[go: up one dir, main page]

WO2009008416A1 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

Info

Publication number
WO2009008416A1
WO2009008416A1 PCT/JP2008/062313 JP2008062313W WO2009008416A1 WO 2009008416 A1 WO2009008416 A1 WO 2009008416A1 JP 2008062313 W JP2008062313 W JP 2008062313W WO 2009008416 A1 WO2009008416 A1 WO 2009008416A1
Authority
WO
WIPO (PCT)
Prior art keywords
emitting device
semiconductor light
substrate
hole
arranged closer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062313
Other languages
English (en)
French (fr)
Inventor
Hideyuki Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/668,554 priority Critical patent/US8847255B2/en
Priority to CN2008800240741A priority patent/CN101743647B/zh
Priority to KR1020107001098A priority patent/KR101139567B1/ko
Publication of WO2009008416A1 publication Critical patent/WO2009008416A1/ja
Anticipated expiration legal-status Critical
Priority to US14/477,461 priority patent/US9093358B2/en
Priority to US14/792,074 priority patent/US9543477B2/en
Priority to US15/374,644 priority patent/US9899356B2/en
Priority to US15/865,505 priority patent/US10381331B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

　半導体発光装置（Ａ）は、貫通孔（１１）が形成された長状の基板（１）と、上記基板（１）の主面に搭載された第１、第２および第３半導体発光素子（３Ｒ，３Ｇ，３Ｂ）と、上記第１半導体発光素子（３Ｒ）に導通するとともに、上記貫通孔（１１）を介して上記基板（１）の裏面まで延びる電極（２Ｒ）とを備える。上記第１半導体発光素子（３Ｒ）および上記貫通孔（１１）は、上記基板（１）の長手方向において、上記第２半導体発光素子（３Ｇ）および上記第３半導体発光素子（３Ｂ）の間に位置している。上記第２半導体発光素子（３Ｇ）は、上記基板（１）の一方の端部寄りに設けられており、上記第３半導体発光素子（３Ｂ）は、上記基板（１）の他方の端部寄りに設けられている。
PCT/JP2008/062313 2007-07-12 2008-07-08 半導体発光装置 Ceased WO2009008416A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US12/668,554 US8847255B2 (en) 2007-07-12 2008-07-08 Semiconductor light-emitting device
CN2008800240741A CN101743647B (zh) 2007-07-12 2008-07-08 半导体发光装置
KR1020107001098A KR101139567B1 (ko) 2007-07-12 2008-07-08 반도체 발광 장치
US14/477,461 US9093358B2 (en) 2007-07-12 2014-09-04 Semiconductor light-emitting device
US14/792,074 US9543477B2 (en) 2007-07-12 2015-07-06 Semiconductor light-emitting device
US15/374,644 US9899356B2 (en) 2007-07-12 2016-12-09 Semiconductor light-emitting device
US15/865,505 US10381331B2 (en) 2007-07-12 2018-01-09 Semiconductor light-emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-183218 2007-07-12
JP2007183218A JP5161504B2 (ja) 2007-07-12 2007-07-12 半導体発光装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/668,554 A-371-Of-International US8847255B2 (en) 2007-07-12 2008-07-08 Semiconductor light-emitting device
US14/477,461 Continuation US9093358B2 (en) 2007-07-12 2014-09-04 Semiconductor light-emitting device

Publications (1)

Publication Number Publication Date
WO2009008416A1 true WO2009008416A1 (ja) 2009-01-15

Family

ID=40228586

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062313 Ceased WO2009008416A1 (ja) 2007-07-12 2008-07-08 半導体発光装置

Country Status (6)

Country Link
US (5) US8847255B2 (ja)
JP (1) JP5161504B2 (ja)
KR (1) KR101139567B1 (ja)
CN (1) CN101743647B (ja)
TW (1) TWI381550B (ja)
WO (1) WO2009008416A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5161504B2 (ja) 2007-07-12 2013-03-13 ローム株式会社 半導体発光装置
JP5507330B2 (ja) 2010-04-27 2014-05-28 ローム株式会社 Ｌｅｄモジュール
JP5748496B2 (ja) 2011-02-10 2015-07-15 ローム株式会社 Ｌｅｄモジュール
JP2013026510A (ja) 2011-07-22 2013-02-04 Rohm Co Ltd Ｌｅｄモジュールおよびｌｅｄモジュールの実装構造
DE102013114345A1 (de) * 2013-12-18 2015-06-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
JP6576094B2 (ja) 2014-06-16 2019-09-18 シチズン電子株式会社 Ｌｅｄ発光装置
TWI556478B (zh) * 2014-06-30 2016-11-01 億光電子工業股份有限公司 發光二極體裝置
JP6575065B2 (ja) * 2014-12-26 2019-09-18 日亜化学工業株式会社 発光装置
CN105552070A (zh) * 2015-12-10 2016-05-04 江苏稳润光电有限公司 一种全彩贴片指示led
CN116031350A (zh) 2017-04-28 2023-04-28 日亚化学工业株式会社 发光装置
EP3503225B1 (en) 2017-12-22 2021-04-07 Nichia Corporation Light emitting device
JP7588547B2 (ja) * 2021-04-16 2024-11-22 スタンレー電気株式会社 半導体発光装置
CN116504906B (zh) * 2023-06-29 2023-10-27 厦门普为光电科技有限公司 高光效发光二极管光源

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003204081A (ja) * 2002-01-08 2003-07-18 Rohm Co Ltd 半導体発光装置
JP2006210734A (ja) * 2005-01-28 2006-08-10 Sanyo Electric Co Ltd 発光装置
JP2006222382A (ja) * 2005-02-14 2006-08-24 Nichia Chem Ind Ltd 半導体装置及び半導体装置の形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000244020A (ja) * 1999-02-23 2000-09-08 Matsushita Electric Works Ltd 光源装置
EP1096431A1 (en) 1999-10-27 2001-05-02 Sony International (Europe) GmbH Reservation system and mobile terminal for the reservation of queuing numbers
JP2003017753A (ja) * 2001-07-03 2003-01-17 Koha Co Ltd 発光装置
US6531328B1 (en) * 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
JP2006024794A (ja) 2004-07-08 2006-01-26 Sanyo Electric Co Ltd フルカラー発光ダイオード装置
JP2006222412A (ja) * 2005-01-17 2006-08-24 Citizen Electronics Co Ltd 発光装置
JP5161504B2 (ja) * 2007-07-12 2013-03-13 ローム株式会社 半導体発光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003204081A (ja) * 2002-01-08 2003-07-18 Rohm Co Ltd 半導体発光装置
JP2006210734A (ja) * 2005-01-28 2006-08-10 Sanyo Electric Co Ltd 発光装置
JP2006222382A (ja) * 2005-02-14 2006-08-24 Nichia Chem Ind Ltd 半導体装置及び半導体装置の形成方法

Also Published As

Publication number Publication date
TW200917531A (en) 2009-04-16
US20150311394A1 (en) 2015-10-29
US8847255B2 (en) 2014-09-30
US20180130777A1 (en) 2018-05-10
CN101743647A (zh) 2010-06-16
US9899356B2 (en) 2018-02-20
KR101139567B1 (ko) 2012-04-27
US20100207133A1 (en) 2010-08-19
CN101743647B (zh) 2012-10-10
US10381331B2 (en) 2019-08-13
JP5161504B2 (ja) 2013-03-13
US9543477B2 (en) 2017-01-10
US9093358B2 (en) 2015-07-28
TWI381550B (zh) 2013-01-01
US20140367714A1 (en) 2014-12-18
JP2009021417A (ja) 2009-01-29
US20170092629A1 (en) 2017-03-30
KR20100028109A (ko) 2010-03-11

Similar Documents

Publication Publication Date Title
WO2009008416A1 (ja) 半導体発光装置
EP2187443A3 (en) Light-emitting device, method for manufacturing the same, and cellular phone
TW200711065A (en) Semiconductor device and manufacturing method thereof
TW200631064A (en) Semiconductor device
EP2393132A3 (en) Semiconductor light emitting device
WO2009013826A1 (ja) 半導体装置
EP2187442A3 (en) Light emitting device and light emitting device package having the same
EP1939942A3 (en) Semiconductor device and method of fabricating the same
EP2442374A3 (en) Light emitting device and light emitting device package thereof
TW200605394A (en) Nitride semiconductor light emitting device
EP2180532A3 (en) Semiconductor light emitting device
TW200731496A (en) Semiconductor package substrate
EP2657996A3 (en) Semiconductor light-emitting device
TW200723457A (en) Semiconductor device and method for manufacturing semiconductor device
TW200725880A (en) Semiconductor piezoresistive sensor and operation method thereof
WO2008096521A1 (ja) 半導体装置
WO2009127326A3 (en) Led module having a platform with a central recession
WO2009125953A3 (ko) 발광 소자
EP2388834A3 (en) Light emitting device, light emitting device package, and lighting device
EP2357681A3 (en) Light emitting device and light unit
TW200739941A (en) Nitride semiconductor device
TW200627561A (en) Chip package
WO2006094025A3 (en) Fabricated adhesive microstructures for making an electrical connection
WO2007081932A3 (en) Integrated iii-nitride devices
EP2330643A3 (en) Light emitting device

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880024074.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08790950

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12668554

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20107001098

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 08790950

Country of ref document: EP

Kind code of ref document: A1