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WO2009014076A1 - 受光デバイス - Google Patents

受光デバイス Download PDF

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Publication number
WO2009014076A1
WO2009014076A1 PCT/JP2008/062986 JP2008062986W WO2009014076A1 WO 2009014076 A1 WO2009014076 A1 WO 2009014076A1 JP 2008062986 W JP2008062986 W JP 2008062986W WO 2009014076 A1 WO2009014076 A1 WO 2009014076A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
layer
superlattice
receiving
subsidence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062986
Other languages
English (en)
French (fr)
Inventor
Yasuhiro Iguchi
Hiroshi Okada
Yuichi Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Osaka Metropolitan University
Original Assignee
Sumitomo Electric Industries Ltd
Osaka Prefecture University PUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd, Osaka Prefecture University PUC filed Critical Sumitomo Electric Industries Ltd
Priority to US12/443,575 priority Critical patent/US8058642B2/en
Publication of WO2009014076A1 publication Critical patent/WO2009014076A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

　１．７μｍ～３．５μｍの近赤外から中赤外光を受光できるような受光素子デバイスを提供する。ＩｎＰを基板（２）とし、Ｉｎ、Ｇａ、Ａｓ、Ｎを含む３－５族化合物半導体の沈降層と、Ｇａ、Ａｓ、Ｓｂを含む３－５族化合物半導体の隆起層とを交互に積層し、タイプ２の接合を形成した超格子を超格子受光層（４）とする。沈降層、隆起層の膜厚は３ｎｍ～１０ｎｍで、超格子受光層（４）全体の厚みは２μｍ～７μｍで、超格子受光層（４）の構成膜のＩｎＰとの格子不整合は±０．２％以下とする。
PCT/JP2008/062986 2007-07-23 2008-07-18 受光デバイス Ceased WO2009014076A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/443,575 US8058642B2 (en) 2007-07-23 2008-07-18 Light-receiving device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-190281 2007-07-23
JP2007190281A JP5260909B2 (ja) 2007-07-23 2007-07-23 受光デバイス

Publications (1)

Publication Number Publication Date
WO2009014076A1 true WO2009014076A1 (ja) 2009-01-29

Family

ID=40281330

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062986 Ceased WO2009014076A1 (ja) 2007-07-23 2008-07-18 受光デバイス

Country Status (3)

Country Link
US (1) US8058642B2 (ja)
JP (1) JP5260909B2 (ja)
WO (1) WO2009014076A1 (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011027624A1 (ja) * 2009-09-07 2011-03-10 住友電気工業株式会社 Ｉｉｉ－ｖ族化合物半導体受光素子、ｉｉｉ－ｖ族化合物半導体受光素子を作製する方法、受光素子、及び、エピタキシャルウェハ
JP2011060853A (ja) * 2009-09-07 2011-03-24 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体受光素子、及びｉｉｉ−ｖ族化合物半導体受光素子を作製する方法
JP2011060855A (ja) * 2009-09-07 2011-03-24 Sumitomo Electric Ind Ltd 受光素子及びエピタキシャルウェハ
JP2011060792A (ja) * 2009-09-04 2011-03-24 Sumitomo Electric Ind Ltd 半導体素子の製造方法
EP2320464A1 (en) * 2009-11-04 2011-05-11 Sumitomo Electric Industries, Ltd. Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer
JP2011109146A (ja) * 2011-03-01 2011-06-02 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体受光素子
WO2013088762A1 (ja) * 2011-12-14 2013-06-20 住友電気工業株式会社 受光素子、その製造方法、光学装置
JP2013201465A (ja) * 2009-08-01 2013-10-03 Sumitomo Electric Ind Ltd 半導体素子およびその製造方法
JPWO2012046603A1 (ja) * 2010-10-06 2014-02-24 住友電気工業株式会社 受光素子、光学センサ装置および受光素子の製造方法
JP2014064009A (ja) * 2013-10-15 2014-04-10 Sumitomo Electric Ind Ltd 受光素子及びエピタキシャルウェハ
JP2014216624A (ja) * 2013-04-30 2014-11-17 住友電気工業株式会社 エピタキシャルウエハ、その製造方法、半導体素子、および光学センサ装置
JP2015043466A (ja) * 2014-12-01 2015-03-05 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体受光素子
CN110931593A (zh) * 2019-11-20 2020-03-27 电子科技大学中山学院 一种晶格匹配的硅基无砷化合物四结太阳电池

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5196160B2 (ja) * 2008-10-17 2013-05-15 日亜化学工業株式会社 半導体発光素子
JP5417850B2 (ja) * 2009-01-05 2014-02-19 住友電気工業株式会社 検出装置およびその製造方法
US8293628B2 (en) 2009-05-28 2012-10-23 Technion Research & Development Foundation Ltd. Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof
IL211339A (en) * 2010-02-21 2015-05-31 Technion Res & Dev Foundation Light detection and manufacturing method
JP5218476B2 (ja) * 2010-06-03 2013-06-26 住友電気工業株式会社 半導体素子、光学センサ装置および半導体素子の製造方法
JP2012015170A (ja) 2010-06-29 2012-01-19 Sumitomo Electric Ind Ltd 受光素子およびその製造方法
JP5736922B2 (ja) * 2011-04-08 2015-06-17 住友電気工業株式会社 受光素子およびその製造方法
IL220675B (en) * 2012-06-28 2019-10-31 Elta Systems Ltd Phototransistor device
JP6176105B2 (ja) * 2013-12-26 2017-08-09 住友電気工業株式会社 受光装置の製造方法
EP3761375A1 (en) 2014-02-05 2021-01-06 Array Photonics, Inc. Monolithic multijunction power converter
US9768339B2 (en) * 2015-06-22 2017-09-19 IQE, plc Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs
JP6593140B2 (ja) * 2015-12-09 2019-10-23 住友電気工業株式会社 フォトダイオード
WO2017189124A1 (en) * 2016-04-29 2017-11-02 Stc. Unm Wafer level gate modulation enhanced detectors
US10930808B2 (en) 2017-07-06 2021-02-23 Array Photonics, Inc. Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells
USD884660S1 (en) * 2017-09-27 2020-05-19 Hamamatsu Photonics K.K. Light-receiving device
WO2019067553A1 (en) 2017-09-27 2019-04-04 Solar Junction Corporation SHORT-LENGTH WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING DILUTED NITRIDE LAYER
JP1608528S (ja) * 2017-09-27 2018-07-09
CN110071185B (zh) * 2018-01-23 2022-08-02 中国科学院物理研究所 多量子阱红外探测器
US10636932B2 (en) * 2018-05-21 2020-04-28 Epistar Corporation Sensing apparatus
US10401543B1 (en) * 2018-09-05 2019-09-03 National Central University Type-II hybrid absorber photodetector
EP3939085A1 (en) 2019-03-11 2022-01-19 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
GB2592906B (en) * 2020-01-31 2024-01-10 Smart Photonics Holding B V Structure for a photonic integrated circuit
JP7658259B2 (ja) * 2021-12-02 2025-04-08 住友電気工業株式会社 半導体積層体および発光素子

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160429A (ja) * 1991-12-09 1993-06-25 Nec Corp 赤外線検知器
JPH06196745A (ja) * 1992-12-24 1994-07-15 Nec Corp 赤外線検出器
JP2003142783A (ja) * 2001-11-08 2003-05-16 Hitachi Ltd 半導体レーザおよびそれを用いた光モジュール
JP2005260118A (ja) * 2004-03-15 2005-09-22 Sumitomo Electric Ind Ltd 受光素子およびその製造方法
JP2006270060A (ja) * 2005-02-23 2006-10-05 Sumitomo Electric Ind Ltd 受光素子と受光素子を用いた光通信用受信モジュールおよび受光素子を用いた計測器
JP2007324572A (ja) * 2006-05-02 2007-12-13 Sumitomo Electric Ind Ltd 受光素子アレイ、その製造方法、および光計測システム

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09219563A (ja) 1996-02-09 1997-08-19 Hitachi Ltd 半導体光素子とそれを用いた応用システム
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US6252287B1 (en) * 1999-05-19 2001-06-26 Sandia Corporation InGaAsN/GaAs heterojunction for multi-junction solar cells
JP2003282927A (ja) 2002-03-25 2003-10-03 Yokogawa Electric Corp フォトダイオード
US7635879B2 (en) * 2004-09-30 2009-12-22 The United States Of America As Represented By The Secretary Of The Navy InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160429A (ja) * 1991-12-09 1993-06-25 Nec Corp 赤外線検知器
JPH06196745A (ja) * 1992-12-24 1994-07-15 Nec Corp 赤外線検出器
JP2003142783A (ja) * 2001-11-08 2003-05-16 Hitachi Ltd 半導体レーザおよびそれを用いた光モジュール
JP2005260118A (ja) * 2004-03-15 2005-09-22 Sumitomo Electric Ind Ltd 受光素子およびその製造方法
JP2006270060A (ja) * 2005-02-23 2006-10-05 Sumitomo Electric Ind Ltd 受光素子と受光素子を用いた光通信用受信モジュールおよび受光素子を用いた計測器
JP2007324572A (ja) * 2006-05-02 2007-12-13 Sumitomo Electric Ind Ltd 受光素子アレイ、その製造方法、および光計測システム

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013201465A (ja) * 2009-08-01 2013-10-03 Sumitomo Electric Ind Ltd 半導体素子およびその製造方法
JP2011060792A (ja) * 2009-09-04 2011-03-24 Sumitomo Electric Ind Ltd 半導体素子の製造方法
CN103426966A (zh) * 2009-09-07 2013-12-04 住友电气工业株式会社 受光元件
JP2011060853A (ja) * 2009-09-07 2011-03-24 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体受光素子、及びｉｉｉ−ｖ族化合物半導体受光素子を作製する方法
JP2011060855A (ja) * 2009-09-07 2011-03-24 Sumitomo Electric Ind Ltd 受光素子及びエピタキシャルウェハ
WO2011027624A1 (ja) * 2009-09-07 2011-03-10 住友電気工業株式会社 Ｉｉｉ－ｖ族化合物半導体受光素子、ｉｉｉ－ｖ族化合物半導体受光素子を作製する方法、受光素子、及び、エピタキシャルウェハ
US9159853B2 (en) 2009-09-07 2015-10-13 Sumitomo Electric Industries, Ltd. Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer
US8866199B2 (en) 2009-09-07 2014-10-21 Sumitomo Electric Industries, Ltd. Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer
EP2320464A1 (en) * 2009-11-04 2011-05-11 Sumitomo Electric Industries, Ltd. Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer
JPWO2012046603A1 (ja) * 2010-10-06 2014-02-24 住友電気工業株式会社 受光素子、光学センサ装置および受光素子の製造方法
US9190544B2 (en) 2010-10-06 2015-11-17 Sumitomo Electric Industries, Ltd. Photodiode, optical sensor device, and photodiode manufacturing method
JP2011109146A (ja) * 2011-03-01 2011-06-02 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体受光素子
WO2013088762A1 (ja) * 2011-12-14 2013-06-20 住友電気工業株式会社 受光素子、その製造方法、光学装置
JP2014216624A (ja) * 2013-04-30 2014-11-17 住友電気工業株式会社 エピタキシャルウエハ、その製造方法、半導体素子、および光学センサ装置
US9698287B2 (en) 2013-04-30 2017-07-04 Sumitomo Electric Industries, Ltd. Epitaxial wafer, method for producing the same, semiconductor element, and optical sensor device
JP2014064009A (ja) * 2013-10-15 2014-04-10 Sumitomo Electric Ind Ltd 受光素子及びエピタキシャルウェハ
JP2015043466A (ja) * 2014-12-01 2015-03-05 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体受光素子
CN110931593A (zh) * 2019-11-20 2020-03-27 电子科技大学中山学院 一种晶格匹配的硅基无砷化合物四结太阳电池

Also Published As

Publication number Publication date
JP2009027049A (ja) 2009-02-05
JP5260909B2 (ja) 2013-08-14
US8058642B2 (en) 2011-11-15
US20100072457A1 (en) 2010-03-25

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