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WO2009028804A3 - Image sensor in capable of measuring the intensity of a ultraviolet rays - Google Patents

Image sensor in capable of measuring the intensity of a ultraviolet rays Download PDF

Info

Publication number
WO2009028804A3
WO2009028804A3 PCT/KR2008/004445 KR2008004445W WO2009028804A3 WO 2009028804 A3 WO2009028804 A3 WO 2009028804A3 KR 2008004445 W KR2008004445 W KR 2008004445W WO 2009028804 A3 WO2009028804 A3 WO 2009028804A3
Authority
WO
WIPO (PCT)
Prior art keywords
image sensor
intensity
measuring
ultraviolet rays
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2008/004445
Other languages
French (fr)
Other versions
WO2009028804A2 (en
Inventor
Byoung Su Lee
Jong Phil Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix System IC Inc
Original Assignee
Siliconfile Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconfile Technologies Inc filed Critical Siliconfile Technologies Inc
Publication of WO2009028804A2 publication Critical patent/WO2009028804A2/en
Publication of WO2009028804A3 publication Critical patent/WO2009028804A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

Provided is an image sensor capable of measuring intensity of ultraviolet (UV) rays including: a photosensor used to sense UV rays; and an image sensor region which is used to sense an image signal and on which a photodiode array is formed, wherein the UV sensor and the image sensor region are formed on the same semiconductor substrate.
PCT/KR2008/004445 2007-08-24 2008-07-30 Image sensor in capable of measuring the intensity of a ultraviolet rays Ceased WO2009028804A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070085266A KR100926533B1 (en) 2007-08-24 2007-08-24 Image sensor to measure the intensity of ultraviolet rays
KR10-2007-0085266 2007-08-24

Publications (2)

Publication Number Publication Date
WO2009028804A2 WO2009028804A2 (en) 2009-03-05
WO2009028804A3 true WO2009028804A3 (en) 2009-04-23

Family

ID=40387988

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/004445 Ceased WO2009028804A2 (en) 2007-08-24 2008-07-30 Image sensor in capable of measuring the intensity of a ultraviolet rays

Country Status (2)

Country Link
KR (1) KR100926533B1 (en)
WO (1) WO2009028804A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2971888A1 (en) 2011-02-23 2012-08-24 St Microelectronics Crolles 2 DEVICE AND METHOD FOR MEASURING LIGHT ENERGY RECEIVED BY AT LEAST ONE PHOTOSITY.

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970004490B1 (en) * 1993-09-14 1997-03-28 엘지전자 주식회사 Detecting sensor of ultraviolet rays
JP2004198288A (en) * 2002-12-19 2004-07-15 Sharp Corp Camera system
JP2005202235A (en) * 2004-01-16 2005-07-28 Nec Corp Automatic flashing device and method for portable terminal
US7193241B2 (en) * 2004-02-16 2007-03-20 Kabushiki Kaisha Kobe Seiko Sho Ultraviolet sensor and method for manufacturing the same
KR20080032978A (en) * 2006-10-12 2008-04-16 삼성전기주식회사 UV light-receiving photodiode and image sensor comprising the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100800309B1 (en) * 2006-05-26 2008-02-01 마루엘에스아이 주식회사 Image sensor including ultraviolet sensor, readout circuit for ultraviolet sensor and ultraviolet sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970004490B1 (en) * 1993-09-14 1997-03-28 엘지전자 주식회사 Detecting sensor of ultraviolet rays
JP2004198288A (en) * 2002-12-19 2004-07-15 Sharp Corp Camera system
JP2005202235A (en) * 2004-01-16 2005-07-28 Nec Corp Automatic flashing device and method for portable terminal
US7193241B2 (en) * 2004-02-16 2007-03-20 Kabushiki Kaisha Kobe Seiko Sho Ultraviolet sensor and method for manufacturing the same
KR20080032978A (en) * 2006-10-12 2008-04-16 삼성전기주식회사 UV light-receiving photodiode and image sensor comprising the same

Also Published As

Publication number Publication date
KR100926533B1 (en) 2009-11-12
KR20090020738A (en) 2009-02-27
WO2009028804A2 (en) 2009-03-05

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