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WO2009022429A1 - 基板洗浄装置および基板洗浄方法 - Google Patents

基板洗浄装置および基板洗浄方法 Download PDF

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Publication number
WO2009022429A1
WO2009022429A1 PCT/JP2007/065969 JP2007065969W WO2009022429A1 WO 2009022429 A1 WO2009022429 A1 WO 2009022429A1 JP 2007065969 W JP2007065969 W JP 2007065969W WO 2009022429 A1 WO2009022429 A1 WO 2009022429A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
cleaning
irradiation
concentration
ozone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/065969
Other languages
English (en)
French (fr)
Inventor
Yoshiaki Ikuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to PCT/JP2007/065969 priority Critical patent/WO2009022429A1/ja
Priority to KR1020097025399A priority patent/KR101353668B1/ko
Priority to JP2009528017A priority patent/JP5083318B2/ja
Priority to EP07792599A priority patent/EP2177278B1/en
Publication of WO2009022429A1 publication Critical patent/WO2009022429A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

　基板の洗浄面におけるＵＶ光の強度の増加、ならびにそれによるオゾンＯ3濃度および励起状態の酸素原子Ｏ（１Ｄ）濃度および活性酸素濃度の増加により、基板の洗浄面から有機系、金属系の異物を効果的に除去する基板洗浄方法ならびに基板洗浄装置を提供。 　ＵＶ光照射を用いる基板の洗浄方法であって、基板の洗浄をおこなう側の面（以下、洗浄面という）およびその近傍を含む第２の空間は、前記ＵＶ光の照射によりオゾン、励起状態の酸素原子、および活性酸素種のうち少なくともいずれか１種を発生するガス若しくは液からなる雰囲気とし、前記基板の他方の側の面（以下、照射面という）を含む第１の空間は、前記ＵＶ光の吸収が低いガスからなる雰囲気とし、前記ＵＶ光を、第１の空間を通して前記基板の照射面に入射させ、基板内を透過させて洗浄面に照射することを特徴とする基板の洗浄方法。
PCT/JP2007/065969 2007-08-16 2007-08-16 基板洗浄装置および基板洗浄方法 Ceased WO2009022429A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2007/065969 WO2009022429A1 (ja) 2007-08-16 2007-08-16 基板洗浄装置および基板洗浄方法
KR1020097025399A KR101353668B1 (ko) 2007-08-16 2007-08-16 기판 세정 장치 및 기판 세정 방법
JP2009528017A JP5083318B2 (ja) 2007-08-16 2007-08-16 基板洗浄装置および基板洗浄方法
EP07792599A EP2177278B1 (en) 2007-08-16 2007-08-16 Method of cleaning substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065969 WO2009022429A1 (ja) 2007-08-16 2007-08-16 基板洗浄装置および基板洗浄方法

Publications (1)

Publication Number Publication Date
WO2009022429A1 true WO2009022429A1 (ja) 2009-02-19

Family

ID=40350493

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/065969 Ceased WO2009022429A1 (ja) 2007-08-16 2007-08-16 基板洗浄装置および基板洗浄方法

Country Status (4)

Country Link
EP (1) EP2177278B1 (ja)
JP (1) JP5083318B2 (ja)
KR (1) KR101353668B1 (ja)
WO (1) WO2009022429A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015022150A (ja) * 2013-07-19 2015-02-02 信越化学工業株式会社 フォトマスク関連基板の洗浄方法及びフォトマスク関連基板の製造方法
WO2015037573A1 (ja) * 2013-09-13 2015-03-19 ウシオ電機株式会社 光照射装置
WO2015075922A1 (ja) * 2013-11-22 2015-05-28 野村マイクロ・サイエンス株式会社 紫外線透過性基板の洗浄装置及び洗浄方法
WO2015098387A1 (ja) * 2013-12-25 2015-07-02 ウシオ電機株式会社 光照射装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5586316B2 (ja) * 2010-05-06 2014-09-10 信越化学工業株式会社 Ｕｖオゾン洗浄装置
CN103406302B (zh) * 2013-08-23 2015-08-12 深圳市华星光电技术有限公司 基于紫外线的清洗方法及清洗装置
CN106238427B (zh) * 2015-12-21 2018-10-23 中国科学院长春光学精密机械与物理研究所 一种极紫外光学元件表面污染清洗装置及方法
KR102075685B1 (ko) * 2017-10-16 2020-02-11 세메스 주식회사 포토 마스크 세정 장치 및 포토 마스크 세정 방법
EP3586986B1 (de) * 2018-06-26 2024-09-04 Helmholtz-Zentrum für Umweltforschung GmbH-UFZ Vorrichtung und verfahren zur submolekularen trockenreinigung und/oder zur hydrophilisierung der oberfläche von festkörpern
KR102623544B1 (ko) 2019-06-10 2024-01-10 삼성전자주식회사 광 조사 기반 웨이퍼 세정 장치 및 그 세정 장치를 포함한 웨이퍼 세정 시스템
KR102288382B1 (ko) 2019-09-20 2021-08-11 대전대학교 산학협력단 플라즈마에칭공정상의 l-fc 제거 방법 및 그 시스템
JP2024025847A (ja) 2022-08-15 2024-02-28 ウシオ電機株式会社 光処理装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000070885A (ja) * 1998-09-01 2000-03-07 Ultla Clean Technology Kaihatsu Kenkyusho:Kk 基板洗浄装置及び基板洗浄方法
JP2001137800A (ja) 1999-08-05 2001-05-22 Hitachi Electronics Eng Co Ltd 基板処理装置及び処理方法
JP2002016033A (ja) 2000-06-29 2002-01-18 Tokyo Cathode Laboratory Co Ltd 基板ドライ洗浄装置及び基板ドライ洗浄方法
JP2002192089A (ja) 2000-12-25 2002-07-10 Nomura Micro Sci Co Ltd 洗浄方法
US6507031B1 (en) 1999-10-20 2003-01-14 Hoya-Schott Corporation Apparatus and method of irradiating ultraviolet light
JP2003344601A (ja) * 2002-05-28 2003-12-03 Canon Inc 光学素子の洗浄装置及び光学素子の洗浄方法、および光学素子の製造方法
JP2005334840A (ja) * 2004-05-31 2005-12-08 Toshiba Corp 光洗浄方法及び光洗浄装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012128A (ja) * 1983-06-30 1985-01-22 Anelva Corp 光化学的表面処理装置
JPS60129136A (ja) * 1983-12-15 1985-07-10 Toshiba Corp 紫外線照射装置
JPS60212226A (ja) * 1984-04-06 1985-10-24 Ushio Inc 紫外線処理方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000070885A (ja) * 1998-09-01 2000-03-07 Ultla Clean Technology Kaihatsu Kenkyusho:Kk 基板洗浄装置及び基板洗浄方法
JP2001137800A (ja) 1999-08-05 2001-05-22 Hitachi Electronics Eng Co Ltd 基板処理装置及び処理方法
US6507031B1 (en) 1999-10-20 2003-01-14 Hoya-Schott Corporation Apparatus and method of irradiating ultraviolet light
JP2002016033A (ja) 2000-06-29 2002-01-18 Tokyo Cathode Laboratory Co Ltd 基板ドライ洗浄装置及び基板ドライ洗浄方法
JP2002192089A (ja) 2000-12-25 2002-07-10 Nomura Micro Sci Co Ltd 洗浄方法
JP2003344601A (ja) * 2002-05-28 2003-12-03 Canon Inc 光学素子の洗浄装置及び光学素子の洗浄方法、および光学素子の製造方法
JP2005334840A (ja) * 2004-05-31 2005-12-08 Toshiba Corp 光洗浄方法及び光洗浄装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ENGINEERING INSTITUTE OF JAPAN, vol. 83, no. 5, pages 273
See also references of EP2177278A4 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015022150A (ja) * 2013-07-19 2015-02-02 信越化学工業株式会社 フォトマスク関連基板の洗浄方法及びフォトマスク関連基板の製造方法
WO2015037573A1 (ja) * 2013-09-13 2015-03-19 ウシオ電機株式会社 光照射装置
WO2015075922A1 (ja) * 2013-11-22 2015-05-28 野村マイクロ・サイエンス株式会社 紫外線透過性基板の洗浄装置及び洗浄方法
JPWO2015075922A1 (ja) * 2013-11-22 2017-03-16 野村マイクロ・サイエンス株式会社 紫外線透過性基板の洗浄装置及び洗浄方法
WO2015098387A1 (ja) * 2013-12-25 2015-07-02 ウシオ電機株式会社 光照射装置
JP2015120129A (ja) * 2013-12-25 2015-07-02 ウシオ電機株式会社 光照射装置

Also Published As

Publication number Publication date
KR101353668B1 (ko) 2014-01-20
EP2177278A4 (en) 2011-09-07
KR20100053485A (ko) 2010-05-20
EP2177278A1 (en) 2010-04-21
JPWO2009022429A1 (ja) 2010-11-11
JP5083318B2 (ja) 2012-11-28
EP2177278B1 (en) 2012-06-13

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