[go: up one dir, main page]

WO2009011289A1 - ポジ型レジスト組成物およびそれを用いたパターン形成方法 - Google Patents

ポジ型レジスト組成物およびそれを用いたパターン形成方法 Download PDF

Info

Publication number
WO2009011289A1
WO2009011289A1 PCT/JP2008/062524 JP2008062524W WO2009011289A1 WO 2009011289 A1 WO2009011289 A1 WO 2009011289A1 JP 2008062524 W JP2008062524 W JP 2008062524W WO 2009011289 A1 WO2009011289 A1 WO 2009011289A1
Authority
WO
WIPO (PCT)
Prior art keywords
positive
resist composition
working resist
pattern formation
working
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062524
Other languages
English (en)
French (fr)
Inventor
Takayuki Kato
Akinori Shibuya
Yusuke Iiduka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to US12/668,674 priority Critical patent/US7955780B2/en
Publication of WO2009011289A1 publication Critical patent/WO2009011289A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1806—C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1807—C7-(meth)acrylate, e.g. heptyl (meth)acrylate or benzyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1808—C8-(meth)acrylate, e.g. isooctyl (meth)acrylate or 2-ethylhexyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1809—C9-(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1812—C12-(meth)acrylate, e.g. lauryl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1818—C13or longer chain (meth)acrylate, e.g. stearyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

　高分子主鎖に特定の酸分解性構造を有し、さらに側鎖に特定の酸分解性基を複数種含む樹脂を用いた、高次のレベルで露光ラチチュード、フォーカス余裕度、パターン倒れ性を両立させ、さらには現像欠陥を低減したポジ型レジスト組成物及びパターン形成方法が提供される。
PCT/JP2008/062524 2007-07-13 2008-07-10 ポジ型レジスト組成物およびそれを用いたパターン形成方法 Ceased WO2009011289A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/668,674 US7955780B2 (en) 2007-07-13 2008-07-10 Positive resist composition and pattern forming method using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-184394 2007-07-13
JP2007184394 2007-07-13

Publications (1)

Publication Number Publication Date
WO2009011289A1 true WO2009011289A1 (ja) 2009-01-22

Family

ID=40259624

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062524 Ceased WO2009011289A1 (ja) 2007-07-13 2008-07-10 ポジ型レジスト組成物およびそれを用いたパターン形成方法

Country Status (4)

Country Link
US (1) US7955780B2 (ja)
JP (1) JP4505522B2 (ja)
KR (1) KR20100028101A (ja)
WO (1) WO2009011289A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018024852A (ja) * 2016-07-29 2018-02-15 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8252503B2 (en) * 2007-08-24 2012-08-28 Az Electronic Materials Usa Corp. Photoresist compositions
JP5277039B2 (ja) * 2009-03-30 2013-08-28 富士フイルム株式会社 平版印刷版原版およびその製版方法
JP5645459B2 (ja) * 2009-07-10 2014-12-24 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法
JP5608492B2 (ja) * 2009-09-18 2014-10-15 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JPWO2011111641A1 (ja) * 2010-03-09 2013-06-27 Jsr株式会社 感放射線性樹脂組成物
JP2012022212A (ja) * 2010-07-15 2012-02-02 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターン形成方法、新規な化合物、および酸発生剤
KR20130114095A (ko) * 2010-09-17 2013-10-16 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 중합체 및 레지스트 패턴 형성 방법
US8597869B2 (en) * 2010-10-25 2013-12-03 Shin-Etsu Chemical Co., Ltd. Sulfonium salt, resist composition, and patterning process
JP6144005B2 (ja) * 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
US9081280B2 (en) 2011-02-24 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist having improved extreme-ultraviolet lithography imaging performance
JP5933339B2 (ja) * 2012-05-23 2016-06-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP2014074830A (ja) * 2012-10-05 2014-04-24 Mitsubishi Rayon Co Ltd リソグラフィー用重合体の製造方法、レジスト組成物の製造方法、およびパターンが形成された基板の製造方法
KR101400390B1 (ko) * 2013-02-08 2014-05-30 엘지디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 유기전계발광표시장치의 제조방법
JP6665528B2 (ja) * 2015-12-25 2020-03-13 Jsr株式会社 感放射線性樹脂組成物、硬化膜、その形成方法、及び表示素子
JP7249095B2 (ja) * 2016-04-04 2023-03-30 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP7249094B2 (ja) * 2016-04-04 2023-03-30 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP7059515B2 (ja) * 2016-04-04 2022-04-26 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP6667361B2 (ja) * 2016-05-06 2020-03-18 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物
JP7056024B2 (ja) * 2016-07-29 2022-04-19 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP6845050B2 (ja) * 2017-03-10 2021-03-17 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物、鋳型付き基板の製造方法、及びめっき造形物の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11119434A (ja) * 1997-10-09 1999-04-30 Fujitsu Ltd レジスト材料及びレジストパターンの形成方法
JP2004334156A (ja) * 2002-08-29 2004-11-25 Jsr Corp 感放射線性樹脂組成物
WO2005085301A1 (ja) * 2004-03-08 2005-09-15 Mitsubishi Rayon Co., Ltd. レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物
JP2006091762A (ja) * 2004-09-27 2006-04-06 Maruzen Petrochem Co Ltd ポジ型感光性樹脂及び新規ジチオール化合物
JP2006249225A (ja) * 2005-03-10 2006-09-21 Maruzen Petrochem Co Ltd ポジ型感光性樹脂、その製造方法及びポジ型感光性樹脂を含むレジスト組成物

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3796560B2 (ja) 1999-01-27 2006-07-12 信越化学工業株式会社 化学増幅ポジ型レジスト組成物及びパターン形成方法
KR100647379B1 (ko) 1999-07-30 2006-11-17 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
JP3803286B2 (ja) 2001-12-03 2006-08-02 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法
JP2003223001A (ja) 2002-01-31 2003-08-08 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP4327003B2 (ja) 2003-07-01 2009-09-09 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
EP1505439A3 (en) * 2003-07-24 2005-04-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition and method of forming resist pattern
JP4861767B2 (ja) * 2005-07-26 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
TWI403843B (zh) * 2005-09-13 2013-08-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
JP4568668B2 (ja) * 2005-09-22 2010-10-27 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4881687B2 (ja) * 2005-12-09 2012-02-22 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI479266B (zh) * 2005-12-27 2015-04-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
JP5114021B2 (ja) * 2006-01-23 2013-01-09 富士フイルム株式会社 パターン形成方法
KR101242332B1 (ko) * 2006-10-17 2013-03-12 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 이것을 이용한 패턴 형성 방법
US7569326B2 (en) * 2006-10-27 2009-08-04 Shin-Etsu Chemical Co., Ltd. Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11119434A (ja) * 1997-10-09 1999-04-30 Fujitsu Ltd レジスト材料及びレジストパターンの形成方法
JP2004334156A (ja) * 2002-08-29 2004-11-25 Jsr Corp 感放射線性樹脂組成物
WO2005085301A1 (ja) * 2004-03-08 2005-09-15 Mitsubishi Rayon Co., Ltd. レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物
JP2006091762A (ja) * 2004-09-27 2006-04-06 Maruzen Petrochem Co Ltd ポジ型感光性樹脂及び新規ジチオール化合物
JP2006249225A (ja) * 2005-03-10 2006-09-21 Maruzen Petrochem Co Ltd ポジ型感光性樹脂、その製造方法及びポジ型感光性樹脂を含むレジスト組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018024852A (ja) * 2016-07-29 2018-02-15 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法

Also Published As

Publication number Publication date
US20100203451A1 (en) 2010-08-12
JP2009042748A (ja) 2009-02-26
KR20100028101A (ko) 2010-03-11
US7955780B2 (en) 2011-06-07
JP4505522B2 (ja) 2010-07-21

Similar Documents

Publication Publication Date Title
WO2009011289A1 (ja) ポジ型レジスト組成物およびそれを用いたパターン形成方法
EP1717261A4 (en) POLYMER COMPOUND, PHOTORESISTIC COMPOSITION WITH SUCH A POLYMER COMPOUND AND METHOD FOR FORMING A RESISTANCE STRUCTURE
EP2123687A4 (en) CONJUGATED DIOLEFIN COPOLYMER RUBBER, METHOD FOR PRODUCING THE SAME, RUBBER COMPOSITION, AND TIRE
EP2332143A4 (en) STEP-BY-STEP DEVICE AND REPAIR
TW200700901A (en) Photo-sensitive resin composition
EP2309332A4 (en) POSITIVE TYPE SENSITIVE SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD
EP1698937A3 (en) Positive resist composition and pattern-forming method using the same
WO2008055236A3 (en) Mapk/erk kinase inhibitors
WO2011061501A3 (en) Methanofullerene derivatives, photoresist composition containing it and method for forming a resist layer
TW200643623A (en) Antireflective hardmask composition and methods for using same
WO2008024640A3 (en) Biodegradable elastomeric scaffolds containing microintegrated cells
EP2521941A4 (en) Pattern Forming Device, Sensitive Resin Compound and Resist Film Versus Actinic Radiation or Radiation
EP3919980A4 (en) ACTIVE PHOTOSENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERNING METHOD AND METHOD OF MAKING AN ELECTRONIC DEVICE
IL217702A0 (en) Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same
GB0623108D0 (en) A printable composition
AR060693A1 (es) Metodos para hacer resinas poliester en reactores de policondensacion en estado fundido de pelicula descendente
BRPI0813437A2 (pt) Composto, composição, e métodos para inibir uma resposta de etileno em uma planta, e para prolongar a vida de uma planta paisagística.
WO2008082942A3 (en) High-z structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levels
FR2905690B1 (fr) Procede de fabrication d'un dispositif microfluidique.
WO2008140553A3 (en) Mapk/erk kinase inhibitors
EP2545412A4 (en) AGAINST ACTIVE RADIATION SENSITIVE OR BZW. RADIATION-SENSITIVE RESIN COMPOSITION, RESISTIVE FILM THEREFOR AND STRUCTURE-FORMING PROCESS THEREFOR
WO2012081863A3 (ko) 감광성 고분자, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 레지스트 패턴 형성방법
EP1635218A3 (en) Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition
WO2007117808A3 (en) Method of forming nanoscale features using soft lithography
EP1975712A3 (en) Positive resist composition and pattern forming method using the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08791072

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20107000605

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12668674

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08791072

Country of ref document: EP

Kind code of ref document: A1