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WO2009028055A1 - スパッタリングによる成膜方法とその装置 - Google Patents

スパッタリングによる成膜方法とその装置 Download PDF

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Publication number
WO2009028055A1
WO2009028055A1 PCT/JP2007/066750 JP2007066750W WO2009028055A1 WO 2009028055 A1 WO2009028055 A1 WO 2009028055A1 JP 2007066750 W JP2007066750 W JP 2007066750W WO 2009028055 A1 WO2009028055 A1 WO 2009028055A1
Authority
WO
WIPO (PCT)
Prior art keywords
supporting surface
sputtering
substrate
sputtering target
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/066750
Other languages
English (en)
French (fr)
Inventor
Tetsuya Endo
Einstein Noel Abarra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to PCT/JP2007/066750 priority Critical patent/WO2009028055A1/ja
Priority to CN2007801000632A priority patent/CN101765677B/zh
Priority to JP2009529905A priority patent/JP4503098B2/ja
Publication of WO2009028055A1 publication Critical patent/WO2009028055A1/ja
Priority to US12/684,359 priority patent/US8043483B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

　ターゲットから放出されたスパッタ粒子を、基板に対して斜めに選択入射するようなターゲットならびに基板を配置することで斜め成膜を可能とし、高い一軸磁気異方性を有する磁性膜を均一に、且つコンパクトに成膜できるようなスパッタ装置を提供する。スパッタリングターゲット支持面を有するカソードであって、該スパッタリングターゲット支持面が回転する回転軸を備えたカソードと、基板支持面を有するステージであって、該基板支持面が回転する回転軸を備えたステージとからなるスパッタリング装置であり、スパッタリングターゲット支持面と基板支持面とが互いに対面しており、それぞれの回転軸を中心として独立して回転可能に構成した。さらに、遮蔽板がスパッタリングターゲット支持面と基板支持面との間に配置されており、カソード及びステージと独立して回転可能に構成した。
PCT/JP2007/066750 2007-08-29 2007-08-29 スパッタリングによる成膜方法とその装置 Ceased WO2009028055A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2007/066750 WO2009028055A1 (ja) 2007-08-29 2007-08-29 スパッタリングによる成膜方法とその装置
CN2007801000632A CN101765677B (zh) 2007-08-29 2007-08-29 通过溅射的成膜方法及其溅射设备
JP2009529905A JP4503098B2 (ja) 2007-08-29 2007-08-29 スパッタリングによる成膜方法とその装置
US12/684,359 US8043483B2 (en) 2007-08-29 2010-01-08 Film forming method by sputtering and sputtering apparatus thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/066750 WO2009028055A1 (ja) 2007-08-29 2007-08-29 スパッタリングによる成膜方法とその装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/684,359 Continuation US8043483B2 (en) 2007-08-29 2010-01-08 Film forming method by sputtering and sputtering apparatus thereof

Publications (1)

Publication Number Publication Date
WO2009028055A1 true WO2009028055A1 (ja) 2009-03-05

Family

ID=40386799

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/066750 Ceased WO2009028055A1 (ja) 2007-08-29 2007-08-29 スパッタリングによる成膜方法とその装置

Country Status (4)

Country Link
US (1) US8043483B2 (ja)
JP (1) JP4503098B2 (ja)
CN (1) CN101765677B (ja)
WO (1) WO2009028055A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100313603A1 (en) * 2009-06-12 2010-12-16 Naoyuki Fukumoto Method for manufacturing molding die, method for manufacturing glass gob, and method for manufacturing glass molded article
WO2011058812A1 (ja) * 2009-11-10 2011-05-19 キヤノンアネルバ株式会社 スパッタリング装置による成膜方法およびスパッタリング装置
JP5280459B2 (ja) * 2008-12-25 2013-09-04 キヤノンアネルバ株式会社 スパッタリング装置
CN116334552A (zh) * 2023-04-07 2023-06-27 宁波招宝磁业有限公司 一种钕铁硼铸片溅射加工方法
JP2023091409A (ja) * 2021-12-20 2023-06-30 キヤノントッキ株式会社 スパッタ装置

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CN101842890A (zh) * 2007-11-09 2010-09-22 佳能安内华股份有限公司 在线型晶圆输送装置
WO2010021078A1 (ja) * 2008-08-18 2010-02-25 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
US9034150B2 (en) * 2012-11-29 2015-05-19 Seagate Technology Llc Thin film with tuned anisotropy and magnetic moment
KR102115476B1 (ko) * 2013-02-28 2020-05-27 삼성디스플레이 주식회사 스퍼터링 장치
KR20150078549A (ko) * 2013-12-31 2015-07-08 한국과학기술원 집적형 박막 태양전지의 제조 장치
US20160268127A1 (en) * 2015-03-13 2016-09-15 Semiconductor Energy Laboratory Co., Ltd. Oxide and Manufacturing Method Thereof
CN104851550A (zh) * 2015-05-26 2015-08-19 电子科技大学 一种大面积均匀各向异性磁芯膜及其制备方法
DE112019000682B4 (de) 2018-02-06 2023-06-29 Canon Anelva Corporation Substratbearbeitungsvorrichtung und Substratbearbeitungsverfahren
TWI702294B (zh) * 2018-07-31 2020-08-21 日商田中貴金屬工業股份有限公司 磁氣記錄媒體用濺鍍靶
US11557473B2 (en) * 2019-04-19 2023-01-17 Applied Materials, Inc. System and method to control PVD deposition uniformity
TW202104628A (zh) 2019-04-19 2021-02-01 美商應用材料股份有限公司 用於控制pvd沉積均勻性的系統及方法
US11280855B2 (en) 2019-07-29 2022-03-22 Nxp B.V. Magnetic field sensor, system, and oblique incident deposition fabrication method
US11631535B1 (en) * 2021-10-07 2023-04-18 Western Digital Technologies, Inc. Longitudinal sensor bias structures and method of formation thereof

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JP2001195711A (ja) * 1999-11-22 2001-07-19 Internatl Business Mach Corp <Ibm> 低応力かつ低抵抗のロジウム（Ｒｈ）リードの製造方法

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JPH0686354B2 (ja) 1992-11-09 1994-11-02 科学技術庁金属材料技術研究所長 結晶配向薄膜製造装置
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JP4474109B2 (ja) * 2003-03-10 2010-06-02 キヤノン株式会社 スパッタ装置
CN1234906C (zh) * 2003-04-11 2006-01-04 精碟科技股份有限公司 镀膜设备
US6818961B1 (en) * 2003-06-30 2004-11-16 Freescale Semiconductor, Inc. Oblique deposition to induce magnetic anisotropy for MRAM cells
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113330A (ja) * 1983-11-22 1985-06-19 Dainippon Printing Co Ltd 磁気記録媒体の製造方法
JPH02221371A (ja) * 1989-02-22 1990-09-04 Toppan Printing Co Ltd イオンビームスパッタ方法及びその装置並びにそれに用いるスパッタターゲット
JPH08296042A (ja) * 1995-04-17 1996-11-12 Read Rite Corp 複数イオンビームによる絶縁薄膜の形成方法
JP2001195711A (ja) * 1999-11-22 2001-07-19 Internatl Business Mach Corp <Ibm> 低応力かつ低抵抗のロジウム（Ｒｈ）リードの製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5280459B2 (ja) * 2008-12-25 2013-09-04 キヤノンアネルバ株式会社 スパッタリング装置
US20100313603A1 (en) * 2009-06-12 2010-12-16 Naoyuki Fukumoto Method for manufacturing molding die, method for manufacturing glass gob, and method for manufacturing glass molded article
WO2011058812A1 (ja) * 2009-11-10 2011-05-19 キヤノンアネルバ株式会社 スパッタリング装置による成膜方法およびスパッタリング装置
JP5364172B2 (ja) * 2009-11-10 2013-12-11 キヤノンアネルバ株式会社 スパッタリング装置による成膜方法およびスパッタリング装置
JP2023091409A (ja) * 2021-12-20 2023-06-30 キヤノントッキ株式会社 スパッタ装置
JP7473520B2 (ja) 2021-12-20 2024-04-23 キヤノントッキ株式会社 スパッタ装置
CN116334552A (zh) * 2023-04-07 2023-06-27 宁波招宝磁业有限公司 一种钕铁硼铸片溅射加工方法
CN116334552B (zh) * 2023-04-07 2023-09-05 宁波招宝磁业有限公司 一种钕铁硼铸片溅射加工方法

Also Published As

Publication number Publication date
CN101765677B (zh) 2012-01-25
CN101765677A (zh) 2010-06-30
US8043483B2 (en) 2011-10-25
JP4503098B2 (ja) 2010-07-14
JPWO2009028055A1 (ja) 2010-11-25
US20100133090A1 (en) 2010-06-03

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