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WO2009028191A1 - プラズマドーピング処理装置及び方法 - Google Patents

プラズマドーピング処理装置及び方法 Download PDF

Info

Publication number
WO2009028191A1
WO2009028191A1 PCT/JP2008/002341 JP2008002341W WO2009028191A1 WO 2009028191 A1 WO2009028191 A1 WO 2009028191A1 JP 2008002341 W JP2008002341 W JP 2008002341W WO 2009028191 A1 WO2009028191 A1 WO 2009028191A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma doping
doping treatment
flow quantity
substrate cooling
leak
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002341
Other languages
English (en)
French (fr)
Inventor
Keiichi Nakamoto
Yuichiro Sasaki
Katsumi Okashita
Bunji Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to JP2008558578A priority Critical patent/JP4368932B2/ja
Priority to US12/439,298 priority patent/US7820230B2/en
Publication of WO2009028191A1 publication Critical patent/WO2009028191A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Plasma Technology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　基板冷却用ガスが前記真空容器（１１）内へ漏れ量を流量測定装置（１４）で測定して、漏れ量に応じて、基板冷却用ガスと同じ希釈用ガスの流量を制御装置（１００）で制御するか、又は、プラズマドーピング時間を長くする。
PCT/JP2008/002341 2007-08-31 2008-08-28 プラズマドーピング処理装置及び方法 Ceased WO2009028191A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008558578A JP4368932B2 (ja) 2007-08-31 2008-08-28 プラズマドーピング処理装置及び方法
US12/439,298 US7820230B2 (en) 2007-08-31 2008-08-28 Plasma doping processing device and method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007225500 2007-08-31
JP2007-225500 2007-08-31

Publications (1)

Publication Number Publication Date
WO2009028191A1 true WO2009028191A1 (ja) 2009-03-05

Family

ID=40386930

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002341 Ceased WO2009028191A1 (ja) 2007-08-31 2008-08-28 プラズマドーピング処理装置及び方法

Country Status (3)

Country Link
US (1) US7820230B2 (ja)
JP (1) JP4368932B2 (ja)
WO (1) WO2009028191A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10126716B2 (en) * 2014-02-11 2018-11-13 Saudi Basic Industries Corporation Electronic bypass system
JP7134863B2 (ja) * 2018-12-27 2022-09-12 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6139519A (ja) * 1984-07-31 1986-02-25 Hitachi Ltd プラズマ処理装置
WO2002084724A1 (en) * 2001-04-09 2002-10-24 Matsushita Electric Industrial Co., Ltd. Method for surface treatment and system for fabricating semiconductor device
WO2004095477A2 (en) * 2003-04-22 2004-11-04 Axcelis Technologies Inc. High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
JP2005136350A (ja) * 2003-10-31 2005-05-26 Tokyo Electron Ltd 静電吸着装置、プラズマ処理装置及びプラズマ処理方法
WO2006098109A1 (ja) * 2005-02-23 2006-09-21 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法及び装置
JP2007134520A (ja) * 2005-11-10 2007-05-31 Hitachi High-Technologies Corp 集束イオンビーム装置及び試料処理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912065A (en) * 1987-05-28 1990-03-27 Matsushita Electric Industrial Co., Ltd. Plasma doping method
EP0397315B1 (en) 1989-05-08 1995-03-01 Applied Materials, Inc. Method and apparatus for heating and cooling semiconductor wafers in semiconductor wafer processing equipment
JPH05166757A (ja) 1991-12-13 1993-07-02 Tokyo Electron Ltd 被処理体の温調装置
JPH07161696A (ja) 1993-12-04 1995-06-23 Anelva Corp 基板冷却装置
JPH07231032A (ja) 1994-02-15 1995-08-29 Oki Electric Ind Co Ltd 試料保持装置
US6254398B1 (en) * 2000-04-24 2001-07-03 Taiwan Semiconductor Manufacturing Company Method for initiating a helium alarm particle detector in a dry etching system prior to initiation of the etching process
US20040011468A1 (en) * 2000-05-30 2004-01-22 Jun Hirose Gas introduction system for temperature adjustment of object to be processed
JP2004047696A (ja) 2002-07-11 2004-02-12 Matsushita Electric Ind Co Ltd プラズマドーピング方法及び装置、整合回路
JP2005072521A (ja) 2003-08-28 2005-03-17 Hitachi Ltd プラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6139519A (ja) * 1984-07-31 1986-02-25 Hitachi Ltd プラズマ処理装置
WO2002084724A1 (en) * 2001-04-09 2002-10-24 Matsushita Electric Industrial Co., Ltd. Method for surface treatment and system for fabricating semiconductor device
WO2004095477A2 (en) * 2003-04-22 2004-11-04 Axcelis Technologies Inc. High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
JP2005136350A (ja) * 2003-10-31 2005-05-26 Tokyo Electron Ltd 静電吸着装置、プラズマ処理装置及びプラズマ処理方法
WO2006098109A1 (ja) * 2005-02-23 2006-09-21 Matsushita Electric Industrial Co., Ltd. プラズマドーピング方法及び装置
JP2007134520A (ja) * 2005-11-10 2007-05-31 Hitachi High-Technologies Corp 集束イオンビーム装置及び試料処理方法

Also Published As

Publication number Publication date
US7820230B2 (en) 2010-10-26
JPWO2009028191A1 (ja) 2010-11-25
JP4368932B2 (ja) 2009-11-18
US20090317963A1 (en) 2009-12-24

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