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WO2009011164A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2009011164A1
WO2009011164A1 PCT/JP2008/059221 JP2008059221W WO2009011164A1 WO 2009011164 A1 WO2009011164 A1 WO 2009011164A1 JP 2008059221 W JP2008059221 W JP 2008059221W WO 2009011164 A1 WO2009011164 A1 WO 2009011164A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
interlayer insulating
etching stopper
etching
etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/059221
Other languages
English (en)
French (fr)
Inventor
Koshiro Koizumi
Hitoshi Seshimo
Hideo Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to US12/663,737 priority Critical patent/US20100176463A1/en
Priority to JP2009523564A priority patent/JPWO2009011164A1/ja
Publication of WO2009011164A1 publication Critical patent/WO2009011164A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Pressure Sensors (AREA)

Abstract

　加工寸法精度良くドライエッチング法とウエットエッチング法とを組み合わせたエッチング工程を実施できる技術を提供するために、センサ膜１２上に層間絶縁膜１３、エッチングストッパ膜１４、層間絶縁膜１５、１８および表面保護膜１９を順次成膜する。エッチングストッパ膜１４としては、層間絶縁膜１３、１５、１８とエッチング選択比が異なる材料を選択する。次いで、エッチングストッパ膜１４をエッチングストッパとして表面保護膜１９および層間絶縁膜１８、１５を順次ドライエッチングし、続いて層間絶縁膜１３をエッチングストッパとしてエッチングストッパ膜１４をドライエッチングする。その後、センサ膜１２をエッチングストッパとして層間絶縁膜１３をウエットエッチングする。
PCT/JP2008/059221 2007-07-19 2008-05-20 半導体装置およびその製造方法 Ceased WO2009011164A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/663,737 US20100176463A1 (en) 2007-07-19 2008-05-20 Semiconductor device and manufacturing method of the same
JP2009523564A JPWO2009011164A1 (ja) 2007-07-19 2008-05-20 半導体装置およびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-188083 2007-07-19
JP2007188083 2007-07-19

Publications (1)

Publication Number Publication Date
WO2009011164A1 true WO2009011164A1 (ja) 2009-01-22

Family

ID=40259507

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059221 Ceased WO2009011164A1 (ja) 2007-07-19 2008-05-20 半導体装置およびその製造方法

Country Status (3)

Country Link
US (1) US20100176463A1 (ja)
JP (1) JPWO2009011164A1 (ja)
WO (1) WO2009011164A1 (ja)

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EP4134667B1 (en) 2006-12-14 2025-11-12 Life Technologies Corporation Apparatus for measuring analytes using fet arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
EP2588851B1 (en) 2010-06-30 2016-12-21 Life Technologies Corporation Ion-sensing charge-accumulation circuit and method
EP2588850B1 (en) 2010-06-30 2016-12-28 Life Technologies Corporation Method for dry testing isfet arrays
EP2589084B1 (en) 2010-06-30 2016-11-16 Life Technologies Corporation Transistor circuits for detection and measurement of chemical reactions and compounds
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
EP2589065B1 (en) 2010-07-03 2015-08-19 Life Technologies Corporation Chemically sensitive sensor with lightly doped drains
EP2617061B1 (en) 2010-09-15 2021-06-30 Life Technologies Corporation Methods and apparatus for measuring analytes
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
GB2508582A (en) * 2012-10-12 2014-06-11 Dna Electronics Ltd ISFET with Titanium Nitride layer
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
EP2762865A1 (en) * 2013-01-31 2014-08-06 Sensirion Holding AG Chemical sensor and method for manufacturing such a chemical sensor
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
WO2014149780A1 (en) * 2013-03-15 2014-09-25 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US20140264471A1 (en) 2013-03-15 2014-09-18 Life Technologies Corporation Chemical device with thin conductive element
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
JP5692331B2 (ja) * 2013-10-18 2015-04-01 セイコーエプソン株式会社 センサ素子及び半導体装置の製造方法
US20160054312A1 (en) 2014-04-28 2016-02-25 Nanomedical Diagnostics, Inc. Chemically differentiated sensor array
US11782057B2 (en) 2014-12-18 2023-10-10 Cardea Bio, Inc. Ic with graphene fet sensor array patterned in layers above circuitry formed in a silicon based cmos wafer
US9618474B2 (en) 2014-12-18 2017-04-11 Edico Genome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
US10006910B2 (en) 2014-12-18 2018-06-26 Agilome, Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US10020300B2 (en) 2014-12-18 2018-07-10 Agilome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US12298301B2 (en) 2014-12-18 2025-05-13 Cardea Bio, Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
EP3234576B1 (en) 2014-12-18 2023-11-22 Life Technologies Corporation High data rate integrated circuit with transmitter configuration
EP3235010A4 (en) 2014-12-18 2018-08-29 Agilome, Inc. Chemically-sensitive field effect transistor
US11921112B2 (en) 2014-12-18 2024-03-05 Paragraf Usa Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
EP3308153A4 (en) * 2015-06-14 2019-02-20 Agilome, Inc. GRAPH-FET DEVICES, SYSTEMS AND METHOD FOR USE THEREOF FOR THE SEQUENCING OF NUCLEIC ACIDS
CN107923869B (zh) * 2015-08-25 2021-10-08 生命技术公司 深微阱设计及其制造方法
US10811539B2 (en) 2016-05-16 2020-10-20 Nanomedical Diagnostics, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
CN111293041B (zh) * 2018-12-06 2024-07-23 东京毅力科创株式会社 蚀刻处理方法和基板处理装置

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JPH1080145A (ja) * 1996-09-03 1998-03-24 Hitachi Ltd 共振型電力変換装置
JP2007017312A (ja) * 2005-07-08 2007-01-25 Hitachi Ltd 半導体ガスセンサとその製造方法

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Patent Citations (2)

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JPH1080145A (ja) * 1996-09-03 1998-03-24 Hitachi Ltd 共振型電力変換装置
JP2007017312A (ja) * 2005-07-08 2007-01-25 Hitachi Ltd 半導体ガスセンサとその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017045964A (ja) * 2015-08-28 2017-03-02 ラピスセミコンダクタ株式会社 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
US20100176463A1 (en) 2010-07-15
JPWO2009011164A1 (ja) 2010-09-16

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