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WO2009025502A3 - Solar cell having porous structure and method for fabrication thereof - Google Patents

Solar cell having porous structure and method for fabrication thereof Download PDF

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Publication number
WO2009025502A3
WO2009025502A3 PCT/KR2008/004857 KR2008004857W WO2009025502A3 WO 2009025502 A3 WO2009025502 A3 WO 2009025502A3 KR 2008004857 W KR2008004857 W KR 2008004857W WO 2009025502 A3 WO2009025502 A3 WO 2009025502A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
porous structure
impurity
impurity region
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2008/004857
Other languages
French (fr)
Other versions
WO2009025502A2 (en
Inventor
Il-Hyoung Jung
Ju-Hwan Yun
Jong-Hwan Kim
Jin-Ah Kim
Sun-Hee Kim
Ji-Hoon Ko
Young-Hyun Lee
Bum-Sung Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070084157A external-priority patent/KR20090019600A/en
Priority claimed from KR1020070106215A external-priority patent/KR20090040728A/en
Priority claimed from KR1020070131101A external-priority patent/KR20090063653A/en
Priority claimed from KR1020080001763A external-priority patent/KR20090076035A/en
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Priority to EP08793370.1A priority Critical patent/EP2181464A4/en
Priority to JP2010508317A priority patent/JP2010527163A/en
Publication of WO2009025502A2 publication Critical patent/WO2009025502A2/en
Publication of WO2009025502A3 publication Critical patent/WO2009025502A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1228—Active materials comprising only Group IV materials porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A solar cell comprises a silicon substrate having a first impurity region, and a semiconductor layer having a second impurity region, which has a porous structure consisting of a plurality of holes and is doped with a second impurity different from a first impurity used to form the first impurity region. Especially, the solar cell also includes another semiconductor layer doped with another first impurity having a high concentration, which is interposed between the silicon substrate having the first impurity region and the semiconductor layer having the second impurity region, as well as a passivation layer or an anti-reflective layer formed on an upper surface of the porous structure so as to passivate the silicon substrate.
PCT/KR2008/004857 2007-08-21 2008-08-20 Solar cell having porous structure and method for fabrication thereof Ceased WO2009025502A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08793370.1A EP2181464A4 (en) 2007-08-21 2008-08-20 SOLAR CELL HAVING A POROUS STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
JP2010508317A JP2010527163A (en) 2007-08-21 2008-08-20 Porous structure solar cell and manufacturing method thereof

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR1020070084157A KR20090019600A (en) 2007-08-21 2007-08-21 High efficiency solar cell and its manufacturing method
KR10-2007-0084157 2007-08-21
KR10-2007-0106215 2007-10-22
KR1020070106215A KR20090040728A (en) 2007-10-22 2007-10-22 Bulk shape battery using a semiconductor wafer substrate having a porous surface, and a method of manufacturing the same
KR1020070131101A KR20090063653A (en) 2007-12-14 2007-12-14 Method for manufacturing PUN junction device and solar cell comprising PUN junction device
KR10-2007-0131101 2007-12-14
KR10-2008-0001763 2008-01-07
KR1020080001763A KR20090076035A (en) 2008-01-07 2008-01-07 Bulk solar cell with surface passivated porous structure and its manufacturing method

Publications (2)

Publication Number Publication Date
WO2009025502A2 WO2009025502A2 (en) 2009-02-26
WO2009025502A3 true WO2009025502A3 (en) 2009-04-23

Family

ID=40378827

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/004857 Ceased WO2009025502A2 (en) 2007-08-21 2008-08-20 Solar cell having porous structure and method for fabrication thereof

Country Status (3)

Country Link
EP (1) EP2181464A4 (en)
JP (1) JP2010527163A (en)
WO (1) WO2009025502A2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090236317A1 (en) * 2008-03-21 2009-09-24 Midwest Research Institute Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions
KR101002682B1 (en) * 2008-08-28 2010-12-21 삼성전기주식회사 Solar cell and manufacturing method
JP5300681B2 (en) * 2009-09-30 2013-09-25 東京エレクトロン株式会社 Manufacturing method of solar cell
JP5340103B2 (en) * 2009-09-30 2013-11-13 東京エレクトロン株式会社 Solar cell
WO2011060193A1 (en) * 2009-11-11 2011-05-19 Alliance For Sustainable Energy, Llc Wet-chemical systems and methods for producing black silicon substrates
JP5424270B2 (en) 2010-05-11 2014-02-26 国立大学法人東京農工大学 Semiconductor solar cell
CN101976703B (en) * 2010-07-28 2011-12-14 常州天合光能有限公司 Process of antireflection coating battery capable of reducing surface recombination
CN101964367A (en) * 2010-08-23 2011-02-02 中国科学院微电子研究所 Substrate with porous structure and preparation method thereof
KR101658677B1 (en) * 2010-12-16 2016-09-21 엘지전자 주식회사 Solar cell and manufacturing mathod thereof
US9276153B2 (en) 2011-01-26 2016-03-01 Sumco Corporation Solar cell wafer and method of producing the same
KR101763319B1 (en) 2011-01-31 2017-08-01 한양대학교 산학협력단 Method for manufacturing a solar cell by electrochemically etching
CN103283001A (en) * 2011-03-08 2013-09-04 可持续能源联盟有限责任公司 High-efficiency black silicon photovoltaic devices with enhanced blue light response
CN102820370B (en) * 2011-06-08 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 Texture surface making treatment method for silicon wafer
CN107046079A (en) * 2016-02-05 2017-08-15 上海凯世通半导体股份有限公司 Doping method
CN106653939B (en) * 2016-11-17 2018-03-27 横店集团东磁股份有限公司 A kind of thermal oxidation technology applied to crystal silicon solar batteries
CN114583015A (en) * 2022-03-25 2022-06-03 安徽华晟新能源科技有限公司 Heterojunction battery and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990016619A (en) * 1997-08-18 1999-03-15 손욱 Manufacturing method of electroluminescent device using porous silicon
KR20030079266A (en) * 2002-04-03 2003-10-10 삼성에스디아이 주식회사 High efficient solar cell and fabrication method thereof
KR100677374B1 (en) * 2005-11-14 2007-02-02 준 신 이 Porous silicon solar cell using thin silicon substrate and its manufacturing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3269668B2 (en) * 1992-09-18 2002-03-25 株式会社日立製作所 Solar cell
CA2259777A1 (en) * 1998-01-20 1999-07-20 Osamu Anzawa Substrate for forming high-strength thin semiconductor element and method for manufacturing high-strength thin semiconductor element
KR100434537B1 (en) * 1999-03-31 2004-06-05 삼성전자주식회사 Multi layer wafer with thick sacrificial layer and fabricating method thereof
JP3838911B2 (en) * 2001-12-25 2006-10-25 京セラ株式会社 Method for manufacturing solar cell element
JP2005072388A (en) * 2003-08-26 2005-03-17 Kyocera Corp Method for manufacturing solar cell element
JP2005136062A (en) * 2003-10-29 2005-05-26 Sharp Corp Manufacturing method of solar cell
JP2005150614A (en) * 2003-11-19 2005-06-09 Sharp Corp Solar cell and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990016619A (en) * 1997-08-18 1999-03-15 손욱 Manufacturing method of electroluminescent device using porous silicon
KR20030079266A (en) * 2002-04-03 2003-10-10 삼성에스디아이 주식회사 High efficient solar cell and fabrication method thereof
KR100677374B1 (en) * 2005-11-14 2007-02-02 준 신 이 Porous silicon solar cell using thin silicon substrate and its manufacturing method

Also Published As

Publication number Publication date
JP2010527163A (en) 2010-08-05
EP2181464A4 (en) 2015-04-01
EP2181464A2 (en) 2010-05-05
WO2009025502A2 (en) 2009-02-26

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