[go: up one dir, main page]

WO2009080471A1 - Dispositif et procédé de soudage pour former des connexions électroconductrices - Google Patents

Dispositif et procédé de soudage pour former des connexions électroconductrices Download PDF

Info

Publication number
WO2009080471A1
WO2009080471A1 PCT/EP2008/066900 EP2008066900W WO2009080471A1 WO 2009080471 A1 WO2009080471 A1 WO 2009080471A1 EP 2008066900 W EP2008066900 W EP 2008066900W WO 2009080471 A1 WO2009080471 A1 WO 2009080471A1
Authority
WO
WIPO (PCT)
Prior art keywords
cutting
cutting device
bonding
conductor
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/066900
Other languages
German (de)
English (en)
Inventor
Hans-Jürgen HESSE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hesse and Knipps GmbH
Original Assignee
Hesse and Knipps GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hesse and Knipps GmbH filed Critical Hesse and Knipps GmbH
Publication of WO2009080471A1 publication Critical patent/WO2009080471A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns

Definitions

  • the present invention initially relates to a bonding device, preferably ultrasonic bonding device, preferably for processing or for bonding power semiconductors, comprising at least one bonding tool, preferably a wedge, for the production of bonds to electrical conductors, such as preferably metallic bands or wires, and comprising a cutting device for partially or completely severing the conductor cross-section.
  • a bonding device preferably ultrasonic bonding device, preferably for processing or for bonding power semiconductors, comprising at least one bonding tool, preferably a wedge, for the production of bonds to electrical conductors, such as preferably metallic bands or wires, and comprising a cutting device for partially or completely severing the conductor cross-section.
  • a common embodiment of the arrangement of the cutting device is its fixed connection to the so-called. Bond head or on the support means, which not only laterally (ie in the direction of X and Y axes) with respect to a working plane spanned by a circuit level, but also to vertical or in the direction of a Z-axis is movable. The cutting can be performed by moving the holder in the cutting direction parallel to the Z-axis.
  • Such a conventional embodiment is known from DE 4016720 Al.
  • the cutting device is firmly connected to a guide unit and an actuator.
  • the actuator can move the cutter a pre-set distance in the cutting direction.
  • the guide unit is firmly connected to the movable in the direction of the Z-axis support means and is initially moved to a predetermined position relative to the cutting position. Then, the actuator (eg, a solenoid) moves the cutter through the clippings.
  • This cutting technique is used in the considerably applied to cylindrical wires up to a diameter of 500 microns. The occurring cutting forces have an amount of a few Newtons.
  • the cross sections of the wires used are sometimes insufficient for the required currents. For this reason, conventionally several wires are bonded in parallel until the required cross section for the required current is reached.
  • the required cutting forces to be generated by the cutting device for scoring or severing the conductor can also increase considerably. This is undesirable in that on the one hand the mechanical influence on the contact point on the already proven level is increased on the one hand. In addition, a more complicated mechanical design of the bonding device is required to produce higher cutting forces.
  • the invention has the object, advantageously further develop a bonding device of the type mentioned, so that in particular reduce the cutting forces required for certain conductor cross sections and can avoid the aforementioned disadvantages as much as possible.
  • the object is achieved according to the invention first and substantially in conjunction with the features that on the cutting device at least one piezoelectric element, preferably at least one piezoceramic is mounted, the excitation by means of electrical alternating voltage, preferably in the ultrasonic frequency range, at least a portion of the Cutting device, preferably at least one cutting edge of the cutting device, vibrated. It has been found that, with such movement oscillations of the cutting device or at least its cutting edge during the penetration into the conductor, the required cutting forces can be reduced compared to a cutting process without vibrations.
  • the invention thus makes possible a simpler mechanical construction, in particular in bonding machines for bonding power semiconductors, and provides a contribution to keeping the mechanical influence on the contact point, when possible, on the level already tested with comparatively smaller conductor cross-sections.
  • a conductor can preferably be processed with the bonding device according to the invention preferably strip material or wire material with virtually any cross-sectional shape, as a material in principle all conventional in bonding materials such as, for example, aluminum, copper, gold, etc., are suitable.
  • Cutting device is to be understood in a general sense and includes all commonly used in bonding devices for severing conductors Schneid positioning. Separating devices, such as. Knife or the like.
  • it can be a cutting device with a cross-sectioned cutting edge.
  • the cutting device may consist of a Knife holder and consist of a knife, which can be separated from each other, so that a simple blade change can be made.
  • the piezoelectric actuator is on the Messerhalterungs- side.
  • the piezoelement mentioned is preferably a piezoceramic actuator, which may have one or more layers as needed.
  • the piezoelectric element may, for example, be glued, soldered or otherwise fastened for transmitting vibration to the cutting device.
  • the type of attachment is chosen so that changes in geometry, in particular changes in length or thickness, which occur on the piezoelectric actuator when an alternating voltage is applied, lead to vibrations on the cutting device.
  • a time-varying electrical voltage is applied to the piezoelectric element, this causes a time-dependent change in the layer thickness there, with the upsetting or stretching due to the connection (for example, by a two-dimensional glued connection) depending on the embodiment wholly or partly to the contact zone of the cutting device be transferred and this is due to the compressions or strains occurring there is at least partially excited to vibrate.
  • the basic idea is therefore that by means of an actuator at least a portion of the cutting device, which comes in contact with the conductor during the separation process, is excited during the complete or partial separation process to mechanical vibrations.
  • the piezoelectric element is oriented or aligned on the cutting device such that it excites at least the cutting region of the cutting device in its cutting direction when excited by means of alternating voltage.
  • cutting direction refers in particular to the feed direction of the cutting movement. This may preferably (but this is not necessary) perpendicular to a plane defined by the gebon- Deten circuit plane. Alternatively, there is the possibility that the cutting direction may also be inclined or even conceivable perpendicular to this with respect to the working plane vertical direction (ie, parallel to the working plane).
  • the piezoelectric element is connected to a voltage source which is suitable or adapted for generating an electrical alternating voltage in the ultrasonic frequency range.
  • the bonding tool is also connected to a transducer, which on a voltage source is connected, which is suitable or adapted for generating an electrical alternating voltage in the ultrasonic frequency range, so that an ultrasonic bonding device is provided.
  • a transducer which on a voltage source is connected, which is suitable or adapted for generating an electrical alternating voltage in the ultrasonic frequency range, so that an ultrasonic bonding device is provided.
  • the bonding device has a movable mounting device for holding the bonding tool and the cutting device, which is movable relative to a working plane laterally and in the vertical direction of travel.
  • the mounting device can serve for the movable mounting of a module referred to as a bonding head or can itself be understood as a bonding head, which in an expedient development also includes a wire or tape guide for feeding the conductor from one Stock (eg. Storage Winding) may have to bond point.
  • the said working plane is usually spanned by the plane of extension of the circuits to be bonded or by a corresponding, usually horizontal support surface of the bonding device.
  • the cutting direction of the cutting device and the vertical direction of travel of the holding device are parallel.
  • the holding device or of the bonding head.
  • Cutting device at least in the cutting direction rigidly connected to the support device.
  • the cutting device is at least in the cutting direction kraftnachgiebig, preferably under a spring tension, connected to the mounting device.
  • the spring may preferably be a spring with small ger spring constant, ie act with a flat spring characteristic, so that small differences in deformation only lead to negligible force differences.
  • an actuator which in particular has a solenoid see solenoid, is connected, which is connected to Hubausübung or power transmission movable element fixed to the cutting device.
  • the invention also relates to a method for producing electrically conductive connections between connection partners, such as preferably spaced Heidelbergungs Siemensen and / or components or the like (ie practically between any components or their areas), by attachment of preferably bandförmigem or wire-shaped electrical conductor respectively to each other electrically conductive to be connected connecting partners by bonding, in particular ultrasonic bonding, in particular using power semiconductors, wherein after producing a desired number of bonds for separating a longitudinal section of the conductor, the cross section of the conductor is partially or completely severed by means of a cutting device.
  • Such electrically conductive connections are known to be sections of an electrical conductor (usually strip or wire material) of selected length as required, which are electrically conductive by a desired number of local bonding connections with the relevant circuit areas, components, etc. be connected, so that in these compounds so far to speak of connection sections.
  • the object of the invention is to advantageously continue such a method. zusenten, so that in particular the above-mentioned, possible in the prior art disadvantages are avoided as much as possible.
  • the invention initially and essentially proposes that the cutting device, while the conductor cross-section is completely or partially broken, at least in a portion of the cutting device, preferably at least at the cutting edge, is vibrated.
  • Cutting device when penetrating into the conductor cross-section can reduce the required cutting forces by up to 70 percent compared to a cutting process without vibration excitation.
  • the bond connections can preferably be produced by means of ultrasound bonding.
  • the cutting is preferably carried out after the production of a so-called loop of the conductor as a connecting section, ie after the completion of at least two bond connections on a conductor section.
  • By cutting while the remaining, formed substantially of the remaining length of the remaining length of the conductor of the bonding device length portion can be separated, whereby at the same time a new free conductor end for producing a subsequent loop is formed on the conductor stock.
  • wire or strip material can be used with virtually any cross-sectional shape, which can be used on all common conductor materials.
  • wires with a diameter of more than 500 ⁇ m can be used.
  • metallic strip material whose cross-section has a thickness of more than 300 microns and / or a width of more than 2000 microns.
  • a fiction, contemporary bonding device is used which has one or more of the features described above. The method is preferably carried out in such a way that an oscillating electrical voltage is applied to the vibration excitation of the cutting device to a piezoelectric element mounted thereon, wherein the cutting device is preferably excited to oscillate in the ultrasonic frequency range. As already mentioned, it is preferred that the cutting device is excited to oscillate in its cutting direction.
  • a cutting device which is fixedly or rigidly connected to the holding device in the cutting direction is used, that for at least partially severing the conductor cross section, the holding device in the direction of the conductor, preferably by means of a downward vertical movement of the bonding head is moved until the cutting device touches down on the head, that the cutting device at least then excited in the cutting direction to ultrasonic vibrations and the support device is moved further during the vibration excitation until the cutting device has at least partially severed the conductor cross-section.
  • the cutting force acting on the substrate (substrate, chip or the like) in this variant is limited by the bending stiffness or buckling rigidity of the cutting device and can assume very large values depending on the speed of the movement in the Z-axis direction during cutting.
  • a cutting device which is force-displaceable in its cutting direction, preferably under a spring bias, is used with the holding device such that for at least partially severing the conductor cross-section the holding device is moved in the direction of the conductor (preferably by means of a downward movement) , ie in the direction of the Z-axis, leading vertical movement of the bonding head) until the cutting device touches the conductor and is preferably biased against the conductor by a force dependent on the yielding force, causing the cutting device to vibrate ultrasonically at least thereafter in the preferred cutting direction and continue to move the mounting device until the cutting device releases the cutting device Conductor cross section has at least partially severed.
  • the cutting device can be moved relative to the mounting device or to the bonding head in the direction of the Z-axis.
  • the cutting device When depositing on the ladder, the cutting device can be held by the spring with a defined force in its rest position.
  • the cutting feed can also be generated here by a movement of the holding device in the direction of the Z-axis, but it is ensured by the force-yielding recording, that the force acting on the bonding force does not exceed a predetermined maximum value, namely that of the prestressed spring.
  • the spring or its characteristic curve can be selected, for example, such that the cutting device force (eg knife force) which can be generated thereby with resilient support of the cutting device is sufficient for cutting only in conjunction with the oscillation excitation of the cutting device.
  • the cutting device force eg knife force
  • a cutting device which is actively movable in its cutting direction by means of an actuator connected to the holding device in the cutting direction relative to the holding device, that for at least partially severing the conductor cross-section, the holding device in the direction of the Ladder, preferably in a down in the direction of the Z-axis movement of the bonding head, is moved to a predetermined position, that the cutting device at least thereafter to ultrasonic vibrations, in particular in the cutting direction, stimulated and by means of the actuator while a lifting movement of the cutting device is caused by which the cutting device at least partially cuts through the conductor cross-section.
  • the cutting device can be moved relative to the mounting device parallel to the Z axis.
  • the guide carrying the cutting device is equipped with an actuator which can move the cutting device about a fixed stroke.
  • the cutting device can be excited in the cutting direction to ultrasonic vibrations and then the actuator are turned on, which in turn can move the cutter by a fixed value in the cutting direction.
  • the maximum achievable cutting force is given, here by the maximum force of the actuator.
  • the complete separation of the remaining conductor stock from the last bond can be done by some subsequent movements with the bondhead. Since the conductor is fed through the bondhead, these movements can exert an increased tensile stress on the separation point and the unneeded length of stored material is finally torn off. There is also the possibility that the piezoelectric element is excited to oscillate only during a certain subinterval of cutting.
  • FIG. 1 shows a schematically simplified side view of a detail of a bonding device according to the invention according to a first preferred embodiment in an operating state
  • FIG. 2 shows the bonding device according to FIG. 1 in a subsequent operating state
  • FIG. 2a shows an enlarged detail of detail IIa in FIG. 2;
  • FIG. 3 shows the bonding device in a subsequent operating state with respect to FIG. 2;
  • FIG. 3a shows an enlarged detail of detail IHa in FIG. 3;
  • FIG. 4 shows a schematic side view of a detail of a bonding device according to the invention in accordance with a second preferred embodiment
  • FIG. 5 shows the bonding device according to FIG. 4 in a subsequent operating state
  • FIG. FIG. 5a shows an enlarged detail of detail Va in FIG. 5
  • FIG. 5a shows an enlarged detail of detail Va in FIG. 5
  • FIG. 6 shows the bonding device in a subsequent operating state with respect to FIG. 5;
  • FIG. 6a shows an enlarged detail of detail VIa in FIG. 6;

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

La présente invention concerne un dispositif de soudage qui présente au moins un outil de soudage et un système de découpe qui découpe partiellement ou complètement la section transversale du conducteur, et propose comme développement avantageux de monter sur le système de découpe (9) au moins un élément piézoélectrique (17) qui, lorsqu'il est excité au moyen d'une tension électrique alternative, de préférence dans la plage de fréquences des ultrasons, met en oscillation au moins une partie du système de découpe (9) et de préférence au moins une lame (10) du système de découpe (9). L'invention concerne en outre un procédé de formation de connexions électriquement conductrices entre des partenaires de connexion, par fixation d'un conducteur électrique sur les partenaires de connexion à relier l'un à l'autre de manière électriquement conductrice, par des connexions collées, de préférence des connexions soudées par ultrasons, la section transversale du conducteur étant découpée partiellement ou totalement au moyen d'un système de découpe après formation d'un nombre souhaité de connexions soudées, pour découper un segment du conducteur en longueur. L'invention propose comme développement avantageux que pendant que la section transversale du conducteur est découpée totalement ou partiellement, le système de découpe (9) soit mis en oscillation au moins au niveau d'une partie (20) du système de découpe (9) et de préférence au moins au niveau de sa lame (10).
PCT/EP2008/066900 2007-12-21 2008-12-05 Dispositif et procédé de soudage pour former des connexions électroconductrices Ceased WO2009080471A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007063588A DE102007063588A1 (de) 2007-12-21 2007-12-21 Bondvorrichtung und Verfahren zur Herstellung elektrisch leitfähiger Verbindungen
DE102007063588.7 2007-12-21

Publications (1)

Publication Number Publication Date
WO2009080471A1 true WO2009080471A1 (fr) 2009-07-02

Family

ID=40474820

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/066900 Ceased WO2009080471A1 (fr) 2007-12-21 2008-12-05 Dispositif et procédé de soudage pour former des connexions électroconductrices

Country Status (2)

Country Link
DE (1) DE102007063588A1 (fr)
WO (1) WO2009080471A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019128634B3 (de) * 2019-10-23 2021-02-11 F&K Delvotec Bondtechnik Gmbh Laserbonden mit mehrlagigen Bändchen
CN114388407B (zh) * 2021-12-24 2023-02-17 凌波微步半导体设备(常熟)有限公司 一种键合头装置及键合机

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6439448B1 (en) * 1999-11-05 2002-08-27 Orthodyne Electronics Corporation Large wire bonder head
EP1352701A1 (fr) * 2002-04-12 2003-10-15 F & K Delvotek Bondtechnik Dispositif de coupe pour une unité de connexion de fils
EP1625911A1 (fr) * 2004-08-11 2006-02-15 F&K Delvotec Bondtechnik GmbH Appareil de microcablage avec une caméra, un dispositif de traitement d'images, des mémoires et des moyens de comparaison et méthode pour faire fonctionner un tel appareil
WO2008046397A1 (fr) * 2006-10-20 2008-04-24 Hesse & Knipps Gmbh Dispositif de soudage par ultrasons

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4976392A (en) 1989-08-11 1990-12-11 Orthodyne Electronics Corporation Ultrasonic wire bonder wire formation and cutter system
US20040217488A1 (en) 2003-05-02 2004-11-04 Luechinger Christoph B. Ribbon bonding

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6439448B1 (en) * 1999-11-05 2002-08-27 Orthodyne Electronics Corporation Large wire bonder head
EP1352701A1 (fr) * 2002-04-12 2003-10-15 F & K Delvotek Bondtechnik Dispositif de coupe pour une unité de connexion de fils
EP1625911A1 (fr) * 2004-08-11 2006-02-15 F&K Delvotec Bondtechnik GmbH Appareil de microcablage avec une caméra, un dispositif de traitement d'images, des mémoires et des moyens de comparaison et méthode pour faire fonctionner un tel appareil
WO2008046397A1 (fr) * 2006-10-20 2008-04-24 Hesse & Knipps Gmbh Dispositif de soudage par ultrasons

Also Published As

Publication number Publication date
DE102007063588A1 (de) 2009-06-25

Similar Documents

Publication Publication Date Title
DE102017220758B4 (de) Sic-wafer herstellungsverfahren
DE4016720B4 (de) Verfahren und Vorrichtung zum Ultraschallbonden
DE3343738A1 (de) Verfahren und vorrichtung zum anheften eines duennen elektrisch leitenden drahtes,insbesondere aluminiumdrahtes, an elektrische kontaktstellen bzw. -flaechen (bonden) von elektrischen oder elektronischen bauteilen, insbesondere halbleiter-bauelementen
DE102004024643B4 (de) Werkstückteilungsverfahren unter Verwendung eines Laserstrahls
DE69800550T2 (de) Ritzwerkzeug
DE112016007605B4 (de) Haltestruktur eines Ultraschallschwingung-Übertragungsmechanismus
DE10207498B4 (de) Bondkopf für dicken Draht
DE102009027021B3 (de) Ultraschall-Schweißvorrichtung und Verfahren zum Verschweißen zweier Bauteile
CH700015B1 (de) Ultraschall Transducer.
EP1352701B1 (fr) Dispositif de coupe pour une unité de connexion de fils
DE102019212840A1 (de) SiC-SUBSTRATBEARBEITUNGSVERFAHREN
DE60200792T2 (de) Kapillare mit gesteuerter dämpfung
DE19541864A1 (de) Ultraschall-Schweißvorrichtung
EP0649701B1 (fr) Dispositif et procédé de connexion par fil
WO2002061895A1 (fr) Procede et dispositif servant a connecter des conducteurs
DE102013110356B4 (de) Ultraschallaktor
WO2009080471A1 (fr) Dispositif et procédé de soudage pour former des connexions électroconductrices
WO2017092730A1 (fr) Procédé de fonctionnement d'un dispositif de soudage par ultrasons à amortissement actif et passif des vibrations
DE102019128634B3 (de) Laserbonden mit mehrlagigen Bändchen
EP3592498B1 (fr) Dispositif de soudage par ultrasons et procédé de soudage par ultrasons
DE10249569B4 (de) Werkzeugkopf zum Befestigen eines elektrischen Leiters auf der Kontaktfläche eines Substrates und Verfahren zum Durchführen der Befestigung
DE10114672A1 (de) Ultraschallschwinger
DE4207165A1 (de) Verfahren zum stanzen einer metallfolie auf einer mit piezoelektrischen betaetigern betriebenen presse und stanzwerkzeugsaetze fuer die ausfuehrung des verfahrens
DE69311347T2 (de) Einrichtung für die elektrische Verbindung von integrierten Schaltungen
EP0186176A2 (fr) Machine pour fixer les fils de connexion sur les points de raccordement d'un élément semi-conducteur et de son boîtier

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08864139

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08864139

Country of ref document: EP

Kind code of ref document: A1