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WO2009002161A1 - Procédé pour protéger un élément optique dans une source de rayonnement pour rayonnement électromagnétique à longueur d'onde dans la gamme de longueurs d'onde de l'ultraviolet extrême et source de rayonnement - Google Patents

Procédé pour protéger un élément optique dans une source de rayonnement pour rayonnement électromagnétique à longueur d'onde dans la gamme de longueurs d'onde de l'ultraviolet extrême et source de rayonnement Download PDF

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Publication number
WO2009002161A1
WO2009002161A1 PCT/NL2008/050390 NL2008050390W WO2009002161A1 WO 2009002161 A1 WO2009002161 A1 WO 2009002161A1 NL 2008050390 W NL2008050390 W NL 2008050390W WO 2009002161 A1 WO2009002161 A1 WO 2009002161A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
optical element
wavelength
xuv
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/NL2008/050390
Other languages
English (en)
Inventor
Rob Carlo Wieggers
Willem Jan Goedheer
Frederik Bijkerk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stichting voor Fundamenteel Onderzoek der Materie
Original Assignee
Stichting voor Fundamenteel Onderzoek der Materie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stichting voor Fundamenteel Onderzoek der Materie filed Critical Stichting voor Fundamenteel Onderzoek der Materie
Publication of WO2009002161A1 publication Critical patent/WO2009002161A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0092—Housing of the apparatus for producing X-rays; Environment inside the housing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure

Definitions

  • the invention relates to a method for protecting an optical element in a radiation source for electromagnetic radiation with a wavelength in the extreme ultraviolet (XUV) wavelength range, in particular with a wavelength in the wavelength range between 1 nm and 15 nm, this radiation source at least comprising a chamber for receiving therein a plasma generating XUV radiation, the optical element, in particular a collector for bundling XUV radiation generated by the plasma, and a quantity of background gas for scattering between the plasma and the optical element particles exiting the plasma.
  • XUV extreme ultraviolet
  • the wavelength range designated above as XUV radiation comprises both the range around a wavelength of 13.5 nm, referred to in the literature as EUV radiation, and radiation in the soft X-ray range of the electromagnetic spectrum.
  • a radiation source for electromagnetic radiation is known with a wavelength in the deep ultraviolet (DUV) wavelength range, in particular with a wavelength of 193 nm, which is applied in the technical field of nanolithography in the production of semiconductor circuits.
  • DUV deep ultraviolet
  • the currently known XUV radiation source substantially comprises a vacuum chamber or ultra-high vacuum chamber, which is provided with per se known means suitable for the purpose of bringing to a plasma state a material introduced into the chamber which is known to generate an XUV radiation with a determined wavelength when in a plasma state.
  • the generated XUV radiation is bundled and guided out of the chamber using a collector, for instance a multilayer mirror or an assembly of curved mirrors of for instance ruthenium (Ru) or palladium (Pd) .
  • the high-energy photons generated by the plasma (a typical value for the photon energy of a photon generated in a tin plasma amounts to 92 eV) can result in photoionization of particles present in the chamber in a low concentration as background gas or as residual gas, this photoionization, in addition to other mechanisms, resulting in the occurrence of a secondary plasma at the location of the collector.
  • the positive ions in a secondary plasma for instance Ar + , Ar 2+ and Ar 3+ , can be accelerated by a high potential difference present close to the collector as a result of the relatively high energy of the electrons in the secondary plasma.
  • accelerated ions may strike the collector and there exert a sputtering action, wherein the damage is caused mainly by the polyvalent ions as a consequence of their relatively high kinetic energy.
  • This object is achieved with a method of the type stated in the preamble, which is characterized according to the invention by admitting into the chamber a quantity of cooling gas for cooling the electrons in a secondary plasma occurring in the vicinity of the optical element.
  • the cooling gas comprises at least one silicon compound from the series of the silanes (Si n H 2n + 2 ) > wherein n is a whole number, wherein for instance n ⁇ 8.
  • the silicon compound is silane (SiH 4 ) .
  • Silane can undergo different reactions with electrons from the secondary plasma, which all result in a cooling of the secondary plasma.
  • the following reaction mechanisms, among others, are known.
  • the cooling gas comprises at least one carbon compound from the series of the alkanes (C n H 2n ⁇ ) r wherein n is a whole number, wherein for instance n ⁇ 8, for instance methane (CH 4 ) .
  • Alkanes as cooling gas are for instance suitable in a radiation source for XUV radiation with a wavelength of 6.7 nm.
  • the cooling gas comprises at least one carbon compound from the series of the alkenes (C n H 2n ) , wherein n is a whole number, wherein for instance 2 ⁇ n ⁇ 8.
  • the cooling gas comprises a germanium compound (Ge-compound) from the series (Ge r .H 2n + 2 ) wherein n is a whole number, wherein for instance n ⁇ 8, for instance GeH 4 .
  • the background gas is a mixture of argon and the respective cooling gas.
  • a background gas comprising both argon and a cooling gas use is advantageously made of the argon for the purpose of scattering highly-charged particles from the primary plasma, and of the cooling gas for the purpose of cooling the electrons in the secondary plasma.
  • the cooling gas is a silane compound from the series of the silanes, in particular silane
  • a mixture of the cooling gas with argon is preferred to a pure silane gas for safety reasons.
  • the quantity of the cooling gas in the background gas amounts to a maximum of 10%, for instance about 5%.
  • the invention further relates to a radiation source for electromagnetic radiation with a wavelength in the extreme ultraviolet (XUV) wavelength range, in particular with a wavelength in the wavelength range between 1 nm and 15 nm, this radiation source at least comprising a chamber for receiving therein a plasma generating XUV radiation, an optical element, in particular a collector for bundling XUV radiation generated by the plasma, and a quantity of background gas for scattering between the plasma and the optical element particles exiting the plasma, provided with inlet means for admitting into the chamber a quantity of cooling gas for cooling the electrons in a secondary plasma occurring in the vicinity of the optical element as according to the above described method.
  • XUV extreme ultraviolet

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Toxicology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un procédé servant à protéger un élément optique dans une source de rayonnement pour rayonnement électromagnétique ayant une longueur d'onde dans la gamme de longueurs d'onde de l'ultraviolet extrême (XUV), en particulier une longueur d'onde dans la gamme de longueurs d'onde allant de 1 nm à 15 nm. Cette source de rayonnement comprend au moins une chambre pour la réception d'un plasma générant le rayonnement XUV, l'élément optique, en particulier un collecteur pour mettre en faisceau le rayonnement XUV généré par le plasma, ainsi qu'une quantité de gaz de fond pour la dispersion entre le plasma et l'élément optique de particules quittant le plasma. Le procédé selon l'invention est caractérisé en ce qu'on admet dans la chambre une quantité de gaz de refroidissement servant à refroidir les électrons dans un plasma secondaire se produisant à proximité de l'élément optique. L'invention concerne également une source de rayonnement pourvue de moyens d'entrée pour un tel gaz de refroidissement.
PCT/NL2008/050390 2007-06-26 2008-06-17 Procédé pour protéger un élément optique dans une source de rayonnement pour rayonnement électromagnétique à longueur d'onde dans la gamme de longueurs d'onde de l'ultraviolet extrême et source de rayonnement Ceased WO2009002161A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1034039 2007-06-26
NL1034039A NL1034039C2 (nl) 2007-06-26 2007-06-26 Werkwijze voor het beschermen van een optisch element in een stralingsbron voor elektromagnetische straling met een golflengte in het extreem ultraviolet (XUV) golflengtegebied en stralingsbron.

Publications (1)

Publication Number Publication Date
WO2009002161A1 true WO2009002161A1 (fr) 2008-12-31

Family

ID=38984157

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2008/050390 Ceased WO2009002161A1 (fr) 2007-06-26 2008-06-17 Procédé pour protéger un élément optique dans une source de rayonnement pour rayonnement électromagnétique à longueur d'onde dans la gamme de longueurs d'onde de l'ultraviolet extrême et source de rayonnement

Country Status (2)

Country Link
NL (1) NL1034039C2 (fr)
WO (1) WO2009002161A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020084425A1 (en) * 2001-01-03 2002-07-04 Klebanoff Leonard E. Self-cleaning optic for extreme ultraviolet lithography
WO2004104707A2 (fr) * 2003-05-22 2004-12-02 Philips Intellectual Property & Standards Gmbh Procede et dispositif pour nettoyer au moins un composant optique

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020084425A1 (en) * 2001-01-03 2002-07-04 Klebanoff Leonard E. Self-cleaning optic for extreme ultraviolet lithography
WO2004104707A2 (fr) * 2003-05-22 2004-12-02 Philips Intellectual Property & Standards Gmbh Procede et dispositif pour nettoyer au moins un composant optique

Also Published As

Publication number Publication date
NL1034039C2 (nl) 2008-12-30

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