsverfahren für eine solche Halbleitervorrichtung
FR3019188B1 (fr) * 2014-03-27 2017-11-24 Commissariat Energie Atomique Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation
US10696899B2 (en) 2017-05-09 2020-06-30 International Business Machines Corporation Light emitting shell in multi-compartment microcapsules
US10357921B2 (en) 2017-05-24 2019-07-23 International Business Machines Corporation Light generating microcapsules for photo-curing
US10900908B2 (en) 2017-05-24 2021-01-26 International Business Machines Corporation Chemiluminescence for tamper event detection
US10392452B2 (en) 2017-06-23 2019-08-27 International Business Machines Corporation Light generating microcapsules for self-healing polymer applications
CN110760797B (zh) * 2019-11-27 2021-05-28 宁波工业技术研究院 一种表面强韧抗冲蚀防护涂层及其制备方法与应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007131527A (ja) * 2006-12-21 2007-05-31 Sharp Corp 窒化物半導体基板、窒化物半導体レーザ素子、窒化物半導体基板の製造方法、および窒化物半導体レーザ素子の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273661A (ja) * 2003-03-07 2004-09-30 Sumitomo Chem Co Ltd 窒化ガリウム単結晶基板の製造方法
JP4457576B2 (ja) * 2003-05-08 2010-04-28 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物結晶およびその製造方法
CN1594068A (zh) * 2004-07-16 2005-03-16 天津理工大学 一种基于多孔氧化铝模板纳米掩膜法制备纳米材料阵列体系的方法
DE102004041894B3 (de) * 2004-08-30 2006-03-09 Infineon Technologies Ag Speicherbauelement (CBRAM) mit Speicherzellen auf der Basis eines in seinem Widerstandswert änderbaren aktiven Festkörper-Elektrolytmaterials und Herstellungsverfahren dafür
TWI442456B (zh) * 2004-08-31 2014-06-21 Sophia School Corp 發光元件
KR101019941B1 (ko) * 2006-03-10 2011-03-09 에스티씨. 유엔엠 Ｇａｎ 나노선의 펄스 성장 및 ⅲ 족 질화물 반도체 기판 물질과 디바이스에서의 어플리케이션
JP5253740B2 (ja) 2007-01-09 2013-07-31 学校法人上智学院 Ｉｉｉ族窒化物半導体微細柱状結晶の製造方法およびｉｉｉ族窒化物構造体
US9680058B2 (en) * 2007-11-27 2017-06-13 Sophia School Corporation Group-III nitride structure including a fine wall-shaped structure containing a group-III nitridesemiconductor crystal and method for producing a group-III nitride structure including a fine wall-shaped structure containing a group-III nitride semiconductor crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007131527A (ja) * 2006-12-21 2007-05-31 Sharp Corp 窒化物半導体基板、窒化物半導体レーザ素子、窒化物半導体基板の製造方法、および窒化物半導体レーザ素子の製造方法

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
H. SEKIGUCHI; T. NAKAZATO; A. KIKUCHI; K. KISHINO, JOURNAL OF CRYSTAL GROWTH
H. TANG; S. HAFFOUZ; J. A. BARDWELL, APPLIED PHYSICS LETTERS, vol. 88, 2006, pages 172110
M. YOSHIZAWA; A. KIKUCHI; M. MORI; N. FUJITA; K. KISHINO, JPN. J. APPL. PHYS., vol. 36, 1997, pages L459 - L462
See also references of EP2202329A4
SHUNSUKE ISHIZAWA ET AL.: "Al Nano Pattern o Mochiita GaN Nanocolumn no Sentaku Seicho", EXTENDED ABSTRACTS; THE JAPAN SOCIETY OF APPLIED PHYSICS, vol. 54 th, no. 1, 27 March 2007 (2007-03-27), pages 382 *
SHUNSUKE ISHIZAWA ET AL.: "Al Usumaku Pattern o Mochiita GaN Nanocolumn no Sentaku Seicho", EXTENDED ABSTRACTS; THE JAPAN SOCIETY OF APPLIED PHYSICS, vol. 67 th, no. 1, 29 August 2006 (2006-08-29), pages 314 *
T. MARTENSSON; P. CARLBERG; M. BORGSTROM; L. MONTELIUS; W. SEIFERT; L. SAMUELSON, NANO LETTERS, vol. 4, 2004, pages 699
YOSHIYUKI HOSHINO ET AL.: "Ti Micro Pattern o Mochiita GaN Nanocolumn no Sentaku Seicho", EXTENDED ABSTRACTS; THE JAPAN SOCIETY OF APPLIED PHYSICS, vol. 68 th, no. 1, 4 September 2007 (2007-09-04), pages 350 *
YOSHIZAWA M ET AL. *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010139546A1 (de) * 2009-06-05 2010-12-09 Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement und verfahren zu seiner herstellung
EP3696300A1 (de) 2019-02-18 2020-08-19 Aixatech GmbH Verfahren zur herstellung eines verbundmaterialkörpers insbesondere für die verwendung bei der herstellung von elektronischen oder optoelektronischen bauelementen
JP2023514321A (ja) * 2020-02-25 2023-04-05 マイクロソフト テクノロジー ライセンシング，エルエルシー ナノワイヤ向けの改善された選択性を有する選択的エリア成長

Also Published As

Publication number Publication date
CN101796212A (zh) 2010-08-04
JP5464518B2 (ja) 2014-04-09
EP2202329A1 (en) 2010-06-30
KR20100067101A (ko) 2010-06-18
CN101796212B (zh) 2014-04-09
KR101464802B1 (ko) 2014-11-24
JPWO2009031276A1 (ja) 2010-12-09
EP2202329B1 (en) 2016-05-04
TW200933702A (en) 2009-08-01
US8896100B2 (en) 2014-11-25
EP2202329A4 (en) 2012-08-08
US20100193910A1 (en) 2010-08-05

Similar Documents

Publication Publication Date Title
WO2009031276A1 (ja) Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物半導体微細柱状結晶の製造方法
TW200603247A (en) SOI substrate and method for manufacturing the same
WO2009019837A1 (ja) 炭化珪素半導体素子およびその製造方法
WO2008066894A3 (en) Substrate for a flexible microelectronic assembly
WO2005050711A3 (en) A method for fabricating semiconductor devices using strained silicon bearing material
WO2008042732A3 (en) Recessed sti for wide transistors
WO2005122285A3 (en) Methods and devices for fabricating and assembling printable semiconductor elements
WO2008103331A3 (en) Wide-bandgap semiconductor devices
WO2005091370A8 (en) Method for manufacturing integrated circuit
WO2005013349A3 (en) Controlled growth of highly uniform, oxide layers, especially ultrathin layers
WO2007124209A3 (en) Stressor integration and method thereof
SG150571A1 (en) Semiconductor heterostructure and method for forming a semiconductor heterostructure
WO2007127925A3 (en) Technique for stable processing of thin/fragile substrates
TW200614395A (en) Bumping process and structure thereof
TW200701335A (en) Nitride semiconductor device and manufacturing mathod thereof
EP2325871A3 (en) Semiconductor device and method of manufacturing the same
TW200620409A (en) Mask blank substrate, mask blank, exposure mask, mask blank substrate manufacturing method, and semiconductor manufacturing method
EP1577943A3 (en) Semiconductor substrate, manufacturing method therefor, and semiconductor device
WO2009004889A1 (ja) 薄膜シリコンウェーハ及びその作製法
WO2003021651A1 (en) Polishing fluid for metallic film and method for producing semiconductor substrate using the same
WO2010007560A3 (en) Semiconductor device and manufacturing method
TW200709333A (en) Method for fabricating semiconductor device
TW200741863A (en) Method and device for depositing a protective layer during an etching procedure
WO2007098230A3 (en) Shallow trench isolation structure
TW200741962A (en) Interconnect structure and method of forming the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880105385.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08829248

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009531102

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 12676061

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008829248

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20107007206

Country of ref document: KR

Kind code of ref document: A