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WO2009023135A1 - Appareil pour une détection d'arc de niveau de tranche à une correspondance d'impédance de polarisation rf vers l'électrode à piédestal - Google Patents

Appareil pour une détection d'arc de niveau de tranche à une correspondance d'impédance de polarisation rf vers l'électrode à piédestal Download PDF

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Publication number
WO2009023135A1
WO2009023135A1 PCT/US2008/009529 US2008009529W WO2009023135A1 WO 2009023135 A1 WO2009023135 A1 WO 2009023135A1 US 2008009529 W US2008009529 W US 2008009529W WO 2009023135 A1 WO2009023135 A1 WO 2009023135A1
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WIPO (PCT)
Prior art keywords
coupled
input
circuit
output
arc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2008/009529
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English (en)
Inventor
John Pipitone
John Forster
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Priority claimed from US11/893,354 external-priority patent/US7737702B2/en
Priority claimed from US11/893,353 external-priority patent/US7733095B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2009023135A1 publication Critical patent/WO2009023135A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

Definitions

  • the disclosure concerns plasma reactors for processing semiconductor workpiece, and detection of arcing in such a reactor.
  • Arcing in a plasma reactor during processing of a semiconductor workpiece or wafer can destroy the workpiece or make unusable, or contaminate the reactor chamber. Therefore, detection of arcing to stop a plasma reactor from processing further wafers is essential to avoid damage to a succession of wafers.
  • PVD physical vapor deposition
  • arc detection has been confined to arcing at the sputter target at the reactor ceiling. Such arc detection has been made by monitoring the output of the high voltage D. C. power supply coupled to the sputter target at the ceiling. Voltage or current transients can reflect arcing events.
  • Plasma reactors typically have components within the reactor chamber that are consumed or degraded by their interaction with plasma.
  • the consumables may include the sputter target at the ceiling, an internal side wall coil and a process ring kit surrounding the wafer support pedestal including the electrostatic chuck (ESC) .
  • ESC electrostatic chuck
  • a plasma reactor for processing a workpiece.
  • the reactor comprises a chamber, an electrostatic chuck within the chamber having at least one chucking electrode.
  • An RF bias power generator having a shut-off control input is coupled through an impedance match coupled to the chucking electrode by an RF power conductor connected between the generator and the impedance match.
  • An RF voltage or current sensor is coupled to the RF power conductor.
  • the RF sensor is a current sensor comprising (a) a ring conductor wrapped around a portion of the RF power conductor and (b) an inductive winding having a pair of ends and wrapped around a portion of the ring conductor.
  • An arc detection comparator circuit having a comparison threshold has an input coupled to one end of the inductive winding.
  • the reactor further comprises a process controller coupled to the output of the arc detection comparator circuit and having an output coupled to the shut-off control input of the RF bias generator.
  • FIGS. IA and IB depict a plasma reactor with bipolar and monopolar electrostatic chucks, respectively, having certain wafer level arc detection and automatic shutdown features .
  • FIG. 2 is a schematic diagram depicting an RF current sensor circuit in the reactor of FIG. IA.
  • FIG. 3 is a block diagram of a signal conditioner in the reactor of FIG. IA.
  • FIG. 4 is a schematic diagram depicting an RF voltage sensor circuit in the reactor of FIG. IA.
  • FIGS. 5A and 5B are schematic diagrams of modifications of the embodiments of FIGS. IA and IB, respectively, having a wafer level arc detecting circuit on an electrostatic chuck and employing a voltage sensor.
  • FIGS. 6A and 6B are schematic diagrams of modifications of the embodiments of FIGS. IA and IB, respectively, having a wafer level arc detecting circuit on an electrostatic chuck employing a current sensor.
  • FIGS. 7A and 7B together constitute a flow diagram depicting the operation of a reactor controller in any of the foregoing embodiments.
  • FIG. 8 depicts a retrofitting of the arc sensing and communication features of FIG. IA into a reactor having a local area network.
  • FIG. 9 depicts a retrofitting of the arc sensing and communication features of FIG. IA into a reactor having a digital input/output network.
  • FIG. 10 depicts a retrofitting of the arc sensing and communication features of FIG. IA into a reactor having a D. C. safety interlock loop.
  • FIG. IA depicts a PVD reactor having a system for intelligently sensing arcing at the wafer level.
  • the reactor includes a chamber 100 defined by a cylindrical side wall 102, a ceiling 104 and a floor 106. Within the interior of the chamber 100 are provided a target 110 mounted on the ceiling 104, an RF coil 112 mounted on the side wall 102 and a wafer support pedestal 114 extending upwardly from the floor 106.
  • a vacuum pump 116 evacuates the chamber 100 through a pumping port 118 in the floor 106.
  • a process gas supply 119 provides process gas (or gases) for introduction into the chamber 100.
  • the wafer support pedestal 114 may include an electrostatic chuck (ESC) 122 for holding a semiconductor wafer or workpiece 120 on a top surface of the pedestal 114.
  • the ESC 122 may consist of an insulating layer 124 resting on a conductive base 126.
  • the ESC 122 is a bipolar chuck, and there are two electrodes 128, 130 in the insulating layer 124, and a conductive center pin 132 contacting the back side of the wafer 120.
  • a chucking voltage supply 134 imposes opposite but equal D. C. voltages between the center pin 132 and the electrodes 128, 130.
  • FIG. IB depicts a variation of the embodiment of FIG.
  • FIGS. IA and IB contain common structural features, and the description below of these common features with reference to FIG. IA pertains to the embodiment of FIG. IB as well, but are not repeated for the sake of brevity.
  • D. C. power is applied to the sputter target 110 by a high voltage D. C. power generator 136.
  • Low frequency RF power is applied to the coil 112 through an RF impedance match 138 by an RF power generator 140.
  • the RF power generator 140 is connected to an RF input of the impedance match 138.
  • the RF impedance match 138 may have a low power D. C. input (not shown) in addition to the RF input.
  • D. C. input not shown
  • RF bias power of a suitable frequency (such as low frequency and/or high frequency) is applied to the ESC electrodes 128, 130 through a bias impedance match 142 and blocking capacitors 144, 146 by an RF power generator 148.
  • An RF blocking filter 150 connected between the ESC electrodes and center pin 128, 130, 132 and the DC chucking voltage supply 134 isolates the chucking voltage supply 134 from RF power.
  • RF bias power of a suitable frequency (such as low frequency and/or high frequency) is applied to the single ESC electrode 128 through the bias impedance match 142 and blocking capacitor 144 by the RF bias power generator 148.
  • a reactor controller 152 governs operation of all the active elements of the reactor. Specifically, FIG. IA indicates the communication of ON/OFF commands from the controller 152 to each of the power generators 136, 140, and 148, to the gas supply 119, to the vacuum pump 116 and to the ESC chucking voltage supply 134.
  • other active components of the reactor are likewise governed by the controller 152, including coolant pumps, lid interlocks, lift pin actuators, pedestal elevation actuators, slit valve opening, wafer handling robotics, for example.
  • Detecting plasma arcing at the wafer is difficult because of the presence of RF noise and harmonics and because of the large dynamic range of voltage or current transients at the wafer caused by non- arcing events (power generator transitions) and by arcing. These problems are overcome by sensing current or voltage changes at the RF bias power input to the ESC 122.
  • An RF sensor 154 is placed at (or connected to) an RF conductor 155 (e.g., the inner conductor of a 50 Ohm coaxial cable) running between the RF bias generator 148 and the RF bias impedance match 142.
  • the RF sensor 154 is contained inside the impedance match 142 and is located at an internal coaxial output connector (not shown) to which the coaxial cable 155 is connected.
  • the RF sensor 154 is capable of sensing an RF current or an RF voltage and generating a voltage signal proportional to the sensed current (or sensed voltage) .
  • the voltage signal is processed by a signal conditioner 156 to produce an output signal that has been filtered and peak-detected and scaled to a predetermined range.
  • An arc detect comparator 158 compares the magnitude of the output signal to a predetermined threshold value. If this threshold is exceeded by the output signal, the arc detect comparator outputs an arc flag to the reactor controller 152.
  • the reactor controller 152 responds to the arc flag by shutting down active components of reactor such as the power generators 136, 140 and 148.
  • the sensor 154 may be an RF current sensor.
  • the sensor 154 includes a ferrite ring 160 encircling the RF conductor 155 and a conductive (e.g., copper) coil 162 wrapped around a portion of the ferrite ring 160.
  • One end 162a of the coil 162 may be allowed to float electrically, while the other end 162b is the output terminal of the sensor 154.
  • One advantage of the structure of the ferrite ring 160 and coil 162 is that the current through the coil 162 is weakly coupled to the RF current through the RF power conductor 155.
  • the voltage induced on the coil 162 is attenuated and accordingly has a smaller dynamic range in response to transients or spikes in the current through the conductor 155.
  • a related feature is that the weakly coupling limits the amount of power or current drawn by the sensor 154 from the RF power in the conductor 155. As a result, the sensor 154 places only a negligible load on the RF current in the conductor 155.
  • FIG. 3 depicts the different functions in the signal conditioner 156.
  • the signal conditioner 156 includes a peak detector 164, an RF filter 166 for removing noise and providing a cleaner signal, a scaling circuit 168 for providing a predetermined range and a high impedance transducer 170 for controlling the signal amplitude range while providing a high impedance isolation between the output of the signal conditioner 156 and the sensor 154.
  • One embodiment of the signal conditioner 156 is illustrated in FIG. 2.
  • the peak detector 164 is depicted as including a diode rectifier 164a and a capacitor 164b.
  • the peak detector may include other circuit elements that provide an output level indicative of a true peak value.
  • the RF filter 166 is depicted as a pi-network including a pair of shunt capacitors 166a, 166b and a series inductor 166c.
  • the scaling circuit 168 is depicted in FIG. 2 as voltage" divider consisting of a pair of resistors 168a, 168b, whose output voltage is scaled down by the ratio of the resistance of the resistor 168a to the total resistance of the resistors 168a and 168b.
  • the transducer 170 is depicted in FIG. 2 as including an operational amplifier 171 that provides an output signal within a range (e.g., 0-10 V) determined by the amplifier gain. The gain may be controlled by a variable feedback resistor 172 connected between the amplifier input and output.
  • the amplifier 171 provides a high input impedance that isolates the signal conditioner 156 from a load placed on the signal conditioner output.
  • FIG. 4 depicts an embodiment of the sensor 154 for sensing an RF voltage on the RF conductor 155.
  • the sensor consists of a resistor divider 154a, 154b connected directly between the conductor 155 and ground, the series resistance of the resistor divider 154a, 154b being very high (on the order of megOhms) . This prevents any significant power diversion to ground.
  • the resistor 154a is 10-100 times less resistive than the resistor 154b, so that the voltage sensed by the peak detector 164 is very small compared to the voltage on the RF conductor 155. This provides the sensor 154 with a high input impedance to avoid drawing an appreciable current from the RF conductor 155.
  • the signal conditioner 156 described above with reference to FIGS. 2 and 3 may also be employed to condition the output signal of the RF voltage sensor 154 of FIG. 4.
  • FIG. 5A depicts a modification of the embodiment of FIG. IA in which arc detection is performed at the ESC electrodes 128, 130.
  • the RF bias power generator 148 and RF bias impedance match 142 of FIG. IA are not shown in the drawing of FIG. 5A, although they may be present if RF bias power is applied to the ESC electrodes 128, 130. Alternatively, no RF bias power is applied to the ESC electrodes 128, 130.
  • the sensor 154 of FIG. IA is replaced in FIG. 5A by a voltage sensor 174.
  • the voltage sensor 174 is connected across the ESC center pin 132 (that is in contact with the semiconductor workpiece or wafer 120) and a reference point.
  • the reference point may either be ground or one of the ESC electrodes 128 or 130.
  • the voltage sensor 174 is a differential amplifier, with its differential inputs connected to the center pin 132 and the reference point (e.g., ground) . Voltage transients on the wafer 120 appear as a large difference between the inputs of the differential amplifier 174. The output of the amplifier is proportional to this difference, and is furnished to the signal conditioner 156. The output of the signal conditioner is tested by the arc detect comparator 158 by comparison with a predetermined threshold, as in the embodiment of FIG. IA.
  • FIG. 5B depicts a similar modification to the embodiment of FIG. IB, in which the sensor 154 of FIG. IB is replaced in FIG. 5B by the differential amplifier 174.
  • the inputs to the differential amplifier 174 are connected to the single ESC electrode 128 and a suitable voltage reference such as ground.
  • the RF bias power generator 148 and RF bias impedance match 142 of FIG. IB are not shown in the drawing of FIG. 5B, although they may be present if RF bias power is applied to the ESC electrode 128. Alternatively, no RF bias power is applied to the ESC electrode 128.
  • Voltage transients on the wafer 120 appear as a large difference between the inputs of the differential amplifier 174.
  • the output of the amplifier is proportional to this difference, and is furnished to the signal conditioner 156.
  • the output of the signal conditioner is tested by the arc detect comparator 158 by comparison with a predetermined threshold, as in the embodiment of FIG. IA.
  • FIG. 6A illustrates a variation of the embodiment of FIG. 5A in which a current sensor 176 replaces the voltage sensor 174.
  • the current sensor 176 includes a ferrite ring 178 around the center conductor 132 and a conductive winding 180 around the ring 178.
  • One end 180a of the winding 180 is the output of the current sensor 176 and is connected to the input of the signal conditioner 156.
  • FIG. 6B illustrates a similar variation of the embodiment of FIG. 5B in which a current sensor 176' replaces the voltage sensor 174.
  • the current sensor 176' includes a ferrite ring 178' around the conductor connected to the single ESC electrode 128, and a conductive winding 180' around the ring 178.
  • One end 180a' of the winding 180' is the output of the current sensor 176' and is connected to the input of the signal conditioner 156.
  • a second RF sensor 184 is coupled to an RF power conductor 185 connected between the RF generator 140 and the RF impedance match 138 for the side wall coil 112.
  • the second RF sensor 184 may be an RF current sensor, as in FIG. 2, or an RF voltage sensor, as in FlG. 4.
  • the output of the second RF sensor 184 is applied to a second signal conditioner 186 that may be the same type of circuit as the signal conditioner 156 of FIGS. 2 and 3.
  • a second arc detect comparator 188 compares the output of the signal conditioner with a certain threshold value to determine whether an arc has occurred. If an arc has occurred, the comparator 188 generates an arc flag that is sent to the controller 152.
  • a third sensor 190 is coupled to the output of the D. C. power generator 136.
  • the output of the third sensor 190 may be applied to a third signal conditioner 192.
  • a third arc detect comparator 194 compares the output of the signal conditioner 192 with a certain threshold to determine whether an arc has occurred. Its output, an arc flag, is transmitted to the process controller 152.
  • the controller 152 may include a memory 152a for storing a sequence of instructions and a microprocessor 152b for executing those instructions.
  • the instructions represent a program that may be downloaded into the controller memory 152a for operating the reactor.
  • the program requires the controller 152 to shut off the power generators 136, 140, 148 in response to receipt of an arc flag from any of the arc detect comparators 158, 188 or 194. This program will be discussed in greater detail in a later portion of this specification.
  • Operation of the process controller 152 of FIG. IA is depicted in the flow diagram of FIGS. 7A AND 7B.
  • the process recipe may be downloaded into the controller memory 152a (block 300 of FIGS. 7A AND 7B) .
  • the reactor component history (e.g., the number of use hours for each consumable in the reactor) may also be loaded into the controller memory 152a (block 302) .
  • the controller then starts the process in the reactor (block 304) .
  • the controller 152 notes the RF power settings called for by the recipe (i.e., the RF power applied to the ESC 122 and the RF power applied to the coil 112.
  • the controller 152 predicts an RF noise level encountered by each of the sensors 154, 184 and 190. For each sensor, the controller 152 determines from the noise level an appropriate arc detection comparison threshold for each of the comparators 158, 188 and 194 (block 306 of FIGS. 7A AND 7B) . For the particular sensor, a sensed voltage (or current) level exceeding the assigned threshold is considered to be an arc event. Optionally, the controller 152 may also define a warning level threshold that is below the arc detection threshold.
  • each threshold is revised in accordance with the age of the associated reactor consumable components (block 308) . This may be done in accordance with historical data representing typical lifetimes of each consumable component in the reactor.
  • the sensor 154 detects arc events closest to the wafer 120. These are most likely affected by the condition of consumable components closest to the wafer, such as a process ring kit surrounding the ESC (not shown in FIG. IA), for example. Accordingly, the arc detect comparison threshold for the sensor 154 are revised depending upon the age of the process ring kit.
  • the sensor 184 detects arc events at the side wall coil 112.
  • the thresholds chosen for the sensor 184 are revised based upon the age of the coil 112, for example. Typically, this revision causes the threshold to increase with consumable age or hour usage, because as the consumable wears and its surface becomes rougher during exposure to plasma, it tends to experience or promote more RF noise and harmonics.
  • This revision of the arc detection threshold based upon age may be performed based upon empirical data representing the histories of a large sample of the consumable component.
  • the next step is to determine whether the upwardly adjusted threshold is at or too near the expected voltage or current level of a real arc event (block 310) . If so (YES branch of block 310), this fact is flagged (block 311) to the user and/or to the process controller 152. In one embodiment, this flag may cause the process controller 152 to shut down the reactor. The location of the sensor whose threshold has become excessive in this way is identified, and the reactor consumables closest to that detector are identified to the user as being due for replacement.
  • the adjusted thresholds are not excessive (NO branch of block 310), they are then sent to the arc detection comparators 158, 188 and 194 for use during the current process step (block 312) .
  • the controller 152 can identify the specific times of occurrence of process-mandated transients (block 314), such as the activation or deactivation of an RF power generator.
  • the controller 152 monitors each of the arc detection comparators 158, 188 and 194 for arc flags (block 316) .
  • Each of the comparators 158, 188, 194 constantly compares the output of the respective signal conditioner 156, 186, 192 with the threshold received from the controller 152 for the current process step.
  • the comparator transmits an arc flag to the controller 152.
  • the controller 152 may sample the comparator outputs at a rate of 30 MHz, for example. For each sample of each comparator 158, 188, 194, a determination is made whether an arc flag has issued (block 318) . If no flag is detected (NO branch of block 318), then the controller 152 determines whether the current process step has been completed (block 320) . If not (NO branch of block 320), the controller 152 returns to the monitoring step of block 316. Otherwise (YES branch of block 320) the controller 152 transitions to the next process step in the recipe (block 322) and loops back to the step of block 306.
  • arc flag was for a full arc event in which the arc threshold was exceeded (NO branch of block 324), then a determination is made (block 332) as to whether it coincided with a power transition time identified in the step of block 314. If so (YES branch of block 332) , the flag is ignored as a false indication (block 334) and the controller loops back to the monitoring step of block 316. Otherwise (NO branch of block 332), the arc flag is treated as valid.
  • the controller 152 uses the contents of the arc flag to identify and record in memory the location of the sensor that sensed the arc event (block 338) .
  • the controller issues "OFF" commands to each of the power generators 136, 140 and 148 (block 340) .
  • the arc flag may embody digital information identifying the particular comparator that issued the arc flag. This information is output by the controller 152 to a user interface, which can correlate sensor location with consumable components (block 342) . This feature can enable the user to better identify consumable components in the reactor chamber that need to be changed. For example, if the controller 152 determines that the arc flag was issued by the comparator 188, then it identifies the consumable component closest to the RF power monitored by the comparator, namely the side wall coil 112. For an arc flag issued by the comparator 158, the closest consumable components are those surrounding the wafer, particularly the process ring kit, and the controller 152 would associate such an arc flag with the process ring kit, for example.
  • the relevant component is the ceiling target, and the controller would associate such an arc flag with the ceiling target.
  • the controller 152 in one embodiment can provide the user different lists of possible candidate consumables for replacement for different arc flag events.
  • the process depicted in FIGS. 7A AND 7B includes, in one embodiment, dynamic adjustment of the arc detection comparison threshold for each step in the plasma process.
  • the threshold is further adjusted based upon consumable component age.
  • the controller 152 updates the thresholds in each of the comparators 158, 188, 194 as often as necessary.
  • the sensitivity of each comparator 158, 188, 194 is optimized by seeking the minimum threshold that can be used in the environment of a particular wafer process step.
  • the threshold is adjusted downwardly whenever noise conditions (for example) improve, and is adjusted upwardly when noise level increases, due to an increase in RF power level, for example.
  • the process of FIGS. 7A AND 7B further includes performing arc location identification and corresponding identification of the likeliest consumable components involved in the arc event.
  • the controller 152 communicates this information to the user, to facilitate easier management of consumables and more accurate selection of consumables needing replacement.
  • the process of FIGS. 7A AND 7B is embodied in software instructions downloaded into the controller memory 152a. In this embodiment, therefore, all the intelligent actions are performed by the controller 152, while the arc detection comparators simply perform a comparison function.
  • the arc detection comparators 158, 188, 194 may include their own internal processors and memories, enabling them to perform some of the functions in the process of FIGS. 7A AND 7B.
  • FIGS. 7A AND 7B involves frequent two-way communication between the controller 152 and each of the arc detection comparators 158, 188, 194.
  • the controller 152 periodically transmits updated comparison threshold values to particular ones of the comparators 158, 188, 194, different values being downloaded to different comparators.
  • the comparators 158, 188, 194 transmit arc flags whenever an arc is detected.
  • the arc flag includes the identity of the individual comparator that issued it.
  • the controller further transmits shutdown (ON/OFF) commands to the power generators 136, 140 and 148 in response to a valid arc flag from any of the arc detection comparators 158, 188, " 194. It is intended that the arc detection features of FIG.
  • IA (as implemented in the process of FIGS. 7A and 7B) be installed on plasma reactors already operating in the field.
  • IA (as implemented in the process of FIGS. 7A and 7B) be installed on plasma reactors already operating in the field.
  • For reactors already installed in the field installation onto each reactor of a custom communication network to meet each of the foregoing communication needs would be prohibitively costly.
  • To reduce costs, communication systems already existing on such reactors are exploited. In some cases, the existing communication systems are able to meet and facilitate all of the communication needs of the arc detection features of FIGS. 1 and 7.
  • a local area network in which the controller communicates via the LAN with every active device and sensor on the reactor.
  • FIG. 8 illustrates the structure of such a LAN in a reactor of the type depicted in FIG. IA.
  • an interface device is coupled to it.
  • the interface device converts received digital commands to actions that shut down the active device.
  • interface devices 355, 357, 359 are connected to respective power generators 136, 140, 148.
  • the interface devices are capable of shutting down the generators in response to received digital commands.
  • a local area network (LAN) 360 is provided.
  • the LAN is a multiple conductor communication channel or cable having multiple I/O ports 361, 362, 363, 364, 365, 366, 367, which may be implemented as multiconductor connectors.
  • Each device that is to communicate on the LAN 360 has a memory and limited processing capability that permits it to store and issue a unique address on the LAN 360.
  • each control interface 355, 357, 359 and each comparator 158, 188, 194 has conventional process circuitry that responds to LAN protocols and stores its own device address.
  • Each device 158, 188, 194, 355, 357, 359 on the LAN responds only to received communications that are addressed to its device address. Furthermore, each device attaches its device address to its data transmissions on the LAN.
  • Each of the devices 158, 188, 194, 355, 357, 359 is coupled to the LAN 360 at a unique one of the ports 361, 362, 363, 364, 365, 366, 367 via its own multiconductor cable 371, 372, 373, 374, 375, 376, 377, respectively.
  • the arc detection system communication features of FIG. IA are realized in such a reactor by identifying spare (unused) ports on the existing LAN 360 (e.g., the ports 363, 365 and 366) and connecting the comparators 158, 188, 194 to them in the manner depicted in FIG. 8.
  • the device addresses of all the devices on the LAN 360 may be intelligently assigned by the controller 152 upon activation of the LAN 360, using conventional techniques.
  • the controller 152 carries out the process of FIGS. 7A AND 7B by sending an individual communication addressed to an individual comparator with instructions to download a certain threshold value, for example.
  • Each comparator responds to an arc event by transmitting a communication addressed to the controller 152 and containing the comparator' s device address and a message signifying occurrence of an arc event.
  • the controller 152 can respond to a valid arc event by transmitting a communication addressed to each of the power generator control interfaces 355, 357, 359 containing a command to shut down the corresponding generator.
  • the location of the sensor that caused the arc flag to be issued is deduced by the controller 152 from the device address of the corresponding arc detect comparator.
  • the controller 152 can provide this information to the user at a user interface 153 of the controller 152.
  • DI/O digital input/output
  • each device communicates with the controller 152 (and vice versa) over a communication channel dedicated to that device.
  • the DI/O network on pre-existing reactors employs respective DI/O relays 401, 402, 404, 406 that individually communicate with the controller 152, and monitor individual safety points.
  • the DI/O relay 401 signals whenever a lid 101 of the chamber 100 is opened
  • the DI/O relay 402 signals whenever the RF power cable to the side wall coil is disconnected
  • the DI/O relay 404 signals whenever the RF bias power cable is disconnected
  • the DI/O relay 406 signals whenever the D. C. power cable to the ceiling target is disconnected.
  • the controller 152 receives the signals from these relays at inputs A, B, D, and F, as indicated in the drawing of FIG. 9.
  • the controller 152 transmits shutdown (ON/OFF) commands to each of the power generators 136, 148 and 140 via dedicated communication channels J, K and L, as indicated in FIG. 9.
  • the communication features of FIG. IA may be implemented in the DI/O network of FIG.
  • DI/O relays that can be spared for use with the arc detect comparators 158, 188 and 194.
  • pre-existing DI/O relays 403, 405 and 407 are appropriated for connection to the outputs of the arc detect comparators 188, 158 and 194, respectively.
  • the DI/O relay attached to it signals the controller 152.
  • the controller 152 deduces the identity of the arc detect comparator that issued the arc flag from the location of the wire or channel carrying the signal. This information may be furnished to the controller' s user interface 153 for use in managing consumable replacement.
  • arc detection system of FIG. IA may be implemented in a basic form by exploiting a 24 volt safety interrupt circuit provided on such reactors. This circuit ensures immediate shut down of the power generators whenever the chamber lid is opened or whenever a power cable connection to the chamber is interrupted.
  • the power generator 136 has an interlock 501
  • the power generator 148 has an interlock 502
  • the power generator 140 has an interlock 503.
  • Each generator 136, 148 and 140 can operate only if its interlock constantly senses a 24 Volt DC potential on a circuit conductor 504.
  • the circuit conductor 504 connects all of the interlocks 501, 502, 503 in series with a 24 VDC supply 506.
  • the series circuit conductor 504 is interrupted by several simple switch relays 510, 512, 514, 516, 518, 520 and 522. Therefore, each relay by itself can sever the series connection of the 24 volt supply 506 to the generator interlocks 501, 502, 503, thereby shutting down the reactor.
  • the relay 510 opens its connection whenever the chamber lid 101 is opened.
  • the relay 512 opens its connection whenever the RF power cable connection to the side wall coil 112 is interrupted.
  • the relay 516 opens its connection whenever the RF power cable to the ESC 122 is interrupted.
  • the relay 522 opens its connection whenever the RF power cable connection to the ceiling target is interrupted.
  • the chamber 100 may be automatically shut down in response to arc detection by any of the three arc detect comparators 158, 188 and 194 provided there are three spare relays connected in series along the circuit conductor 504 and available to accept the outputs of respective ones of the comparators 158, 188 and 194.
  • FIG. 10 shows that three such relays, namely the relays 514, 518 and 520, may be connected to the outputs of the comparators 188, 158 and 194, respectively.
  • any one of the comparators 188, 158, 194 senses a voltage (or current) exceeding its predetermined threshold, it issues an arc flag in the form of a voltage that causes the corresponding relay (514, 518 or 520, respectively) to open its connection. This interrupts the 24 volt circuit of the conductor 504, causing each of the interlocks 501, 502, 503 to disable the associated power generator (136, 148 and 140, respectively) .
  • the RF impedance match 138 illustrated in FIG. IA has a single RF input and an RF output
  • the RF impedance match 138 may have, in addition, a low power D. C. input (not shown in the drawings) .
  • an additional arc sensor and threshold comparator of the type described above may be coupled to the unillustrated low power D. C. input of the RF impedance match 138.
  • the reactor of FIGS. IA or IB has been described as detecting an arc based upon the output of a single one of the various sensors 154, 184, 190, etc.
  • the decision may instead be based upon the outputs of several (or possibly all) of the sensors.
  • the controller 152 of the embodiment of FIG. 1, 8 or 9 has been described as responding to an arc event based upon the output of any single one of the sensors 154, 184 or 190 through the corresponding comparator 158, 186 or 194, respectively.
  • the controller 152 of FIG. 1, 8 or 9 is programmed to combine the outputs of at least two (or more) of the threshold comparators 158, 186, and make a decision based upon the combined signals.
  • the output signals may be combined by the processor 152 through a linear, polynomial, or more complex mathematical function.
  • the controller 152 would be programmed to respond to the combined signal to determine whether an arc was detected or to determine whether to shut down the reactor.
  • the individual outputs of the sensors 154, 184, 190 may be combined before being processed by a threshold comparator.
  • the individual output signals from at least two of the sensors 154, 184, 190 may be combined through a linear, polynomial, or more complex mathematical function.
  • the resulting combined signal is then fed to a single comparator (e.g., the comparator 186) , and the output of that single comparator is fed to the controller 152.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne une détection d'arc de niveau de tranche qui est fournie dans un réacteur à plasma en utilisant un capteur de transitoire RF couplé à un comparateur de seuil, et un contrôleur de système sensible au comparateur de seuil.
PCT/US2008/009529 2007-08-15 2008-08-08 Appareil pour une détection d'arc de niveau de tranche à une correspondance d'impédance de polarisation rf vers l'électrode à piédestal Ceased WO2009023135A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/893,353 2007-08-15
US11/893,354 2007-08-15
US11/893,354 US7737702B2 (en) 2007-08-15 2007-08-15 Apparatus for wafer level arc detection at an electrostatic chuck electrode
US11/893,353 US7733095B2 (en) 2007-08-15 2007-08-15 Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode

Publications (1)

Publication Number Publication Date
WO2009023135A1 true WO2009023135A1 (fr) 2009-02-19

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PCT/US2008/009529 Ceased WO2009023135A1 (fr) 2007-08-15 2008-08-08 Appareil pour une détection d'arc de niveau de tranche à une correspondance d'impédance de polarisation rf vers l'électrode à piédestal

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WO (1) WO2009023135A1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US8440061B2 (en) * 2009-07-20 2013-05-14 Lam Research Corporation System and method for plasma arc detection, isolation and prevention
KR101303040B1 (ko) * 2012-02-28 2013-09-03 주식회사 뉴파워 프라즈마 플라즈마 챔버의 아크 검출 방법 및 장치
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
WO2018151920A1 (fr) * 2017-02-16 2018-08-23 Applied Materials, Inc. Sonde de courant-tension pour mesurer une puissance électrique radiofréquence dans un environnement à haute température et son procédé d'étalonnage
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
CN111788654B (zh) 2017-11-17 2023-04-14 先进工程解决方案全球控股私人有限公司 等离子体处理系统中的调制电源的改进应用
PL3711081T3 (pl) 2017-11-17 2024-08-19 Aes Global Holdings, Pte. Ltd. Przestrzenne i czasowe sterowanie napięciem polaryzacji jonów do przetwarzania plazmowego
EP4231328A1 (fr) 2017-11-17 2023-08-23 AES Global Holdings, Pte. Ltd. Pulsation synchronisée de la source de traitement par plasma et de la polarisation du substrat
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
TW202536923A (zh) 2019-07-12 2025-09-16 新加坡商Aes 全球公司 具有控制開關之偏壓供應器
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6190513B1 (en) * 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US20050236377A1 (en) * 2000-03-17 2005-10-27 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
JP2006237009A (ja) * 2005-02-24 2006-09-07 En Technology Inc プラズマ電源装置用アークエネルギー制御回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6190513B1 (en) * 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US20050236377A1 (en) * 2000-03-17 2005-10-27 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
JP2006237009A (ja) * 2005-02-24 2006-09-07 En Technology Inc プラズマ電源装置用アークエネルギー制御回路

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TW200915375A (en) 2009-04-01

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