WO2009008457A1 - Heat radiating component for electronic component, case for electronic component, carrier for electronic component, and package for electronic component - Google Patents
Heat radiating component for electronic component, case for electronic component, carrier for electronic component, and package for electronic component Download PDFInfo
- Publication number
- WO2009008457A1 WO2009008457A1 PCT/JP2008/062425 JP2008062425W WO2009008457A1 WO 2009008457 A1 WO2009008457 A1 WO 2009008457A1 JP 2008062425 W JP2008062425 W JP 2008062425W WO 2009008457 A1 WO2009008457 A1 WO 2009008457A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electronic component
- component
- mass
- heat radiating
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F3/26—Impregnating
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/06—Alloys based on chromium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F2003/248—Thermal after-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Powder Metallurgy (AREA)
Abstract
This invention provides a heat radiating component for an electric component using a Cr-Cu alloy, and a case for an electronic component, a carrier for an electronic component, or a package for an electronic component using the heat radiating component. The heat radiating component comprises a molded product produced by cold pressing a Cr-Cu alloy plate produced by subjecting a Cr-Cu alloy to powder metallurgy. The molded product comprises more than 30% by mass and not more than 80% by mass of Cr with the balance consisting of Cu and unavoidable impurities. The unavoidable impurities are O: not more than 0.15% by mass, N: not more than 0.1% by mass, C: not more than 0.1% by mass, Al: not more than 0.05% by mass, and Si: not more than 0.1% by mass.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007179617 | 2007-07-09 | ||
| JP2007-179617 | 2007-07-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2009008457A1 true WO2009008457A1 (en) | 2009-01-15 |
Family
ID=40228628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/062425 Ceased WO2009008457A1 (en) | 2007-07-09 | 2008-07-09 | Heat radiating component for electronic component, case for electronic component, carrier for electronic component, and package for electronic component |
Country Status (2)
| Country | Link |
|---|---|
| JP (3) | JP5216981B2 (en) |
| WO (1) | WO2009008457A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102612745A (en) * | 2009-10-01 | 2012-07-25 | Jfe精密株式会社 | Radiating plate for electronic equipment and manufacturing method thereof |
| WO2016190130A1 (en) * | 2015-05-28 | 2016-12-01 | 日本電波工業株式会社 | Oscillation device |
| CN111584371A (en) * | 2020-05-25 | 2020-08-25 | 苏州融睿电子科技有限公司 | Manufacturing method of packaging shell and packaging shell |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8766430B2 (en) | 2012-06-14 | 2014-07-01 | Infineon Technologies Ag | Semiconductor modules and methods of formation thereof |
| US9041460B2 (en) | 2013-08-12 | 2015-05-26 | Infineon Technologies Ag | Packaged power transistors and power packages |
| JP6981846B2 (en) * | 2017-10-26 | 2021-12-17 | Jfe精密株式会社 | Heat dissipation plate and its manufacturing method |
| JP6775071B2 (en) * | 2018-10-05 | 2020-10-28 | 日本特殊陶業株式会社 | Wiring board |
| JP6936839B2 (en) * | 2018-10-05 | 2021-09-22 | 日本特殊陶業株式会社 | Wiring board |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0536492B2 (en) * | 1983-03-02 | 1993-05-31 | Sumitomo Metal Ind | |
| JP2002332503A (en) * | 2001-05-08 | 2002-11-22 | Japan Atom Energy Res Inst | Method for producing Fe-50Cr alloy using plasma discharge sintering method |
| JP2003055739A (en) * | 2001-06-05 | 2003-02-26 | Nippon Steel Corp | Ferritic thin steel sheet with excellent shape freezing properties |
| JP2003089853A (en) * | 2001-09-14 | 2003-03-28 | Nisshin Steel Co Ltd | HIGH PURITY Fe-Cr ALLOY HAVING EXCELLENT FORMING WORKABILITY |
| JP2005314740A (en) * | 2004-04-28 | 2005-11-10 | Nippon Steel & Sumikin Stainless Steel Corp | Ferritic stainless steel excellent in heat resistance and workability and method for producing the same |
| JP2005325377A (en) * | 2004-05-12 | 2005-11-24 | Nippon Steel & Sumikin Stainless Steel Corp | Manufacturing method of heat-resistant ferritic stainless steel sheet with excellent workability |
| JP2005330583A (en) * | 2004-04-15 | 2005-12-02 | Jfe Seimitsu Kk | Cu-Cr alloy and method for producing Cu-Cr alloy |
| WO2007094507A1 (en) * | 2006-02-15 | 2007-08-23 | Jfe Precision Corporation | Cr-Cu ALLOY, PROCESS FOR PRODUCING THE SAME, HEAT SINK FOR SEMICONDUCTOR, AND HEAT DISSIPATING COMPONENT FOR SEMICONDUCTOR |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04198439A (en) * | 1990-11-29 | 1992-07-17 | Sumitomo Electric Ind Ltd | Semiconductor device material and its manufacture |
| JPH09324230A (en) * | 1996-06-06 | 1997-12-16 | Furukawa Electric Co Ltd:The | Highly conductive wire |
| JP3490853B2 (en) * | 1996-11-08 | 2004-01-26 | 独立行政法人物質・材料研究機構 | High-strength, high-conductivity, high-chromium-containing copper alloy material and method for producing the same |
| JP4346142B2 (en) * | 1999-02-24 | 2009-10-21 | 古河電気工業株式会社 | Low thermal expansion coefficient high thermal conductivity copper alloy and electrical and electronic equipment parts using the copper alloy |
| JP2006013420A (en) * | 2004-01-28 | 2006-01-12 | Kyocera Corp | Electronic component storage package and electronic device |
-
2008
- 2008-07-09 WO PCT/JP2008/062425 patent/WO2009008457A1/en not_active Ceased
- 2008-07-09 JP JP2008178758A patent/JP5216981B2/en active Active
-
2009
- 2009-06-12 JP JP2009140858A patent/JP5531329B2/en active Active
-
2012
- 2012-05-07 JP JP2012105709A patent/JP2012216844A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0536492B2 (en) * | 1983-03-02 | 1993-05-31 | Sumitomo Metal Ind | |
| JP2002332503A (en) * | 2001-05-08 | 2002-11-22 | Japan Atom Energy Res Inst | Method for producing Fe-50Cr alloy using plasma discharge sintering method |
| JP2003055739A (en) * | 2001-06-05 | 2003-02-26 | Nippon Steel Corp | Ferritic thin steel sheet with excellent shape freezing properties |
| JP2003089853A (en) * | 2001-09-14 | 2003-03-28 | Nisshin Steel Co Ltd | HIGH PURITY Fe-Cr ALLOY HAVING EXCELLENT FORMING WORKABILITY |
| JP2005330583A (en) * | 2004-04-15 | 2005-12-02 | Jfe Seimitsu Kk | Cu-Cr alloy and method for producing Cu-Cr alloy |
| JP2005314740A (en) * | 2004-04-28 | 2005-11-10 | Nippon Steel & Sumikin Stainless Steel Corp | Ferritic stainless steel excellent in heat resistance and workability and method for producing the same |
| JP2005325377A (en) * | 2004-05-12 | 2005-11-24 | Nippon Steel & Sumikin Stainless Steel Corp | Manufacturing method of heat-resistant ferritic stainless steel sheet with excellent workability |
| WO2007094507A1 (en) * | 2006-02-15 | 2007-08-23 | Jfe Precision Corporation | Cr-Cu ALLOY, PROCESS FOR PRODUCING THE SAME, HEAT SINK FOR SEMICONDUCTOR, AND HEAT DISSIPATING COMPONENT FOR SEMICONDUCTOR |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102612745A (en) * | 2009-10-01 | 2012-07-25 | Jfe精密株式会社 | Radiating plate for electronic equipment and manufacturing method thereof |
| CN102612745B (en) * | 2009-10-01 | 2016-02-24 | Jfe精密株式会社 | Radiating plate for electronic equipment and manufacturing method thereof |
| US9299636B2 (en) | 2009-10-01 | 2016-03-29 | Jfe Precision Corporation | Heat sink for electronic device and process for production thereof |
| WO2016190130A1 (en) * | 2015-05-28 | 2016-12-01 | 日本電波工業株式会社 | Oscillation device |
| US10305491B2 (en) | 2015-05-28 | 2019-05-28 | Nihon Dempa Kogyo Co., Ltd. | Oscillator |
| CN111584371A (en) * | 2020-05-25 | 2020-08-25 | 苏州融睿电子科技有限公司 | Manufacturing method of packaging shell and packaging shell |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012216844A (en) | 2012-11-08 |
| JP2009038366A (en) | 2009-02-19 |
| JP5531329B2 (en) | 2014-06-25 |
| JP2009239299A (en) | 2009-10-15 |
| JP5216981B2 (en) | 2013-06-19 |
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