[go: up one dir, main page]

WO2009001466A1 - 熱処理装置、及び半導体装置の製造方法 - Google Patents

熱処理装置、及び半導体装置の製造方法 Download PDF

Info

Publication number
WO2009001466A1
WO2009001466A1 PCT/JP2007/063037 JP2007063037W WO2009001466A1 WO 2009001466 A1 WO2009001466 A1 WO 2009001466A1 JP 2007063037 W JP2007063037 W JP 2007063037W WO 2009001466 A1 WO2009001466 A1 WO 2009001466A1
Authority
WO
WIPO (PCT)
Prior art keywords
treatment apparatus
heat treatment
semiconductor device
producing semiconductor
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/063037
Other languages
English (en)
French (fr)
Inventor
Kouichi Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to JP2009520266A priority Critical patent/JP5304647B2/ja
Priority to PCT/JP2007/063037 priority patent/WO2009001466A1/ja
Publication of WO2009001466A1 publication Critical patent/WO2009001466A1/ja
Priority to US12/633,029 priority patent/US8425226B2/en
Anticipated expiration legal-status Critical
Priority to US13/804,371 priority patent/US8889432B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/688—Capacitors having no potential barriers having dielectrics comprising perovskite structures comprising barrier layers to prevent diffusion of hydrogen or oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

【課題】ノボラック樹脂を含む保護絶縁膜の劣化を防止することが可能な熱処理装置、及び半導体装置の製造方法を提供すること。 【解決手段】シリコン基板１０を収容する処理室１０１と、処理室１０１内に設けられ、シリコン基板１０を加熱するヒータ１１０と、処理室１０１内の雰囲気に含まれる酸素の濃度を、大気中における酸素の濃度よりも低減する雰囲気調節機構１１２とを有する熱処理装置による。その雰囲気調節機構１１２には、例えば、酸素トラップが設けられる。
PCT/JP2007/063037 2007-06-28 2007-06-28 熱処理装置、及び半導体装置の製造方法 Ceased WO2009001466A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009520266A JP5304647B2 (ja) 2007-06-28 2007-06-28 熱処理装置、及び半導体装置の製造方法
PCT/JP2007/063037 WO2009001466A1 (ja) 2007-06-28 2007-06-28 熱処理装置、及び半導体装置の製造方法
US12/633,029 US8425226B2 (en) 2007-06-28 2009-12-08 Heat treatment apparatus and method of manufacturing semiconductor device
US13/804,371 US8889432B2 (en) 2007-06-28 2013-03-14 Heat treatment apparatus and method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/063037 WO2009001466A1 (ja) 2007-06-28 2007-06-28 熱処理装置、及び半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/633,029 Continuation US8425226B2 (en) 2007-06-28 2009-12-08 Heat treatment apparatus and method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
WO2009001466A1 true WO2009001466A1 (ja) 2008-12-31

Family

ID=40185298

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/063037 Ceased WO2009001466A1 (ja) 2007-06-28 2007-06-28 熱処理装置、及び半導体装置の製造方法

Country Status (3)

Country Link
US (2) US8425226B2 (ja)
JP (1) JP5304647B2 (ja)
WO (1) WO2009001466A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101030765B1 (ko) * 2007-02-27 2011-04-27 후지쯔 세미컨덕터 가부시키가이샤 반도체 기억 장치, 반도체 기억 장치의 제조 방법, 및 패키지 수지 형성 방법
US8460971B2 (en) * 2010-05-06 2013-06-11 Ineffable Cellular Limited Liability Company Semiconductor device packaging structure and packaging method
US8932945B2 (en) * 2012-07-09 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer alignment system and method
KR102301501B1 (ko) * 2015-01-21 2021-09-13 삼성디스플레이 주식회사 가요성 표시 장치의 제조 방법
CN114305282A (zh) 2020-09-30 2022-04-12 博西华电器（江苏）有限公司 家用洗碗机
US11706930B2 (en) * 2021-05-27 2023-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for manufacturing the same
CN114413620B (zh) * 2022-02-09 2024-02-09 浙江元集新材料有限公司 基于氮气风刀的高频高速覆铜板铜箔防氧化装置及工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198564A (ja) * 1991-09-27 1993-08-06 Sony Corp 半導体装置の製造方法
JP2002257474A (ja) * 2001-02-26 2002-09-11 Espec Corp 高能率冷却式熱処理装置
JP2005268532A (ja) * 2004-03-18 2005-09-29 Sumitomo Bakelite Co Ltd 多孔質樹脂膜ならびにその製造方法および半導体装置
JP2007005394A (ja) * 2005-06-21 2007-01-11 Fujifilm Holdings Corp 絶縁膜の製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891334A (en) * 1987-11-10 1990-01-02 Nippon Zeon Co., Ltd. Process for production of electronic devices utilizing novolak resin as protective material
JP2567685B2 (ja) 1987-11-10 1996-12-25 日本ゼオン株式会社 電子部品保護用材料と該材料を用いた半導体装置の製造方法
US5271732A (en) * 1991-04-03 1993-12-21 Tokyo Electron Sagami Kabushiki Kaisha Heat-treating apparatus
JP3654597B2 (ja) * 1993-07-15 2005-06-02 株式会社ルネサステクノロジ 製造システムおよび製造方法
US5645419A (en) * 1994-03-29 1997-07-08 Tokyo Electron Kabushiki Kaisha Heat treatment method and device
EP0796353A4 (en) * 1994-12-07 2000-11-15 Despatch Ind Lp PROCESS FOR THE HEAT TREATMENT OF OXYGEN SENSITIVE PRODUCTS
US6310147B1 (en) * 1998-05-21 2001-10-30 Mitsui Chemicals, Inc. Epoxy-resin composition and use thereof
JP2000053748A (ja) * 1998-08-06 2000-02-22 Mitsui Chemicals Inc エポキシ樹脂組成物およびその用途
US6200023B1 (en) * 1999-03-15 2001-03-13 Steag Rtp Systems, Inc. Method for determining the temperature in a thermal processing chamber
US6902709B1 (en) * 1999-06-09 2005-06-07 Kabushiki Kaisha Toshiba Hydrogen removing apparatus
AU5651399A (en) 1999-09-14 2001-04-17 Nikon Corporation Exposure system, exposure device, application device, development device, and method of controlling wafer treating environment in the exposure system
JP4325046B2 (ja) * 1999-11-09 2009-09-02 Ｊｓｒ株式会社 膜形成用組成物、膜の形成方法、及び膜
JP2002035684A (ja) * 2000-07-28 2002-02-05 Clariant (Japan) Kk 保護膜の形成方法
JP3741604B2 (ja) * 2000-11-27 2006-02-01 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP2002343708A (ja) 2001-05-21 2002-11-29 Toshiba Corp 基板処理装置および熱処理方法
JP4876341B2 (ja) * 2001-07-13 2012-02-15 日本電気株式会社 アクティブマトリクス基板及びその製造方法
JP3813105B2 (ja) * 2002-03-28 2006-08-23 三井化学株式会社 硬化性に優れたエポキシ樹脂組成物、その硬化物およびその用途
JP2005062764A (ja) 2003-08-20 2005-03-10 Kyocera Chemical Corp ポジ型感光性樹脂組成物
JP2005142377A (ja) * 2003-11-07 2005-06-02 Mitsubishi Heavy Ind Ltd クリーニングガスのリサイクルシステム
JP2005249745A (ja) * 2004-03-08 2005-09-15 Ebara Corp 試料表面検査方法および検査装置
JP2006005223A (ja) 2004-06-18 2006-01-05 Seiko Epson Corp レジストパターンの形成方法及び半導体装置の製造方法、レジスト塗布現像装置
US9460945B2 (en) * 2006-11-06 2016-10-04 Hitachi Kokusai Electric Inc. Substrate processing apparatus for semiconductor devices
KR101030765B1 (ko) * 2007-02-27 2011-04-27 후지쯔 세미컨덕터 가부시키가이샤 반도체 기억 장치, 반도체 기억 장치의 제조 방법, 및 패키지 수지 형성 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198564A (ja) * 1991-09-27 1993-08-06 Sony Corp 半導体装置の製造方法
JP2002257474A (ja) * 2001-02-26 2002-09-11 Espec Corp 高能率冷却式熱処理装置
JP2005268532A (ja) * 2004-03-18 2005-09-29 Sumitomo Bakelite Co Ltd 多孔質樹脂膜ならびにその製造方法および半導体装置
JP2007005394A (ja) * 2005-06-21 2007-01-11 Fujifilm Holdings Corp 絶縁膜の製造方法

Also Published As

Publication number Publication date
JPWO2009001466A1 (ja) 2010-08-26
US20130203186A1 (en) 2013-08-08
US8889432B2 (en) 2014-11-18
US20100087014A1 (en) 2010-04-08
US8425226B2 (en) 2013-04-23
JP5304647B2 (ja) 2013-10-02

Similar Documents

Publication Publication Date Title
WO2009001466A1 (ja) 熱処理装置、及び半導体装置の製造方法
MY158201A (en) Multilayered material and method of producing the same
TW200731543A (en) Semiconductor film, method for manufacturing the same, and thin film transistor
WO2011028349A3 (en) Remote hydrogen plasma source of silicon containing film deposition
TWI266352B (en) Doping method, method for manufacturing semiconductor device and electronic application device
WO2007040749A3 (en) A method of forming a silicon oxynitride film with tensile stress
WO2006057818A3 (en) Contact doping and annealing systems and processes for nanowire thin films
WO2010094048A3 (en) Solar cell absorber layer formed from equilibrium precursor(s)
EP2562796A3 (en) Photoresist strip processes for improved device integrity
EP1085560B8 (en) Method for forming a silicon film
WO2009079636A3 (en) Methods and apparatuses for controlling contamination of substrates
MY158750A (en) Method for producing siliceous film and polysilazane coating treatment liquid used therefor
WO2009111473A3 (en) Method for curing a porous low dielectric constant dielectric film
EP2015363A4 (en) SEMICONDUCTOR ELEMENT AND PROCESS FOR ITS MANUFACTURE
WO2008045841A3 (en) High saturation ratio water condensation device and method
MY164303A (en) Method and device for processing silicon substrates
WO2009011224A1 (ja) 金属酸化物半導体の製造方法、それにより得られた薄膜トランジスタ
WO2007040587A3 (en) Method for forming a multiple layer passivation film and a deice
WO2010028825A3 (de) Verfahren zur behandlung von substraten, substrat und behandlungseinrichtung zur durchführung des verfahrens
FI20065227A0 (fi) Menetelmä ja laitteisto ilman puhdistamiseksi
TW200712000A (en) Method for producing porous silica and apparatus for producing thereof
WO2010033469A3 (en) Dielectric material treatment saystem and method of operating
TW200725742A (en) Annealed wafer and manufacturing method of annealed wafer
TW200718560A (en) Photo-reactive product sheets, and method and device for manufacturing the same
TW200733214A (en) Substrate treating method and apparatus

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07767830

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009520266

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07767830

Country of ref document: EP

Kind code of ref document: A1