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WO2009078330A1 - Zinc oxide sintered compact, process for producing the zinc oxide sintered compact, sputtering target, and electrode formed using the sputtering target - Google Patents

Zinc oxide sintered compact, process for producing the zinc oxide sintered compact, sputtering target, and electrode formed using the sputtering target Download PDF

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Publication number
WO2009078330A1
WO2009078330A1 PCT/JP2008/072498 JP2008072498W WO2009078330A1 WO 2009078330 A1 WO2009078330 A1 WO 2009078330A1 JP 2008072498 W JP2008072498 W JP 2008072498W WO 2009078330 A1 WO2009078330 A1 WO 2009078330A1
Authority
WO
WIPO (PCT)
Prior art keywords
zinc oxide
sintered compact
oxide sintered
sputtering target
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/072498
Other languages
French (fr)
Japanese (ja)
Inventor
Hideko Fukushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP2009546232A priority Critical patent/JP5682112B2/en
Publication of WO2009078330A1 publication Critical patent/WO2009078330A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Disclosed is a sputtering target that does not cause abnormal discharge in sputtering and can form a transparent electrode having a low specific resistance and a high plasma resistance. Also disclosed is a process for producing a zinc oxide sintered compact containing a first additive element (one or more elements selected from Al, Ga, In, Ti, Si, Ge, and Sn) to zinc oxide (ZnO) and V particularly as a second additive element for enhancing the resistance of the electrode to plasma. According to the production process, a calcined powder including a ZnAl2O4 phase and a Zn3(VO4)2 phase is first produced. The calcined powder and a ZnO powder are mixed together, and the mixture is molded and fired to produce a zinc oxide sintered compact.
PCT/JP2008/072498 2007-12-19 2008-12-11 Zinc oxide sintered compact, process for producing the zinc oxide sintered compact, sputtering target, and electrode formed using the sputtering target Ceased WO2009078330A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009546232A JP5682112B2 (en) 2007-12-19 2008-12-11 Zinc oxide sintered body and manufacturing method thereof, sputtering target, and electrode formed using this sputtering target

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-326946 2007-12-19
JP2007326946 2007-12-19

Publications (1)

Publication Number Publication Date
WO2009078330A1 true WO2009078330A1 (en) 2009-06-25

Family

ID=40795446

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072498 Ceased WO2009078330A1 (en) 2007-12-19 2008-12-11 Zinc oxide sintered compact, process for producing the zinc oxide sintered compact, sputtering target, and electrode formed using the sputtering target

Country Status (2)

Country Link
JP (1) JP5682112B2 (en)
WO (1) WO2009078330A1 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012108157A1 (en) * 2011-02-10 2012-08-16 三菱マテリアル株式会社 Sputtering target for forming transparent film for solar cells, and process for production thereof
WO2012114713A1 (en) * 2011-02-25 2012-08-30 三菱マテリアル株式会社 Transparent oxide film and process for producing same
CN103140454A (en) * 2010-09-29 2013-06-05 东曹株式会社 Sintered composite oxide, manufacturing method therefor, sputtering target, transparent conductive oxide film, and manufacturing method therefor
JP2013544432A (en) * 2010-09-13 2013-12-12 サンパワー コーポレイション Manufacture of solar cells with silicon nanoparticles
JP2014500403A (en) * 2010-12-24 2014-01-09 オーシャンズ キング ライティング サイエンスアンドテクノロジー カンパニー リミテッド Conductive film, preparation method and application thereof
WO2014083909A1 (en) * 2012-11-30 2014-06-05 日本碍子株式会社 Method for manufacturing zinc oxide-based sputtering target
KR101412319B1 (en) * 2009-07-21 2014-06-26 히타치 긴조쿠 가부시키가이샤 TARGET FOR ZnO-BASED TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING SAME
WO2014122120A1 (en) * 2013-02-05 2014-08-14 Soleras Advanced Coatings Bvba (ga) zn sn oxide sputtering target
JP2015044740A (en) * 2014-11-07 2015-03-12 Jx日鉱日石金属株式会社 Gallium oxide powder and production method thereof, oxide sintered sputtering target and production method thereof
JP5688179B1 (en) * 2014-09-10 2015-03-25 Jx日鉱日石金属株式会社 Oxide sintered body, sputtering target, thin film, and method for producing oxide sintered body
JP2017098479A (en) * 2015-11-27 2017-06-01 学校法人金沢工業大学 Photoelectric conversion element, tandem photoelectric conversion element, and photochargeable battery device
US10376580B2 (en) 2012-10-01 2019-08-13 Mayo Foundation For Medical Education And Research Methods of treating cancer with antibody-albumin nanoparticle complexes comprising albumin, trastuzumab, and paclitaxel
US10624846B2 (en) 2014-10-06 2020-04-21 Mayo Foundation For Medical Education And Research Lyophilized compositions comprising albumin-antibody paclitaxel nanoparticle complexes
CN113149633A (en) * 2021-04-08 2021-07-23 郑州大学 Preparation method of secondary phase controllable zinc-aluminum oxide sputtering target material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0350148A (en) * 1989-07-19 1991-03-04 Tosoh Corp Zinc oxide sintered compact, production and its application
JPH06128743A (en) * 1992-09-04 1994-05-10 Mitsubishi Materials Corp Transparent electrically conductive film, production and target used therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823342B2 (en) * 1977-04-20 1983-05-14 株式会社村田製作所 Zinc oxide porcelain for high frequency sputtering

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0350148A (en) * 1989-07-19 1991-03-04 Tosoh Corp Zinc oxide sintered compact, production and its application
JPH06128743A (en) * 1992-09-04 1994-05-10 Mitsubishi Materials Corp Transparent electrically conductive film, production and target used therefor

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101412319B1 (en) * 2009-07-21 2014-06-26 히타치 긴조쿠 가부시키가이샤 TARGET FOR ZnO-BASED TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING SAME
JP2013544432A (en) * 2010-09-13 2013-12-12 サンパワー コーポレイション Manufacture of solar cells with silicon nanoparticles
US9111663B2 (en) 2010-09-29 2015-08-18 Tosoh Corporation Sintered composite oxide, manufacturing method therefor, sputtering target, transparent conductive oxide film, and manufacturing method therefor
CN103140454A (en) * 2010-09-29 2013-06-05 东曹株式会社 Sintered composite oxide, manufacturing method therefor, sputtering target, transparent conductive oxide film, and manufacturing method therefor
JP2014500403A (en) * 2010-12-24 2014-01-09 オーシャンズ キング ライティング サイエンスアンドテクノロジー カンパニー リミテッド Conductive film, preparation method and application thereof
TWI556465B (en) * 2011-02-10 2016-11-01 Mitsubishi Materials Corp A sputtering target for forming a transparent film for a solar cell and a method for manufacturing the same
WO2012108157A1 (en) * 2011-02-10 2012-08-16 三菱マテリアル株式会社 Sputtering target for forming transparent film for solar cells, and process for production thereof
CN106187154A (en) * 2011-02-10 2016-12-07 三菱综合材料株式会社 For forming sputtering target and the manufacture method thereof of hyaline membrane used for solar batteries
CN103270191A (en) * 2011-02-10 2013-08-28 三菱综合材料株式会社 Sputtering target for forming transparent film for solar cell and manufacturing method thereof
JP2015163741A (en) * 2011-02-10 2015-09-10 三菱マテリアル株式会社 Sputtering target for forming transparent film and method for producing the same
JP5747922B2 (en) * 2011-02-10 2015-07-15 三菱マテリアル株式会社 Sputtering target for forming transparent film for solar cell and method for producing the same
JP2013189657A (en) * 2011-02-25 2013-09-26 Mitsubishi Materials Corp Transparent oxide film and method of producing the same
WO2012114713A1 (en) * 2011-02-25 2012-08-30 三菱マテリアル株式会社 Transparent oxide film and process for producing same
US10376580B2 (en) 2012-10-01 2019-08-13 Mayo Foundation For Medical Education And Research Methods of treating cancer with antibody-albumin nanoparticle complexes comprising albumin, trastuzumab, and paclitaxel
WO2014083909A1 (en) * 2012-11-30 2014-06-05 日本碍子株式会社 Method for manufacturing zinc oxide-based sputtering target
JPWO2014083909A1 (en) * 2012-11-30 2017-01-05 日本碍子株式会社 Method for producing zinc oxide based sputtering target
WO2014122120A1 (en) * 2013-02-05 2014-08-14 Soleras Advanced Coatings Bvba (ga) zn sn oxide sputtering target
US9758856B2 (en) 2013-02-05 2017-09-12 Soleras Advanced Coatings Bvba (Ga) Zn Sn oxide sputtering target
JP5688179B1 (en) * 2014-09-10 2015-03-25 Jx日鉱日石金属株式会社 Oxide sintered body, sputtering target, thin film, and method for producing oxide sintered body
US10624846B2 (en) 2014-10-06 2020-04-21 Mayo Foundation For Medical Education And Research Lyophilized compositions comprising albumin-antibody paclitaxel nanoparticle complexes
JP2015044740A (en) * 2014-11-07 2015-03-12 Jx日鉱日石金属株式会社 Gallium oxide powder and production method thereof, oxide sintered sputtering target and production method thereof
JP2017098479A (en) * 2015-11-27 2017-06-01 学校法人金沢工業大学 Photoelectric conversion element, tandem photoelectric conversion element, and photochargeable battery device
CN113149633A (en) * 2021-04-08 2021-07-23 郑州大学 Preparation method of secondary phase controllable zinc-aluminum oxide sputtering target material

Also Published As

Publication number Publication date
JPWO2009078330A1 (en) 2011-04-28
JP5682112B2 (en) 2015-03-11

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