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WO2009011364A1 - 電子線、ｘ線またはｅｕｖ光を用いたリソグラフィー法に用いられるレジスト組成物 - Google Patents

電子線、ｘ線またはｅｕｖ光を用いたリソグラフィー法に用いられるレジスト組成物 Download PDF

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Publication number
WO2009011364A1
WO2009011364A1 PCT/JP2008/062847 JP2008062847W WO2009011364A1 WO 2009011364 A1 WO2009011364 A1 WO 2009011364A1 JP 2008062847 W JP2008062847 W JP 2008062847W WO 2009011364 A1 WO2009011364 A1 WO 2009011364A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
ray
electron beam
resist composition
composition used
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062847
Other languages
English (en)
French (fr)
Inventor
Takashi Sasaki
Masanori Sawaguchi
Osamu Yokokoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP2009523660A priority Critical patent/JPWO2009011364A1/ja
Publication of WO2009011364A1 publication Critical patent/WO2009011364A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)

Abstract

　電子線、Ｘ線またはＥＵＶ光を用いたリソグラフィー法に用いられるレジスト組成物を提供する。 　主鎖に結合したフッ素原子または含フッ素アルキル基を有し、側鎖に芳香族環構造を有する繰り返し単位（Ｆ）を含む酸の作用によりアルカリ溶解性が増大する含フッ素重合体（ＰＦ）と、酸発生剤とを含む、電子線、Ｘ線またはＥＵＶ光を用いたリソグラフィー法に用いられるレジスト組成物。たとえば、前記繰り返し単位（Ｆ）は、下記繰り返し単位（ＦＶ１）、（ＦＶ２）、（ＦＶ３）および（ＦＶ４）からなる群から選ばれる少なくとも１種の繰り返し単位（ＦＶｎ）である（ＸＦ１は－Ｆまたは－ＣＦ３を、ｒ１およびｒ２はそれぞれ独立に０～２の整数（ｒ１とｒ２の和は１～３の整数である。）を、ＹＦはアルキル基、アルコキシアルキル基、アルキルカルボニル基およびアルコキシカルボニルアルキル基からなる群から選ばれる、フッ素原子を有していてもよい炭素数１～２０の基、ＷＦはアルキル基、アルコキシアルキル基およびアルコキシカルボニルアルキル基からなる群から選ばれる、フッ素原子を有していてもよい炭素数１～２０の基、を示す。）。
PCT/JP2008/062847 2007-07-18 2008-07-16 電子線、ｘ線またはｅｕｖ光を用いたリソグラフィー法に用いられるレジスト組成物 Ceased WO2009011364A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009523660A JPWO2009011364A1 (ja) 2007-07-18 2008-07-16 電子線、ｘ線またはｅｕｖ光を用いたリソグラフィー法に用いられるレジスト組成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-187462 2007-07-18
JP2007187462 2007-07-18

Publications (1)

Publication Number Publication Date
WO2009011364A1 true WO2009011364A1 (ja) 2009-01-22

Family

ID=40259696

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062847 Ceased WO2009011364A1 (ja) 2007-07-18 2008-07-16 電子線、ｘ線またはｅｕｖ光を用いたリソグラフィー法に用いられるレジスト組成物

Country Status (3)

Country Link
JP (1) JPWO2009011364A1 (ja)
TW (1) TW200921279A (ja)
WO (1) WO2009011364A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9182662B2 (en) 2012-02-15 2015-11-10 Rohm And Haas Electronic Materials Llc Photosensitive copolymer, photoresist comprising the copolymer, and articles formed therefrom

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05502034A (ja) * 1990-04-26 1993-04-15 ヘキスト・アクチェンゲゼルシャフト α―フルオロスチレン類の製造方法
JP2002311588A (ja) * 2001-04-11 2002-10-23 Matsushita Electric Ind Co Ltd パターン形成材料及びパターン形成方法
JP2003344994A (ja) * 2002-05-28 2003-12-03 Fuji Photo Film Co Ltd 感光性樹脂組成物
JP2004012898A (ja) * 2002-06-07 2004-01-15 Fuji Photo Film Co Ltd 感光性樹脂組成物
JP2004029136A (ja) * 2002-06-21 2004-01-29 Fuji Photo Film Co Ltd 感光性樹脂組成物
JP2004318115A (ja) * 2003-03-31 2004-11-11 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05502034A (ja) * 1990-04-26 1993-04-15 ヘキスト・アクチェンゲゼルシャフト α―フルオロスチレン類の製造方法
JP2002311588A (ja) * 2001-04-11 2002-10-23 Matsushita Electric Ind Co Ltd パターン形成材料及びパターン形成方法
JP2003344994A (ja) * 2002-05-28 2003-12-03 Fuji Photo Film Co Ltd 感光性樹脂組成物
JP2004012898A (ja) * 2002-06-07 2004-01-15 Fuji Photo Film Co Ltd 感光性樹脂組成物
JP2004029136A (ja) * 2002-06-21 2004-01-29 Fuji Photo Film Co Ltd 感光性樹脂組成物
JP2004318115A (ja) * 2003-03-31 2004-11-11 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9182662B2 (en) 2012-02-15 2015-11-10 Rohm And Haas Electronic Materials Llc Photosensitive copolymer, photoresist comprising the copolymer, and articles formed therefrom

Also Published As

Publication number Publication date
JPWO2009011364A1 (ja) 2010-09-24
TW200921279A (en) 2009-05-16

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