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WO2009028424A1 - 電子素子及び電気伝導度制御方法 - Google Patents

電子素子及び電気伝導度制御方法 Download PDF

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Publication number
WO2009028424A1
WO2009028424A1 PCT/JP2008/065042 JP2008065042W WO2009028424A1 WO 2009028424 A1 WO2009028424 A1 WO 2009028424A1 JP 2008065042 W JP2008065042 W JP 2008065042W WO 2009028424 A1 WO2009028424 A1 WO 2009028424A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrical conductivity
electronic element
control method
conductivity control
accordance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065042
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English (en)
French (fr)
Inventor
Naoshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Okayama University NUC
Original Assignee
Okayama University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okayama University NUC filed Critical Okayama University NUC
Priority to JP2009530089A priority Critical patent/JP5273621B2/ja
Publication of WO2009028424A1 publication Critical patent/WO2009028424A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors

Landscapes

  • Thermistors And Varistors (AREA)

Abstract

　電子素子１は、入射した光３のエネルギに応じて電気伝導度が変化する電気伝導度変化体２を備える。電気伝導度変化体２は、ＲＦｅ２Ｏ４を含み、低いエネルギの光の入射に応じて内部の電子の状態が変化することで、その電気伝導度が変化する。これにより、低いエネルギの光に応じて電気伝導度を変化させることが可能な電子素子が実現される。
PCT/JP2008/065042 2007-08-24 2008-08-22 電子素子及び電気伝導度制御方法 Ceased WO2009028424A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009530089A JP5273621B2 (ja) 2007-08-24 2008-08-22 光検出素子及び太陽電池素子

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-219049 2007-08-24
JP2007219049 2007-08-24
JP2008-099466 2008-04-07
JP2008099466 2008-04-07

Publications (1)

Publication Number Publication Date
WO2009028424A1 true WO2009028424A1 (ja) 2009-03-05

Family

ID=40387146

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065042 Ceased WO2009028424A1 (ja) 2007-08-24 2008-08-22 電子素子及び電気伝導度制御方法

Country Status (2)

Country Link
JP (1) JP5273621B2 (ja)
WO (1) WO2009028424A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010023971A1 (ja) * 2008-08-29 2010-03-04 国立大学法人岡山大学 酸化物及び電気導体の電気物性制御方法
WO2010038787A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 光電変換素子及びその製造方法
WO2010038788A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 電流制御素子及びその製造方法
WO2010038785A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 光センサ及びその製造方法
JP2016530568A (ja) * 2013-08-30 2016-09-29 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 状態変化可能なデバイス、及び、メモリ状態を記憶するための方法
CN107104166A (zh) * 2017-05-03 2017-08-29 常州大学怀德学院 一种ZnO/NiFe2O4纳米阵列复合异质结材料及其制备的太阳能电池

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000095522A (ja) * 1998-06-29 2000-04-04 Sharp Corp ペロブスカイト型マンガン酸化物薄膜、その製造方法及びそれを用いた赤外線検出素子
JP2004172164A (ja) * 2002-11-15 2004-06-17 Zenji Hiroi 遷移金属酸化物光伝導デバイス

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000095522A (ja) * 1998-06-29 2000-04-04 Sharp Corp ペロブスカイト型マンガン酸化物薄膜、その製造方法及びそれを用いた赤外線検出素子
JP2004172164A (ja) * 2002-11-15 2004-06-17 Zenji Hiroi 遷移金属酸化物光伝導デバイス

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
HAMAKAWA YOSHIHIRO ET AL: "Advanced Electronics I-3 Taiyo Energy Kogaku", BAIFUKAN, 20 May 1994 (1994-05-20), pages 20 - 23 *
IIDA J ET AL: "Magnetization and Spin Correlation of Two-Dimensional Triangular Antiferromagnet LuFe(2)O(4)", JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, vol. 62, no. 5, May 1993 (1993-05-01), pages 1723 - 1735 *
IKDEA N ET AL: "Ferroelectricity from iron valence ordering in the charge-frustrated system LuFe(2)O(4)", NATURE, vol. 436, no. 7054, August 2005 (2005-08-01), pages 1136 - 1138 *
IKEDA N ET AL: "Charge frustration and Dielectric Dispersion in LuFe(2)O(4)", JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, vol. 69, no. 5, May 2000 (2000-05-01), pages 1526 - 1532 *
KIMIZUKA N ET AL: "The Systems R(2)O(3)-M(2)O(3)-M'O", HANDBOOK ON THE PHYSICS AND CHEMISTRY OF RARE EARTHS, vol. 13, 1990, pages 283 - 384 *
TOKUNAGA Y ET AL: "Rotation of orbital stripes and the consequent charge-polarized statee in bilayer magnetics", NATURE MATERIALS, vol. 5, December 2006 (2006-12-01), pages 937 - 941 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010023971A1 (ja) * 2008-08-29 2010-03-04 国立大学法人岡山大学 酸化物及び電気導体の電気物性制御方法
WO2010038787A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 光電変換素子及びその製造方法
WO2010038788A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 電流制御素子及びその製造方法
WO2010038785A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 光センサ及びその製造方法
JP5360837B2 (ja) * 2008-09-30 2013-12-04 国立大学法人 岡山大学 光センサ及びその製造方法
JP5360838B2 (ja) * 2008-09-30 2013-12-04 国立大学法人 岡山大学 光電変換素子及びその製造方法
JP5717063B2 (ja) * 2008-09-30 2015-05-13 国立大学法人 岡山大学 電流制御素子及びその製造方法
JP2016530568A (ja) * 2013-08-30 2016-09-29 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 状態変化可能なデバイス、及び、メモリ状態を記憶するための方法
US10692577B2 (en) 2013-08-30 2020-06-23 International Business Machines Corporation State-changeable device
US10762962B2 (en) 2013-08-30 2020-09-01 International Business Machines Corporation State-changeable device
CN107104166A (zh) * 2017-05-03 2017-08-29 常州大学怀德学院 一种ZnO/NiFe2O4纳米阵列复合异质结材料及其制备的太阳能电池

Also Published As

Publication number Publication date
JP5273621B2 (ja) 2013-08-28
JPWO2009028424A1 (ja) 2010-12-02

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