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WO2009025337A1 - Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法、ｉｇｂｔ用シリコン単結晶ウェーハの抵抗率保証方法 - Google Patents

Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法、ｉｇｂｔ用シリコン単結晶ウェーハの抵抗率保証方法 Download PDF

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Publication number
WO2009025337A1
WO2009025337A1 PCT/JP2008/064950 JP2008064950W WO2009025337A1 WO 2009025337 A1 WO2009025337 A1 WO 2009025337A1 JP 2008064950 W JP2008064950 W JP 2008064950W WO 2009025337 A1 WO2009025337 A1 WO 2009025337A1
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Prior art keywords
single crystal
silicon single
igbt
crystal wafer
atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064950
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English (en)
French (fr)
Inventor
Shigeru Umeno
Toshiaki Ono
Manabu Nishimoto
Masataka Hourai
Yoshihiro Koga
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Sumco Corp
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Sumco Corp
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Priority to JP2009529063A priority Critical patent/JP5321460B2/ja
Publication of WO2009025337A1 publication Critical patent/WO2009025337A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　引き上げ速度マージンを拡大することが可能であるとともに、抵抗率のバラツキが小さなウェーハの製造が可能であるチョクラルスキー法によって育成されたシリコン単結晶からなるＩＧＢＴ用のシリコン単結晶ウェーハであって、 　前記シリコン単結晶に、５×１０１２ａｔｏｍｓ／ｃｍ３以上９×１０１４ａｔｏｍｓ／ｃｍ３以下の窒素がドープされるとともに、窒素起因のドナー濃度が５×１０１２ａｔｏｍｓ／ｃｍ３以下とされ、 結晶径方向全域においてＣＯＰ欠陥および転位クラスタが排除されており、格子間酸素濃度が４×１０１７ａｔｏｍｓ／ｃｍ３以下であり、ウェーハ面内における抵抗率のばらつきが５％以下である。
PCT/JP2008/064950 2007-08-21 2008-08-21 Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法、ｉｇｂｔ用シリコン単結晶ウェーハの抵抗率保証方法 Ceased WO2009025337A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529063A JP5321460B2 (ja) 2007-08-21 2008-08-21 Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007215335 2007-08-21
JP2007-215335 2007-08-21

Publications (1)

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WO2009025337A1 true WO2009025337A1 (ja) 2009-02-26

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JP (1) JP5321460B2 (ja)
WO (1) WO2009025337A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012089392A1 (en) * 2010-12-28 2012-07-05 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer
WO2012101957A1 (ja) * 2011-01-24 2012-08-02 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及びアニールウェーハ
WO2013035248A1 (ja) * 2011-09-08 2013-03-14 信越半導体株式会社 シリコン単結晶中窒素濃度算出方法および抵抗率シフト量算出方法
EP2824222A1 (en) * 2013-07-12 2015-01-14 GLobalWafers Japan Co., Ltd. Silicon single crystal and method for manufacture thereof
WO2015087507A1 (ja) * 2013-12-10 2015-06-18 株式会社アルバック 絶縁ゲートバイポーラトランジスタおよびその製造方法
JP2020033200A (ja) * 2018-08-27 2020-03-05 株式会社Sumco シリコン単結晶の製造方法及びシリコンウェーハ
CN110892512A (zh) * 2017-06-23 2020-03-17 胜高股份有限公司 硅晶片的热施主生成行为预测方法、硅晶片的评价方法及硅晶片的制备方法
JP2020202321A (ja) * 2019-06-12 2020-12-17 サンケン電気株式会社 半導体装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107151818A (zh) 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
CN107151817A (zh) 2016-03-03 2017-09-12 上海新昇半导体科技有限公司 单晶硅的生长方法及其制备的单晶硅锭
CN107604429A (zh) 2016-07-12 2018-01-19 上海新昇半导体科技有限公司 直拉生长单晶硅的方法

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JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2005206391A (ja) * 2004-01-20 2005-08-04 Shin Etsu Handotai Co Ltd シリコン単結晶基板の抵抗率保証方法及びシリコン単結晶基板の製造方法並びにシリコン単結晶基板
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

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WO2004083496A1 (ja) * 2003-02-25 2004-09-30 Sumitomo Mitsubishi Silicon Corporation シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005154172A (ja) * 2003-11-21 2005-06-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶製造装置の設計方法並びにシリコン単結晶製造装置
JP2005206391A (ja) * 2004-01-20 2005-08-04 Shin Etsu Handotai Co Ltd シリコン単結晶基板の抵抗率保証方法及びシリコン単結晶基板の製造方法並びにシリコン単結晶基板
JP2007191350A (ja) * 2006-01-19 2007-08-02 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012089392A1 (en) * 2010-12-28 2012-07-05 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer
US8961685B2 (en) 2010-12-28 2015-02-24 Siltronic Ag Method of manufacturing silicon single crystal, silicon single crystal, and wafer
JP2012148949A (ja) * 2010-12-28 2012-08-09 Siltronic Ag シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
CN103328696A (zh) * 2011-01-24 2013-09-25 信越半导体股份有限公司 单晶硅晶片的制造方法及退火晶片
CN103328696B (zh) * 2011-01-24 2016-05-11 信越半导体股份有限公司 单晶硅晶片的制造方法及退火晶片
DE112012000306B4 (de) * 2011-01-24 2021-03-18 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen eines Silizium-Einkristallwafers
DE112012000306T5 (de) 2011-01-24 2013-09-26 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen eines Silizium-Einkristallwafers und eines thermisch behandelten Wafers
WO2012101957A1 (ja) * 2011-01-24 2012-08-02 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及びアニールウェーハ
US8916953B2 (en) 2011-01-24 2014-12-23 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon single crystal wafer and annealed wafer
KR101904078B1 (ko) * 2011-09-08 2018-10-05 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 중 질소농도 산출방법 및 저항율 시프트량 산출방법
KR20140058587A (ko) * 2011-09-08 2014-05-14 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 중 질소농도 산출방법 및 저항율 시프트량 산출방법
WO2013035248A1 (ja) * 2011-09-08 2013-03-14 信越半導体株式会社 シリコン単結晶中窒素濃度算出方法および抵抗率シフト量算出方法
JP2013057585A (ja) * 2011-09-08 2013-03-28 Shin Etsu Handotai Co Ltd シリコン単結晶中窒素濃度算出方法および抵抗シフト量算出方法
EP2824222A1 (en) * 2013-07-12 2015-01-14 GLobalWafers Japan Co., Ltd. Silicon single crystal and method for manufacture thereof
CN105765726A (zh) * 2013-12-10 2016-07-13 株式会社爱发科 绝缘栅双极晶体管及其制造方法
JPWO2015087507A1 (ja) * 2013-12-10 2017-03-16 株式会社アルバック 絶縁ゲートバイポーラトランジスタおよびその製造方法
WO2015087507A1 (ja) * 2013-12-10 2015-06-18 株式会社アルバック 絶縁ゲートバイポーラトランジスタおよびその製造方法
CN110892512A (zh) * 2017-06-23 2020-03-17 胜高股份有限公司 硅晶片的热施主生成行为预测方法、硅晶片的评价方法及硅晶片的制备方法
CN110892512B (zh) * 2017-06-23 2023-06-20 胜高股份有限公司 硅晶片的热施主生成行为预测方法、硅晶片的评价方法及硅晶片的制备方法
JP7099175B2 (ja) 2018-08-27 2022-07-12 株式会社Sumco シリコン単結晶の製造方法及びシリコンウェーハ
JP2020033200A (ja) * 2018-08-27 2020-03-05 株式会社Sumco シリコン単結晶の製造方法及びシリコンウェーハ
JP2020202321A (ja) * 2019-06-12 2020-12-17 サンケン電気株式会社 半導体装置
JP7375340B2 (ja) 2019-06-12 2023-11-08 サンケン電気株式会社 半導体装置

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JP5321460B2 (ja) 2013-10-23

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