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WO2009005014A1 - Composition de décapage de résines - Google Patents

Composition de décapage de résines Download PDF

Info

Publication number
WO2009005014A1
WO2009005014A1 PCT/JP2008/061763 JP2008061763W WO2009005014A1 WO 2009005014 A1 WO2009005014 A1 WO 2009005014A1 JP 2008061763 W JP2008061763 W JP 2008061763W WO 2009005014 A1 WO2009005014 A1 WO 2009005014A1
Authority
WO
WIPO (PCT)
Prior art keywords
resist stripping
stripping composition
specific
ether
amide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/061763
Other languages
English (en)
Japanese (ja)
Inventor
Hiromu Taguchi
Masanao Sumita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toagosei Co Ltd
Original Assignee
Toagosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toagosei Co Ltd filed Critical Toagosei Co Ltd
Publication of WO2009005014A1 publication Critical patent/WO2009005014A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention décrit une composition de décapage de résines qui prend une forme liquide à une température de travail, provoque à peine la corrosion d'un métal (par ex., le cuivre), et facile à filtrer et peut être réutilisée facilement. La composition de décapage de résines comprend un mélange d'au moins un élément choisi parmi un ester cyclique comportant un noyau de 3 à 6 chaînons (par ex., le carbonate d'éthylène, le carbonate de propylène), une cétone comportant un groupe alkyle inférieure (par ex., l'acétone, la méthyl éthyl cétone) et un éther monoalkylique spécifique d'alkylène glycol (par ex., l'éther monoéthylique d'éthylène glycol, l'éther monobutylique de diéthylène glycol), et un amide cyclique spécifique (par ex., la N-méthyl-2-pyrrolidone) ou un amide linéaire spécifique (par ex., le N,N-diméthylacétoamide, le N,N-diéthylacétoamide).
PCT/JP2008/061763 2007-07-03 2008-06-27 Composition de décapage de résines Ceased WO2009005014A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007175640A JP2009014938A (ja) 2007-07-03 2007-07-03 レジスト剥離剤組成物
JP2007-175640 2007-07-03

Publications (1)

Publication Number Publication Date
WO2009005014A1 true WO2009005014A1 (fr) 2009-01-08

Family

ID=40226060

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061763 Ceased WO2009005014A1 (fr) 2007-07-03 2008-06-27 Composition de décapage de résines

Country Status (5)

Country Link
JP (1) JP2009014938A (fr)
KR (1) KR20100030617A (fr)
CN (1) CN101669072A (fr)
TW (1) TW200921302A (fr)
WO (1) WO2009005014A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9360761B2 (en) 2009-08-25 2016-06-07 Ltc Co., Ltd. Photoresist stripping composition for manufacturing LCD
JP2020531596A (ja) * 2017-07-06 2020-11-05 ダウ グローバル テクノロジーズ エルエルシー 電子部品の洗浄および剥離のためのアミドの組み合わせ
JPWO2021049208A1 (fr) * 2019-09-09 2021-03-18
JP7773670B1 (ja) 2024-06-21 2025-11-19 花王株式会社 基板の処理方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013504782A (ja) * 2009-09-09 2013-02-07 ドンウ ファイン−ケム カンパニー．，リミティド． 銅系配線の形成のためのレジスト除去用組成物
KR101169332B1 (ko) * 2010-05-12 2012-07-30 주식회사 이엔에프테크놀로지 포토레지스트 박리액 조성물
KR102021158B1 (ko) * 2012-06-26 2019-09-11 노무라마이크로사이엔스가부시키가이샤 레지스트 박리제
KR102081710B1 (ko) * 2012-07-31 2020-02-28 세메스 주식회사 기판 세정 장치 및 기판 세정 방법
CN105143984B (zh) * 2013-03-07 2017-09-05 株式会社Lg化学 用于去除光阻剂的剥离剂组合物及使用其剥离光阻剂的方法
CN103336412B (zh) * 2013-07-03 2017-02-08 北京科华微电子材料有限公司 一种新型的光刻胶剥离液及其应用工艺
CN105579907B (zh) * 2013-09-25 2019-12-17 东京应化工业株式会社 感放射线性组合物及图案制造方法
JP6228796B2 (ja) * 2013-09-26 2017-11-08 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
KR102213779B1 (ko) * 2014-08-26 2021-02-08 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
KR102088653B1 (ko) * 2016-04-28 2020-03-13 후지필름 가부시키가이샤 처리액 및 처리액 수용체
JP7061962B2 (ja) * 2016-07-28 2022-05-02 野村マイクロ・サイエンス株式会社 レジスト剥離液組成物
US20230038651A1 (en) * 2021-07-27 2023-02-09 Yuanhan Materials Inc. Environmentally friendly photoresist removing composition and method for using the same
CN115291483B (zh) * 2022-09-02 2023-08-29 昆山晶科微电子材料有限公司 一种半导体剥离液及其制备方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11218933A (ja) * 1998-01-30 1999-08-10 Fuji Film Olin Kk レジスト洗浄除去用溶剤および電子部品製造用基材の製造方法
JP2001194806A (ja) * 1999-10-25 2001-07-19 Toray Ind Inc レジスト剥離方法
JP2001324821A (ja) * 2000-05-15 2001-11-22 Fuji Photo Film Co Ltd シリコン含有２層レジストの剥離方法
JP2002520659A (ja) * 1998-07-10 2002-07-09 クラリアント・インターナシヨナル・リミテッド フォトレジストおよび有機物質を基体表面から取り除くための組成物
JP2003513342A (ja) * 1999-11-02 2003-04-08 東京エレクトロン株式会社 超臨界二酸化炭素法を用いた基板からフォトレジストおよび残渣の除去
JP2003122028A (ja) * 2001-10-17 2003-04-25 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
JP2004029346A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
JP2004502980A (ja) * 2000-07-10 2004-01-29 イーケイシー　テクノロジー　インコーポレーテッド 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
JP2005070795A (ja) * 2003-08-27 2005-03-17 Lg Philips Lcd Co Ltd 銅用レジストを除去するための組成物及びこれを用いた除去方法
WO2005057281A2 (fr) * 2003-12-02 2005-06-23 Advanced Technology Materials, Inc. Procede et produit chimique servant a enlever de la resine photosensible, un revetement anti-reflechissant ou un materiau de remplissage

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2759462B2 (ja) * 1988-11-11 1998-05-28 ナガセ電子化学株式会社 水性剥離剤組成物
JPH11282162A (ja) * 1998-03-26 1999-10-15 Jsr Corp 硬化膜の製造法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11218933A (ja) * 1998-01-30 1999-08-10 Fuji Film Olin Kk レジスト洗浄除去用溶剤および電子部品製造用基材の製造方法
JP2002520659A (ja) * 1998-07-10 2002-07-09 クラリアント・インターナシヨナル・リミテッド フォトレジストおよび有機物質を基体表面から取り除くための組成物
JP2001194806A (ja) * 1999-10-25 2001-07-19 Toray Ind Inc レジスト剥離方法
JP2003513342A (ja) * 1999-11-02 2003-04-08 東京エレクトロン株式会社 超臨界二酸化炭素法を用いた基板からフォトレジストおよび残渣の除去
JP2001324821A (ja) * 2000-05-15 2001-11-22 Fuji Photo Film Co Ltd シリコン含有２層レジストの剥離方法
JP2004502980A (ja) * 2000-07-10 2004-01-29 イーケイシー　テクノロジー　インコーポレーテッド 半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
JP2003122028A (ja) * 2001-10-17 2003-04-25 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
JP2004029346A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
JP2005070795A (ja) * 2003-08-27 2005-03-17 Lg Philips Lcd Co Ltd 銅用レジストを除去するための組成物及びこれを用いた除去方法
WO2005057281A2 (fr) * 2003-12-02 2005-06-23 Advanced Technology Materials, Inc. Procede et produit chimique servant a enlever de la resine photosensible, un revetement anti-reflechissant ou un materiau de remplissage

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9360761B2 (en) 2009-08-25 2016-06-07 Ltc Co., Ltd. Photoresist stripping composition for manufacturing LCD
JP2020531596A (ja) * 2017-07-06 2020-11-05 ダウ グローバル テクノロジーズ エルエルシー 電子部品の洗浄および剥離のためのアミドの組み合わせ
US11016392B2 (en) 2017-07-06 2021-05-25 Dow Global Technologies Llc Amide combinations for cleaning and stripping of electronic parts
JP7092807B2 (ja) 2017-07-06 2022-06-28 ダウ グローバル テクノロジーズ エルエルシー 電子部品の洗浄および剥離のためのアミドの組み合わせ
JPWO2021049208A1 (fr) * 2019-09-09 2021-03-18
WO2021049208A1 (fr) * 2019-09-09 2021-03-18 富士フイルム株式会社 Liquide de traitement, kit, procédé de production de liquide de traitement, procédé de nettoyage de substrat et procédé de traitement de substrat
JP7324290B2 (ja) 2019-09-09 2023-08-09 富士フイルム株式会社 処理液、キット、処理液の製造方法、基板の洗浄方法、基板の処理方法
JP7773670B1 (ja) 2024-06-21 2025-11-19 花王株式会社 基板の処理方法

Also Published As

Publication number Publication date
CN101669072A (zh) 2010-03-10
TW200921302A (en) 2009-05-16
JP2009014938A (ja) 2009-01-22
KR20100030617A (ko) 2010-03-18

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