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WO2009088260A3 - 발광 소자 - Google Patents

발광 소자 Download PDF

Info

Publication number
WO2009088260A3
WO2009088260A3 PCT/KR2009/000141 KR2009000141W WO2009088260A3 WO 2009088260 A3 WO2009088260 A3 WO 2009088260A3 KR 2009000141 W KR2009000141 W KR 2009000141W WO 2009088260 A3 WO2009088260 A3 WO 2009088260A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting element
semiconductor layer
layer
passivation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/000141
Other languages
English (en)
French (fr)
Other versions
WO2009088260A2 (ko
Inventor
배덕규
조현경
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to EP09701194.4A priority Critical patent/EP2246908B1/en
Priority to CN200980102031.5A priority patent/CN101965647B/zh
Priority to US12/522,247 priority patent/US8399901B2/en
Publication of WO2009088260A2 publication Critical patent/WO2009088260A2/ko
Publication of WO2009088260A3 publication Critical patent/WO2009088260A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations

Landscapes

  • Led Devices (AREA)

Abstract

실시예에 따른 발광 소자는 제1 도전형의 반도체층, 활성층 및 제2 도전형의 반도체층을 포함하는 발광 반도체층; 상기 발광 반도체층 상에 제1 패시베이션층; 및 상기 제1 패시베이션층 상에 탄성 계수가 2.0 내지 4.0 GPa인 제2 패시베이션층을 포함한다.
PCT/KR2009/000141 2008-01-11 2009-01-09 발광 소자 Ceased WO2009088260A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP09701194.4A EP2246908B1 (en) 2008-01-11 2009-01-09 Light emitting element
CN200980102031.5A CN101965647B (zh) 2008-01-11 2009-01-09 发光器件
US12/522,247 US8399901B2 (en) 2008-01-11 2009-01-09 Light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080003387A KR20090077425A (ko) 2008-01-11 2008-01-11 질화물계 발광 소자 및 그 제조방법
KR10-2008-0003387 2008-01-11

Publications (2)

Publication Number Publication Date
WO2009088260A2 WO2009088260A2 (ko) 2009-07-16
WO2009088260A3 true WO2009088260A3 (ko) 2009-09-11

Family

ID=40853627

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/000141 Ceased WO2009088260A2 (ko) 2008-01-11 2009-01-09 발광 소자

Country Status (5)

Country Link
US (1) US8399901B2 (ko)
EP (1) EP2246908B1 (ko)
KR (1) KR20090077425A (ko)
CN (1) CN101965647B (ko)
WO (1) WO2009088260A2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101008268B1 (ko) * 2008-11-10 2011-01-13 전자부품연구원 외부양자효율 개선을 위한 수직구조 발광다이오드 및 그 제조방법
KR100999779B1 (ko) 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101028277B1 (ko) 2010-05-25 2011-04-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 라이트 유닛
KR101744875B1 (ko) * 2011-07-11 2017-06-09 엘지디스플레이 주식회사 유기발광소자
CN105355763A (zh) * 2015-11-04 2016-02-24 杭州士兰明芯科技有限公司 钝化保护结构、发光二极管及其制作方法
KR101809833B1 (ko) 2016-04-29 2017-12-15 고려대학교 산학협력단 투명 금속산화막/금속/투명 금속산화막 보호층을 구비한 비정질 산화물 박막 트랜지스터
US12446363B2 (en) * 2017-12-11 2025-10-14 Hubei San'an Optoelectronics Co., Ltd. Light-emitting structure and light-emitting device including the same
CN119627614A (zh) * 2023-09-14 2025-03-14 中国科学院微电子研究所 一种钝化层的制备方法及垂直腔面发射激光器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247654A (ja) * 2003-02-17 2004-09-02 Sharp Corp 酸化物半導体発光素子およびその製造方法ならびに酸化物半導体発光素子を用いた半導体発光装置
KR100600373B1 (ko) * 2005-06-16 2006-07-18 엘지전자 주식회사 백색 발광 소자 및 이의 제조 방법
JP2006210491A (ja) * 2005-01-26 2006-08-10 Nichia Chem Ind Ltd 発光装置およびその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
TW576864B (en) * 2001-12-28 2004-02-21 Toshiba Corp Method for manufacturing a light-emitting device
JP3782357B2 (ja) * 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US20060208634A1 (en) * 2002-09-11 2006-09-21 General Electric Company Diffusion barrier coatings having graded compositions and devices incorporating the same
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
CN2645244Y (zh) * 2003-09-29 2004-09-29 上海金桥大晨光电科技有限公司 一种大功率发光二极管（led）器件
US8007629B2 (en) 2004-10-08 2011-08-30 Panasonic Corporation Method of manufacturing multi-layer circuit board
KR100617873B1 (ko) * 2005-07-15 2006-08-28 엘지전자 주식회사 수직형 발광 다이오드 및 그 제조방법
CN100394621C (zh) * 2005-07-29 2008-06-11 东莞市福地电子材料有限公司 氮化镓基发光二极管芯片的制造方法
JP4539547B2 (ja) * 2005-12-08 2010-09-08 セイコーエプソン株式会社 発光装置、発光装置の製造方法、及び電子機器
KR101113878B1 (ko) * 2006-06-23 2012-03-09 엘지이노텍 주식회사 수직형 발광 소자 및 그 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247654A (ja) * 2003-02-17 2004-09-02 Sharp Corp 酸化物半導体発光素子およびその製造方法ならびに酸化物半導体発光素子を用いた半導体発光装置
JP2006210491A (ja) * 2005-01-26 2006-08-10 Nichia Chem Ind Ltd 発光装置およびその製造方法
KR100600373B1 (ko) * 2005-06-16 2006-07-18 엘지전자 주식회사 백색 발광 소자 및 이의 제조 방법

Also Published As

Publication number Publication date
KR20090077425A (ko) 2009-07-15
US20110169041A1 (en) 2011-07-14
CN101965647A (zh) 2011-02-02
EP2246908B1 (en) 2019-03-06
EP2246908A2 (en) 2010-11-03
WO2009088260A2 (ko) 2009-07-16
CN101965647B (zh) 2012-05-30
EP2246908A4 (en) 2013-11-20
US8399901B2 (en) 2013-03-19

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