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WO2009028065A1 - イオン注入装置、基板クランプ機構、及びイオン注入方法 - Google Patents

イオン注入装置、基板クランプ機構、及びイオン注入方法 Download PDF

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Publication number
WO2009028065A1
WO2009028065A1 PCT/JP2007/066855 JP2007066855W WO2009028065A1 WO 2009028065 A1 WO2009028065 A1 WO 2009028065A1 JP 2007066855 W JP2007066855 W JP 2007066855W WO 2009028065 A1 WO2009028065 A1 WO 2009028065A1
Authority
WO
WIPO (PCT)
Prior art keywords
ion implantation
disk
substrate
clamping mechanism
implantation device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/066855
Other languages
English (en)
French (fr)
Inventor
Hidenori Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to JP2009529914A priority Critical patent/JP5035345B2/ja
Priority to PCT/JP2007/066855 priority patent/WO2009028065A1/ja
Publication of WO2009028065A1 publication Critical patent/WO2009028065A1/ja
Priority to US12/702,779 priority patent/US8063388B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/201—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated for mounting multiple objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/204—Means for introducing and/or outputting objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

【課題】バッチ式のイオン注入装置において、ディスクと基板との位置合わせを簡単に行うことが可能なイオン注入装置、基板クランプ機構、及びイオン注入方法を提供すること。 【解決手段】第１の軸Aを中心にして回動するディスク１８と、第２の軸Bを中心にしてディスク１８上で回動自在であり、錘付きホルダー５０が周囲に装着された基板Wが載せられるパッド３１と、パッド３１の周囲のディスク１８に固定された固定ピン３０と、ディスク１８の回動運動により、自身の遠心力で該ディスク１８上をスライドして、固定ピン３０と協働してホルダー５０をクランプするスライド片３２と、基板Wにイオンビーム２０を照射するイオンビーム発生部５とを有するイオン注入装置による。
PCT/JP2007/066855 2007-08-30 2007-08-30 イオン注入装置、基板クランプ機構、及びイオン注入方法 Ceased WO2009028065A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009529914A JP5035345B2 (ja) 2007-08-30 2007-08-30 イオン注入装置、基板クランプ機構、及びイオン注入方法
PCT/JP2007/066855 WO2009028065A1 (ja) 2007-08-30 2007-08-30 イオン注入装置、基板クランプ機構、及びイオン注入方法
US12/702,779 US8063388B2 (en) 2007-08-30 2010-02-09 Ion implantation apparatus, substrate clamping mechanism, and ion implantation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/066855 WO2009028065A1 (ja) 2007-08-30 2007-08-30 イオン注入装置、基板クランプ機構、及びイオン注入方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/702,779 Continuation US8063388B2 (en) 2007-08-30 2010-02-09 Ion implantation apparatus, substrate clamping mechanism, and ion implantation method

Publications (1)

Publication Number Publication Date
WO2009028065A1 true WO2009028065A1 (ja) 2009-03-05

Family

ID=40386809

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/066855 Ceased WO2009028065A1 (ja) 2007-08-30 2007-08-30 イオン注入装置、基板クランプ機構、及びイオン注入方法

Country Status (3)

Country Link
US (1) US8063388B2 (ja)
JP (1) JP5035345B2 (ja)
WO (1) WO2009028065A1 (ja)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2320454A1 (en) * 2009-11-05 2011-05-11 S.O.I.Tec Silicon on Insulator Technologies Substrate holder and clipping device
US8223582B2 (en) 2010-04-02 2012-07-17 Soitec Pseudo-inverter circuit on SeOI
US8304833B2 (en) 2010-01-14 2012-11-06 Soitec Memory cell with a channel buried beneath a dielectric layer
US8305803B2 (en) 2010-01-14 2012-11-06 Soitec DRAM memory cell having a vertical bipolar injector
US8325506B2 (en) 2010-01-14 2012-12-04 Soitec Devices and methods for comparing data in a content-addressable memory
US8358552B2 (en) 2010-03-11 2013-01-22 Soitec Nano-sense amplifier
US8384425B2 (en) 2009-12-08 2013-02-26 Soitec Arrays of transistors with back control gates buried beneath the insulating film of a semiconductor-on-insulator substrate
US8432216B2 (en) 2010-03-03 2013-04-30 Soitec Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer
US8455938B2 (en) 2010-04-22 2013-06-04 Soitec Device comprising a field-effect transistor in a silicon-on-insulator
US8508289B2 (en) 2009-12-08 2013-08-13 Soitec Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer
US8575697B2 (en) 2010-03-08 2013-11-05 Soitec SRAM-type memory cell
US8664712B2 (en) 2009-12-08 2014-03-04 Soitec Flash memory cell on SeOI having a second control gate buried under the insulating layer
CN104054155A (zh) * 2011-11-15 2014-09-17 Gtat公司 离子注入设备和注入离子的方法
US9035474B2 (en) 2010-04-06 2015-05-19 Soitec Method for manufacturing a semiconductor substrate
US9490264B2 (en) 2010-01-14 2016-11-08 Soitec Device having a contact between semiconductor regions through a buried insulating layer, and process for fabricating said device
WO2023177506A1 (en) * 2022-03-14 2023-09-21 Applied Materials, Inc. Variable rotation rate batch implanter
CN120319647A (zh) * 2025-06-13 2025-07-15 浙江中科尚弘离子装备工程有限公司 一种用于离子注入机的晶圆取料装置和方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8746666B2 (en) 2011-05-05 2014-06-10 Varian Semiconductor Equipment Associates, Inc. Media carrier
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
CN117766366B (zh) * 2023-12-27 2024-06-21 滁州华瑞微电子科技有限公司 一种半导体加工用离子注入设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0391656U (ja) * 1989-12-27 1991-09-18
JPH0676783A (ja) * 1992-08-25 1994-03-18 Toshiba Corp 半導体装置の製造方法およびその製造装置
JP2003501828A (ja) * 1999-06-08 2003-01-14 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド ウエハ方向センサー

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3003088B2 (ja) 1994-06-10 2000-01-24 住友イートンノバ株式会社 イオン注入装置
GB2349269A (en) * 1999-04-19 2000-10-25 Applied Materials Inc Ion implanter
JP3091656U (ja) 2002-07-25 2003-02-07 上銀科技股▲分▼有限公司 ボールネジ冷却装置
JP2004253756A (ja) 2002-12-24 2004-09-09 Hitachi High-Tech Electronics Engineering Co Ltd 基板搭載装置、搬送アーム、半導体ウェーハの位置決め方法、基板の検査装置、及び基板の検査方法
JP4362414B2 (ja) 2003-12-18 2009-11-11 株式会社リコー ワークセンタリング・クランプ装置、回転駆動装置及び電子ビーム露光装置
US7385208B2 (en) * 2005-07-07 2008-06-10 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for implant dosage control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0391656U (ja) * 1989-12-27 1991-09-18
JPH0676783A (ja) * 1992-08-25 1994-03-18 Toshiba Corp 半導体装置の製造方法およびその製造装置
JP2003501828A (ja) * 1999-06-08 2003-01-14 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド ウエハ方向センサー

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2320454A1 (en) * 2009-11-05 2011-05-11 S.O.I.Tec Silicon on Insulator Technologies Substrate holder and clipping device
US8664712B2 (en) 2009-12-08 2014-03-04 Soitec Flash memory cell on SeOI having a second control gate buried under the insulating layer
US8508289B2 (en) 2009-12-08 2013-08-13 Soitec Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer
US8384425B2 (en) 2009-12-08 2013-02-26 Soitec Arrays of transistors with back control gates buried beneath the insulating film of a semiconductor-on-insulator substrate
US8325506B2 (en) 2010-01-14 2012-12-04 Soitec Devices and methods for comparing data in a content-addressable memory
US8305803B2 (en) 2010-01-14 2012-11-06 Soitec DRAM memory cell having a vertical bipolar injector
US9490264B2 (en) 2010-01-14 2016-11-08 Soitec Device having a contact between semiconductor regions through a buried insulating layer, and process for fabricating said device
US8304833B2 (en) 2010-01-14 2012-11-06 Soitec Memory cell with a channel buried beneath a dielectric layer
US8432216B2 (en) 2010-03-03 2013-04-30 Soitec Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer
US8575697B2 (en) 2010-03-08 2013-11-05 Soitec SRAM-type memory cell
US8358552B2 (en) 2010-03-11 2013-01-22 Soitec Nano-sense amplifier
US8654602B2 (en) 2010-04-02 2014-02-18 Soitec Pseudo-inverter circuit on SeOI
US8223582B2 (en) 2010-04-02 2012-07-17 Soitec Pseudo-inverter circuit on SeOI
US9035474B2 (en) 2010-04-06 2015-05-19 Soitec Method for manufacturing a semiconductor substrate
US8455938B2 (en) 2010-04-22 2013-06-04 Soitec Device comprising a field-effect transistor in a silicon-on-insulator
CN104054155A (zh) * 2011-11-15 2014-09-17 Gtat公司 离子注入设备和注入离子的方法
WO2023177506A1 (en) * 2022-03-14 2023-09-21 Applied Materials, Inc. Variable rotation rate batch implanter
CN120319647A (zh) * 2025-06-13 2025-07-15 浙江中科尚弘离子装备工程有限公司 一种用于离子注入机的晶圆取料装置和方法

Also Published As

Publication number Publication date
JPWO2009028065A1 (ja) 2010-11-25
US20100133449A1 (en) 2010-06-03
US8063388B2 (en) 2011-11-22
JP5035345B2 (ja) 2012-09-26

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