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WO2009008041A1 - 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法 - Google Patents

絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法 Download PDF

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Publication number
WO2009008041A1
WO2009008041A1 PCT/JP2007/063586 JP2007063586W WO2009008041A1 WO 2009008041 A1 WO2009008041 A1 WO 2009008041A1 JP 2007063586 W JP2007063586 W JP 2007063586W WO 2009008041 A1 WO2009008041 A1 WO 2009008041A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
wiring board
manufacturing
insulating film
multilayered wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/063586
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English (en)
French (fr)
Inventor
Yasushi Kobayashi
Yoshihiro Nakata
Shirou Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to PCT/JP2007/063586 priority Critical patent/WO2009008041A1/ja
Priority to KR1020097027275A priority patent/KR101158185B1/ko
Priority to PCT/JP2008/058977 priority patent/WO2009008212A1/ja
Priority to JP2009522546A priority patent/JP5267460B2/ja
Priority to CN200880023571.XA priority patent/CN101689412B/zh
Publication of WO2009008041A1 publication Critical patent/WO2009008041A1/ja
Priority to US12/648,804 priority patent/US8580907B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/16—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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Abstract

　低誘電率で高強度な絶縁膜の形成に好適に使用可能な絶縁膜材料、配線間の寄生容量が低減可能な多層配線基板及びその効率的な製造方法、並びに、高速で信頼性の高い半導体装置及びその効率的な製造方法を提供することを目的とする。 　本発明の絶縁膜材料は、下記構造式（１）で表される構造を有するポリカルボシラン化合物を少なくとも含むことを特徴とする。 　ただし、前記構造式（１）中、Ｒ１は、ｎ回の繰返しの中で、互いに同一であってもよいし異なっていてもよく、炭素数１～４の炭化水素及び芳香族炭化水素のいずれかを表す。Ｒ２は、ｎ回の繰返しの中で、互いに同一であってもよいし異なっていてもよく、炭素数１～４の炭化水素及び芳香族炭化水素のいずれかを表す。ｎは、５～５，０００の整数を表す。
PCT/JP2007/063586 2007-07-06 2007-07-06 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法 Ceased WO2009008041A1 (ja)

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PCT/JP2007/063586 WO2009008041A1 (ja) 2007-07-06 2007-07-06 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法
KR1020097027275A KR101158185B1 (ko) 2007-07-06 2008-05-15 절연막 재료, 다층 배선 기판과 그 제조 방법, 및 반도체 장치와 그 제조 방법
PCT/JP2008/058977 WO2009008212A1 (ja) 2007-07-06 2008-05-15 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法
JP2009522546A JP5267460B2 (ja) 2007-07-06 2008-05-15 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法
CN200880023571.XA CN101689412B (zh) 2007-07-06 2008-05-15 绝缘膜材料、多层布线基板及其制造方法和半导体装置及其制造方法
US12/648,804 US8580907B2 (en) 2007-07-06 2009-12-29 Insulating film material, multilayer wiring board and production method thereof, and semiconductor device and production method thereof

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PCT/JP2008/058977 Ceased WO2009008212A1 (ja) 2007-07-06 2008-05-15 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法

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