[go: up one dir, main page]

WO2009088198A3 - 발광 다이오드 코팅 방법 - Google Patents

발광 다이오드 코팅 방법 Download PDF

Info

Publication number
WO2009088198A3
WO2009088198A3 PCT/KR2009/000038 KR2009000038W WO2009088198A3 WO 2009088198 A3 WO2009088198 A3 WO 2009088198A3 KR 2009000038 W KR2009000038 W KR 2009000038W WO 2009088198 A3 WO2009088198 A3 WO 2009088198A3
Authority
WO
WIPO (PCT)
Prior art keywords
coating method
light emitting
emitting diode
leds
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/000038
Other languages
English (en)
French (fr)
Other versions
WO2009088198A2 (ko
Inventor
권성훈
윤의준
박욱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SNU R&DB Foundation
Original Assignee
SNU R&DB Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SNU R&DB Foundation filed Critical SNU R&DB Foundation
Priority to US12/811,794 priority Critical patent/US8410517B2/en
Publication of WO2009088198A2 publication Critical patent/WO2009088198A2/ko
Publication of WO2009088198A3 publication Critical patent/WO2009088198A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape

Landscapes

  • Led Device Packages (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

본 발명은 발광 다이오드(light emitting diode, 이하 간략히 LED라 함) 코팅 방법에 관한 발명으로서, 보다 구체적으로 LED에 형광체, 몰딩 등을 코팅하는데 사용될 수 있는 LED 코팅 방법에 관한 발명이다. 본 발명 일측면은 (a) 기판, 상기 기판 위에 배열된 복수의 LED를 준비하는 단계; (b) 상기 기판 및 상기 복수의 LED 위에 포토레지스트를 도포하는 단계; 및 (c) 상기 포토레지스트에 선택적으로 광을 노출함으로써, 상기 복수의 LED의 표면에 제1 코팅-상기 제1 코팅은 경화된 상기 포토레지스트임-을 형성하는 단계를 구비하는 LED 코팅 방법을 제공하는 것이다.
PCT/KR2009/000038 2008-01-07 2009-01-06 발광 다이오드 코팅 방법 Ceased WO2009088198A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/811,794 US8410517B2 (en) 2008-01-07 2009-01-06 Light emitting diode coating method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080001861A KR100980115B1 (ko) 2008-01-07 2008-01-07 발광 다이오드 코팅 방법
KR10-2008-0001861 2008-01-07

Publications (2)

Publication Number Publication Date
WO2009088198A2 WO2009088198A2 (ko) 2009-07-16
WO2009088198A3 true WO2009088198A3 (ko) 2009-09-24

Family

ID=40853585

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/000038 Ceased WO2009088198A2 (ko) 2008-01-07 2009-01-06 발광 다이오드 코팅 방법

Country Status (3)

Country Link
US (1) US8410517B2 (ko)
KR (1) KR100980115B1 (ko)
WO (1) WO2009088198A2 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090309114A1 (en) * 2008-01-16 2009-12-17 Luminus Devices, Inc. Wavelength converting light-emitting devices and methods of making the same
WO2011040745A2 (ko) * 2009-09-30 2011-04-07 서울대학교 산학협력단 영상 처리 기반 리소그래피 시스템 및 표적물 코팅 방법
KR101156073B1 (ko) * 2009-09-30 2012-06-20 서울대학교산학협력단 칩 코팅 방법 및 칩 코팅 시스템
AU2010316620B2 (en) 2009-11-05 2016-06-02 Winstone Wallboards Limited Heating panel and method therefor
KR101051328B1 (ko) * 2010-04-23 2011-07-22 우리엘에스티 주식회사 발광다이오드의 코팅 방법
WO2011132805A1 (ko) * 2010-04-23 2011-10-27 우리엘에스티 주식회사 발광다이오드의 코팅 방법
KR101131884B1 (ko) * 2010-07-30 2012-04-03 우리엘에스티 주식회사 발광소자의 코팅 방법
KR101135093B1 (ko) * 2011-02-22 2012-04-16 서울대학교산학협력단 발광 다이오드의 균일 코팅 방법
US20140008685A1 (en) * 2011-03-25 2014-01-09 Koninklijke Philips N.V. Patterned uv sensitive silicone-phosphor layer over leds
KR101837967B1 (ko) 2011-05-30 2018-03-14 삼성전자주식회사 진공 트레이 및 이를 사용한 발광소자 제조방법
KR101795370B1 (ko) 2011-07-28 2017-11-08 삼성전자주식회사 발광디바이스의 제조방법
ITMI20112296A1 (it) * 2011-12-16 2013-06-17 St Microelectronics Srl Dispositivo elettronico flessibile incapsulato e relativo metodo di fabbricazione
KR101288918B1 (ko) 2011-12-26 2013-07-24 루미마이크로 주식회사 파장변환층이 형성된 발광소자 제조방법 및 그에 따라 제조된 발광소자
US8866237B2 (en) 2012-02-27 2014-10-21 Texas Instruments Incorporated Methods for embedding controlled-cavity MEMS package in integration board
CN103311380A (zh) * 2012-03-08 2013-09-18 展晶科技(深圳)有限公司 半导体封装制程及其封装结构
US8669126B2 (en) 2012-03-30 2014-03-11 Snu R&Db Foundation Uniform coating method for light emitting diode
KR20140036670A (ko) * 2012-09-17 2014-03-26 삼성전자주식회사 발광소자 패키지 및 이를 구비한 차량용 헤드라이트
JP2019529935A (ja) 2016-10-05 2019-10-17 エフ ホフマン−ラ ロッシュ アクチェン ゲゼルシャフト 多検体診断用試験エレメントのための検出試薬および電極配置、ならびにそれらを使用する方法
WO2019158648A1 (en) * 2018-02-19 2019-08-22 Signify Holding B.V. Sealed device with light engine
DE102018122572A1 (de) * 2018-09-14 2020-03-19 Osram Opto Semiconductors Gmbh VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER SCHICHT AUS EINEM IN EINEM FLIEßFÄHIGEN ZUSTAND BEREITGESTELLTEN MATERIAL AUF EINER OPTOELEKTRONISCHEN LEUCHTVORRICHTUNG

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040024545A (ko) * 2001-02-21 2004-03-20 인터내셔널 비지네스 머신즈 코포레이션 기판상에 증착된 다중층 구조물에 대한 고분해능포토레지스트 구조화
US6756186B2 (en) * 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
JP2004260171A (ja) * 2003-02-26 2004-09-16 Agilent Technol Inc 薄膜発光層を利用した発光素子からスペクトルシフトした光出力を生成する為の装置及びその製造方法
KR20070053782A (ko) * 2004-09-23 2007-05-25 크리 인코포레이티드 투명성 실리콘 및 형광체를 포함하는 패터닝이 가능한필름을 포함하는 반도체 발광 소자 및 그 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2004A (en) * 1841-03-12 Improvement in the manner of constructing and propelling steam-vessels
TW200414572A (en) * 2002-11-07 2004-08-01 Matsushita Electric Industrial Co Ltd LED lamp
US7847302B2 (en) * 2005-08-26 2010-12-07 Koninklijke Philips Electronics, N.V. Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature
US7939350B2 (en) * 2008-01-03 2011-05-10 E. I. Du Pont De Nemours And Company Method for encapsulating a substrate and method for fabricating a light emitting diode device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040024545A (ko) * 2001-02-21 2004-03-20 인터내셔널 비지네스 머신즈 코포레이션 기판상에 증착된 다중층 구조물에 대한 고분해능포토레지스트 구조화
US6756186B2 (en) * 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
JP2004260171A (ja) * 2003-02-26 2004-09-16 Agilent Technol Inc 薄膜発光層を利用した発光素子からスペクトルシフトした光出力を生成する為の装置及びその製造方法
KR20070053782A (ko) * 2004-09-23 2007-05-25 크리 인코포레이티드 투명성 실리콘 및 형광체를 포함하는 패터닝이 가능한필름을 포함하는 반도체 발광 소자 및 그 제조 방법

Also Published As

Publication number Publication date
US20100276716A1 (en) 2010-11-04
WO2009088198A2 (ko) 2009-07-16
US8410517B2 (en) 2013-04-02
KR20090076101A (ko) 2009-07-13
KR100980115B1 (ko) 2010-09-07

Similar Documents

Publication Publication Date Title
WO2009088198A3 (ko) 발광 다이오드 코팅 방법
WO2008087930A1 (ja) Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ
WO2008030703A3 (en) Coating process
WO2010074734A3 (en) Color correction for wafer level white leds
EP2472610A3 (en) Light emitting diode package and method for manufacturing same
WO2010002221A3 (ko) 파장변환형 발광다이오드 칩 및 이를 구비한 발광장치
WO2010035991A3 (en) Apparatus and method for manufacturing light-emitting diode
EP2537899A4 (en) PHOSPHORUSCULAR HARDENED SILICONE, MANUFACTURING METHOD, PHOSPHORUS-RELATED SILICON COMPOSITION, PRESETER FOR COMPOSITION, STRIP-BASED SHAPES, LED PACKAGE, LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING AN LED-MOUNTED SUBSTRATE
WO2008131877A8 (en) Led module with colour conversion layer designed for a homogenous colour distribution
WO2010022104A3 (en) Organic light emitting diode lighting systems
TW201130166A (en) Reduced color over angle variation LEDs
TW200625692A (en) White-light emitting device and method for manufacturing the same
WO2007023439A3 (en) Color converted light emitting diode
WO2009074127A3 (de) Lichtemittierende vorrichtung
WO2007095173A3 (en) White light emitting devices
WO2009142462A3 (ko) 유기 발광 소자 및 이의 제조방법
WO2008131750A3 (de) Licht emittierendes bauelement und verfahren zum herstellen
WO2006076209A3 (en) System and methods for producing light emitting diode array
EP2458937A4 (en) LIGHT-EMITTING ELEMENT, PROCESS FOR PREPARING THE LIGHT-EMITTING ELEMENT, IMAGE DISPLAY DEVICE AND LIGHTING DEVICE
WO2010089218A3 (de) Leuchtmodul
ATE514198T1 (de) Lichtquelle und verfahren zur erzeugung von licht mit unabhängig voneinander veränderbarer farbe und helligkeit
WO2008060601A3 (en) High efficiency, white, single or multi-color light emitting diodes (leds) by index matching structures
JP2019536278A5 (ko)
WO2010114260A3 (ko) 발광소자 코팅 방법, 광커플러 및 광커플러 제조 방법
TW200625675A (en) White light-emitting equipment with LED, and its application

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09700428

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 12811794

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09700428

Country of ref document: EP

Kind code of ref document: A2